CN106298990A - A kind of nonpolar solaode utilizing spontaneous polarization electric field - Google Patents

A kind of nonpolar solaode utilizing spontaneous polarization electric field Download PDF

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CN106298990A
CN106298990A CN201610968769.1A CN201610968769A CN106298990A CN 106298990 A CN106298990 A CN 106298990A CN 201610968769 A CN201610968769 A CN 201610968769A CN 106298990 A CN106298990 A CN 106298990A
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electric field
layer
spontaneous polarization
solaode
polarization electric
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CN106298990B (en
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张�雄
吴自力
崔平
崔一平
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Southeast University
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/022408Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract

The invention provides a kind of nonpolar solaode with spontaneous polarization electric field.Including the most successively: substrate, GaN nucleating layer, undoped GaN cushion, n-type GaN layer, InGaN absorbed layer, p-type GaN layer, wherein all nitride epitaxial layers in addition to substrate are constituted by non-polar material;P-type GaN layer is drawn p-type Ohmic electrode, n-type GaN layer is drawn N-shaped Ohmic electrode.Owing to there is the spontaneous polarization electric field of the single direction being parallel to extension aspect in non-polar epitaxial aspect, and p-type and N-shaped GaN Ohmic electrode lay respectively at the positive and negative two ends of spontaneous polarization electric field, therefore the existence of spontaneous polarization electric field have beneficially improve photo-generated carrier electron hole pair in solaode be laterally i.e. parallel to battery surface be spatially separating efficiency, and this spontaneous polarization electric field also can accelerate to be transported at positive and negative electrode hole and the electronics of separation respectively, thus is greatly improved the generation efficiency of photoelectric current.

