KR101352654B1 - 에너지 펜스 장벽내에 매립된 양자점들을 갖는 중간 대역 감광 장치 - Google Patents

에너지 펜스 장벽내에 매립된 양자점들을 갖는 중간 대역 감광 장치 Download PDF

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KR101352654B1
KR101352654B1 KR1020097011006A KR20097011006A KR101352654B1 KR 101352654 B1 KR101352654 B1 KR 101352654B1 KR 1020097011006 A KR1020097011006 A KR 1020097011006A KR 20097011006 A KR20097011006 A KR 20097011006A KR 101352654 B1 KR101352654 B1 KR 101352654B1
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quantum
barrier
quantum dots
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KR20090089347A (ko
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스티븐 알 포레스트
궈단 웨이
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더 리젠츠 오브 더 유니버시티 오브 미시간
더 트러스티즈 오브 프린스턴 유니버시티
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
KR1020097011006A 2006-11-13 2007-11-06 에너지 펜스 장벽내에 매립된 양자점들을 갖는 중간 대역 감광 장치 Expired - Fee Related KR101352654B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/598,006 2006-11-13
US11/598,006 US7750425B2 (en) 2005-12-16 2006-11-13 Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier
PCT/US2007/023447 WO2008147392A2 (en) 2006-11-13 2007-11-06 Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

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KR20090089347A KR20090089347A (ko) 2009-08-21
KR101352654B1 true KR101352654B1 (ko) 2014-01-17

