TWI427803B - 具有量子點嵌於能量屏障中之中段光感裝置 - Google Patents

具有量子點嵌於能量屏障中之中段光感裝置 Download PDF

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Publication number
TWI427803B
TWI427803B TW096142721A TW96142721A TWI427803B TW I427803 B TWI427803 B TW I427803B TW 096142721 A TW096142721 A TW 096142721A TW 96142721 A TW96142721 A TW 96142721A TW I427803 B TWI427803 B TW I427803B
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TW
Taiwan
Prior art keywords
barrier
quantum
layer
semiconductor material
layers
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TW096142721A
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English (en)
Chinese (zh)
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TW200840062A (en
Inventor
Stephen R Forrest
Guodan Wei
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Univ Princeton
Univ Michigan
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Publication of TW200840062A publication Critical patent/TW200840062A/zh
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Publication of TWI427803B publication Critical patent/TWI427803B/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
TW096142721A 2006-11-13 2007-11-12 具有量子點嵌於能量屏障中之中段光感裝置 TWI427803B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/598,006 US7750425B2 (en) 2005-12-16 2006-11-13 Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

Publications (2)

Publication Number Publication Date
TW200840062A TW200840062A (en) 2008-10-01
TWI427803B true TWI427803B (zh) 2014-02-21

Family

ID=40076755

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096142721A TWI427803B (zh) 2006-11-13 2007-11-12 具有量子點嵌於能量屏障中之中段光感裝置

Country Status (7)

Country Link
US (1) US7750425B2 (enExample)
EP (1) EP2084755B1 (enExample)
JP (2) JP5513891B2 (enExample)
KR (1) KR101352654B1 (enExample)
CN (1) CN101622718B (enExample)
TW (1) TWI427803B (enExample)
WO (1) WO2008147392A2 (enExample)

