CN106298990B - A kind of nonpolar solar cell using spontaneous polarization electric field - Google Patents
A kind of nonpolar solar cell using spontaneous polarization electric field Download PDFInfo
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- CN106298990B CN106298990B CN201610968769.1A CN201610968769A CN106298990B CN 106298990 B CN106298990 B CN 106298990B CN 201610968769 A CN201610968769 A CN 201610968769A CN 106298990 B CN106298990 B CN 106298990B
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- electric field
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- solar cell
- polarization electric
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- 230000005684 electric field Effects 0.000 title claims abstract description 34
- 230000010287 polarization Effects 0.000 title claims abstract description 24
- 230000002269 spontaneous effect Effects 0.000 title claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229910002601 GaN Inorganic materials 0.000 claims description 62
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000005036 potential barrier Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Classifications
-
- H01L31/022425—
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention provides a kind of nonpolar solar cell with spontaneous polarization electric field.Include successively from bottom to top：Substrate, GaN nucleating layers, undoped GaN cushions, n-type GaN layer, InGaN absorbed layers, p-type GaN layer, wherein all nitride epitaxial layers in addition to substrate are formed by non-polar material；P-type Ohmic electrode is drawn in p-type GaN layer, N-shaped Ohmic electrode is drawn in n-type GaN layer.Due to there is the spontaneous polarization electric field of the single direction parallel to extension aspect in non-polar epitaxial aspect, and p-type and N-shaped GaN Ohmic electrodes are located at the positive and negative both ends of spontaneous polarization electric field respectively, therefore the presence of spontaneous polarization electric field has is spatially separating efficiency beneficial to the transverse direction for improving photo-generated carrier electron hole pair in solar cell parallel to battery surface, and this spontaneous polarization electric field can also accelerate separated hole and electronics being transported at positive and negative electrode respectively, so as to be greatly improved the generation efficiency of photoelectric current.
Description
Technical field
The present invention relates to semiconductor photoelectronic device field, and in particular to it is a kind of with spontaneous polarization electric field it is nonpolar too
Positive energy battery.
Background technology
InGaN materials have a high potential in terms of high performance solar batteries are prepared.First, InxGa1-xN materials are direct band gaps
Semi-conducting material, by adjusting the In components in ternary compound InGaN materials, it is possible to achieve its band-gap energy 0.7~
Consecutive variations between 3.4eV, its absorption spectrum almost with solar spectrum perfect matching [1].Secondly, InGaN materials also have height
The advantages that absorption coefficient, high electron mobility, high rigidity, high temperature resistant, radioresistance, be the ideal for realizing full spectrum solar cell
Material, is with a wide range of applications and huge researching value [2].
However, the electricity conversion of the GaN base solar cell of existing quantum well structure is still relatively low, such as Fig. 2 institutes
Show.Polarized electric field in Quantum Well is a key factor for causing the electricity conversion of solar cell low.Due to fibre
There is very strong polarized electric field in the structure GaN-based material of zinc ore, its intensity is up to MV/cm magnitudes, and existing along (0001) direction
Polar GaN base solar cell, the direction of its polarized electric field direction and p-n junction built in field is on the contrary, can cause built in field
Compensation, causes net electric field in active area to reduce, and is unfavorable for effective collection of photo-generated carrier；At the same time in polarity solar cell
Polarized electric field can enable quantum well region to produce additional barriers with run-off the straight, transporting for photo-generated carrier is hindered, to the sun
The performance of energy battery produces very detrimental effect [3].
For improve solar cell electricity conversion, the prior art be typically employed in device back make speculum,
Antireflective film is made in device surface or absorption efficiency of the material to light is improved using technologies such as InGaN/GaN superlattice structures
[4,5].But it still can not fundamentally solve polarized electric field in polarity device using these technologies and built-in field compensation is made
Into photoelectric conversion efficiency decline the problem of.Fundamentally to solve the problems, such as this, need to make it that polarized electric field direction and p-n junction are built-in
The direction of electric field is identical or vertical, is compensated so that it does not form p-n junction built in field, but conventional polar device obviously can not
Meet this requirement.Therefore, non-polar GaN based solar battery is researched and developed, is had for the electricity conversion for improving solar cell
There is very important meaning.
Bibliography：
1.Matsuoka,T.,et al.,Optical bandgap energy of wurtzite InN.Applied
Physics Letters,2002.81(7):p.1246-1248.
2.Jani,O.,et al.,Design and characterization of GaN/InGaN solar
cells.Applied Physics Letters,2007.91(13):p.132117.
3.Chang,J.-Y.,et al.,Simulation of high-efficiency GaN/InGaN pin
solar cell with suppressed polarization and barrier effects.IEEE Journal of
Quantum Electronics,2013.49(1):p.17-23.
4.Chen,X.,et al.,Growth,fabrication,and characterization of InGaN
solar cells.physica status solidi(a),2008.205(5):p.1103-1105.
5.Tsai,C.-L.,et al.,Substrate-free large gap InGaN solar cells with
bottom reflector.Solid-State Electronics,2010.54(5):p.541-544.
