JP2008500735A5 - - Google Patents
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- Publication number
- JP2008500735A5 JP2008500735A5 JP2007515262A JP2007515262A JP2008500735A5 JP 2008500735 A5 JP2008500735 A5 JP 2008500735A5 JP 2007515262 A JP2007515262 A JP 2007515262A JP 2007515262 A JP2007515262 A JP 2007515262A JP 2008500735 A5 JP2008500735 A5 JP 2008500735A5
- Authority
- JP
- Japan
- Prior art keywords
- drain
- transistor
- nanotube
- source region
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002071 nanotube Substances 0.000 claims 20
- 238000000034 method Methods 0.000 claims 14
- 150000001875 compounds Chemical class 0.000 claims 8
- 239000002019 doping agent Substances 0.000 claims 8
- 229910052751 metal Inorganic materials 0.000 claims 6
- 239000002184 metal Substances 0.000 claims 6
- 239000004065 semiconductor Substances 0.000 claims 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims 4
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims 4
- 239000000460 chlorine Substances 0.000 claims 4
- 229910001092 metal group alloy Inorganic materials 0.000 claims 4
- 239000011734 sodium Substances 0.000 claims 4
- 230000005669 field effect Effects 0.000 claims 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 2
- 229920002873 Polyethylenimine Polymers 0.000 claims 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 2
- 229910052794 bromium Inorganic materials 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 239000002800 charge carrier Substances 0.000 claims 2
- 229910052801 chlorine Inorganic materials 0.000 claims 2
- 238000005137 deposition process Methods 0.000 claims 2
- 229910052700 potassium Inorganic materials 0.000 claims 2
- 239000011591 potassium Substances 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 229910052708 sodium Inorganic materials 0.000 claims 2
- 230000005641 tunneling Effects 0.000 claims 2
- 238000001771 vacuum deposition Methods 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/852,891 US7180107B2 (en) | 2004-05-25 | 2004-05-25 | Method of fabricating a tunneling nanotube field effect transistor |
| US10/852,891 | 2004-05-25 | ||
| PCT/US2005/018201 WO2006073477A2 (en) | 2004-05-25 | 2005-05-24 | Method of fabricating a tunneling nanotube field effect transistor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008500735A JP2008500735A (ja) | 2008-01-10 |
| JP2008500735A5 true JP2008500735A5 (enExample) | 2008-05-22 |
| JP5263755B2 JP5263755B2 (ja) | 2013-08-14 |
Family
ID=35459605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007515262A Expired - Fee Related JP5263755B2 (ja) | 2004-05-25 | 2005-05-24 | トンネル・ナノチューブ電界効果トランジスタおよびそれを製作する方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7180107B2 (enExample) |
| EP (1) | EP1754262B1 (enExample) |
| JP (1) | JP5263755B2 (enExample) |
| CN (1) | CN101065811B (enExample) |
| TW (1) | TWI339852B (enExample) |
| WO (1) | WO2006073477A2 (enExample) |
Families Citing this family (55)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0415891D0 (en) * | 2004-07-16 | 2004-08-18 | Koninkl Philips Electronics Nv | Nanoscale fet |
| KR101025846B1 (ko) * | 2004-09-13 | 2011-03-30 | 삼성전자주식회사 | 탄소나노튜브 채널을 포함하는 반도체 장치의 트랜지스터 |
| WO2006077585A2 (en) * | 2005-01-18 | 2006-07-27 | Shye Shapira | Apparatus and method for control of tunneling in a small-scale electronic structure |
| KR100682925B1 (ko) * | 2005-01-26 | 2007-02-15 | 삼성전자주식회사 | 멀티비트 비휘발성 메모리 소자 및 그 동작 방법 |
| DE102005046427B4 (de) * | 2005-09-28 | 2010-09-23 | Infineon Technologies Ag | Leistungstransistor mit parallelgeschalteten Nanodrähten |
| US7492015B2 (en) * | 2005-11-10 | 2009-02-17 | International Business Machines Corporation | Complementary carbon nanotube triple gate technology |
| ATE529894T1 (de) * | 2006-01-25 | 2011-11-15 | Nxp Bv | Nanodraht-tunneltransistor |
| WO2007099642A1 (ja) * | 2006-03-03 | 2007-09-07 | Fujitsu Limited | カーボンナノチューブを用いた電界効果トランジスタとその製造方法及びセンサ |
| CN100435351C (zh) * | 2006-04-28 | 2008-11-19 | 北京芯技佳易微电子科技有限公司 | 利用偶极效应调制纳米级场效应晶体管的输运特性的方法 |
| EP1900681B1 (en) | 2006-09-15 | 2017-03-15 | Imec | Tunnel Field-Effect Transistors based on silicon nanowires |
