CN106298990A - A kind of nonpolar solaode utilizing spontaneous polarization electric field - Google Patents
A kind of nonpolar solaode utilizing spontaneous polarization electric field Download PDFInfo
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- CN106298990A CN106298990A CN201610968769.1A CN201610968769A CN106298990A CN 106298990 A CN106298990 A CN 106298990A CN 201610968769 A CN201610968769 A CN 201610968769A CN 106298990 A CN106298990 A CN 106298990A
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- electric field
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- solaode
- polarization electric
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- 230000005684 electric field Effects 0.000 title claims abstract description 37
- 230000010287 polarization Effects 0.000 title claims abstract description 27
- 230000002269 spontaneous effect Effects 0.000 title claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229910002601 GaN Inorganic materials 0.000 claims description 62
- 239000010410 layer Substances 0.000 claims description 56
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 239000007772 electrode material Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 238000005036 potential barrier Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 238000000926 separation method Methods 0.000 abstract description 4
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000004223 radioprotective effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a kind of nonpolar solaode with spontaneous polarization electric field.Including the most successively: substrate, GaN nucleating layer, undoped GaN cushion, n-type GaN layer, InGaN absorbed layer, p-type GaN layer, wherein all nitride epitaxial layers in addition to substrate are constituted by non-polar material；P-type GaN layer is drawn p-type Ohmic electrode, n-type GaN layer is drawn N-shaped Ohmic electrode.Owing to there is the spontaneous polarization electric field of the single direction being parallel to extension aspect in non-polar epitaxial aspect, and p-type and N-shaped GaN Ohmic electrode lay respectively at the positive and negative two ends of spontaneous polarization electric field, therefore the existence of spontaneous polarization electric field have beneficially improve photo-generated carrier electron hole pair in solaode be laterally i.e. parallel to battery surface be spatially separating efficiency, and this spontaneous polarization electric field also can accelerate to be transported at positive and negative electrode hole and the electronics of separation respectively, thus is greatly improved the generation efficiency of photoelectric current.
Description
Technical field
The present invention relates to semiconductor photoelectronic device field, be specifically related to a kind of have spontaneous polarization electric field nonpolar too
Sun can battery.
Background technology
InGaN material has a high potential in terms of preparing high performance solar batteries.First, InxGa1-xN material is direct band gap
Semi-conducting material, by the In component in regulation ternary compound InGaN material, it is possible to achieve its band-gap energy 0.7～
Consecutive variations between 3.4eV, its absorption spectrum almost with solar spectrum Perfect Matchings [1].Secondly, InGaN material also has height
The advantages such as absorptance, high electron mobility, high rigidity, high temperature resistant, radioprotective, are the ideals realizing full spectrum solaode
Material, is with a wide range of applications and huge researching value [2].
But, the electricity conversion of the GaN base solaode of existing quantum well structure is the most relatively low, such as Fig. 2 institute
Show.Polarized electric field in SQW is the key factor causing the electricity conversion of solaode low.Due to fibre
There is the strongest polarized electric field in the structure GaN-based material of zinc ore, its intensity is up to MV/cm magnitude, and existing along (0001) direction
Polar GaN base solar cell, its polarized electric field direction is in opposite direction with p-n junction built in field, can cause built in field
Compensating, in causing active area, clean electric field reduces, and is unfavorable for effective collection of photo-generated carrier；Simultaneously in polarity solaode
Polarized electric field can make quantum well region energy band run-off the straight, produces additional barriers, hinders transporting, to the sun of photo-generated carrier
The performance of energy battery produces very adverse influence [3].
For improve solaode electricity conversion, prior art be typically employed in device back make reflecting mirror,
Make antireflective film at device surface or use the technology such as InGaN/GaN superlattice structure to improve the material absorption efficiency to light
[4,5].But use these technology still cannot fundamentally solve polarized electric field in polarity device and built-in field compensation is made
The problem that the photoelectric transformation efficiency become declines.Fundamentally to solve this problem, polarized electric field direction need to be made built-in with p-n junction
The direction of electric field is identical or vertical, compensates so that p-n junction built in field is not formed by it, but conventional polar device obviously cannot
Meet this requirement.Therefore, research and develop non-polar GaN based solar battery, for improving the electricity conversion tool of solaode
There is very important meaning.
List of references:
1.Matsuoka,T.,et al.,Optical bandgap energy of wurtzite InN.Applied
Physics Letters,2002.81(7):p.1246-1248.
2.Jani,O.,et al.,Design and characterization of GaN/InGaN solar
cells.Applied Physics Letters,2007.91(13):p.132117.
3.Chang,J.-Y.,et al.,Simulation of high-efficiency GaN/InGaN pin
solar cell with suppressed polarization and barrier effects.IEEE Journal of
Quantum Electronics,2013.49(1):p.17-23.
4.Chen,X.,et al.,Growth,fabrication,and characterization of InGaN
solar cells.physica status solidi(a),2008.205(5):p.1103-1105.
5.Tsai,C.-L.,et al.,Substrate-free large gap InGaN solar cells with
bottom reflector.Solid-State Electronics,2010.54(5):p.541-544.
