GB0917747D0 - Intermediate band semiconductor photovoltaic devices, uses thereof and methods for their manufacture - Google Patents

Intermediate band semiconductor photovoltaic devices, uses thereof and methods for their manufacture

Info

Publication number
GB0917747D0
GB0917747D0 GBGB0917747.8A GB0917747A GB0917747D0 GB 0917747 D0 GB0917747 D0 GB 0917747D0 GB 0917747 A GB0917747 A GB 0917747A GB 0917747 D0 GB0917747 D0 GB 0917747D0
Authority
GB
United Kingdom
Prior art keywords
manufacture
methods
photovoltaic devices
intermediate band
band semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0917747.8A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Glasgow
Original Assignee
University of Glasgow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Glasgow filed Critical University of Glasgow
Priority to GBGB0917747.8A priority Critical patent/GB0917747D0/en
Publication of GB0917747D0 publication Critical patent/GB0917747D0/en
Priority to PCT/GB2010/001824 priority patent/WO2011042682A2/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/143—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies comprising quantum structures
    • H10F77/1433—Quantum dots
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
GBGB0917747.8A 2009-10-09 2009-10-09 Intermediate band semiconductor photovoltaic devices, uses thereof and methods for their manufacture Ceased GB0917747D0 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GBGB0917747.8A GB0917747D0 (en) 2009-10-09 2009-10-09 Intermediate band semiconductor photovoltaic devices, uses thereof and methods for their manufacture
PCT/GB2010/001824 WO2011042682A2 (en) 2009-10-09 2010-09-29 Intermediate band semiconductor photovoltaic devices, uses thereof and methods for their manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0917747.8A GB0917747D0 (en) 2009-10-09 2009-10-09 Intermediate band semiconductor photovoltaic devices, uses thereof and methods for their manufacture

Publications (1)

Publication Number Publication Date
GB0917747D0 true GB0917747D0 (en) 2009-11-25

Family

ID=41402817

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0917747.8A Ceased GB0917747D0 (en) 2009-10-09 2009-10-09 Intermediate band semiconductor photovoltaic devices, uses thereof and methods for their manufacture

Country Status (2)

Country Link
GB (1) GB0917747D0 (en)
WO (1) WO2011042682A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9196769B2 (en) 2013-06-25 2015-11-24 L-3 Communications Cincinnati Electronics Corporation Superlattice structures and infrared detector devices incorporating the same
CN103594540B (en) * 2013-11-28 2016-02-03 上海空间电源研究所 A kind of heterojunction solar cell adulterated containing interface δ
CN110649107A (en) * 2018-06-26 2020-01-03 东泰高科装备科技（北京）有限公司 Solar cell and manufacturing method thereof
CN111200030B (en) * 2018-11-19 2022-08-16 紫石能源有限公司 Solar cell and manufacturing method thereof
DE102018009744A1 (en) 2018-12-14 2020-06-18 Azur Space Solar Power Gmbh Stacked monolithic upright metamorphic multiple solar cell
DE102018009850B4 (en) 2018-12-19 2025-08-21 Azur Space Solar Power Gmbh Stacked multi-junction solar cell

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES2149137B1 (en) 1999-06-09 2001-11-16 Univ Madrid Politecnica SOLAR PHOTOVOLTAIC SEMICONDUCTOR CELL OF INTERMEDIATE CELL.
US7750425B2 (en) * 2005-12-16 2010-07-06 The Trustees Of Princeton University Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier
GB0719554D0 (en) 2007-10-05 2007-11-14 Univ Glasgow semiconductor optoelectronic devices and methods for making semiconductor optoelectronic devices
GB2467935B (en) 2009-02-19 2013-10-30 Iqe Silicon Compounds Ltd Formation of thin layers of GaAs and germanium materials

Also Published As

Publication number Publication date
WO2011042682A2 (en) 2011-04-14
WO2011042682A3 (en) 2012-05-03

Similar Documents

Publication Publication Date Title
TWI562242B (en) Semiconductor device and manufacturing method thereof
GB2483414B (en) Semiconductor Device and Manufacturing Method Thereof
TWI562245B (en) Semiconductor device and method for manufacturing the same
TWI562364B (en) Semiconductor device and manufacturing method thereof
TWI562285B (en) Semiconductor device and method for manufacturing the same
TWI562379B (en) Semiconductor device and method for manufacturing semiconductor device
TWI562330B (en) Semiconductor device
TWI562381B (en) Semiconductor device
SG10201910510UA (en) Semiconductor device
SG10201406934WA (en) Semiconductor device
EP2600390A4 (en) Chip manufacturing method
EP4084093C0 (en) Solar cell, and method of manufacturing the same
EP2497114A4 (en) Semiconductor device
GB201121915D0 (en) Semiconductor device and manufacturing method thereof
EP2421029A4 (en) Anneal wafer, method for manufacturing anneal wafer, and method for manufacturing device
TWI370532B (en) Chip package structure and method for fabricating the same
EP2506303A4 (en) Semiconductor device and method for manufacturing the same
SG10201600407SA (en) Semiconductor device and manufacturing method of the same
GB2484862B (en) Semiconductor device structure and manufacturing method thereof
EP2546869A4 (en) Semiconductor device, and process for manufacture of semiconductor device
GB2483405B (en) Semiconductor structure and method for manufacturing the same
IL218216A0 (en) Novel arylated camphenes, processes for their preparation and uses thereof
EP2417629A4 (en) Semiconductor processing
GB2486978B (en) Isolation region, semiconductor device and methods for forming the same
EP2394292A4 (en) Semiconductor material manufacture

Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)