JP5641667B2 - 量子カスケードレーザ - Google Patents
量子カスケードレーザ Download PDFInfo
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- JP5641667B2 JP5641667B2 JP2007009519A JP2007009519A JP5641667B2 JP 5641667 B2 JP5641667 B2 JP 5641667B2 JP 2007009519 A JP2007009519 A JP 2007009519A JP 2007009519 A JP2007009519 A JP 2007009519A JP 5641667 B2 JP5641667 B2 JP 5641667B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
- H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
- H01S5/309—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure
Description
Claims (1)
- 半導体基板と、
前記半導体基板上に設けられ、量子井戸発光層及び注入層からなる単位積層体が多段に積層されることで前記量子井戸発光層と前記注入層とが交互に積層されたカスケード構造が形成された活性層とを備え、
前記活性層に含まれる複数の前記単位積層体のそれぞれは、そのサブバンド準位構造において、発光上準位と、発光下準位と、前記発光下準位よりも低い複数のエネルギー準位からなり緩和準位として機能する緩和ミニバンドとを有し、
前記発光下準位と前記緩和ミニバントとは、その間のエネルギー差が縦光学フォノンのエネルギーに対応するように構成され、
前記緩和ミニバンドは、前記量子井戸発光層でのミニバンドと、前記注入層でのミニバンドとが結合したバンド構造を有し、
前記量子井戸発光層における前記発光上準位から前記発光下準位への電子のサブバンド間遷移によって光が生成されるとともに、前記サブバンド間遷移を経た電子は、縦光学フォノン散乱による前記発光下準位から前記緩和ミニバンドへの緩和、及び前記緩和ミニバンド内での緩和を介して、前記注入層から後段の前記単位積層体の前記量子井戸発光層へと注入され、
前記単位積層体において、前記量子井戸発光層と、前記注入層との間に、前記注入層の1段目の量子障壁層として、前記量子井戸発光層から前記注入層への電子に対する抽出障壁層が設けられているとともに、前段の前記注入層と、前記量子井戸発光層との間に、前記量子井戸発光層の1段目の量子障壁層として、前段の前記注入層から前記量子井戸発光層への電子に対する注入障壁層が設けられており、
前記抽出障壁層は、その厚さが、前記注入層における前記抽出障壁層を除く最も前記量子井戸発光層側の障壁層の厚さよりも厚く、かつ、前記注入障壁層の厚さよりも薄く、
前記発光下準位は、前記緩和ミニバンドにおける一のサブバンドを他のサブバンドから縦光学フォノンのエネルギー分だけ高エネルギー側に分離させた準位からなることを特徴とする量子カスケードレーザ。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007009519A JP5641667B2 (ja) | 2007-01-18 | 2007-01-18 | 量子カスケードレーザ |
EP07744803.3A EP2128940B1 (en) | 2007-01-18 | 2007-06-06 | Quantum cascade laser |
US12/523,277 US8068528B2 (en) | 2007-01-18 | 2007-06-06 | Quantum cascade laser |
PCT/JP2007/061460 WO2008087754A1 (ja) | 2007-01-18 | 2007-06-06 | 量子カスケードレーザ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007009519A JP5641667B2 (ja) | 2007-01-18 | 2007-01-18 | 量子カスケードレーザ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008177366A JP2008177366A (ja) | 2008-07-31 |
JP5641667B2 true JP5641667B2 (ja) | 2014-12-17 |
Family
ID=39635763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007009519A Active JP5641667B2 (ja) | 2007-01-18 | 2007-01-18 | 量子カスケードレーザ |
Country Status (4)
Country | Link |
---|---|
US (1) | US8068528B2 (ja) |
EP (1) | EP2128940B1 (ja) |
JP (1) | JP5641667B2 (ja) |
WO (1) | WO2008087754A1 (ja) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5358807B2 (ja) * | 2008-02-26 | 2013-12-04 | 横河電機株式会社 | マルチホップ無線通信システム |
JP5248881B2 (ja) | 2008-02-28 | 2013-07-31 | 浜松ホトニクス株式会社 | 量子カスケードレーザ |
JP2010165994A (ja) * | 2009-01-19 | 2010-07-29 | Hamamatsu Photonics Kk | 量子カスケードレーザ |
US20120207186A1 (en) * | 2009-02-16 | 2012-08-16 | The Board Of Regents Of The University Of Texas System | Terahertz quantum cascade lasers (qcls) |
JP2010238711A (ja) * | 2009-03-30 | 2010-10-21 | Furukawa Electric Co Ltd:The | 量子カスケードレーザ |
JP5523759B2 (ja) * | 2009-07-31 | 2014-06-18 | 浜松ホトニクス株式会社 | 量子カスケードレーザ |
JP2011035138A (ja) | 2009-07-31 | 2011-02-17 | Hamamatsu Photonics Kk | 半導体発光素子 |
JP5350940B2 (ja) | 2009-08-19 | 2013-11-27 | 浜松ホトニクス株式会社 | レーザモジュール |
JP2011243781A (ja) | 2010-05-19 | 2011-12-01 | Hamamatsu Photonics Kk | 量子カスケードレーザ |
US8325774B2 (en) * | 2010-08-12 | 2012-12-04 | Wisconsin Alumni Research Foundation | High power, high efficiency quantum cascade lasers with reduced electron leakage |
JP5776229B2 (ja) * | 2011-03-07 | 2015-09-09 | 住友電気工業株式会社 | 量子カスケードレーザ |