Description

A kind of nonpolar solaode utilizing spontaneous polarization electric field
Technical field
The present invention relates to semiconductor photoelectronic device field, be specifically related to a kind of have spontaneous polarization electric field nonpolar too Sun can battery.
Background technology
InGaN material has a high potential in terms of preparing high performance solar batteries.First, InxGa1-xN material is direct band gap Semi-conducting material, by the In component in regulation ternary compound InGaN material, it is possible to achieve its band-gap energy 0.7~ Consecutive variations between 3.4eV, its absorption spectrum almost with solar spectrum Perfect Matchings [1].Secondly, InGaN material also has height The advantages such as absorptance, high electron mobility, high rigidity, high temperature resistant, radioprotective, are the ideals realizing full spectrum solaode Material, is with a wide range of applications and huge researching value [2].
But, the electricity conversion of the GaN base solaode of existing quantum well structure is the most relatively low, such as Fig. 2 institute Show.Polarized electric field in SQW is the key factor causing the electricity conversion of solaode low.Due to fibre There is the strongest polarized electric field in the structure GaN-based material of zinc ore, its intensity is up to MV/cm magnitude, and existing along (0001) direction Polar GaN base solar cell, its polarized electric field direction is in opposite direction with p-n junction built in field, can cause built in field Compensating, in causing active area, clean electric field reduces, and is unfavorable for effective collection of photo-generated carrier;Simultaneously in polarity solaode Polarized electric field can make quantum well region energy band run-off the straight, produces additional barriers, hinders transporting, to the sun of photo-generated carrier The performance of energy battery produces very adverse influence [3].
For improve solaode electricity conversion, prior art be typically employed in device back make reflecting mirror, Make antireflective film at device surface or use the technology such as InGaN/GaN superlattice structure to improve the material absorption efficiency to light [4,5].But use these technology still cannot fundamentally solve polarized electric field in polarity device and built-in field compensation is made The problem that the photoelectric transformation efficiency become declines.Fundamentally to solve this problem, polarized electric field direction need to be made built-in with p-n junction The direction of electric field is identical or vertical, compensates so that p-n junction built in field is not formed by it, but conventional polar device obviously cannot Meet this requirement.Therefore, research and develop non-polar GaN based solar battery, for improving the electricity conversion tool of solaode There is very important meaning.
List of references:
1.Matsuoka,T.,et al.,Optical bandgap energy of wurtzite InN.Applied Physics Letters,2002.81(7):p.1246-1248.
2.Jani,O.,et al.,Design and characterization of GaN/InGaN solar cells.Applied Physics Letters,2007.91(13):p.132117.
3.Chang,J.-Y.,et al.,Simulation of high-efficiency GaN/InGaN pin solar cell with suppressed polarization and barrier effects.IEEE Journal of Quantum Electronics,2013.49(1):p.17-23.
4.Chen,X.,et al.,Growth,fabrication,and characterization of InGaN solar cells.physica status solidi(a),2008.205(5):p.1103-1105.
5.Tsai,C.-L.,et al.,Substrate-free large gap InGaN solar cells with bottom reflector.Solid-State Electronics,2010.54(5):p.541-544.
Summary of the invention
Technical problem: the problem existing for polarity quantum well structure solaode prepared by above-mentioned prior art, The invention provides a kind of nonpolar solaode with spontaneous polarization electric field.Use this kind of structure both can be fundamentally Solve the polarized electric field problem to the compensation of p-n junction built in field in conventional polar quantum well structure solaode, simultaneously profit Can accelerate again to be transported at positive and negative electrode hole and the electronics of separation respectively with this spontaneous polarization electric field, thus greatly carry The photoelectric efficiency of high solar battery.
Technical scheme: the present invention recklessly has the nonpolar solaode of spontaneous polarization electric field and includes setting the most successively The substrate put, GaN nucleating layer, undoped GaN cushion, n-type GaN layer, InGaN absorbed layer, p-type GaN layer, in p-type GaN layer Draw p-type Ohmic electrode, n-type GaN layer is drawn N-shaped Ohmic electrode.
Wherein;
Described GaN nucleating layer, undoped GaN cushion, n-type GaN layer, InGaN absorbed layer, p-type GaN layer are by nonpolar Material is constituted.
Described p-type Ohmic electrode and N-shaped Ohmic electrode lay respectively at the positive and negative two ends of spontaneous polarization electric field.
Described substrate is polarity, semi-polarity or the sapphire of nonpolar orientation, carborundum, zinc oxide, gallium nitride, nitridation Aluminum.
The thickness of described GaN nucleating layer is 15-50nm, and the thickness of undoped GaN cushion is 50-5000nm, N-shaped GaN The thickness that thickness is 200-5000nm, InGaN absorbed layer of layer is 20-2000nm, and the thickness of p-type GaN layer is 100-1000nm.
Described InGaN absorbed layer is monolayer InGaN epitaxial layer structure, or InGaN/GaN multi-quantum pit structure, Qi Zhongliang The sub-a width of 2-10nm of trap trap, a width of 5-20nm of potential barrier, repetition period number is 1-50.
The material of described p-type Ohmic electrode and N-shaped Ohmic electrode be any one of Al, Ni, Au or Ti metal or by The combination electrode material that above various metals is constituted.
Beneficial effect: the present invention is to provide a kind of nonpolar solaode with spontaneous polarization electric field.Use non- Polar material can fundamentally avoid the quantum well region polarized electric field compensating effect to p-n built in field, is conducive to improving The longitudinal direction of photo-generated carrier is i.e. perpendicular to battery surface separation efficiency.Furthermore, spontaneous polarization electric field in non-polar material Existence have beneficially improve photo-generated carrier in solaode laterally being i.e. parallel to battery surface is spatially separating efficiency, and Owing to p-type and N-shaped GaN Ohmic electrode lay respectively at the positive and negative two ends of spontaneous polarization electric field, so this spontaneous polarization electric field also may be used Accelerate to be transported at positive and negative electrode hole and the electronics of separation respectively, thus be greatly improved the generation efficiency of photoelectric current, therefore Have great importance for promoting the electricity conversion of solaode.
Accompanying drawing explanation
Fig. 1 is the Rotating fields schematic diagram of a kind of nonpolar solaode with spontaneous polarization electric field.
Figure has: substrate 101, GaN nucleating layer 102, undoped GaN cushion 103, n-type GaN layer 104, InGaN absorb Layer 105, p-type GaN layer 106, p-type Ohmic electrode 107, N-shaped Ohmic electrode 108.
Fig. 2 is the Rotating fields schematic diagram of polarity solaode prepared by prior art.
Figure has: substrate 201, GaN nucleating layer 202, undoped GaN cushion 203, n-type GaN layer 204, InGaN absorb Layer 205, p-type GaN layer 206, p-type Ohmic electrode 207, N-shaped Ohmic electrode 208.
Detailed description of the invention
For achieving the above object, the present invention uses following technical proposals:
The present invention has the substrate that the nonpolar solaode of spontaneous polarization electric field includes setting gradually from bottom to top 101, GaN nucleating layers 102, undoped GaN cushion 103, n-type GaN layer 104, InGaN absorbed layer 105, p-type GaN layer 106, Draw p-type Ohmic electrode 107 in p-type GaN layer, n-type GaN layer is drawn N-shaped Ohmic electrode 108.
Preferably, described GaN nucleating layer 102, undoped GaN cushion 103, n-type GaN layer 104, InGaN absorbed layer 105, p-type GaN layer 106 is constituted by non-polar material.
Preferably, described p-type Ohmic electrode 107 and N-shaped Ohmic electrode 108 lay respectively at positive and negative the two of spontaneous polarization electric field End.
Preferably, described substrate 101 can be polarity, semi-polarity and the sapphire of nonpolar orientation, carborundum, oxidation The materials such as zinc, gallium nitride, aluminium nitride.
The thickness of preferred described GaN nucleating layer 102 is 15-50nm, and the thickness of undoped GaN cushion 103 is 50- 5000nm, the thickness of n-type GaN layer 104 be the thickness of 200-5000nm, InGaN absorbed layer 105 be 20-2000nm, p-type GaN layer The thickness of 106 is 100-1000nm.
Described InGaN absorbed layer 105 can be monolayer InGaN epitaxial layer structure, it is also possible to be InGaN/GaN MQW Structure, the wherein a width of 2-10nm of SQW trap, a width of 5-20nm of potential barrier, repetition period number is 1-50.
Preferably, the material of described p-type Ohmic electrode 107 and N-shaped Ohmic electrode 108 can be Al, in Ni, Au, Ti Any metal or the combination electrode material being made up of various metals.
The foregoing is only the better embodiment of the present invention, protection scope of the present invention with above-mentioned embodiment is not Limit, as long as those of ordinary skill in the art modify or change according to the equivalence that disclosed content is done, all should include power in In profit protection domain described in claim.

