CN101065811B - 制造隧穿纳米管场效应晶体管的方法 - Google Patents

制造隧穿纳米管场效应晶体管的方法 Download PDF

Info

Publication number
CN101065811B
CN101065811B CN2005800165130A CN200580016513A CN101065811B CN 101065811 B CN101065811 B CN 101065811B CN 2005800165130 A CN2005800165130 A CN 2005800165130A CN 200580016513 A CN200580016513 A CN 200580016513A CN 101065811 B CN101065811 B CN 101065811B
Authority
CN
China
Prior art keywords
transistor
drain
nanotube
source region
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2005800165130A
Other languages
English (en)
Chinese (zh)
Other versions
CN101065811A (zh
Inventor
J·阿彭策勒
J·克诺赫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Forschungszentrum Juelich GmbH
International Business Machines Corp
Original Assignee
Forschungszentrum Juelich GmbH
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forschungszentrum Juelich GmbH, International Business Machines Corp filed Critical Forschungszentrum Juelich GmbH
Publication of CN101065811A publication Critical patent/CN101065811A/zh
Application granted granted Critical
Publication of CN101065811B publication Critical patent/CN101065811B/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
    • Y10S977/742—Carbon nanotubes, CNTs
    • Y10S977/745—Carbon nanotubes, CNTs having a modified surface
    • Y10S977/749—Modified with dissimilar atoms or molecules substituted for carbon atoms of the cnt, e.g. impurity doping or compositional substitution
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/755—Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/813—Of specified inorganic semiconductor composition, e.g. periodic table group IV-VI compositions
    • Y10S977/815—Group III-V based compounds, e.g. AlaGabIncNxPyAsz
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/849—Manufacture, treatment, or detection of nanostructure with scanning probe
    • Y10S977/855—Manufacture, treatment, or detection of nanostructure with scanning probe for manufacture of nanostructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN2005800165130A 2004-05-25 2005-05-24 制造隧穿纳米管场效应晶体管的方法 Expired - Lifetime CN101065811B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/852,891 US7180107B2 (en) 2004-05-25 2004-05-25 Method of fabricating a tunneling nanotube field effect transistor
US10/852,891 2004-05-25
PCT/US2005/018201 WO2006073477A2 (en) 2004-05-25 2005-05-24 Method of fabricating a tunneling nanotube field effect transistor

Publications (2)

Publication Number Publication Date
CN101065811A CN101065811A (zh) 2007-10-31
CN101065811B true CN101065811B (zh) 2011-03-30

Family

ID=35459605

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005800165130A Expired - Lifetime CN101065811B (zh) 2004-05-25 2005-05-24 制造隧穿纳米管场效应晶体管的方法

Country Status (6)

