CN101622718B - 具有嵌入在能量围栏势垒中的量子点的中间带光敏器件 - Google Patents

具有嵌入在能量围栏势垒中的量子点的中间带光敏器件 Download PDF

Info

Publication number
CN101622718B
CN101622718B CN2007800421456A CN200780042145A CN101622718B CN 101622718 B CN101622718 B CN 101622718B CN 2007800421456 A CN2007800421456 A CN 2007800421456A CN 200780042145 A CN200780042145 A CN 200780042145A CN 101622718 B CN101622718 B CN 101622718B
Authority
CN
China
Prior art keywords
quantum
barrier
layer
layers
semiconductor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2007800421456A
Other languages
English (en)
Chinese (zh)
Other versions
CN101622718A (zh
Inventor
史蒂芬·R·福里斯特
韦国丹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Michigan System
Princeton University
Original Assignee
University of Michigan System
Princeton University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Michigan System, Princeton University filed Critical University of Michigan System
Publication of CN101622718A publication Critical patent/CN101622718A/zh
Application granted granted Critical
Publication of CN101622718B publication Critical patent/CN101622718B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
CN2007800421456A 2006-11-13 2007-11-06 具有嵌入在能量围栏势垒中的量子点的中间带光敏器件 Expired - Fee Related CN101622718B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/598,006 2006-11-13
US11/598,006 US7750425B2 (en) 2005-12-16 2006-11-13 Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier
PCT/US2007/023447 WO2008147392A2 (en) 2006-11-13 2007-11-06 Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

Publications (2)

Publication Number Publication Date
CN101622718A CN101622718A (zh) 2010-01-06
CN101622718B true CN101622718B (zh) 2012-04-25

Family

ID=40076755

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2007800421456A Expired - Fee Related CN101622718B (zh) 2006-11-13 2007-11-06 具有嵌入在能量围栏势垒中的量子点的中间带光敏器件

Country Status (7)

Country Link
US (1) US7750425B2 (enExample)
EP (1) EP2084755B1 (enExample)
JP (2) JP5513891B2 (enExample)
KR (1) KR101352654B1 (enExample)
CN (1) CN101622718B (enExample)
TW (1) TWI427803B (enExample)
WO (1) WO2008147392A2 (enExample)