Claims (7)

1. a nonpolar solaode with spontaneous polarization electric field, it is characterised in that: under this solaode includes certainly The substrate (101) set gradually on and, GaN nucleating layer (102), undoped GaN cushion (103), n-type GaN layer (104), InGaN absorbed layer (105), p-type GaN layer (106), draw p-type Ohmic electrode (107), in p-type GaN layer in n-type GaN layer Draw N-shaped Ohmic electrode (108).
The nonpolar solaode with spontaneous polarization electric field the most according to claim 1, is characterized by: described GaN Nucleating layer (102), undoped GaN cushion (103), n-type GaN layer (104), InGaN absorbed layer (105), p-type GaN layer (106) Constituted by non-polar material.
The nonpolar solaode with spontaneous polarization electric field the most according to claim 1, is characterized by: described p-type Ohmic electrode 107 and N-shaped Ohmic electrode 108 lay respectively at the positive and negative two ends of spontaneous polarization electric field.
The nonpolar solaode with spontaneous polarization electric field the most according to claim 1, is characterized by: described substrate (101) it is polarity, semi-polarity or the sapphire of nonpolar orientation, carborundum, zinc oxide, gallium nitride, aluminium nitride.
The nonpolar solaode with spontaneous polarization electric field the most according to claim 1, is characterized by: described GaN The thickness of nucleating layer (102) is 15-50nm, and the thickness of undoped GaN cushion (103) is 50-5000nm, n-type GaN layer (104) thickness be the thickness of 200-5000nm, InGaN absorbed layer (105) be 20-2000nm, the thickness of p-type GaN layer (106) For 100-1000nm.
The nonpolar solaode with spontaneous polarization electric field the most according to claim 1, is characterized by: described InGaN absorbed layer (105) is monolayer InGaN epitaxial layer structure, or InGaN/GaN multi-quantum pit structure, wherein SQW trap A width of 2-10nm, a width of 5-20nm of potential barrier, repetition period number is 1-50.
The nonpolar solaode with spontaneous polarization electric field the most according to claim 1, is characterized by: described p-type The material of Ohmic electrode 107 and N-shaped Ohmic electrode 108 is any one of Al, Ni, Au or Ti metal or by above multiple gold Belong to the combination electrode material constituted.
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107240615A (en) * 2017-05-15 2017-10-10 东南大学 A kind of ultraviolet detector with nonpolar absorbed layer
CN108198893A (en) * 2018-01-30 2018-06-22 中国科学院半导体研究所 A kind of nitrogen face polar InGaN solar battery structures
CN108269877A (en) * 2018-01-30 2018-07-10 中国科学院半导体研究所 A kind of InGaN solar battery structures
CN108269866A (en) * 2018-01-30 2018-07-10 中国科学院半导体研究所 A kind of mixing polarity InGaN solar battery structures

