KR101567994B1 - 변형된 반도체 더블-헤테로구조체 및 양자점들을 포함하는 메모리 디바이스 - Google Patents

변형된 반도체 더블-헤테로구조체 및 양자점들을 포함하는 메모리 디바이스 Download PDF

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KR101567994B1
KR101567994B1 KR1020137011088A KR20137011088A KR101567994B1 KR 101567994 B1 KR101567994 B1 KR 101567994B1 KR 1020137011088 A KR1020137011088 A KR 1020137011088A KR 20137011088 A KR20137011088 A KR 20137011088A KR 101567994 B1 KR101567994 B1 KR 101567994B1
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energy
double
energy states
memory
holes
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KR20140027904A (ko
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디에터 프로페서 닥터 빔베르크
마틴 젤러
토비아스 노보진
안드레아스 마렌트
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테크니쉐 유니베르시타트 베를린
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H10D30/803—Programmable transistors, e.g. having charge-trapping quantum well
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Junction Field-Effect Transistors (AREA)
KR1020137011088A 2010-12-16 2011-12-08 변형된 반도체 더블-헤테로구조체 및 양자점들을 포함하는 메모리 디바이스 Active KR101567994B1 (ko)

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Application Number Priority Date Filing Date Title
US12/970,744 2010-12-16
US12/970,744 US8331142B2 (en) 2010-12-16 2010-12-16 Memory
PCT/EP2011/072181 WO2012080076A1 (en) 2010-12-16 2011-12-08 Memory device comprising a strained semiconductor double-heterostructure and quantum dots

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KR20140027904A KR20140027904A (ko) 2014-03-07
KR101567994B1 true KR101567994B1 (ko) 2015-11-10

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US (1) US8331142B2 (enExample)
EP (1) EP2652789B1 (enExample)
JP (1) JP5689540B2 (enExample)
KR (1) KR101567994B1 (enExample)
WO (1) WO2012080076A1 (enExample)

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US9082637B2 (en) * 2012-08-17 2015-07-14 The University Of Connecticut Optoelectronic integrated circuit
JP6415956B2 (ja) 2014-12-09 2018-10-31 東芝メモリ株式会社 半導体記憶装置及びその制御方法
GB201907540D0 (en) 2019-05-29 2019-07-10 Univ Of Lancaster Improvements relating to electronic memory devices
CN116867276B (zh) * 2023-06-07 2023-12-12 合肥美镓传感科技有限公司 氮化镓非挥发性存储器件及其制备方法

Citations (1)

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Publication number Priority date Publication date Assignee Title
JP4116722B2 (ja) 1998-12-28 2008-07-09 富士通株式会社 量子半導体記憶装置および量子半導体記憶装置の読み出し方法

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JP3672678B2 (ja) * 1996-04-05 2005-07-20 富士通株式会社 量子半導体装置およびその製造方法
US6281519B1 (en) * 1997-08-13 2001-08-28 Fujitsu Limited Quantum semiconductor memory device including quantum dots
KR100377498B1 (ko) * 2000-09-09 2003-03-26 한국과학기술연구원 양자점 구조 반도체 소자의 제조 방법 및 이에 의해 제조된 반도체 소자
EP2192617B1 (en) * 2002-05-22 2012-02-01 Fujitsu Limited Quantum Semiconductor Device and Method for Fabricating the Same
US7750425B2 (en) * 2005-12-16 2010-07-06 The Trustees Of Princeton University Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier
DE102006059110A1 (de) 2006-12-08 2008-06-12 Technische Universität Berlin Speicherzelle und Verfahren zum Speichern von Daten

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4116722B2 (ja) 1998-12-28 2008-07-09 富士通株式会社 量子半導体記憶装置および量子半導体記憶装置の読み出し方法

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US20120155165A1 (en) 2012-06-21
WO2012080076A1 (en) 2012-06-21
KR20140027904A (ko) 2014-03-07
EP2652789B1 (en) 2020-07-08
JP2014506002A (ja) 2014-03-06
EP2652789A1 (en) 2013-10-23
US8331142B2 (en) 2012-12-11
JP5689540B2 (ja) 2015-03-25

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