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2551123A1 (en) * 2004-01-20 2005-07-28 Cyrium Technologies Incorporated Solar cell with epitaxially grown quantum dot material
US9018515B2 (en) * 2004-01-20 2015-04-28 Cyrium Technologies Incorporated Solar cell with epitaxially grown quantum dot material
WO2008033388A2 (en) * 2006-09-12 2008-03-20 Qd Vision, Inc. A composite including nanoparticles, methods, and products including a composite
US8030664B2 (en) * 2006-12-15 2011-10-04 Samsung Led Co., Ltd. Light emitting device
US7968792B2 (en) * 2007-03-05 2011-06-28 Seagate Technology Llc Quantum dot sensitized wide bandgap semiconductor photovoltaic devices & methods of fabricating same
WO2009014707A2 (en) * 2007-07-23 2009-01-29 Qd Vision, Inc. Quantum dot light enhancement substrate and lighting device including same
US7915521B2 (en) * 2007-10-10 2011-03-29 The Trustees Of Princeton University Type II quantum dot solar cells
TWI452703B (zh) * 2007-11-16 2014-09-11 半導體能源研究所股份有限公司 光電轉換裝置及其製造方法
EP2075850A3 (en) * 2007-12-28 2011-08-24 Semiconductor Energy Laboratory Co, Ltd. Photoelectric conversion device and manufacturing method thereof
US9207385B2 (en) 2008-05-06 2015-12-08 Qd Vision, Inc. Lighting systems and devices including same
WO2009137053A1 (en) 2008-05-06 2009-11-12 Qd Vision, Inc. Optical components, systems including an optical component, and devices
JP2011524064A (ja) 2008-05-06 2011-08-25 キユーデイー・ビジヨン・インコーポレーテツド 量子閉じ込め半導体ナノ粒子を含有する固体照明装置
JP2009065142A (ja) * 2008-08-08 2009-03-26 Technical Research & Development Institute Ministry Of Defence 量子ドット型赤外線検知器
TWI382551B (zh) * 2008-11-06 2013-01-11 Ind Tech Res Inst 太陽能集光模組
US20120097225A1 (en) * 2009-07-06 2012-04-26 Hidefumi Nomura Photoelectric conversion device
US8933526B2 (en) * 2009-07-15 2015-01-13 First Solar, Inc. Nanostructured functional coatings and devices
WO2011011111A1 (en) * 2009-07-20 2011-01-27 S.O.I.Tec Silicon On Insulator Technologies Methods of fabricating semiconductor structures and devices using quantum dot structures and related structures
CN102473746B (zh) * 2009-07-23 2015-10-21 丰田自动车株式会社 光电转换元件
JP5424502B2 (ja) * 2009-08-06 2014-02-26 国立大学法人 千葉大学 光電変換装置
WO2011020098A1 (en) 2009-08-14 2011-02-17 Qd Vision, Inc. Lighting devices, an optical component for a lighting device, and methods
GB0917747D0 (en) * 2009-10-09 2009-11-25 Univ Glasgow Intermediate band semiconductor photovoltaic devices, uses thereof and methods for their manufacture
JP5582638B2 (ja) * 2010-02-25 2014-09-03 独立行政法人産業技術総合研究所 太陽電池
GB2480265B (en) * 2010-05-10 2013-10-02 Toshiba Res Europ Ltd A semiconductor device and a method of fabricating a semiconductor device
US9178108B2 (en) * 2010-05-24 2015-11-03 Lg Innotek Co., Ltd. Light emitting device and light emitting device package
JP2011249579A (ja) * 2010-05-27 2011-12-08 Fujifilm Corp 太陽電池およびその製造方法
JP5935217B2 (ja) * 2010-06-18 2016-06-15 国立大学法人 千葉大学 光電変換装置
JP5753445B2 (ja) 2010-06-18 2015-07-22 株式会社半導体エネルギー研究所 光電変換装置
JP5573448B2 (ja) * 2010-07-16 2014-08-20 富士通株式会社 量子ドット型赤外線検出器の製造方法
US8164092B2 (en) * 2010-10-18 2012-04-24 The University Of Utah Research Foundation PIN structures including intrinsic gallium arsenide, devices incorporating the same, and related methods
JP5256268B2 (ja) * 2010-10-21 2013-08-07 シャープ株式会社 太陽電池
JP5672983B2 (ja) * 2010-11-04 2015-02-18 富士通株式会社 発光半導体素子及びその製造方法
US8331142B2 (en) * 2010-12-16 2012-12-11 Technische Universitat Berlin Memory
US9955148B2 (en) 2011-01-17 2018-04-24 3D Labs Co., Ltd. Method and system for reproducing and watching a video
KR101189686B1 (ko) * 2011-03-22 2012-10-10 한국표준과학연구원 실리콘 양자점에 의한 광활성층 및 이의 제조방법
JP5341949B2 (ja) * 2011-05-24 2013-11-13 シャープ株式会社 太陽電池
EP2523218A2 (en) 2011-05-09 2012-11-14 Sharp Kabushiki Kaisha Solar Cell
US20140116502A1 (en) * 2011-06-13 2014-05-01 Tohoku University Quantum nanodots, two-dimensional quantum nanodot array as well as semiconductor device using the same and production method therefor
WO2013055429A2 (en) * 2011-07-28 2013-04-18 The Research Foundation Of State University Of New York Quantum dot structures for efficient photovoltaic conversion, and methods of using and making the same
JP5607589B2 (ja) * 2011-08-26 2014-10-15 トヨタ自動車株式会社 量子ドット配列材料並びにこれを用いた光電変換素子及び波長変換素子
JP2013058562A (ja) 2011-09-07 2013-03-28 Semiconductor Energy Lab Co Ltd 光電変換装置
JP5946010B2 (ja) * 2011-09-16 2016-07-05 株式会社豊田中央研究所 量子ドット太陽電池およびその製造方法
US20130074912A1 (en) * 2011-09-22 2013-03-28 Rosestreet Labs, Llc Band structure engineering for improved efficiency of cdte based photovoltaics
US20140326302A1 (en) * 2011-10-20 2014-11-06 Sharp Kabushiki Kaisha Solar cell
CN102436532A (zh) * 2011-11-28 2012-05-02 华北电力大学 InAs/GaSb超晶格电子结构的设计方法
US9954129B2 (en) * 2012-05-30 2018-04-24 University Of Delaware Systems for efficient photon upconversion
JP6055619B2 (ja) * 2012-07-17 2016-12-27 シャープ株式会社 太陽電池
WO2014100707A1 (en) * 2012-12-20 2014-06-26 The Trustees Of Boston College Methods and systems for controlling phonon-scattering
SG2013096607A (en) 2012-12-27 2014-07-30 Agency Science Tech & Res Vertical light emitting diode with photonic nanostructures and method of fabrication thereof
US9240507B2 (en) 2014-01-28 2016-01-19 Sharp Kabushiki Kaisha Intermediate band solar cell using type I and type II quantum dot superlattices
US9619754B2 (en) * 2014-08-13 2017-04-11 The United States Of America, As Represented By The Secretary Of The Navy Single photon source based on a quantum dot molecule in an optical cavity
GB201420860D0 (en) * 2014-11-24 2015-01-07 Infiniled Ltd Micro-LED device
CN104916715B (zh) * 2015-05-25 2017-09-26 中国电子科技集团公司第十八研究所 一种量子点五结太阳能电池的制备方法
JP6471120B2 (ja) 2016-06-27 2019-02-13 シャープ株式会社 光電変換素子およびそれを備えた光電変換装置
US10428100B2 (en) 2017-01-13 2019-10-01 Uchicago Argonne, Llc Substituted lead halide perovskite intermediate band absorbers
JP2018190935A (ja) * 2017-05-11 2018-11-29 シャープ株式会社 量子ドット型赤外線検出器
DE102021107136A1 (de) * 2021-03-23 2022-09-29 Otto-von-Guericke-Universität Magdeburg, Körperschaft des öffentlichen Rechts Optoelektronisches Zugangssystem und Verfahren zur Herstellung eines nicht-duplizierbaren Schlüssels
JP7730766B2 (ja) * 2022-01-08 2025-08-28 勇 城之下 光吸収材料、太陽電池、および光吸収材料の製造方法
US11784805B2 (en) 2022-03-07 2023-10-10 Raytheon Company Ultra high entropy material-based non-reversible spectral signature generation via quantum dots

