JP2010509772A5 - - Google Patents

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Publication number
JP2010509772A5
JP2010509772A5 JP2009536283A JP2009536283A JP2010509772A5 JP 2010509772 A5 JP2010509772 A5 JP 2010509772A5 JP 2009536283 A JP2009536283 A JP 2009536283A JP 2009536283 A JP2009536283 A JP 2009536283A JP 2010509772 A5 JP2010509772 A5 JP 2010509772A5
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Japan
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semiconductor material
quantum
layer
layers
dot
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JP2009536283A
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English (en)
Japanese (ja)
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JP5513891B2 (ja
JP2010509772A (ja
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Priority claimed from US11/598,006 external-priority patent/US7750425B2/en
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Publication of JP2010509772A publication Critical patent/JP2010509772A/ja
Publication of JP2010509772A5 publication Critical patent/JP2010509772A5/ja
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Publication of JP5513891B2 publication Critical patent/JP5513891B2/ja
Expired - Fee Related legal-status Critical Current
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JP2009536283A 2006-11-13 2007-11-06 エネルギー囲み障壁に埋設された量子ドットを有する中間バンド感光性デバイス Expired - Fee Related JP5513891B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/598,006 2006-11-13
US11/598,006 US7750425B2 (en) 2005-12-16 2006-11-13 Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier
PCT/US2007/023447 WO2008147392A2 (en) 2006-11-13 2007-11-06 Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013183462A Division JP5584339B2 (ja) 2006-11-13 2013-09-04 エネルギー囲み障壁に埋設された量子ドットを有する中間バンド感光性デバイス

Publications (3)

Publication Number Publication Date
JP2010509772A JP2010509772A (ja) 2010-03-25
JP2010509772A5 true JP2010509772A5 (enExample) 2011-12-22
JP5513891B2 JP5513891B2 (ja) 2014-06-04

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JP2009536283A Expired - Fee Related JP5513891B2 (ja) 2006-11-13 2007-11-06 エネルギー囲み障壁に埋設された量子ドットを有する中間バンド感光性デバイス
JP2013183462A Expired - Fee Related JP5584339B2 (ja) 2006-11-13 2013-09-04 エネルギー囲み障壁に埋設された量子ドットを有する中間バンド感光性デバイス

Family Applications After (1)

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JP2013183462A Expired - Fee Related JP5584339B2 (ja) 2006-11-13 2013-09-04 エネルギー囲み障壁に埋設された量子ドットを有する中間バンド感光性デバイス

Country Status (7)

Country Link
US (1) US7750425B2 (enExample)
EP (1) EP2084755B1 (enExample)
JP (2) JP5513891B2 (enExample)
KR (1) KR101352654B1 (enExample)
CN (1) CN101622718B (enExample)
TW (1) TWI427803B (enExample)
WO (1) WO2008147392A2 (enExample)

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JP5672983B2 (ja) * 2010-11-04 2015-02-18 富士通株式会社 発光半導体素子及びその製造方法
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