Country Link
US (1) US7180107B2 (enExample)
EP (1) EP1754262B1 (enExample)
JP (1) JP5263755B2 (enExample)
CN (1) CN101065811B (enExample)
TW (1) TWI339852B (enExample)
WO (1) WO2006073477A2 (enExample)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0415891D0 (en) * 2004-07-16 2004-08-18 Koninkl Philips Electronics Nv Nanoscale fet
KR101025846B1 (ko) * 2004-09-13 2011-03-30 삼성전자주식회사 탄소나노튜브 채널을 포함하는 반도체 장치의 트랜지스터
WO2006077585A2 (en) * 2005-01-18 2006-07-27 Shye Shapira Apparatus and method for control of tunneling in a small-scale electronic structure
KR100682925B1 (ko) * 2005-01-26 2007-02-15 삼성전자주식회사 멀티비트 비휘발성 메모리 소자 및 그 동작 방법
DE102005046427B4 (de) * 2005-09-28 2010-09-23 Infineon Technologies Ag Leistungstransistor mit parallelgeschalteten Nanodrähten
US7492015B2 (en) * 2005-11-10 2009-02-17 International Business Machines Corporation Complementary carbon nanotube triple gate technology
ATE529894T1 (de) * 2006-01-25 2011-11-15 Nxp Bv Nanodraht-tunneltransistor
WO2007099642A1 (ja) * 2006-03-03 2007-09-07 Fujitsu Limited カーボンナノチューブを用いた電界効果トランジスタとその製造方法及びセンサ
CN100435351C (zh) * 2006-04-28 2008-11-19 北京芯技佳易微电子科技有限公司 利用偶极效应调制纳米级场效应晶体管的输运特性的方法
EP1900681B1 (en) 2006-09-15 2017-03-15 Imec Tunnel Field-Effect Transistors based on silicon nanowires
JP5171161B2 (ja) * 2006-09-15 2013-03-27 アイメック ナノワイヤトンネル電界効果トランジスタ半導体装置およびその製造方法
US7893476B2 (en) * 2006-09-15 2011-02-22 Imec Tunnel effect transistors based on silicon nanowires
EP1901355B1 (en) * 2006-09-15 2015-11-11 Imec Tunnel effect transistors based on monocrystalline nanowires having a heterostructure
EP1901354B1 (en) 2006-09-15 2016-08-24 Imec A tunnel field-effect transistor with gated tunnel barrier
US8120115B2 (en) * 2007-03-12 2012-02-21 Imec Tunnel field-effect transistor with gated tunnel barrier
WO2008157509A2 (en) * 2007-06-14 2008-12-24 University Of Florida Research Foundation, Inc. Room temperature carbon nanotubes integrated on cmos
US8378333B2 (en) * 2007-09-27 2013-02-19 University Of Maryland Lateral two-terminal nanotube devices and method for their formation
US8043978B2 (en) * 2007-10-11 2011-10-25 Riken Electronic device and method for producing electronic device
EP2161755A1 (en) * 2008-09-05 2010-03-10 University College Cork-National University of Ireland, Cork Junctionless Metal-Oxide-Semiconductor Transistor
US10032569B2 (en) * 2009-08-26 2018-07-24 University Of Maryland, College Park Nanodevice arrays for electrical energy storage, capture and management and method for their formation
US8912522B2 (en) * 2009-08-26 2014-12-16 University Of Maryland Nanodevice arrays for electrical energy storage, capture and management and method for their formation
US8288803B2 (en) * 2009-08-31 2012-10-16 International Business Machines Corporation Tunnel field effect devices
US8698254B2 (en) 2009-09-30 2014-04-15 National University Corporation Hokkaido University Tunnel field effect transistor and method for manufacturing same
US8384065B2 (en) * 2009-12-04 2013-02-26 International Business Machines Corporation Gate-all-around nanowire field effect transistors
US8097515B2 (en) * 2009-12-04 2012-01-17 International Business Machines Corporation Self-aligned contacts for nanowire field effect transistors
