CN103594540B - A kind of heterojunction solar cell adulterated containing interface δ - Google Patents
A kind of heterojunction solar cell adulterated containing interface δ Download PDFInfo
- Publication number
- CN103594540B CN103594540B CN201310614565.4A CN201310614565A CN103594540B CN 103594540 B CN103594540 B CN 103594540B CN 201310614565 A CN201310614565 A CN 201310614565A CN 103594540 B CN103594540 B CN 103594540B
- Authority
- CN
- China
- Prior art keywords
- solar cell
- window layer
- interface
- emitter region
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Abstract
The invention discloses a kind of heterojunction solar cell adulterated containing interface δ, this solar cell emitter region adopts N-shaped GaInP, and its thickness is 40 ~ 100nm; Window layer adopts AlInP or AlGaInP of N-shaped, and its thickness is 10 ~ 50nm; And adopting δ to adulterate, doping surface density is 10
11~ 10
13cm
-2.δ doping carries out δ doping in AlInP or the AlGaInP Window layer of solar cell and the near interface of GaInP emitter region to Window layer.The heterojunction solar cell adulterated containing interface δ provided by the invention, carries out δ in Window layer and interface, emitter region to Window layer and adulterates to strengthen charge carrier transporting in solar cell.
Description
Technical field
The present invention relates to a kind of solar cell, particularly, relate to a kind of heterojunction solar cell adulterated containing interface δ.
Background technology
Solar energy directly can be converted to electric energy by solar cell, can decrease the dependence of people's productive life to coal, petroleum and natural gas to a great extent, becomes one of most effective means utilizing green energy resource.The conversion efficiency of Group III-V semiconductor solar cell is changed most effective in current material system, there is the advantages such as resistance to elevated temperatures is good, Radiation hardness strong, good temp characteristic simultaneously, be acknowledged as high performance and long service life space of new generation main power source, be used widely at space industry.Along with the continuous progress of compound semiconductor growth technology (as MOCVD), the efficiency of iii-v solar cell obtains large increase, and three-junction solar battery efficiency is more than 34%.The conversion efficiency how promoting iii-v solar cell further becomes current research focus, the surface, emitter region that is introduced in of Window layer defines good passivation interface, improve short-circuit current density, improve open circuit voltage simultaneously, but the thing followed is Window layer generally to be needed to select band gap to be greater than the material of emitter region, this will form potential barrier between Window layer and emitter region, hinders electron transport.
In tradition solar cell, for reducing battery front surface recombination rate, need to carry out passivation to the emitter region of battery, the band gap of window layer material need be higher than the band gap of battery base and emitter region material simultaneously, otherwise the illumination of meeting absorption portion, reduces battery performance, the problem brought thus can form potential barrier of heterogenous junction in interface after the Window layer of broad-band gap contacts with the emitter region of narrow band gap, hinder the transmission of minority carrier in battery, as shown in Figure 1.
Summary of the invention
The object of this invention is to provide a kind of solar cell, in Window layer and interface, emitter region, δ is carried out to Window layer and adulterate to strengthen charge carrier transporting in solar cell.
In order to achieve the above object, the invention provides a kind of heterojunction solar cell adulterated containing interface δ, wherein, the emitter region of this solar cell adopts N-shaped GaInP, and its thickness is 40 ~ 100nm; Window layer adopts AlInP or AlGaInP of N-shaped, and its thickness is 10 ~ 50nm; And adopting δ to adulterate, doping surface density is 10
11~ 10
13cm
-2.
The above-mentioned heterojunction solar cell adulterated containing interface δ, wherein, described δ doping carries out δ doping in AlInP or the AlGaInP Window layer of solar cell and the near interface of GaInP emitter region to Window layer.
Heterojunction solar cell containing interface δ doping provided by the invention has the following advantages:
Compared to existing solar cell, when δ doping is carried out to Window layer, interface charge can be introduced in Window layer and interface, emitter region, electromotive force is made more to drop to emitter region, interface conduction band barrier spike is reduced, thus makes the quasi-Fermi level of electronics be tending towards evening up, strengthen transporting of minority carrier (electronics), the effective barrier height in hole also can raise simultaneously, and that so improves interface charge carrier transports limit procedure.This also makes the selection flexibility of window layer material larger.
Accompanying drawing explanation
Fig. 1 is the energy band diagram of the solar cell containing common Window layer.
Fig. 2 is the heterojunction solar cell energy band diagram adulterated containing interface δ of the present invention.
Fig. 3 is the preferred embodiment structural representation of the heterojunction solar cell containing interface δ doping of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is further described.