The content of the invention
Technical problem：The problems of polarity quantum well structure solar cell prepared for the above-mentioned prior art,
The present invention provides a kind of nonpolar solar cell with spontaneous polarization electric field.Both can be fundamentally using this kind of structure
Solve the problems, such as compensation of the polarized electric field to p-n junction built in field in conventional polar quantum well structure solar cell, while profit
It can accelerate separated hole and electronics being transported at positive and negative electrode respectively again with this spontaneous polarization electric field, so as to greatly carry
The photoelectric efficiency of high solar battery.
Technical solution：It is of the invention that there is the nonpolar solar cell of spontaneous polarization electric field to include setting successively from bottom to top recklessly
The substrate put, GaN nucleating layers, undoped GaN cushions, n-type GaN layer, InGaN absorbed layers, p-type GaN layer, in p-type GaN layer
P-type Ohmic electrode is drawn, N-shaped Ohmic electrode is drawn in n-type GaN layer.
Wherein；
The GaN nucleating layers, undoped GaN cushions, n-type GaN layer, InGaN absorbed layers, p-type GaN layer are by nonpolar
Material is formed.
The p-type Ohmic electrode and N-shaped Ohmic electrode are located at the positive and negative both ends of spontaneous polarization electric field respectively.
The substrate is polarity, the sapphire of semi-polarity or nonpolar orientation, carborundum, zinc oxide, gallium nitride, nitridation
Aluminium.
The thickness of the GaN nucleating layers is 15-50nm, and the thickness of undoped GaN cushions is 50-5000nm, N-shaped GaN
The thickness of layer is 200-5000nm, and the thickness of InGaN absorbed layers is 20-2000nm, and the thickness of p-type GaN layer is 100-1000nm.
The InGaN absorbed layers are individual layer InGaN epitaxial layer structures, or InGaN/GaN multi-quantum pit structures, wherein measuring
Sub- trap trap width is 2-10nm, and potential barrier width is 5-20nm, and repetition period number is 1-50.
The material of the p-type Ohmic electrode and N-shaped Ohmic electrode is Al, Ni, any one of Au or Ti metal or by
The combination electrode material that above various metals are formed.
Beneficial effect：The present invention is to provide a kind of nonpolar solar cell with spontaneous polarization electric field.Using non-
Polar material can fundamentally avoid quantum well region polarized electric field from being conducive to improve to the compensating effect of p-n built in fields
The longitudinal direction of photo-generated carrier is i.e. perpendicular to battery surface separative efficiency.Furthermore, spontaneous polarization electric field in non-polar material
Presence have and be spatially separating efficiency parallel to battery surface beneficial to improving the transverse direction of photo-generated carrier in solar cell, and
Since p-type and N-shaped GaN Ohmic electrodes are located at the positive and negative both ends of spontaneous polarization electric field respectively, so this spontaneous polarization electric field may be used also
Separated hole and electronics are transported at positive and negative electrode by acceleration respectively, so that the generation efficiency of photoelectric current is greatly improved, therefore
Have great importance for the electricity conversion for lifting solar cell.
Brief description of the drawings
Fig. 1 is a kind of Rotating fields schematic diagram of the nonpolar solar cell with spontaneous polarization electric field.
Have in figure：Substrate 101, GaN nucleating layers 102, undoped GaN cushions 103, n-type GaN layer 104, InGaN absorb
Layer 105, p-type GaN layer 106, p-type Ohmic electrode 107, N-shaped Ohmic electrode 108.
Fig. 2 is the Rotating fields schematic diagram of polarity solar cell prepared by the prior art.
Have in figure：Substrate 201, GaN nucleating layers 202, undoped GaN cushions 203, n-type GaN layer 204, InGaN absorb
Layer 205, p-type GaN layer 206, p-type Ohmic electrode 207, N-shaped Ohmic electrode 208.
Embodiment
To achieve the above object, the present invention uses following technical proposals：
There is the present invention the nonpolar solar cell of spontaneous polarization electric field to include the substrate set gradually from bottom to top
101, GaN nucleating layers 102, undoped GaN cushions 103, n-type GaN layer 104, InGaN absorbed layers 105, p-type GaN layer 106,
P-type Ohmic electrode 107 is drawn in p-type GaN layer, N-shaped Ohmic electrode 108 is drawn in n-type GaN layer.
Preferably, the GaN nucleating layers 102, undoped GaN cushions 103, n-type GaN layer 104, InGaN absorbed layers
105th, p-type GaN layer 106 is formed by non-polar material.
Preferably, the p-type Ohmic electrode 107 and N-shaped Ohmic electrode 108 are located at positive and negative the two of spontaneous polarization electric field respectively
End.
Preferably, the substrate 101 can be polarity, the sapphire of semi-polarity and nonpolar orientation, carborundum, oxidation
The materials such as zinc, gallium nitride, aluminium nitride.