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6239449B1 (en) * 1998-05-05 2001-05-29 National Research Council Of Canada Quantum dot infrared photodetectors (QDIP)

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5079601A (en) 1989-12-20 1992-01-07 International Business Machines Corporation Optoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctions
US20020092987A1 (en) 1998-09-05 2002-07-18 Taehee Cho Photo detect device using quantum dots and materialization method thereof
US6507042B1 (en) 1998-12-25 2003-01-14 Fujitsu Limited Semiconductor device and method of manufacturing the same
ES2149137B1 (es) * 1999-06-09 2001-11-16 Univ Madrid Politecnica Celula solar fotovoltaica de semiconductor de banda intermedia.
US6380604B1 (en) 2000-05-18 2002-04-30 Fujitsu Limited Quantum semiconductor device having quantum dots and optical detectors using the same
AU2002224583A1 (en) 2000-06-27 2002-02-05 The Regents Of The University Of California Strain-engineered, self-assembled, semiconductor quantum dot lattices
JP3753605B2 (ja) * 2000-11-01 2006-03-08 シャープ株式会社 太陽電池およびその製造方法
TW480591B (en) 2001-01-15 2002-03-21 Nat Science Council Manufacture method of quantum dot infrared sensor
US6870178B2 (en) 2001-02-28 2005-03-22 Levon V. Asryan Semiconductor laser with reduced temperature sensitivity
EP1419519A4 (en) 2001-07-31 2006-12-13 Univ Illinois QUANTIC POINT QUANTIC POINT SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME
US6773949B2 (en) 2001-07-31 2004-08-10 The Board Of Trustees Of The University Of Illinois Semiconductor devices and methods
JP4583726B2 (ja) * 2003-05-23 2010-11-17 富士通株式会社 量子半導体装置およびその作製方法
CA2551123A1 (en) 2004-01-20 2005-07-28 Cyrium Technologies Incorporated Solar cell with epitaxially grown quantum dot material
JP4905623B2 (ja) * 2004-10-18 2012-03-28 富士通株式会社 太陽電池
ES2297972A1 (es) * 2005-05-30 2008-05-01 Universidad Politecnica De Madrid Fotodetector de infrarrojos de banda intermedia y puntos cuanticos.

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6239449B1 (en) * 1998-05-05 2001-05-29 National Research Council Of Canada Quantum dot infrared photodetectors (QDIP)

Also Published As

Publication number Publication date
EP2084755A2 (en) 2009-08-05
CN101622718A (zh) 2010-01-06
WO2008147392A3 (en) 2009-05-14
EP2084755B1 (en) 2013-10-09
TWI427803B (zh) 2014-02-21
TW200840062A (en) 2008-10-01
JP5513891B2 (ja) 2014-06-04
JP5584339B2 (ja) 2014-09-03
US20070151592A1 (en) 2007-07-05
JP2010509772A (ja) 2010-03-25
KR101352654B1 (ko) 2014-01-17
KR20090089347A (ko) 2009-08-21
JP2014013927A (ja) 2014-01-23
WO2008147392A2 (en) 2008-12-04
US7750425B2 (en) 2010-07-06

Similar Documents

Publication Publication Date Title
CN101622718B (zh) 具有嵌入在能量围栏势垒中的量子点的中间带光敏器件
CN101375407B (zh) 具有隧穿势垒嵌在无机基质中的量子点的中能带光敏器件
CN101933153B (zh) Ⅱ型量子点太阳能电池
JP5441415B2 (ja) 有機マトリックス内に備えられたトンネル障壁を有する量子ドットを備える中間バンド感光性装置
US20120160312A1 (en) Solar cell
US9240507B2 (en) Intermediate band solar cell using type I and type II quantum dot superlattices
US20120285537A1 (en) Solar cell
Alnami et al. Temperature dependent behavior of sub-monolayer quantum dot based solar cell
US9601643B2 (en) Photoelectric conversion element
Oktyabrsky et al. Nanoengineered quantum dot medium for space optoelectronic devices
TanvirAlam et al. JV Characteristics of Gan based solar cell with InGan-quantum-dots layers in the absorber
Patra et al. Self-Assembled Quantum Dot
Jolley et al. Growth and confinement effects in III–V semiconductor nanostructures

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20120425

Termination date: 20161106