| JP5171161B2 (ja) * | 2006-09-15 | 2013-03-27 | アイメック | ナノワイヤトンネル電界効果トランジスタ半導体装置およびその製造方法 |
| US7893476B2 (en) * | 2006-09-15 | 2011-02-22 | Imec | Tunnel effect transistors based on silicon nanowires |
| EP1901355B1 (en) * | 2006-09-15 | 2015-11-11 | Imec | Tunnel effect transistors based on monocrystalline nanowires having a heterostructure |
| EP1901354B1 (en) | 2006-09-15 | 2016-08-24 | Imec | A tunnel field-effect transistor with gated tunnel barrier |
| US8120115B2 (en) * | 2007-03-12 | 2012-02-21 | Imec | Tunnel field-effect transistor with gated tunnel barrier |
| WO2008157509A2 (en) * | 2007-06-14 | 2008-12-24 | University Of Florida Research Foundation, Inc. | Room temperature carbon nanotubes integrated on cmos |
| US8378333B2 (en) * | 2007-09-27 | 2013-02-19 | University Of Maryland | Lateral two-terminal nanotube devices and method for their formation |
| US8043978B2 (en) * | 2007-10-11 | 2011-10-25 | Riken | Electronic device and method for producing electronic device |
| EP2161755A1 (en) * | 2008-09-05 | 2010-03-10 | University College Cork-National University of Ireland, Cork | Junctionless Metal-Oxide-Semiconductor Transistor |
| US10032569B2 (en) * | 2009-08-26 | 2018-07-24 | University Of Maryland, College Park | Nanodevice arrays for electrical energy storage, capture and management and method for their formation |
| US8912522B2 (en) * | 2009-08-26 | 2014-12-16 | University Of Maryland | Nanodevice arrays for electrical energy storage, capture and management and method for their formation |
| US8288803B2 (en) * | 2009-08-31 | 2012-10-16 | International Business Machines Corporation | Tunnel field effect devices |
| US8698254B2 (en) | 2009-09-30 | 2014-04-15 | National University Corporation Hokkaido University | Tunnel field effect transistor and method for manufacturing same |
| US8384065B2 (en) * | 2009-12-04 | 2013-02-26 | International Business Machines Corporation | Gate-all-around nanowire field effect transistors |
| US8097515B2 (en) * | 2009-12-04 | 2012-01-17 | International Business Machines Corporation | Self-aligned contacts for nanowire field effect transistors |
| US8129247B2 (en) | 2009-12-04 | 2012-03-06 | International Business Machines Corporation | Omega shaped nanowire field effect transistors |
| US8173993B2 (en) * | 2009-12-04 | 2012-05-08 | International Business Machines Corporation | Gate-all-around nanowire tunnel field effect transistors |
| US8455334B2 (en) | 2009-12-04 | 2013-06-04 | International Business Machines Corporation | Planar and nanowire field effect transistors |
| US8143113B2 (en) | 2009-12-04 | 2012-03-27 | International Business Machines Corporation | Omega shaped nanowire tunnel field effect transistors fabrication |
| US20120248417A1 (en) * | 2009-12-21 | 2012-10-04 | Imec | Double gate nanostructure fet |
| US8722492B2 (en) | 2010-01-08 | 2014-05-13 | International Business Machines Corporation | Nanowire pin tunnel field effect devices |
| CN101777499B (zh) * | 2010-01-22 | 2011-08-24 | 北京大学 | 一种基于平面工艺自对准制备隧穿场效应晶体管的方法 |
| US8324940B2 (en) | 2010-04-13 | 2012-12-04 | International Business Machines Corporation | Nanowire circuits in matched devices |
| US8361907B2 (en) | 2010-05-10 | 2013-01-29 | International Business Machines Corporation | Directionally etched nanowire field effect transistors |
| US8324030B2 (en) | 2010-05-12 | 2012-12-04 | International Business Machines Corporation | Nanowire tunnel field effect transistors |
| US8445320B2 (en) * | 2010-05-20 | 2013-05-21 | International Business Machines Corporation | Graphene channel-based devices and methods for fabrication thereof |
| US8835231B2 (en) | 2010-08-16 | 2014-09-16 | International Business Machines Corporation | Methods of forming contacts for nanowire field effect transistors |
| US8536563B2 (en) | 2010-09-17 | 2013-09-17 | International Business Machines Corporation | Nanowire field effect transistors |
| KR101733050B1 (ko) * | 2010-11-22 | 2017-05-08 | 삼성전자주식회사 | 3개의 단자를 갖는 공진기 및 그 제조 방법 |
| CN102683209B (zh) * | 2011-03-18 | 2015-01-21 | 中国科学院微电子研究所 | 一种半导体器件及其制造方法 |