US8129247B2 (en) 2009-12-04 2012-03-06 International Business Machines Corporation Omega shaped nanowire field effect transistors
US8173993B2 (en) * 2009-12-04 2012-05-08 International Business Machines Corporation Gate-all-around nanowire tunnel field effect transistors
US8455334B2 (en) 2009-12-04 2013-06-04 International Business Machines Corporation Planar and nanowire field effect transistors
US8143113B2 (en) 2009-12-04 2012-03-27 International Business Machines Corporation Omega shaped nanowire tunnel field effect transistors fabrication
US20120248417A1 (en) * 2009-12-21 2012-10-04 Imec Double gate nanostructure fet
US8722492B2 (en) 2010-01-08 2014-05-13 International Business Machines Corporation Nanowire pin tunnel field effect devices
CN101777499B (zh) * 2010-01-22 2011-08-24 北京大学 一种基于平面工艺自对准制备隧穿场效应晶体管的方法
US8324940B2 (en) 2010-04-13 2012-12-04 International Business Machines Corporation Nanowire circuits in matched devices
US8361907B2 (en) 2010-05-10 2013-01-29 International Business Machines Corporation Directionally etched nanowire field effect transistors
US8324030B2 (en) 2010-05-12 2012-12-04 International Business Machines Corporation Nanowire tunnel field effect transistors
US8445320B2 (en) * 2010-05-20 2013-05-21 International Business Machines Corporation Graphene channel-based devices and methods for fabrication thereof
US8835231B2 (en) 2010-08-16 2014-09-16 International Business Machines Corporation Methods of forming contacts for nanowire field effect transistors
US8536563B2 (en) 2010-09-17 2013-09-17 International Business Machines Corporation Nanowire field effect transistors
KR101733050B1 (ko) * 2010-11-22 2017-05-08 삼성전자주식회사 3개의 단자를 갖는 공진기 및 그 제조 방법
CN102683209B (zh) * 2011-03-18 2015-01-21 中国科学院微电子研究所 一种半导体器件及其制造方法
CN103094347B (zh) * 2013-01-11 2015-09-02 南京邮电大学 一种双材料欠叠异质栅结构的碳纳米管场效应管
CN103247688B (zh) * 2013-04-22 2016-08-17 南京邮电大学 一种双材料栅线性掺杂的石墨烯场效应管
US8975123B2 (en) 2013-07-09 2015-03-10 International Business Machines Corporation Tunnel field-effect transistors with a gate-swing broken-gap heterostructure
US9203041B2 (en) * 2014-01-31 2015-12-01 International Business Machines Corporation Carbon nanotube transistor having extended contacts
CN105097904B (zh) 2014-05-05 2019-01-25 中芯国际集成电路制造(上海)有限公司 隧穿碳纳米管场效应晶体管及其制造方法
CN105097913B (zh) * 2014-05-05 2018-12-04 中芯国际集成电路制造(上海)有限公司 场效应晶体管及其制造方法
KR102154185B1 (ko) 2014-09-19 2020-09-09 삼성전자 주식회사 반도체 소자
CN105990147B (zh) * 2015-02-27 2019-01-22 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制作方法和电子装置
CN106601738B (zh) * 2015-10-15 2018-08-24 上海新昇半导体科技有限公司 互补场效应晶体管及其制备方法
JP6730598B2 (ja) * 2016-07-19 2020-07-29 富士通株式会社 半導体装置
US10170702B2 (en) 2017-01-12 2019-01-01 International Business Machines Corporation Intermetallic contact for carbon nanotube FETs
JP6773615B2 (ja) * 2017-08-21 2020-10-21 日本電信電話株式会社 ナノワイヤトランジスタの製造方法
US10818785B2 (en) * 2017-12-04 2020-10-27 Ecole Polytechnique Federale De Lausanne (Epfl) Sensing device for sensing minor charge variations
CN108598170B (zh) 2018-05-24 2022-07-08 厦门半导体工业技术研发有限公司 纳米线晶体管及其制作方法
US11165032B2 (en) * 2019-09-05 2021-11-02 Taiwan Semiconductor Manufacturing Co., Ltd. Field effect transistor using carbon nanotubes

