JP2010108722A5 - - Google Patents

Download PDF

Info

Publication number
JP2010108722A5
JP2010108722A5 JP2008278867A JP2008278867A JP2010108722A5 JP 2010108722 A5 JP2010108722 A5 JP 2010108722A5 JP 2008278867 A JP2008278867 A JP 2008278867A JP 2008278867 A JP2008278867 A JP 2008278867A JP 2010108722 A5 JP2010108722 A5 JP 2010108722A5
Authority
JP
Japan
Prior art keywords
semiconductor
miniband
thickness
photocathode
superlattice structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2008278867A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010108722A (ja
JP5267931B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008278867A priority Critical patent/JP5267931B2/ja
Priority claimed from JP2008278867A external-priority patent/JP5267931B2/ja
Priority to US12/589,661 priority patent/US8143615B2/en
Publication of JP2010108722A publication Critical patent/JP2010108722A/ja
Publication of JP2010108722A5 publication Critical patent/JP2010108722A5/ja
Application granted granted Critical
Publication of JP5267931B2 publication Critical patent/JP5267931B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2008278867A 2008-10-29 2008-10-29 光陰極半導体素子 Expired - Fee Related JP5267931B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008278867A JP5267931B2 (ja) 2008-10-29 2008-10-29 光陰極半導体素子
US12/589,661 US8143615B2 (en) 2008-10-29 2009-10-27 Electron beam emitting device with a superlattice structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008278867A JP5267931B2 (ja) 2008-10-29 2008-10-29 光陰極半導体素子

Publications (3)

Publication Number Publication Date
JP2010108722A JP2010108722A (ja) 2010-05-13
JP2010108722A5 true JP2010108722A5 (enExample) 2011-11-04
JP5267931B2 JP5267931B2 (ja) 2013-08-21

Family

ID=42130297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008278867A Expired - Fee Related JP5267931B2 (ja) 2008-10-29 2008-10-29 光陰極半導体素子

Country Status (2)

Country Link
US (1) US8143615B2 (enExample)
JP (1) JP5267931B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5808021B2 (ja) * 2013-07-16 2015-11-10 国立大学法人名古屋大学 電子親和力の低下処理装置に用いられる活性化容器及びキット、該キットを含む電子親和力の低下処理装置、フォトカソード電子ビーム源、並びに、フォトカソード電子ビーム源を含む電子銃、自由電子レーザー加速器、透過型電子顕微鏡、走査型電子顕微鏡、電子線ホログラフィー顕微鏡、電子線描画装置、電子線回折装置及び電子線検査装置
US10692683B2 (en) 2017-09-12 2020-06-23 Intevac, Inc. Thermally assisted negative electron affinity photocathode
CN111192914B (zh) * 2017-10-18 2023-10-31 汉阳大学校产学协力团 层、多级元件、多级元件制造方法和驱动多级元件的方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2612572B2 (ja) * 1987-04-14 1997-05-21 キヤノン株式会社 電子放出素子
US5563423A (en) * 1991-08-15 1996-10-08 Hughes Aircraft Company Dark current-free multiquantum well superlattice infrared detector
US5296720A (en) * 1991-11-17 1994-03-22 Hughes Aircraft Company Apparatus and method for discriminating against undesired radiation in a multiple quantum well long wavelength infrared detector
JP3154569B2 (ja) 1992-09-25 2001-04-09 克巳 岸野 偏極電子線発生素子
JPH06115221A (ja) 1992-10-05 1994-04-26 Konica Corp プリンタ
US5877510A (en) * 1994-05-27 1999-03-02 Nec Corporation Spin polarized electron semiconductor source and apparatus utilizing the same
US5510627A (en) * 1994-06-29 1996-04-23 The United States Of America As Represented By The Secretary Of The Navy Infrared-to-visible converter
JPH08222164A (ja) * 1995-02-14 1996-08-30 Daido Steel Co Ltd 低速電子線源
US6130466A (en) * 1995-10-17 2000-10-10 Fraunhofer Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Semiconductor heterostructure radiation detector having two spectral sensitivity ranges
US7286585B2 (en) * 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US6875975B2 (en) * 1999-12-24 2005-04-05 Bae Systems Information And Electronic Systems Integration Inc Multi-color, multi-focal plane optical detector
US7253432B2 (en) * 2000-10-16 2007-08-07 Georgia State University Research Foundation, Inc. Heterojunction far infrared photodetector
JP2003142783A (ja) * 2001-11-08 2003-05-16 Hitachi Ltd 半導体レーザおよびそれを用いた光モジュール
US7205563B2 (en) * 2004-03-18 2007-04-17 Bae Systems Information And Electronic Systems Integration Inc. QWIP with electron launcher for reducing dielectric relaxation effect in low background conditions
US7838869B2 (en) * 2005-10-21 2010-11-23 Georgia State University Research Foundation, Inc. Dual band photodetector
JP2007258119A (ja) * 2006-03-24 2007-10-04 Univ Nagoya スピン偏極電子発生装置
US7381966B2 (en) * 2006-04-13 2008-06-03 Integrated Micro Sensors, Inc. Single-chip monolithic dual-band visible- or solar-blind photodetector

Similar Documents

Publication Publication Date Title
CN101771120B (zh) 半导体发光元件
CN101933153B (zh) Ⅱ型量子点太阳能电池
JP5284365B2 (ja) 電流拡散層を有するｌｅｄ
JP2013239690A (ja) 超格子構造、前記超格子構造を備えた半導体装置および半導体発光装置、ならびに前記超格子構造の製造方法
JP4892618B2 (ja) 半導体発光素子
TW200939519A (en) Light emitting diode of III-nitride based semiconductor
CN103489973B (zh) 半导体发光结构
JP2014131019A5 (enExample)
CN105917476A (zh) 其有源区包括InN层的发光二极管
JP4905623B2 (ja) 太陽電池
CN103441196A (zh) 发光元件及其制造方法
KR101283538B1 (ko) 표면 플라즈몬 공명을 이용하여 발광 특성이 향상된 발광소자
JP2017092460A (ja) 紫外線発光素子
JP2015065245A (ja) 半導体発光素子及び半導体発光素子の製造方法
US20140084243A1 (en) Light emitting diode with three-dimensional nano-structures
JP2015188048A (ja) 窒化物半導体積層体および半導体発光素子
JP2010108722A5 (enExample)
JP2004253802A5 (enExample)
KR20120059060A (ko) 나노파티클을 구비한 적층구조 및 이를 포함하는 발광소자
JP5388469B2 (ja) 発光素子
JP2008187022A (ja) 赤外線検知器
JP5267931B2 (ja) 光陰極半導体素子
JP2013229388A (ja) 多積層量子ドット構造体およびその製造方法、並びにそれを用いた太陽電池素子
CN102629637A (zh) 一种含量子级联结构的波长上转换器件
JP2013058580A (ja) 量子型赤外線検出器