| CN103094347B (zh) * | 2013-01-11 | 2015-09-02 | 南京邮电大学 | 一种双材料欠叠异质栅结构的碳纳米管场效应管 |
| CN103247688B (zh) * | 2013-04-22 | 2016-08-17 | 南京邮电大学 | 一种双材料栅线性掺杂的石墨烯场效应管 |
| US8975123B2 (en) | 2013-07-09 | 2015-03-10 | International Business Machines Corporation | Tunnel field-effect transistors with a gate-swing broken-gap heterostructure |
| US9203041B2 (en) * | 2014-01-31 | 2015-12-01 | International Business Machines Corporation | Carbon nanotube transistor having extended contacts |
| CN105097904B (zh) | 2014-05-05 | 2019-01-25 | 中芯国际集成电路制造(上海)有限公司 | 隧穿碳纳米管场效应晶体管及其制造方法 |
| CN105097913B (zh) * | 2014-05-05 | 2018-12-04 | 中芯国际集成电路制造(上海)有限公司 | 场效应晶体管及其制造方法 |
| KR102154185B1 (ko) | 2014-09-19 | 2020-09-09 | 삼성전자 주식회사 | 반도체 소자 |
| CN105990147B (zh) * | 2015-02-27 | 2019-01-22 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制作方法和电子装置 |
| CN106601738B (zh) * | 2015-10-15 | 2018-08-24 | 上海新昇半导体科技有限公司 | 互补场效应晶体管及其制备方法 |
| JP6730598B2 (ja) * | 2016-07-19 | 2020-07-29 | 富士通株式会社 | 半導体装置 |
| US10170702B2 (en) | 2017-01-12 | 2019-01-01 | International Business Machines Corporation | Intermetallic contact for carbon nanotube FETs |
| JP6773615B2 (ja) * | 2017-08-21 | 2020-10-21 | 日本電信電話株式会社 | ナノワイヤトランジスタの製造方法 |
| US10818785B2 (en) * | 2017-12-04 | 2020-10-27 | Ecole Polytechnique Federale De Lausanne (Epfl) | Sensing device for sensing minor charge variations |
| CN108598170B (zh) | 2018-05-24 | 2022-07-08 | 厦门半导体工业技术研发有限公司 | 纳米线晶体管及其制作方法 |
| US11165032B2 (en) * | 2019-09-05 | 2021-11-02 | Taiwan Semiconductor Manufacturing Co., Ltd. | Field effect transistor using carbon nanotubes |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US130333A (en) * | 1872-08-06 | Improvement in machines for glazing and polishing saw-blades | ||
| JPS5754370A (en) * | 1980-09-19 | 1982-03-31 | Nippon Telegr & Teleph Corp <Ntt> | Insulating gate type transistor |
| JP2773474B2 (ja) * | 1991-08-06 | 1998-07-09 | 日本電気株式会社 | 半導体装置 |
| JP3393237B2 (ja) | 1994-10-04 | 2003-04-07 | ソニー株式会社 | 半導体装置の製造方法 |
| US6331262B1 (en) * | 1998-10-02 | 2001-12-18 | University Of Kentucky Research Foundation | Method of solubilizing shortened single-walled carbon nanotubes in organic solutions |
| JP4112358B2 (ja) * | 2000-07-04 | 2008-07-02 | インフィネオン テクノロジーズ アクチエンゲゼルシャフト | 電界効果トランジスタ |
| JP2002026154A (ja) * | 2000-07-11 | 2002-01-25 | Sanyo Electric Co Ltd | 半導体メモリおよび半導体装置 |
| JP3859199B2 (ja) | 2000-07-18 | 2006-12-20 | エルジー エレクトロニクス インコーポレイティド | カーボンナノチューブの水平成長方法及びこれを利用した電界効果トランジスタ |
| US6524920B1 (en) | 2001-02-09 | 2003-02-25 | Advanced Micro Devices, Inc. | Low temperature process for a transistor with elevated source and drain |
| JP3731486B2 (ja) | 2001-03-16 | 2006-01-05 | 富士ゼロックス株式会社 | トランジスタ |
| JP2003017508A (ja) * | 2001-07-05 | 2003-01-17 | Nec Corp | 電界効果トランジスタ |
| AU2003215840A1 (en) | 2002-03-28 | 2003-10-13 | Koninklijke Philips Electronics N.V. | Nanowire and electronic device |
| JP4974263B2 (ja) * | 2002-05-20 | 2012-07-11 | 富士通株式会社 | 半導体装置の製造方法 |
| CN1176499C (zh) * | 2002-06-13 | 2004-11-17 | 上海交通大学 | 纳米金属氧化线单电子晶体管 |
| JP2004055649A (ja) * | 2002-07-17 | 2004-02-19 | Konica Minolta Holdings Inc | 有機薄膜トランジスタ及びその製造方法 |
| US7115916B2 (en) | 2002-09-26 | 2006-10-03 | International Business Machines Corporation | System and method for molecular optical emission |
| TWI319201B (en) * | 2002-09-30 | 2010-01-01 | Nanosys Inc | Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites |
| US6933222B2 (en) * | 2003-01-02 | 2005-08-23 | Intel Corporation | Microcircuit fabrication and interconnection |
-
2004
- 2004-05-25 US US10/852,891 patent/US7180107B2/en not_active Expired - Lifetime
-
2005
- 2005-05-20 TW TW094116452A patent/TWI339852B/zh not_active IP Right Cessation
- 2005-05-24 CN CN2005800165130A patent/CN101065811B/zh not_active Expired - Lifetime
- 2005-05-24 JP JP2007515262A patent/JP5263755B2/ja not_active Expired - Fee Related
- 2005-05-24 EP EP05856753.8A patent/EP1754262B1/en not_active Expired - Lifetime
- 2005-05-24 WO PCT/US2005/018201 patent/WO2006073477A2/en not_active Ceased
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