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331262B1 (en) * 1998-10-02 2001-12-18 University Of Kentucky Research Foundation Method of solubilizing shortened single-walled carbon nanotubes in organic solutions
CN1383213A (zh) * 2002-06-13 2002-12-04 上海交通大学 纳米金属氧化线单电子晶体管

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US130333A (en) * 1872-08-06 Improvement in machines for glazing and polishing saw-blades
JPS5754370A (en) * 1980-09-19 1982-03-31 Nippon Telegr & Teleph Corp <Ntt> Insulating gate type transistor
JP2773474B2 (ja) * 1991-08-06 1998-07-09 日本電気株式会社 半導体装置
JP3393237B2 (ja) 1994-10-04 2003-04-07 ソニー株式会社 半導体装置の製造方法
JP4112358B2 (ja) * 2000-07-04 2008-07-02 インフィネオン テクノロジーズ アクチエンゲゼルシャフト 電界効果トランジスタ
JP2002026154A (ja) * 2000-07-11 2002-01-25 Sanyo Electric Co Ltd 半導体メモリおよび半導体装置
JP3859199B2 (ja) 2000-07-18 2006-12-20 エルジー エレクトロニクス インコーポレイティド カーボンナノチューブの水平成長方法及びこれを利用した電界効果トランジスタ
US6524920B1 (en) 2001-02-09 2003-02-25 Advanced Micro Devices, Inc. Low temperature process for a transistor with elevated source and drain
JP3731486B2 (ja) 2001-03-16 2006-01-05 富士ゼロックス株式会社 トランジスタ
JP2003017508A (ja) * 2001-07-05 2003-01-17 Nec Corp 電界効果トランジスタ
AU2003215840A1 (en) 2002-03-28 2003-10-13 Koninklijke Philips Electronics N.V. Nanowire and electronic device
JP4974263B2 (ja) * 2002-05-20 2012-07-11 富士通株式会社 半導体装置の製造方法
JP2004055649A (ja) * 2002-07-17 2004-02-19 Konica Minolta Holdings Inc 有機薄膜トランジスタ及びその製造方法
US7115916B2 (en) 2002-09-26 2006-10-03 International Business Machines Corporation System and method for molecular optical emission
TWI319201B (en) * 2002-09-30 2010-01-01 Nanosys Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
US6933222B2 (en) * 2003-01-02 2005-08-23 Intel Corporation Microcircuit fabrication and interconnection

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6331262B1 (en) * 1998-10-02 2001-12-18 University Of Kentucky Research Foundation Method of solubilizing shortened single-walled carbon nanotubes in organic solutions
CN1383213A (zh) * 2002-06-13 2002-12-04 上海交通大学 纳米金属氧化线单电子晶体管

Also Published As

Publication number Publication date
WO2006073477A3 (en) 2007-01-25
EP1754262B1 (en) 2015-04-08
US7180107B2 (en) 2007-02-20
TW200603228A (en) 2006-01-16
EP1754262A2 (en) 2007-02-21
WO2006073477A2 (en) 2006-07-13
JP5263755B2 (ja) 2013-08-14
TWI339852B (en) 2011-04-01
CN101065811A (zh) 2007-10-31
JP2008500735A (ja) 2008-01-10
US20050274992A1 (en) 2005-12-15
EP1754262A4 (en) 2012-03-14

Similar Documents

Publication Publication Date Title
CN101065811B (zh) 制造隧穿纳米管场效应晶体管的方法
US8148220B2 (en) Tunnel effect transistors based on elongate monocrystalline nanostructures having a heterostructure
US8900935B2 (en) Deposition on a nanowire using atomic layer deposition
US9564514B2 (en) Reducing direct source-to-drain tunneling in field effect transistors with low effective mass channels
JP5171161B2 (ja) ナノワイヤトンネル電界効果トランジスタ半導体装置およびその製造方法
EP1760777A2 (en) Transistors and methods of manufacture thereof
US10381586B2 (en) Carbon nanotube field-effect transistor with sidewall-protected metal contacts
CN101449366A (zh) 使用ⅲ-ⅴ族化合物半导体及高介电常数栅极电介质的掩埋沟道金属氧化物半导体场效应晶体管
Xie et al. Highly-scaled self-aligned GaN complementary technology on a GaN-on-Si platform
US8815669B2 (en) Metal gate structures for CMOS transistor devices having reduced parasitic capacitance
WO2021227345A1 (en) Transistor and method for fabricating the same
US8735903B2 (en) Density of states engineered field effect transistor
EP1901355B1 (en) Tunnel effect transistors based on monocrystalline nanowires having a heterostructure
US20230290856A1 (en) Transistor and method for fabricating the same
CN113690300A (zh) 具有局域底栅的晶体管及其制作方法
US7112847B1 (en) Smooth fin topology in a FinFET device
Liu et al. Vertical heterojunction Ge0. 92Sn0. 08/Ge gate-all-around nanowire pMOSFETs
Sandhyarani et al. Optimization of Design Parameters in Nanoscale Reconfigurable FET for Improved Performance

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term

Granted publication date: 20110330

CX01 Expiry of patent term