Summary of the invention
Technical problem: the problem existing for polarity quantum well structure solaode prepared by above-mentioned prior art,
The invention provides a kind of nonpolar solaode with spontaneous polarization electric field.Use this kind of structure both can be fundamentally
Solve the polarized electric field problem to the compensation of p-n junction built in field in conventional polar quantum well structure solaode, simultaneously profit
Can accelerate again to be transported at positive and negative electrode hole and the electronics of separation respectively with this spontaneous polarization electric field, thus greatly carry
The photoelectric efficiency of high solar battery.
Technical scheme: the present invention recklessly has the nonpolar solaode of spontaneous polarization electric field and includes setting the most successively
The substrate put, GaN nucleating layer, undoped GaN cushion, n-type GaN layer, InGaN absorbed layer, p-type GaN layer, in p-type GaN layer
Draw p-type Ohmic electrode, n-type GaN layer is drawn N-shaped Ohmic electrode.
Wherein；
Described GaN nucleating layer, undoped GaN cushion, n-type GaN layer, InGaN absorbed layer, p-type GaN layer are by nonpolar
Material is constituted.
Described p-type Ohmic electrode and N-shaped Ohmic electrode lay respectively at the positive and negative two ends of spontaneous polarization electric field.
Described substrate is polarity, semi-polarity or the sapphire of nonpolar orientation, carborundum, zinc oxide, gallium nitride, nitridation
Aluminum.
The thickness of described GaN nucleating layer is 15-50nm, and the thickness of undoped GaN cushion is 50-5000nm, N-shaped GaN
The thickness that thickness is 200-5000nm, InGaN absorbed layer of layer is 20-2000nm, and the thickness of p-type GaN layer is 100-1000nm.
Described InGaN absorbed layer is monolayer InGaN epitaxial layer structure, or InGaN/GaN multi-quantum pit structure, Qi Zhongliang
The sub-a width of 2-10nm of trap trap, a width of 5-20nm of potential barrier, repetition period number is 1-50.
The material of described p-type Ohmic electrode and N-shaped Ohmic electrode be any one of Al, Ni, Au or Ti metal or by
The combination electrode material that above various metals is constituted.
Beneficial effect: the present invention is to provide a kind of nonpolar solaode with spontaneous polarization electric field.Use non-
Polar material can fundamentally avoid the quantum well region polarized electric field compensating effect to p-n built in field, is conducive to improving
The longitudinal direction of photo-generated carrier is i.e. perpendicular to battery surface separation efficiency.Furthermore, spontaneous polarization electric field in non-polar material
Existence have beneficially improve photo-generated carrier in solaode laterally being i.e. parallel to battery surface is spatially separating efficiency, and
Owing to p-type and N-shaped GaN Ohmic electrode lay respectively at the positive and negative two ends of spontaneous polarization electric field, so this spontaneous polarization electric field also may be used
Accelerate to be transported at positive and negative electrode hole and the electronics of separation respectively, thus be greatly improved the generation efficiency of photoelectric current, therefore
Have great importance for promoting the electricity conversion of solaode.
Accompanying drawing explanation
Fig. 1 is the Rotating fields schematic diagram of a kind of nonpolar solaode with spontaneous polarization electric field.
Figure has: substrate 101, GaN nucleating layer 102, undoped GaN cushion 103, n-type GaN layer 104, InGaN absorb
Layer 105, p-type GaN layer 106, p-type Ohmic electrode 107, N-shaped Ohmic electrode 108.
Fig. 2 is the Rotating fields schematic diagram of polarity solaode prepared by prior art.
Figure has: substrate 201, GaN nucleating layer 202, undoped GaN cushion 203, n-type GaN layer 204, InGaN absorb
Layer 205, p-type GaN layer 206, p-type Ohmic electrode 207, N-shaped Ohmic electrode 208.
Detailed description of the invention
For achieving the above object, the present invention uses following technical proposals:
The present invention has the substrate that the nonpolar solaode of spontaneous polarization electric field includes setting gradually from bottom to top
101, GaN nucleating layers 102, undoped GaN cushion 103, n-type GaN layer 104, InGaN absorbed layer 105, p-type GaN layer 106,
Draw p-type Ohmic electrode 107 in p-type GaN layer, n-type GaN layer is drawn N-shaped Ohmic electrode 108.
Preferably, described GaN nucleating layer 102, undoped GaN cushion 103, n-type GaN layer 104, InGaN absorbed layer
105, p-type GaN layer 106 is constituted by non-polar material.
Preferably, described p-type Ohmic electrode 107 and N-shaped Ohmic electrode 108 lay respectively at positive and negative the two of spontaneous polarization electric field
End.
Preferably, described substrate 101 can be polarity, semi-polarity and the sapphire of nonpolar orientation, carborundum, oxidation
The materials such as zinc, gallium nitride, aluminium nitride.
The thickness of preferred described GaN nucleating layer 102 is 15-50nm, and the thickness of undoped GaN cushion 103 is 50-
5000nm, the thickness of n-type GaN layer 104 be the thickness of 200-5000nm, InGaN absorbed layer 105 be 20-2000nm, p-type GaN layer
The thickness of 106 is 100-1000nm.
