JP5689540B2 - 半導体歪みダブルへテロ構造及び量子ドットを備えるメモリデバイス - Google Patents

半導体歪みダブルへテロ構造及び量子ドットを備えるメモリデバイス Download PDF

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JP5689540B2
JP5689540B2 JP2013543654A JP2013543654A JP5689540B2 JP 5689540 B2 JP5689540 B2 JP 5689540B2 JP 2013543654 A JP2013543654 A JP 2013543654A JP 2013543654 A JP2013543654 A JP 2013543654A JP 5689540 B2 JP5689540 B2 JP 5689540B2
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memory
energy
double heterostructure
semiconductor layer
holes
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JP2014506002A (ja
JP2014506002A5 (enExample
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ビンベルグ，ディーテル
ゲラー，マルティン
ノヴォツィン，トビアス
マレント，アンドレアス
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テクニシェ ウニベルズィテート ベルリン
テクニシェ ウニベルズィテート ベルリン
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H10D30/803—Programmable transistors, e.g. having charge-trapping quantum well
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Junction Field-Effect Transistors (AREA)
JP2013543654A 2010-12-16 2011-12-08 半導体歪みダブルへテロ構造及び量子ドットを備えるメモリデバイス Active JP5689540B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/970,744 2010-12-16
US12/970,744 US8331142B2 (en) 2010-12-16 2010-12-16 Memory
PCT/EP2011/072181 WO2012080076A1 (en) 2010-12-16 2011-12-08 Memory device comprising a strained semiconductor double-heterostructure and quantum dots

Publications (3)

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JP2014506002A JP2014506002A (ja) 2014-03-06
JP2014506002A5 JP2014506002A5 (enExample) 2015-01-15
JP5689540B2 true JP5689540B2 (ja) 2015-03-25

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JP2013543654A Active JP5689540B2 (ja) 2010-12-16 2011-12-08 半導体歪みダブルへテロ構造及び量子ドットを備えるメモリデバイス

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US (1) US8331142B2 (enExample)
EP (1) EP2652789B1 (enExample)
JP (1) JP5689540B2 (enExample)
KR (1) KR101567994B1 (enExample)
WO (1) WO2012080076A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9082637B2 (en) * 2012-08-17 2015-07-14 The University Of Connecticut Optoelectronic integrated circuit
JP6415956B2 (ja) 2014-12-09 2018-10-31 東芝メモリ株式会社 半導体記憶装置及びその制御方法
GB201907540D0 (en) 2019-05-29 2019-07-10 Univ Of Lancaster Improvements relating to electronic memory devices
CN116867276B (zh) * 2023-06-07 2023-12-12 合肥美镓传感科技有限公司 氮化镓非挥发性存储器件及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3672678B2 (ja) * 1996-04-05 2005-07-20 富士通株式会社 量子半導体装置およびその製造方法
US6281519B1 (en) * 1997-08-13 2001-08-28 Fujitsu Limited Quantum semiconductor memory device including quantum dots
JP4116722B2 (ja) 1998-12-28 2008-07-09 富士通株式会社 量子半導体記憶装置および量子半導体記憶装置の読み出し方法
KR100377498B1 (ko) * 2000-09-09 2003-03-26 한국과학기술연구원 양자점 구조 반도체 소자의 제조 방법 및 이에 의해 제조된 반도체 소자
EP2192617B1 (en) * 2002-05-22 2012-02-01 Fujitsu Limited Quantum Semiconductor Device and Method for Fabricating the Same
US7750425B2 (en) * 2005-12-16 2010-07-06 The Trustees Of Princeton University Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier
DE102006059110A1 (de) 2006-12-08 2008-06-12 Technische Universität Berlin Speicherzelle und Verfahren zum Speichern von Daten

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Publication number Publication date
US20120155165A1 (en) 2012-06-21
KR101567994B1 (ko) 2015-11-10
WO2012080076A1 (en) 2012-06-21
KR20140027904A (ko) 2014-03-07
EP2652789B1 (en) 2020-07-08
JP2014506002A (ja) 2014-03-06
EP2652789A1 (en) 2013-10-23
US8331142B2 (en) 2012-12-11

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