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US (1) US7750425B2 (enExample)
EP (1) EP2084755B1 (enExample)
JP (2) JP5513891B2 (enExample)
KR (1) KR101352654B1 (enExample)
CN (1) CN101622718B (enExample)
TW (1) TWI427803B (enExample)
WO (1) WO2008147392A2 (enExample)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100477289C (zh) * 2004-01-20 2009-04-08 瑟雷姆技术公司 具有外延生长量子点材料的太阳能电池
US9018515B2 (en) * 2004-01-20 2015-04-28 Cyrium Technologies Incorporated Solar cell with epitaxially grown quantum dot material
WO2008033388A2 (en) * 2006-09-12 2008-03-20 Qd Vision, Inc. A composite including nanoparticles, methods, and products including a composite
US8030664B2 (en) * 2006-12-15 2011-10-04 Samsung Led Co., Ltd. Light emitting device
US7968792B2 (en) * 2007-03-05 2011-06-28 Seagate Technology Llc Quantum dot sensitized wide bandgap semiconductor photovoltaic devices & methods of fabricating same
WO2009014707A2 (en) 2007-07-23 2009-01-29 Qd Vision, Inc. Quantum dot light enhancement substrate and lighting device including same
US7915521B2 (en) * 2007-10-10 2011-03-29 The Trustees Of Princeton University Type II quantum dot solar cells
TWI452703B (zh) * 2007-11-16 2014-09-11 半導體能源研究所股份有限公司 光電轉換裝置及其製造方法
EP2075850A3 (en) * 2007-12-28 2011-08-24 Semiconductor Energy Laboratory Co, Ltd. Photoelectric conversion device and manufacturing method thereof
US9207385B2 (en) 2008-05-06 2015-12-08 Qd Vision, Inc. Lighting systems and devices including same
WO2009137053A1 (en) 2008-05-06 2009-11-12 Qd Vision, Inc. Optical components, systems including an optical component, and devices
EP2297762B1 (en) 2008-05-06 2017-03-15 Samsung Electronics Co., Ltd. Solid state lighting devices including quantum confined semiconductor nanoparticles
JP2009065142A (ja) * 2008-08-08 2009-03-26 Technical Research & Development Institute Ministry Of Defence 量子ドット型赤外線検知器
TWI382551B (zh) * 2008-11-06 2013-01-11 Ind Tech Res Inst 太陽能集光模組
JP5035472B2 (ja) * 2009-07-06 2012-09-26 トヨタ自動車株式会社 光電変換素子
US8933526B2 (en) * 2009-07-15 2015-01-13 First Solar, Inc. Nanostructured functional coatings and devices
JP5529963B2 (ja) * 2009-07-20 2014-06-25 ソイテック 半導体構造体または半導体デバイスを形成する方法および光起電力構造体
WO2011010379A1 (ja) * 2009-07-23 2011-01-27 トヨタ自動車株式会社 光電変換素子
WO2011016537A1 (ja) * 2009-08-06 2011-02-10 国立大学法人千葉大学 光電変換装置
EP2465147B1 (en) 2009-08-14 2019-02-27 Samsung Electronics Co., Ltd. Lighting devices, an optical component for a lighting device, and methods
GB0917747D0 (en) * 2009-10-09 2009-11-25 Univ Glasgow Intermediate band semiconductor photovoltaic devices, uses thereof and methods for their manufacture
JP5582638B2 (ja) * 2010-02-25 2014-09-03 独立行政法人産業技術総合研究所 太陽電池
GB2480265B (en) * 2010-05-10 2013-10-02 Toshiba Res Europ Ltd A semiconductor device and a method of fabricating a semiconductor device
US9178108B2 (en) * 2010-05-24 2015-11-03 Lg Innotek Co., Ltd. Light emitting device and light emitting device package
JP2011249579A (ja) * 2010-05-27 2011-12-08 Fujifilm Corp 太陽電池およびその製造方法
WO2011158934A1 (ja) * 2010-06-18 2011-12-22 国立大学法人千葉大学 光電変換装置
JP5753445B2 (ja) 2010-06-18 2015-07-22 株式会社半導体エネルギー研究所 光電変換装置
JP5573448B2 (ja) * 2010-07-16 2014-08-20 富士通株式会社 量子ドット型赤外線検出器の製造方法
US8164092B2 (en) * 2010-10-18 2012-04-24 The University Of Utah Research Foundation PIN structures including intrinsic gallium arsenide, devices incorporating the same, and related methods
JP5256268B2 (ja) * 2010-10-21 2013-08-07 シャープ株式会社 太陽電池
JP5672983B2 (ja) * 2010-11-04 2015-02-18 富士通株式会社 発光半導体素子及びその製造方法
US8331142B2 (en) * 2010-12-16 2012-12-11 Technische Universitat Berlin Memory
US9955148B2 (en) 2011-01-17 2018-04-24 3D Labs Co., Ltd. Method and system for reproducing and watching a video
KR101189686B1 (ko) * 2011-03-22 2012-10-10 한국표준과학연구원 실리콘 양자점에 의한 광활성층 및 이의 제조방법
EP2523218A2 (en) * 2011-05-09 2012-11-14 Sharp Kabushiki Kaisha Solar Cell
JP5341949B2 (ja) * 2011-05-24 2013-11-13 シャープ株式会社 太陽電池
US20140116502A1 (en) * 2011-06-13 2014-05-01 Tohoku University Quantum nanodots, two-dimensional quantum nanodot array as well as semiconductor device using the same and production method therefor
WO2013055429A2 (en) * 2011-07-28 2013-04-18 The Research Foundation Of State University Of New York Quantum dot structures for efficient photovoltaic conversion, and methods of using and making the same
JP5607589B2 (ja) * 2011-08-26 2014-10-15 トヨタ自動車株式会社 量子ドット配列材料並びにこれを用いた光電変換素子及び波長変換素子
JP2013058562A (ja) 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置
JP5946010B2 (ja) * 2011-09-16 2016-07-05 株式会社豊田中央研究所 量子ドット太陽電池およびその製造方法
WO2013089872A2 (en) * 2011-09-22 2013-06-20 Rosestreet Labs, Llc Band structure engineering for improved efficiency of cdte based photovoltaics
WO2013058051A1 (ja) * 2011-10-20 2013-04-25 国立大学法人東京大学 太陽電池
CN102436532A (zh) * 2011-11-28 2012-05-02 华北电力大学 InAs/GaSb超晶格电子结构的设计方法
US9954129B2 (en) * 2012-05-30 2018-04-24 University Of Delaware Systems for efficient photon upconversion
JP6055619B2 (ja) * 2012-07-17 2016-12-27 シャープ株式会社 太陽電池
WO2014100707A1 (en) * 2012-12-20 2014-06-26 The Trustees Of Boston College Methods and systems for controlling phonon-scattering
SG2013096607A (en) 2012-12-27 2014-07-30 Agency Science Tech & Res Vertical light emitting diode with photonic nanostructures and method of fabrication thereof
US9240507B2 (en) 2014-01-28 2016-01-19 Sharp Kabushiki Kaisha Intermediate band solar cell using type I and type II quantum dot superlattices
US9619754B2 (en) * 2014-08-13 2017-04-11 The United States Of America, As Represented By The Secretary Of The Navy Single photon source based on a quantum dot molecule in an optical cavity
GB201420860D0 (en) * 2014-11-24 2015-01-07 Infiniled Ltd Micro-LED device
CN104916715B (zh) * 2015-05-25 2017-09-26 中国电子科技集团公司第十八研究所 一种量子点五结太阳能电池的制备方法
JP6471120B2 (ja) 2016-06-27 2019-02-13 シャープ株式会社 光電変換素子およびそれを備えた光電変換装置
US10428100B2 (en) 2017-01-13 2019-10-01 Uchicago Argonne, Llc Substituted lead halide perovskite intermediate band absorbers
JP2018190935A (ja) * 2017-05-11 2018-11-29 シャープ株式会社 量子ドット型赤外線検出器
DE102021107136A1 (de) * 2021-03-23 2022-09-29 Otto-von-Guericke-Universität Magdeburg, Körperschaft des öffentlichen Rechts Optoelektronisches Zugangssystem und Verfahren zur Herstellung eines nicht-duplizierbaren Schlüssels
JP7730766B2 (ja) * 2022-01-08 2025-08-28 勇 城之下 光吸収材料、太陽電池、および光吸収材料の製造方法
US11784805B2 (en) 2022-03-07 2023-10-10 Raytheon Company Ultra high entropy material-based non-reversible spectral signature generation via quantum dots