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103094378A (en) * 2013-01-28 2013-05-08 中国科学院半导体研究所 Solar cell containing variable In component InGaN/GaN multilayer quantum well structure
CN104201220A (en) * 2014-08-26 2014-12-10 中国科学院半导体研究所 Indium gallium nitride or gallium nitride multi-quantum-well solar cell comprising low-temperature insert layer
CN104393088A (en) * 2014-10-29 2015-03-04 中国科学院半导体研究所 InGaN/AlInGaN multi-quantum well solar cell structure
US20150287848A1 (en) * 2013-06-17 2015-10-08 Young-Kwon Jun Solar cell and method of manufacturing therefor
CN205039161U (en) * 2015-10-26 2016-02-17 南京交通职业技术学院 InGaN solar cell

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103094378A (en) * 2013-01-28 2013-05-08 中国科学院半导体研究所 Solar cell containing variable In component InGaN/GaN multilayer quantum well structure
US20150287848A1 (en) * 2013-06-17 2015-10-08 Young-Kwon Jun Solar cell and method of manufacturing therefor
CN104201220A (en) * 2014-08-26 2014-12-10 中国科学院半导体研究所 Indium gallium nitride or gallium nitride multi-quantum-well solar cell comprising low-temperature insert layer
CN104393088A (en) * 2014-10-29 2015-03-04 中国科学院半导体研究所 InGaN/AlInGaN multi-quantum well solar cell structure
CN205039161U (en) * 2015-10-26 2016-02-17 南京交通职业技术学院 InGaN solar cell

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ANIRUDDHA SINGH KUSHWAHA, ET AL.: "Optimization of p-GaN/InGaN/n-GaN double heterojunction P-I-N solar cell for high efficiency: Simulation Approach", 《INTERNATIONAL JOURNAL OF PHOTOENERGY》 *
J. BAI,ET AL.: "(11-22) semipolar InGaN emitters from green to amber on overgrown GaN on micro-rod templates", 《APPLIED PHYSICS LETTERS》 *
TATSURO NAKAO, ET AL.: "Fabrication of Nonpolar a-Plane Nitride-Based Solar Cell on r-Plane Sapphire Substrate", 《APPLIED PHYSICS EXPRESS》 *

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107240615A (en) * 2017-05-15 2017-10-10 东南大学 A kind of ultraviolet detector with nonpolar absorbed layer
CN107240615B (en) * 2017-05-15 2019-03-12 东南大学 A kind of ultraviolet detector with nonpolar absorbed layer
CN108198893A (en) * 2018-01-30 2018-06-22 中国科学院半导体研究所 A kind of nitrogen face polar InGaN solar battery structures
CN108269877A (en) * 2018-01-30 2018-07-10 中国科学院半导体研究所 A kind of InGaN solar battery structures
CN108269866A (en) * 2018-01-30 2018-07-10 中国科学院半导体研究所 A kind of mixing polarity InGaN solar battery structures
CN108269866B (en) * 2018-01-30 2020-02-21 中国科学院半导体研究所 Mixed polarity InGaN solar cell structure

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