Described InGaN absorbed layer 105 can be monolayer InGaN epitaxial layer structure, it is also possible to be InGaN/GaN MQW
Structure, the wherein a width of 2-10nm of SQW trap, a width of 5-20nm of potential barrier, repetition period number is 1-50.
Preferably, the material of described p-type Ohmic electrode 107 and N-shaped Ohmic electrode 108 can be Al, in Ni, Au, Ti
Any metal or the combination electrode material being made up of various metals.
The foregoing is only the better embodiment of the present invention, protection scope of the present invention with above-mentioned embodiment is not
Limit, as long as those of ordinary skill in the art modify or change according to the equivalence that disclosed content is done, all should include power in
In profit protection domain described in claim.
Claims (7)
1. a nonpolar solaode with spontaneous polarization electric field, it is characterised in that: under this solaode includes certainly
The substrate (101) set gradually on and, GaN nucleating layer (102), undoped GaN cushion (103), n-type GaN layer (104),
InGaN absorbed layer (105), p-type GaN layer (106), draw p-type Ohmic electrode (107), in p-type GaN layer in n-type GaN layer
Draw N-shaped Ohmic electrode (108).
The nonpolar solaode with spontaneous polarization electric field the most according to claim 1, is characterized by: described GaN
Nucleating layer (102), undoped GaN cushion (103), n-type GaN layer (104), InGaN absorbed layer (105), p-type GaN layer (106)
Constituted by non-polar material.
The nonpolar solaode with spontaneous polarization electric field the most according to claim 1, is characterized by: described p-type
Ohmic electrode 107 and N-shaped Ohmic electrode 108 lay respectively at the positive and negative two ends of spontaneous polarization electric field.
The nonpolar solaode with spontaneous polarization electric field the most according to claim 1, is characterized by: described substrate
(101) it is polarity, semi-polarity or the sapphire of nonpolar orientation, carborundum, zinc oxide, gallium nitride, aluminium nitride.
The nonpolar solaode with spontaneous polarization electric field the most according to claim 1, is characterized by: described GaN
The thickness of nucleating layer (102) is 15-50nm, and the thickness of undoped GaN cushion (103) is 50-5000nm, n-type GaN layer
(104) thickness be the thickness of 200-5000nm, InGaN absorbed layer (105) be 20-2000nm, the thickness of p-type GaN layer (106)
For 100-1000nm.
The nonpolar solaode with spontaneous polarization electric field the most according to claim 1, is characterized by: described
InGaN absorbed layer (105) is monolayer InGaN epitaxial layer structure, or InGaN/GaN multi-quantum pit structure, wherein SQW trap
A width of 2-10nm, a width of 5-20nm of potential barrier, repetition period number is 1-50.
The nonpolar solaode with spontaneous polarization electric field the most according to claim 1, is characterized by: described p-type
The material of Ohmic electrode 107 and N-shaped Ohmic electrode 108 is any one of Al, Ni, Au or Ti metal or by above multiple gold
Belong to the combination electrode material constituted.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107240615A (en) * | 2017-05-15 | 2017-10-10 | 东南大学 | A kind of ultraviolet detector with nonpolar absorbed layer |
| CN108198893A (en) * | 2018-01-30 | 2018-06-22 | 中国科学院半导体研究所 | A kind of nitrogen face polar InGaN solar battery structures |
| CN108269877A (en) * | 2018-01-30 | 2018-07-10 | 中国科学院半导体研究所 | A kind of InGaN solar battery structures |
| CN108269866A (en) * | 2018-01-30 | 2018-07-10 | 中国科学院半导体研究所 | A kind of mixing polarity InGaN solar battery structures |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107240615A (en) * | 2017-05-15 | 2017-10-10 | 东南大学 | A kind of ultraviolet detector with nonpolar absorbed layer |
| CN107240615B (en) * | 2017-05-15 | 2019-03-12 | 东南大学 | A kind of ultraviolet detector with nonpolar absorbed layer |
| CN108198893A (en) * | 2018-01-30 | 2018-06-22 | 中国科学院半导体研究所 | A kind of nitrogen face polar InGaN solar battery structures |
| CN108269877A (en) * | 2018-01-30 | 2018-07-10 | 中国科学院半导体研究所 | A kind of InGaN solar battery structures |
| CN108269866A (en) * | 2018-01-30 | 2018-07-10 | 中国科学院半导体研究所 | A kind of mixing polarity InGaN solar battery structures |
| CN108269866B (en) * | 2018-01-30 | 2020-02-21 | 中国科学院半导体研究所 | Mixed polarity InGaN solar cell structure |
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Address after: 210093 Nanjing University Science Park, 22 Hankou Road, Gulou District, Nanjing City, Jiangsu Province Patentee after: Southeast University Address before: 210033 Xigang office, Qixia District, Nanjing, Jiangsu, No. 8, Qi Min Dong Road, Xingshan City, Patentee before: Southeast University |