The thickness of the preferable GaN nucleating layers 102 is 15-50nm, and the thickness of undoped GaN cushions 103 is 50-
5000nm, the thickness of n-type GaN layer 104 are 200-5000nm, and the thickness of InGaN absorbed layers 105 is 20-2000nm, p-type GaN layer
106 thickness is 100-1000nm.
The InGaN absorbed layers 105 can be individual layer InGaN epitaxial layer structures or InGaN/GaN multiple quantum wells
Structure, wherein Quantum Well trap width are 2-10nm, and potential barrier width is 5-20nm, and repetition period number is 1-50.
Preferably, the material of the p-type Ohmic electrode 107 and N-shaped Ohmic electrode 108 can be Al, Ni, Au, in Ti
Any type metal or the combination electrode material being made of various metals.
The foregoing is merely the present invention better embodiment, protection scope of the present invention not using the above embodiment as
Limit, as long as those of ordinary skill in the art's equivalent modification that disclosure is done according to the present invention or change, should all include power
In protection domain described in sharp claim.
Claims (4)
- A kind of 1. nonpolar solar cell with spontaneous polarization electric field, it is characterised in that：The solar cell is included under The substrate (101) set gradually on and, GaN nucleating layers (102), undoped GaN cushions (103), n-type GaN layer (104), InGaN absorbed layers (105), p-type GaN layer (106), draw p-type Ohmic electrode (107), in n-type GaN layer in p-type GaN layer Draw N-shaped Ohmic electrode (108)；Wherein：The GaN nucleating layers (102), undoped GaN cushions (103), n-type GaN layer (104), InGaN absorbed layers (105), p-type GaN layer (106) is formed by non-polar material；The p-type Ohmic electrode (107) and N-shaped Ohmic electrode (108) are located at the positive and negative both ends of spontaneous polarization electric field respectively；The substrate (101) is polarity, the sapphire of semi-polarity or nonpolar orientation, carborundum, zinc oxide, gallium nitride, nitridation Aluminium.
- 2. the nonpolar solar cell according to claim 1 with spontaneous polarization electric field, it is characterized in that：The GaN The thickness of nucleating layer (102) is 15-50nm, and the thickness of undoped GaN cushions (103) is 50-5000nm, n-type GaN layer (104) thickness is 200-5000nm, and the thickness of InGaN absorbed layers (105) is 20-2000nm, the thickness of p-type GaN layer (106) For 100-1000nm.
- 3. the nonpolar solar cell according to claim 1 with spontaneous polarization electric field, it is characterized in that：It is described InGaN absorbed layers (105) are individual layer InGaN epitaxial layer structures, or InGaN/GaN multi-quantum pit structures, wherein Quantum Well trap Width is 2-10nm, and potential barrier width is 5-20nm, and repetition period number is 1-50.
- 4. the nonpolar solar cell according to claim 1 with spontaneous polarization electric field, it is characterized in that：The p-type The material of Ohmic electrode (107) and N-shaped Ohmic electrode (108) is Al, Ni, any one of Au or Ti metal or by the above The combination electrode material that various metals are formed.
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| CN106298990B true CN106298990B (en) | 2018-04-24 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107240615B (en) * | 2017-05-15 | 2019-03-12 | 东南大学 | A kind of ultraviolet detector with nonpolar absorbed layer |
| CN108269866B (en) * | 2018-01-30 | 2020-02-21 | 中国科学院半导体研究所 | Mixed polarity InGaN solar cell structure |
| CN108269877A (en) * | 2018-01-30 | 2018-07-10 | 中国科学院半导体研究所 | A kind of InGaN solar battery structures |
| CN108198893A (en) * | 2018-01-30 | 2018-06-22 | 中国科学院半导体研究所 | A kind of nitrogen face polar InGaN solar battery structures |
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| CN103094378B (en) * | 2013-01-28 | 2016-09-14 | 中国科学院半导体研究所 | Containing the back of the body incidence solaode becoming In component InGaN/GaN multi-layer quantum well structure |
| KR20140146998A (en) * | 2013-06-17 | 2014-12-29 | 전영권 | Solar cells and manufacturing method for the same |
| CN104201220B (en) * | 2014-08-26 | 2016-06-29 | 中国科学院半导体研究所 | Indium gallium nitrogen/nitride multi-quantum well solaode containing low temperature interposed layer |
| CN104393088B (en) * | 2014-10-29 | 2016-08-17 | 中国科学院半导体研究所 | InGaN/AlInGaN MQW solar battery structure |
| CN205039161U (en) * | 2015-10-26 | 2016-02-17 | 南京交通职业技术学院 | InGaN solar cell |
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| Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate;Tatsuro Nakao, et al.;《Applied Physics Express》;20111005;第4卷;page 101001-1-3 * |
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Address after: 210093 Nanjing University Science Park, 22 Hankou Road, Gulou District, Nanjing City, Jiangsu Province Patentee after: SOUTHEAST University Address before: 210033 Xigang office, Qixia District, Nanjing, Jiangsu, No. 8, Qi Min Dong Road, Xingshan City, Patentee before: Southeast University |
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