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6239449B1 (en) 1998-05-05 2001-05-29 National Research Council Of Canada Quantum dot infrared photodetectors (QDIP)
US20020094597A1 (en) 2001-01-15 2002-07-18 National Science Council Quantum dot infrared photodetector and method for fabricating the same
US20020092987A1 (en) 1998-09-05 2002-07-18 Taehee Cho Photo detect device using quantum dots and materialization method thereof
US20030073258A1 (en) 1998-12-25 2003-04-17 Fujitsu Limited Semiconductor device and method of manufacturing the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5079601A (en) 1989-12-20 1992-01-07 International Business Machines Corporation Optoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctions
ES2149137B1 (es) * 1999-06-09 2001-11-16 Univ Madrid Politecnica Celula solar fotovoltaica de semiconductor de banda intermedia.
US6380604B1 (en) 2000-05-18 2002-04-30 Fujitsu Limited Quantum semiconductor device having quantum dots and optical detectors using the same
US6583436B2 (en) 2000-06-27 2003-06-24 The Regents Of The University Of California Strain-engineered, self-assembled, semiconductor quantum dot lattices
JP3753605B2 (ja) * 2000-11-01 2006-03-08 シャープ株式会社 太陽電池およびその製造方法
WO2002082602A2 (en) 2001-02-28 2002-10-17 The Research Foundation Of State University Of New York Semiconductor laser with reduced temperature sensitivity
US6773949B2 (en) 2001-07-31 2004-08-10 The Board Of Trustees Of The University Of Illinois Semiconductor devices and methods
US6753273B2 (en) 2001-07-31 2004-06-22 The Board Of Trustees Of The University Of Illinois Semiconductor devices and methods
JP4583726B2 (ja) * 2003-05-23 2010-11-17 富士通株式会社 量子半導体装置およびその作製方法
CN100477289C (zh) * 2004-01-20 2009-04-08 瑟雷姆技术公司 具有外延生长量子点材料的太阳能电池
JP4905623B2 (ja) * 2004-10-18 2012-03-28 富士通株式会社 太陽電池
ES2297972A1 (es) * 2005-05-30 2008-05-01 Universidad Politecnica De Madrid Fotodetector de infrarrojos de banda intermedia y puntos cuanticos.

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6239449B1 (en) 1998-05-05 2001-05-29 National Research Council Of Canada Quantum dot infrared photodetectors (QDIP)
US20020092987A1 (en) 1998-09-05 2002-07-18 Taehee Cho Photo detect device using quantum dots and materialization method thereof
US20030073258A1 (en) 1998-12-25 2003-04-17 Fujitsu Limited Semiconductor device and method of manufacturing the same
US20020094597A1 (en) 2001-01-15 2002-07-18 National Science Council Quantum dot infrared photodetector and method for fabricating the same

Also Published As

Publication number Publication date
CN101622718B (zh) 2012-04-25
TW200840062A (en) 2008-10-01
CN101622718A (zh) 2010-01-06
EP2084755A2 (en) 2009-08-05
EP2084755B1 (en) 2013-10-09
TWI427803B (zh) 2014-02-21
JP2014013927A (ja) 2014-01-23
WO2008147392A2 (en) 2008-12-04
WO2008147392A3 (en) 2009-05-14
US20070151592A1 (en) 2007-07-05
JP2010509772A (ja) 2010-03-25
JP5584339B2 (ja) 2014-09-03
KR20090089347A (ko) 2009-08-21
US7750425B2 (en) 2010-07-06
JP5513891B2 (ja) 2014-06-04

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