The heterojunction solar cell adulterated containing interface δ provided by the invention, emitter region adopts N-shaped GaInP(gallium indium phosphorus), its thickness is 40 ~ 100nm; Window layer adopts the AlInP(aluminium indium phosphorus of N-shaped) or AlGaInP(AlGaInP), its thickness is 10 ~ 50nm; And adopting δ to adulterate, doping surface density is 10
11~ 10
13cm
-2.
δ doping carries out δ doping in AlInP or the AlGaInP Window layer of solar cell and the near interface of GaInP emitter region to Window layer.As shown in Figure 2, pull-up can be with in emitter region by δ doping, causes emitter region quasi-Fermi level and Window layer quasi-Fermi level to be tending towards evening up.
Embodiment 1
As shown in Figure 3, for unijunction solar cell, it comprises GaAs(GaAs) resilient coating 1, AlGaInP back surface field 2, GaInP active layer 3, GaInP emitter region 4, AlInP Window layer 5, GaAs cap layer 6.This structure adopts low pressure metal organic chemical vapor deposition (MOCVD) equipment at N-shaped GaAs Grown, carries out δ doping when growth window layer.Emitter region thickness is 50nm; Window layer thickness is 30nm; The doping surface density of δ doping is 10
12cm
-2.
Embodiment 2
For unijunction solar cell, it comprises GaAs resilient coating 1, AlGaInP back surface field 2, GaInP active layer 3, GaInP emitter region 4, AlGaInP Window layer 5, GaAs cap layer 6.This structure adopts low pressure metal organic chemical vapor deposition equipment at N-shaped GaAs Grown, carries out δ doping when growth window layer.Emitter region thickness is 80nm; Window layer thickness is 50nm; The doping surface density of δ doping is 10
13cm
-2.
The heterojunction solar cell adulterated containing interface δ provided by the invention, for strengthening transporting of charge carrier, from the potential barrier of heterogenous junction aspect reduced between Window layer and emitter region, carries out δ doping to Window layer.δ doping can introduce positive or negative electric charge near interface, and these electric charges can produce the discontinuity of electromotive force in interface.Conduction band discontinuity Δ Ec can change interface dipole density and surface charge density.As shown in Figure 2, because this battery emitter region is N-shaped material, therefore minority carrier is electronics in fig. 2, and electronics transports left.When carrying out δ doping to Window layer, the conduction band barrier of Window layer and interface, emitter region is pulled to side, interface, and barrier height significantly reduces, and therefore electronics overcomes potential barrier and transports institute's energy requirement and decrease, and Effective Carrier Density increases greatly.The present invention adopts this structure can significantly strengthen transporting of the interface of charge carrier between emitter region and Window layer, thus improves short-circuit current density.
Although content of the present invention has done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (1)
1. containing the heterojunction solar cell that interface δ adulterates, it is characterized in that, the emitter region of this solar cell adopts N-shaped GaInP, and its thickness is 40 ~ 100nm; Window layer adopts AlInP or AlGaInP of N-shaped, and its thickness is 10 ~ 50nm; And adopting δ to adulterate, doping surface density is 10
11~ 10
13cm
-2, described δ doping carries out δ doping in AlInP or the AlGaInP Window layer of solar cell and the near interface of GaInP emitter region to Window layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310614565.4A CN103594540B (en) | 2013-11-28 | 2013-11-28 | A kind of heterojunction solar cell adulterated containing interface δ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310614565.4A CN103594540B (en) | 2013-11-28 | 2013-11-28 | A kind of heterojunction solar cell adulterated containing interface δ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103594540A CN103594540A (en) | 2014-02-19 |
| CN103594540B true CN103594540B (en) | 2016-02-03 |
Family
ID=50084607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310614565.4A Active CN103594540B (en) | 2013-11-28 | 2013-11-28 | A kind of heterojunction solar cell adulterated containing interface δ |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103594540B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111276560A (en) * | 2020-02-14 | 2020-06-12 | 扬州乾照光电有限公司 | Gallium arsenide solar cell and manufacturing method thereof |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104393090B (en) * | 2014-10-20 | 2016-08-24 | 上海空间电源研究所 | A kind of reverse three-junction solar battery of the broad-band gap containing heterojunction structure |
| CN106129165B (en) * | 2016-09-05 | 2017-06-27 | 上海空间电源研究所 | A kind of heterojunction solar battery for helping effect containing bilateral field |