JP5729138B2 (ja) * | 2011-05-30 | 2015-06-03 | 住友電気工業株式会社 | 光半導体デバイスの製造方法 |
JP5638483B2 (ja) * | 2011-08-03 | 2014-12-10 | 株式会社東芝 | 半導体レーザ装置 |
US9054497B2 (en) * | 2011-09-21 | 2015-06-09 | The Trustees Of Princeton University | Quantum cascade lasers with improved performance using interface roughness scattering |
JP5941655B2 (ja) | 2011-10-28 | 2016-06-29 | 浜松ホトニクス株式会社 | 量子カスケードレーザ |
JP5771120B2 (ja) | 2011-10-28 | 2015-08-26 | 浜松ホトニクス株式会社 | 量子カスケードレーザの製造方法 |
CN102611003B (zh) * | 2012-04-11 | 2014-01-08 | 中国科学院半导体研究所 | 量子点级联激光器 |
US9484715B2 (en) | 2013-05-23 | 2016-11-01 | Hamamatsu Photonics K.K. | Quantum-cascade laser |
JP6244667B2 (ja) * | 2013-05-31 | 2017-12-13 | 住友電気工業株式会社 | 量子カスケードレーザ |
JP6244668B2 (ja) * | 2013-05-31 | 2017-12-13 | 住友電気工業株式会社 | 量子カスケードレーザ |
KR102113256B1 (ko) * | 2013-11-07 | 2020-05-20 | 삼성전자주식회사 | 다준위 에너지를 갖는 3중 연결 양자우물 구조를 포함하는 광학 소자 |
JP6259325B2 (ja) * | 2014-03-12 | 2018-01-10 | 浜松ホトニクス株式会社 | 量子カスケードレーザ |
US9831636B2 (en) | 2014-03-13 | 2017-11-28 | Kabushiki Kaisha Toshiba | Semiconductor laser device |
US10340662B2 (en) * | 2014-06-04 | 2019-07-02 | Sharp Kabushiki Kaisha | Quantum cascade laser |
JP6627309B2 (ja) * | 2014-08-14 | 2020-01-08 | 国立研究開発法人理化学研究所 | 窒化物半導体量子カスケードレーザー |
JP6417199B2 (ja) * | 2014-12-08 | 2018-10-31 | 浜松ホトニクス株式会社 | 量子カスケードレーザ装置 |
JP6371332B2 (ja) * | 2016-05-20 | 2018-08-08 | シャープ株式会社 | 量子カスケードレーザ |
JP7129359B2 (ja) * | 2019-02-27 | 2022-09-01 | 株式会社東芝 | 半導体レーザ用ウェーハおよび半導体レーザ |
Family Cites Families (12)
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US5457709A (en) | 1994-04-04 | 1995-10-10 | At&T Ipm Corp. | Unipolar semiconductor laser |
US5509025A (en) * | 1994-04-04 | 1996-04-16 | At&T Corp. | Unipolar semiconductor laser |
JP3159946B2 (ja) * | 1996-11-06 | 2001-04-23 | ルーセント テクノロジーズ インコーポレイテッド | 量子カスケードレーザを有する物品 |
US5745516A (en) | 1996-11-06 | 1998-04-28 | Lucent Technologies Inc. | Article comprising a unipolar superlattice laser |
US6137817A (en) * | 1998-06-12 | 2000-10-24 | Lucent Technologies Inc. | Quantum cascade laser |
US6055254A (en) * | 1998-09-23 | 2000-04-25 | Lucent Technologies Inc. | Quantum cascade light emitter with pre-biased internal electronic potential |
US6324199B1 (en) * | 1998-11-18 | 2001-11-27 | Lucent Technologies Inc. | Intersubband light source with separate electron injector and reflector/extractor |
EP1195865A1 (fr) | 2000-08-31 | 2002-04-10 | Alpes Lasers SA | Laser à cascades quantiques |
EP1189317A1 (fr) | 2000-09-13 | 2002-03-20 | Alpes Lasers SA | Laser à cascade quantique à excitation par des phonons optiques |
JP2004119814A (ja) * | 2002-09-27 | 2004-04-15 | Matsushita Electric Ind Co Ltd | ユニポーラ多重量子井戸デバイスとその製造方法 |
US7359418B2 (en) * | 2003-02-13 | 2008-04-15 | Hamamatsu Photonics K.K. | Quantum cascade laser |
JP4250573B2 (ja) * | 2004-07-16 | 2009-04-08 | キヤノン株式会社 | 素子 |
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2007
- 2007-01-18 JP JP2007009519A patent/JP5641667B2/ja active Active
- 2007-06-06 WO PCT/JP2007/061460 patent/WO2008087754A1/ja active Application Filing
- 2007-06-06 EP EP07744803.3A patent/EP2128940B1/en active Active
- 2007-06-06 US US12/523,277 patent/US8068528B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2008177366A (ja) | 2008-07-31 |
WO2008087754A1 (ja) | 2008-07-24 |
EP2128940B1 (en) | 2015-08-26 |
EP2128940A1 (en) | 2009-12-02 |
EP2128940A4 (en) | 2014-08-27 |
US20100111127A1 (en) | 2010-05-06 |
US8068528B2 (en) | 2011-11-29 |
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