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WO2009014707A2 (en) * 2007-07-23 2009-01-29 Qd Vision, Inc. Quantum dot light enhancement substrate and lighting device including same
US7915521B2 (en) * 2007-10-10 2011-03-29 The Trustees Of Princeton University Type II quantum dot solar cells
TWI452703B (zh) * 2007-11-16 2014-09-11 半導體能源研究所股份有限公司 光電轉換裝置及其製造方法
EP2075850A3 (en) * 2007-12-28 2011-08-24 Semiconductor Energy Laboratory Co, Ltd. Photoelectric conversion device and manufacturing method thereof
US9207385B2 (en) 2008-05-06 2015-12-08 Qd Vision, Inc. Lighting systems and devices including same
WO2009137053A1 (en) 2008-05-06 2009-11-12 Qd Vision, Inc. Optical components, systems including an optical component, and devices
JP2011524064A (ja) 2008-05-06 2011-08-25 キユーデイー・ビジヨン・インコーポレーテツド 量子閉じ込め半導体ナノ粒子を含有する固体照明装置
JP2009065142A (ja) * 2008-08-08 2009-03-26 Technical Research & Development Institute Ministry Of Defence 量子ドット型赤外線検知器
TWI382551B (zh) * 2008-11-06 2013-01-11 Ind Tech Res Inst 太陽能集光模組
US20120097225A1 (en) * 2009-07-06 2012-04-26 Hidefumi Nomura Photoelectric conversion device
US8933526B2 (en) * 2009-07-15 2015-01-13 First Solar, Inc. Nanostructured functional coatings and devices
WO2011011111A1 (en) * 2009-07-20 2011-01-27 S.O.I.Tec Silicon On Insulator Technologies Methods of fabricating semiconductor structures and devices using quantum dot structures and related structures
CN102473746B (zh) * 2009-07-23 2015-10-21 丰田自动车株式会社 光电转换元件
JP5424502B2 (ja) * 2009-08-06 2014-02-26 国立大学法人 千葉大学 光電変換装置
WO2011020098A1 (en) 2009-08-14 2011-02-17 Qd Vision, Inc. Lighting devices, an optical component for a lighting device, and methods
GB0917747D0 (en) * 2009-10-09 2009-11-25 Univ Glasgow Intermediate band semiconductor photovoltaic devices, uses thereof and methods for their manufacture
JP5582638B2 (ja) * 2010-02-25 2014-09-03 独立行政法人産業技術総合研究所 太陽電池
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US9178108B2 (en) * 2010-05-24 2015-11-03 Lg Innotek Co., Ltd. Light emitting device and light emitting device package
JP2011249579A (ja) * 2010-05-27 2011-12-08 Fujifilm Corp 太陽電池およびその製造方法
JP5935217B2 (ja) * 2010-06-18 2016-06-15 国立大学法人 千葉大学 光電変換装置
JP5753445B2 (ja) 2010-06-18 2015-07-22 株式会社半導体エネルギー研究所 光電変換装置
JP5573448B2 (ja) * 2010-07-16 2014-08-20 富士通株式会社 量子ドット型赤外線検出器の製造方法
US8164092B2 (en) * 2010-10-18 2012-04-24 The University Of Utah Research Foundation PIN structures including intrinsic gallium arsenide, devices incorporating the same, and related methods
JP5256268B2 (ja) * 2010-10-21 2013-08-07 シャープ株式会社 太陽電池
JP5672983B2 (ja) * 2010-11-04 2015-02-18 富士通株式会社 発光半導体素子及びその製造方法
US8331142B2 (en) * 2010-12-16 2012-12-11 Technische Universitat Berlin Memory
US9955148B2 (en) 2011-01-17 2018-04-24 3D Labs Co., Ltd. Method and system for reproducing and watching a video
KR101189686B1 (ko) * 2011-03-22 2012-10-10 한국표준과학연구원 실리콘 양자점에 의한 광활성층 및 이의 제조방법
JP5341949B2 (ja) * 2011-05-24 2013-11-13 シャープ株式会社 太陽電池
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WO2013055429A2 (en) * 2011-07-28 2013-04-18 The Research Foundation Of State University Of New York Quantum dot structures for efficient photovoltaic conversion, and methods of using and making the same
JP5607589B2 (ja) * 2011-08-26 2014-10-15 トヨタ自動車株式会社 量子ドット配列材料並びにこれを用いた光電変換素子及び波長変換素子
JP2013058562A (ja) 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置
JP5946010B2 (ja) * 2011-09-16 2016-07-05 株式会社豊田中央研究所 量子ドット太陽電池およびその製造方法
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CN102436532A (zh) * 2011-11-28 2012-05-02 华北电力大学 InAs/GaSb超晶格电子结构的设计方法
US9954129B2 (en) * 2012-05-30 2018-04-24 University Of Delaware Systems for efficient photon upconversion
JP6055619B2 (ja) * 2012-07-17 2016-12-27 シャープ株式会社 太陽電池
WO2014100707A1 (en) * 2012-12-20 2014-06-26 The Trustees Of Boston College Methods and systems for controlling phonon-scattering
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US9240507B2 (en) 2014-01-28 2016-01-19 Sharp Kabushiki Kaisha Intermediate band solar cell using type I and type II quantum dot superlattices
US9619754B2 (en) * 2014-08-13 2017-04-11 The United States Of America, As Represented By The Secretary Of The Navy Single photon source based on a quantum dot molecule in an optical cavity
GB201420860D0 (en) * 2014-11-24 2015-01-07 Infiniled Ltd Micro-LED device
CN104916715B (zh) * 2015-05-25 2017-09-26 中国电子科技集团公司第十八研究所 一种量子点五结太阳能电池的制备方法
JP6471120B2 (ja) 2016-06-27 2019-02-13 シャープ株式会社 光電変換素子およびそれを備えた光電変換装置
US10428100B2 (en) 2017-01-13 2019-10-01 Uchicago Argonne, Llc Substituted lead halide perovskite intermediate band absorbers
JP2018190935A (ja) * 2017-05-11 2018-11-29 シャープ株式会社 量子ドット型赤外線検出器
DE102021107136A1 (de) * 2021-03-23 2022-09-29 Otto-von-Guericke-Universität Magdeburg, Körperschaft des öffentlichen Rechts Optoelektronisches Zugangssystem und Verfahren zur Herstellung eines nicht-duplizierbaren Schlüssels
JP7730766B2 (ja) * 2022-01-08 2025-08-28 勇 城之下 光吸収材料、太陽電池、および光吸収材料の製造方法
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US20020092987A1 (en) * 1998-09-05 2002-07-18 Taehee Cho Photo detect device using quantum dots and materialization method thereof
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Also Published As

Publication number Publication date
EP2084755A2 (en) 2009-08-05
CN101622718A (zh) 2010-01-06
WO2008147392A3 (en) 2009-05-14
EP2084755B1 (en) 2013-10-09
TW200840062A (en) 2008-10-01
JP5513891B2 (ja) 2014-06-04
JP5584339B2 (ja) 2014-09-03
US20070151592A1 (en) 2007-07-05
JP2010509772A (ja) 2010-03-25
CN101622718B (zh) 2012-04-25
KR101352654B1 (ko) 2014-01-17
KR20090089347A (ko) 2009-08-21
JP2014013927A (ja) 2014-01-23
WO2008147392A2 (en) 2008-12-04
US7750425B2 (en) 2010-07-06

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