JP5267931B2 - 光陰極半導体素子 - Google Patents

光陰極半導体素子 Download PDF

Info

Publication number
JP5267931B2
JP5267931B2 JP2008278867A JP2008278867A JP5267931B2 JP 5267931 B2 JP5267931 B2 JP 5267931B2 JP 2008278867 A JP2008278867 A JP 2008278867A JP 2008278867 A JP2008278867 A JP 2008278867A JP 5267931 B2 JP5267931 B2 JP 5267931B2
Authority
JP
Japan
Prior art keywords
semiconductor
miniband
thickness
layer
photocathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2008278867A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010108722A (ja
JP2010108722A5 (enExample
Inventor
智博 西谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RIKEN
Original Assignee
RIKEN
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RIKEN filed Critical RIKEN
Priority to JP2008278867A priority Critical patent/JP5267931B2/ja
Priority to US12/589,661 priority patent/US8143615B2/en
Publication of JP2010108722A publication Critical patent/JP2010108722A/ja
Publication of JP2010108722A5 publication Critical patent/JP2010108722A5/ja
Application granted granted Critical
Publication of JP5267931B2 publication Critical patent/JP5267931B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes

Landscapes

  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
JP2008278867A 2008-10-29 2008-10-29 光陰極半導体素子 Expired - Fee Related JP5267931B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008278867A JP5267931B2 (ja) 2008-10-29 2008-10-29 光陰極半導体素子
US12/589,661 US8143615B2 (en) 2008-10-29 2009-10-27 Electron beam emitting device with a superlattice structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008278867A JP5267931B2 (ja) 2008-10-29 2008-10-29 光陰極半導体素子

Publications (3)

Publication Number Publication Date
JP2010108722A JP2010108722A (ja) 2010-05-13
JP2010108722A5 JP2010108722A5 (enExample) 2011-11-04
JP5267931B2 true JP5267931B2 (ja) 2013-08-21

Family

ID=42130297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008278867A Expired - Fee Related JP5267931B2 (ja) 2008-10-29 2008-10-29 光陰極半導体素子

Country Status (2)

Country Link
US (1) US8143615B2 (enExample)
JP (1) JP5267931B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5808021B2 (ja) * 2013-07-16 2015-11-10 国立大学法人名古屋大学 電子親和力の低下処理装置に用いられる活性化容器及びキット、該キットを含む電子親和力の低下処理装置、フォトカソード電子ビーム源、並びに、フォトカソード電子ビーム源を含む電子銃、自由電子レーザー加速器、透過型電子顕微鏡、走査型電子顕微鏡、電子線ホログラフィー顕微鏡、電子線描画装置、電子線回折装置及び電子線検査装置
US10692683B2 (en) 2017-09-12 2020-06-23 Intevac, Inc. Thermally assisted negative electron affinity photocathode
CN111192914B (zh) * 2017-10-18 2023-10-31 汉阳大学校产学协力团 层、多级元件、多级元件制造方法和驱动多级元件的方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2612572B2 (ja) * 1987-04-14 1997-05-21 キヤノン株式会社 電子放出素子
US5563423A (en) * 1991-08-15 1996-10-08 Hughes Aircraft Company Dark current-free multiquantum well superlattice infrared detector
US5296720A (en) * 1991-11-17 1994-03-22 Hughes Aircraft Company Apparatus and method for discriminating against undesired radiation in a multiple quantum well long wavelength infrared detector
JP3154569B2 (ja) 1992-09-25 2001-04-09 克巳 岸野 偏極電子線発生素子
JPH06115221A (ja) 1992-10-05 1994-04-26 Konica Corp プリンタ
US5877510A (en) * 1994-05-27 1999-03-02 Nec Corporation Spin polarized electron semiconductor source and apparatus utilizing the same
US5510627A (en) * 1994-06-29 1996-04-23 The United States Of America As Represented By The Secretary Of The Navy Infrared-to-visible converter
JPH08222164A (ja) * 1995-02-14 1996-08-30 Daido Steel Co Ltd 低速電子線源
US6130466A (en) * 1995-10-17 2000-10-10 Fraunhofer Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Semiconductor heterostructure radiation detector having two spectral sensitivity ranges
US7286585B2 (en) * 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US6875975B2 (en) * 1999-12-24 2005-04-05 Bae Systems Information And Electronic Systems Integration Inc Multi-color, multi-focal plane optical detector
US7253432B2 (en) * 2000-10-16 2007-08-07 Georgia State University Research Foundation, Inc. Heterojunction far infrared photodetector
JP2003142783A (ja) * 2001-11-08 2003-05-16 Hitachi Ltd 半導体レーザおよびそれを用いた光モジュール
US7205563B2 (en) * 2004-03-18 2007-04-17 Bae Systems Information And Electronic Systems Integration Inc. QWIP with electron launcher for reducing dielectric relaxation effect in low background conditions
US7838869B2 (en) * 2005-10-21 2010-11-23 Georgia State University Research Foundation, Inc. Dual band photodetector
JP2007258119A (ja) * 2006-03-24 2007-10-04 Univ Nagoya スピン偏極電子発生装置
US7381966B2 (en) * 2006-04-13 2008-06-03 Integrated Micro Sensors, Inc. Single-chip monolithic dual-band visible- or solar-blind photodetector

Also Published As

Publication number Publication date
JP2010108722A (ja) 2010-05-13
US8143615B2 (en) 2012-03-27
US20100108983A1 (en) 2010-05-06

Similar Documents

Publication Publication Date Title
JP5641667B2 (ja) 量子カスケードレーザ
JP5527680B2 (ja) スピン偏極電子発生素子
JP6137195B2 (ja) 赤外線検出器
JP2004320038A (ja) 量子井戸の有効キャリヤ捕獲断面積を増大させるための要素を有する発光素子
US5528051A (en) Quantum well infrared detector
EP4407699A1 (en) Ultraviolet light emitting diode and electric device provided with same
JP5267931B2 (ja) 光陰極半導体素子
JP2004507903A (ja) 量子カスケードレーザー
JP5575253B2 (ja) 調整可能な量子光源
JP2014534648A (ja) 階段状井戸活性領域を有する量子カスケードレーザ構造
JPWO2006075759A1 (ja) 広い光スペクトル発光特性を有する半導体光素子及びその製造方法並びにそれを用いる外部共振器型半導体レーザ
WO2022255361A1 (ja) 量子カスケードレーザー素子
JP2006303147A5 (enExample)
JP6030971B2 (ja) 受光素子および受光素子を備えた太陽電池
JP5202944B2 (ja) 発光素子の最大変調速度を改善する方法及び最大変調速度の改善された発光素子、並びにその量子井戸構造
JP2013058580A (ja) 量子型赤外線検出器
JP2012255714A (ja) 赤外線検出器及びその製造方法
JP2010108722A5 (enExample)
Zhu et al. Two-photon photocurrent spectra of InAs quantum dot-in-well intermediated-band solar cells at room temperature
JP6398408B2 (ja) 赤外線検出素子
JPH07320633A (ja) 半導体スピン偏極電子源
WO2010082405A1 (ja) 量子カスケードレーザ
JP4829809B2 (ja) 量子井戸型赤外線検出器
WO2014038211A1 (ja) 半導体装置及び半導体装置の製造方法
CN119560887B (zh) 带间级联激光器外延结构及带间级联激光器

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110914

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110927

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120822

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120828

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121025

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130423

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130425

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees