JP2014506002A5 - - Google Patents
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- Publication number
- JP2014506002A5 JP2014506002A5 JP2013543654A JP2013543654A JP2014506002A5 JP 2014506002 A5 JP2014506002 A5 JP 2014506002A5 JP 2013543654 A JP2013543654 A JP 2013543654A JP 2013543654 A JP2013543654 A JP 2013543654A JP 2014506002 A5 JP2014506002 A5 JP 2014506002A5
- Authority
- JP
- Japan
- Prior art keywords
- memory
- energy
- semiconductor layer
- energy states
- quantum dot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 10
- 239000002096 quantum dot Substances 0.000 claims 8
- 230000005669 field effect Effects 0.000 claims 5
- 239000004047 hole gas Substances 0.000 claims 3
- 239000003362 semiconductor superlattice Substances 0.000 claims 3
- 230000005641 tunneling Effects 0.000 claims 3
- 239000002800 charge carrier Substances 0.000 claims 2
- 230000004888 barrier function Effects 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 125000005842 heteroatom Chemical group 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/970,744 | 2010-12-16 | ||
| US12/970,744 US8331142B2 (en) | 2010-12-16 | 2010-12-16 | Memory |
| PCT/EP2011/072181 WO2012080076A1 (en) | 2010-12-16 | 2011-12-08 | Memory device comprising a strained semiconductor double-heterostructure and quantum dots |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014506002A JP2014506002A (ja) | 2014-03-06 |
| JP2014506002A5 true JP2014506002A5 (enExample) | 2015-01-15 |
| JP5689540B2 JP5689540B2 (ja) | 2015-03-25 |
Family
ID=45476459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013543654A Active JP5689540B2 (ja) | 2010-12-16 | 2011-12-08 | 半導体歪みダブルへテロ構造及び量子ドットを備えるメモリデバイス |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8331142B2 (enExample) |
| EP (1) | EP2652789B1 (enExample) |
| JP (1) | JP5689540B2 (enExample) |
| KR (1) | KR101567994B1 (enExample) |
| WO (1) | WO2012080076A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9082637B2 (en) * | 2012-08-17 | 2015-07-14 | The University Of Connecticut | Optoelectronic integrated circuit |
| JP6415956B2 (ja) | 2014-12-09 | 2018-10-31 | 東芝メモリ株式会社 | 半導体記憶装置及びその制御方法 |
| GB201907540D0 (en) | 2019-05-29 | 2019-07-10 | Univ Of Lancaster | Improvements relating to electronic memory devices |
| CN116867276B (zh) * | 2023-06-07 | 2023-12-12 | 合肥美镓传感科技有限公司 | 氮化镓非挥发性存储器件及其制备方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3672678B2 (ja) * | 1996-04-05 | 2005-07-20 | 富士通株式会社 | 量子半導体装置およびその製造方法 |
| US6281519B1 (en) * | 1997-08-13 | 2001-08-28 | Fujitsu Limited | Quantum semiconductor memory device including quantum dots |
| JP4116722B2 (ja) | 1998-12-28 | 2008-07-09 | 富士通株式会社 | 量子半導体記憶装置および量子半導体記憶装置の読み出し方法 |
| KR100377498B1 (ko) * | 2000-09-09 | 2003-03-26 | 한국과학기술연구원 | 양자점 구조 반도체 소자의 제조 방법 및 이에 의해 제조된 반도체 소자 |
| EP2192617B1 (en) * | 2002-05-22 | 2012-02-01 | Fujitsu Limited | Quantum Semiconductor Device and Method for Fabricating the Same |
| US7750425B2 (en) * | 2005-12-16 | 2010-07-06 | The Trustees Of Princeton University | Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier |
| DE102006059110A1 (de) | 2006-12-08 | 2008-06-12 | Technische Universität Berlin | Speicherzelle und Verfahren zum Speichern von Daten |
-
2010
- 2010-12-16 US US12/970,744 patent/US8331142B2/en active Active
-
2011
- 2011-12-08 WO PCT/EP2011/072181 patent/WO2012080076A1/en not_active Ceased
- 2011-12-08 JP JP2013543654A patent/JP5689540B2/ja active Active
- 2011-12-08 KR KR1020137011088A patent/KR101567994B1/ko active Active
- 2011-12-08 EP EP11807878.1A patent/EP2652789B1/en active Active
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