JP5263755B2 - トンネル・ナノチューブ電界効果トランジスタおよびそれを製作する方法 - Google Patents
トンネル・ナノチューブ電界効果トランジスタおよびそれを製作する方法 Download PDFInfo
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- 239000002071 nanotube Substances 0.000 title claims description 53
- 230000005669 field effect Effects 0.000 title claims description 20
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000000034 method Methods 0.000 claims description 17
- 239000002019 doping agent Substances 0.000 claims description 16
- 230000005641 tunneling Effects 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 239000002800 charge carrier Substances 0.000 claims description 4
- 239000000460 chlorine Substances 0.000 claims description 4
- 239000011734 sodium Substances 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- 229920002873 Polyethylenimine Polymers 0.000 claims description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052794 bromium Inorganic materials 0.000 claims description 2
- 229910052801 chlorine Inorganic materials 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 16
- 239000000463 material Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000002041 carbon nanotube Substances 0.000 description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052720 vanadium Inorganic materials 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000002070 nanowire Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009429 electrical wiring Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Description
Claims (11)
- トンネル・ナノチューブ電界効果トランジスタを製作する方法であって、
半導体特性を有する炭素(C)ナノチューブを設けるステップと、
前記トランジスタのチャネル領域、第1のドレイン/ソース領域、および第2のドレイン/ソース領域を前記ナノチューブに定義するステップであって、前記第1のドレイン/ソース領域が前記チャネル領域の第1の端に近接し、さらに前記第2のドレイン/ソース領域が前記チャネル領域の第2の端に近接しているステップと、
前記チャネル領域の上にゲート誘電体層を形成するステップと、
前記ゲート誘電体層の上にゲート電極を形成するステップと、
n型ドーパントを使用して前記第1のドレイン/ソース領域に選択的にドープするステップと、
p型ドーパントを使用して前記第2のドレイン/ソース領域に選択的にドープするステップと、
前記ゲート電極および前記ドレイン/ソース領域の各々に少なくとも1つの電気コンタクトを形成するステップと、を含む方法。 - 前記n型ドーパントをドープするステップによってドープされた前記第1のドレイン/ソース領域と、前記p型ドーパントをドープするステップによってドープされた前記第2のドレイン/ソース領域とは、前記チャネル領域で電荷担体の量子力学的トンネリングを可能にする、請求項1に記載の方法。
- トンネル・ナノチューブ電界効果トランジスタであって、
炭素(C)ナノチューブに画定された、半導体特性を有するチャネル領域と、
前記チャネル領域の上に形成されたゲート誘電体層と、
前記ゲート誘電体層の上に形成されたゲート電極と、
前記チャネル領域の第1の端に近接して前記ナノチューブに形成された第1のドレイン/ソース領域であって、n型ドーパントを使用して選択的にドープされた第1のドレイン/ソース領域と、
前記チャネル領域の第2の端に近接して前記ナノチューブに形成された第2のドレイン/ソース領域であって、p型ドーパントを使用して選択的にドープされた第2のドレイン/ソース領域と、
前記ゲート電極および前記ドレイン/ソース領域の各々の上の少なくとも1つの電気コンタクトと、を備えるトンネル・ナノチューブ電界効果トランジスタ。 - 前記第1のドレイン/ソース領域が接地電位の電源に結合され、前記第2のドレイン/ソース領域がドレイン電圧の電源に結合され、さらに前記ゲート電極がゲート電圧の電源に結合され、それによってp型トランジスタ・デバイスを形成している、請求項3に記載のトランジスタ。
- 前記第2のドレイン/ソース領域が接地電位の電源に結合され、前記第1のドレイン/ソース領域がドレイン電圧の電源に結合され、さらに前記ゲート電極がゲート電圧の電源に結合され、それによってn型トランジスタ・デバイスを形成している、請求項3に記載のトランジスタ。
- 前記ナノチューブが、軸方向の開口を有しない、請求項3に記載のトランジスタ。
- 前記ナノチューブの外径が、5nm未満である、請求項3に記載のトランジスタ。
- 前記n型ドーパントでドープされた前記第1のドレイン/ソース領域と前記p型ドーパントでドープされた前記第2のドレイン/ソース領域とは、前記チャネル領域で電荷担体の量子力学的トンネリングを可能にする、請求項3に記載のトランジスタ。
- 前記n型ドーパントが、カリウム(K)、ナトリウム(Na)、およびポリエチレンイミン分子のうちの少なくとも1つを含む、請求項3に記載のトランジスタ。
- 前記p型ドーパントが、塩素(Cl2)および臭素(Br2)のうちの少なくとも1つを含む、請求項3に記載のトランジスタ。
- 前記ゲート誘電体層が、SiO2、HfO2、およびAl2O3のうちの少なくとも1つで1から10nmの厚さに形成されている、請求項3に記載のトランジスタ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/852,891 US7180107B2 (en) | 2004-05-25 | 2004-05-25 | Method of fabricating a tunneling nanotube field effect transistor |
US10/852,891 | 2004-05-25 | ||
PCT/US2005/018201 WO2006073477A2 (en) | 2004-05-25 | 2005-05-24 | Method of fabricating a tunneling nanotube field effect transistor |
Publications (3)
Publication Number | Publication Date |
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JP2008500735A JP2008500735A (ja) | 2008-01-10 |
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-
2004
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CN101065811B (zh) | 2011-03-30 |
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TW200603228A (en) | 2006-01-16 |
CN101065811A (zh) | 2007-10-31 |
US20050274992A1 (en) | 2005-12-15 |
TWI339852B (en) | 2011-04-01 |
WO2006073477A2 (en) | 2006-07-13 |
WO2006073477A3 (en) | 2007-01-25 |
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