| CN111341872B (en) * | 2018-12-18 | 2022-10-25 | 紫石能源有限公司 | Gallium arsenide solar cell epitaxial structure and growth method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005004243A1 (en) * | 2003-07-02 | 2005-01-13 | Semi-Conductor Devices - An Elbit Systems - Rafael Partnership | Depletion-less photodiode with suppressed dark current and method for producing the same |
| CN101764165A (en) * | 2008-12-25 | 2010-06-30 | 上海空间电源研究所 | Multijunction gallium arsenide solar cell |
| WO2011042682A3 (en) * | 2009-10-09 | 2012-05-03 | The University Court Of The University Of Glasgow | Intermediate band semiconductor photovoltaic devices, uses thereof and methods for their manufacture |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3250425B2 (en) * | 1995-09-13 | 2002-01-28 | 日立電線株式会社 | Compound semiconductor wafer and solar cell |
| JP2006210559A (en) * | 2005-01-27 | 2006-08-10 | Toppan Printing Co Ltd | Non-single-crystal solar battery, manufacturing method thereof, and non-single-crystal solar battery manufacturing apparatus |
-
2013
- 2013-11-28 CN CN201310614565.4A patent/CN103594540B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005004243A1 (en) * | 2003-07-02 | 2005-01-13 | Semi-Conductor Devices - An Elbit Systems - Rafael Partnership | Depletion-less photodiode with suppressed dark current and method for producing the same |
| CN101764165A (en) * | 2008-12-25 | 2010-06-30 | 上海空间电源研究所 | Multijunction gallium arsenide solar cell |
| WO2011042682A3 (en) * | 2009-10-09 | 2012-05-03 | The University Court Of The University Of Glasgow | Intermediate band semiconductor photovoltaic devices, uses thereof and methods for their manufacture |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111276560A (en) * | 2020-02-14 | 2020-06-12 | 扬州乾照光电有限公司 | Gallium arsenide solar cell and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103594540A (en) | 2014-02-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8993873B2 (en) | Solar cell with a backside via to contact the emitter layer | |
| CN103594540B (en) | A kind of heterojunction solar cell adulterated containing interface δ | |
| JP6473220B2 (en) | Solar cell with delta doping layer | |
| CN102969387B (en) | GaInP/GaAs/InGaAs three-joint solar cell epitaxial structure | |
| CN102790116B (en) | Upside-down mounting GaInP/GaAs/Ge/Ge four-junction solar cell and preparation method thereof | |
| CN106298990B (en) | A kind of nonpolar solar cell using spontaneous polarization electric field | |
| CN103000740B (en) | GaAs/GaInP double-junction solar battery and preparation method thereof | |
| US20110308607A1 (en) | Group iii-v solar cell and method of manufacturing the same | |
| CN102738311B (en) | Preparation method of InGaN/Si double-node solar cell | |
| CN103633181B (en) | A kind of solar cell containing II type hetero-junctions Window layer | |
| CN103579388B (en) | A kind of solar cell containing double aluminum back surface fields | |
| Song et al. | Improved efficiency of InGaN/GaN-based multiple quantum well solar cells by reducing contact resistance | |
| CN102738267B (en) | Solar battery with superlattices and manufacturing method thereof | |
| CN105355683A (en) | Forward-direction triple junction solar cell based on p-type doped quantum well structure | |
| CN102024879B (en) | Method for reducing dark current of gallium arsenide isotope battery | |
| CN205039161U (en) | InGaN solar cell | |
| CN104393090B (en) | A kind of reverse three-junction solar battery of the broad-band gap containing heterojunction structure | |
| CN206210825U (en) | A kind of n type gallium nitride based light-emitting diode | |
| CN104779313A (en) | Four-knot cascaded solar cell and preparation method thereof | |
| CN104347747A (en) | Three-junction solar cell formed through growing nitrogen indium gallium system on silicon cell | |
| CN210467862U (en) | Three-junction GaAs solar cell epitaxial structure | |
| Song et al. | Improved photovoltaic performance of InGaN single junction solar cells by using n-on-p type device structure | |
| CN203398145U (en) | InGaN/Si three-junction solar cell | |
| CN104779310A (en) | Solar cell | |
| CN204204872U (en) | A kind of Multiple Quantum Well solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C53 | Correction of patent for invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Zhang Jianqin Inventor after: Lu Hongbo Inventor after: Zhang Wei Inventor after: Zhou Dayong Inventor after: Li Xinyi Inventor after: Sun Lijie Inventor after: Chen Kaijian Inventor before: Lu Hongbo Inventor before: Zhang Wei Inventor before: Zhou Dayong Inventor before: Li Xinyi Inventor before: Sun Lijie Inventor before: Chen Kaijian |
|
| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: LU HONGBO ZHANG WEI ZHOU DAYONG LI XINYI SUN LIJIE CHEN KAIJIAN TO: ZHANG JIANQIN LU HONGBO ZHANG WEI ZHOU DAYONG LI XINYI SUN LIJIE CHEN KAIJIAN |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |