CN106129165B - A heterojunction solar cell with double-sided field-assisted effect - Google Patents
A heterojunction solar cell with double-sided field-assisted effect Download PDFInfo
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Abstract
Description
技术领域technical field
本发明涉及一种太阳电池,具体涉及一种含有双边场助效应的异质结太阳电池。The invention relates to a solar cell, in particular to a heterojunction solar cell with a bilateral field-assisted effect.
背景技术Background technique
III-V族化合物太阳电池因其转换效率高、抗辐照能力强、温度特性好等优点,被公认为是新一代高性能长寿命空间主电源。随着化合物半导体生长技术(如金属有机化合物汽相外延——MOCVD) 的不断进步,III-V族太阳电池的效率得到了很大提高。目前,单结GaAs电池效率已经超过29%,键合五结III-V族太阳电池效率已经达到36%。实现高效五结-六结太阳电池得关键点之一是获得带隙在1.7-1.8eV即波长在690nm-730nm的第二结,通常该吸收波段材料采用Al组分在20-28%的AlGaAs,众所周知的是高Al组分化合物通常具有比较低的载流子有效寿命,尤其是n型掺杂所形成的DX中心缺陷是非常严重的复合中心。III-V compound solar cells are recognized as a new generation of high-performance and long-life space main power sources due to their high conversion efficiency, strong radiation resistance, and good temperature characteristics. With the continuous improvement of compound semiconductor growth technology (such as metal organic compound vapor phase epitaxy - MOCVD), the efficiency of III-V solar cells has been greatly improved. At present, the efficiency of single-junction GaAs cells has exceeded 29%, and the efficiency of bonded five-junction III-V solar cells has reached 36%. One of the key points to achieve high-efficiency five-junction-six-junction solar cells is to obtain the second junction with a band gap of 1.7-1.8eV, that is, a wavelength of 690nm-730nm. Usually, the material for this absorption band is AlGaAs with an Al composition of 20-28%. It is well known that compounds with high Al composition usually have relatively low carrier effective lifetime, especially the DX center defect formed by n-type doping is a very serious recombination center.
在通常的异质结太阳电池中,如图1所示没有在窄带隙发射区中采用场助结构,或者如图2所示采用了含有未掺杂层的场助结构,而在宽带隙基区中没有采用场助结构,这都降低了载流子的输运能力尤其是窄带隙发射区的空穴向宽带隙基区的跃迁。In a typical heterojunction solar cell, as shown in Figure 1, no field-assisted structure is used in the narrow bandgap emission region, or as shown in Figure 2, a field-assisted structure with an undoped layer is used, while in the wide bandgap base The field-assisted structure is not used in the region, which reduces the transport capacity of carriers, especially the transition of holes from the narrow-bandgap emitter region to the wide-bandgap base region.
发明内容Contents of the invention
本发明的目的是提供一种含有双边场助效应的异质结太阳电池,该电池克服已有了技术载流子的输运能力低,尤其是窄带隙材料区的空穴向宽带隙基区的跃迁能力低的问题,通过双场助结构,提高载流子的输运能力和跃迁能力,提高太阳能电池的利用率。The purpose of the present invention is to provide a heterojunction solar cell with double-sided field-assisted effect, which overcomes the low transport capacity of the existing technology carriers, especially the holes from the narrow bandgap material region to the wide bandgap base region For the problem of low transition ability, the double-field-assisted structure can improve the carrier transport ability and transition ability, and improve the utilization rate of solar cells.
为了达到上述目的,本发明提供了一种含有双边场助效应的异质结太阳电池,该电池包含依次设置的宽带隙材料区、窄带隙材料区和窗口层区域。In order to achieve the above purpose, the present invention provides a heterojunction solar cell with double-sided field-assisted effect, which includes a wide bandgap material region, a narrow bandgap material region and a window layer region arranged in sequence.
其中,所述的宽带隙材料区包含依次设置的宽带隙基区和未掺杂区。Wherein, the wide bandgap material region includes a wide bandgap base region and an undoped region arranged in sequence.
其中,所述的宽带隙基区和未掺杂区形成了第一同质结,该第一同质结具有场助结构。Wherein, the wide bandgap base region and the undoped region form a first homojunction, and the first homojunction has a field-assisted structure.
其中,所述的窄带隙材料区和窗口层区域形成了第一异质结,该第一异质结具有场助结构。Wherein, the narrow bandgap material region and the window layer region form a first heterojunction, and the first heterojunction has a field-assisted structure.
其中,所述的宽带隙材料区和窄带隙材料区形成了第二异质结。Wherein, the wide bandgap material region and the narrow bandgap material region form a second heterojunction.
其中,所述的宽带隙基区采用i/p-/p+型AlyGa1-yAs,0.24 ≤y ≤0.3,厚度为10~3000nm,p型掺杂浓度从1016到1018cm-3。Wherein, the wide bandgap base region adopts i/p-/p+ type Al y Ga 1-y As, 0.24 ≤ y ≤ 0.3, the thickness is 10~3000nm, and the p-type doping concentration is from 10 16 to 10 18 cm - 3 .
其中,所述的窄带隙材料区采用n+/n-型AlxGa1-xAs,x ≤0.2,厚度为10~100nm,n型掺杂浓度为1016cm-3到1018cm-3。Wherein, the narrow band gap material region adopts n+/n- type Al x Ga 1-x As, x ≤ 0.2, the thickness is 10~100nm, and the n-type doping concentration is 10 16 cm -3 to 10 18 cm -3 .
其中,所述的窗口层区域采用采用n型的Al(Ga)InP或AlzGa1-zAs,z≥0.4,厚度为10~50nm,n型掺杂浓度为1017~1018cm-3。Wherein, the window layer region is made of n-type Al(Ga)InP or Al z Ga 1-z As, z≥0.4, a thickness of 10-50 nm, and an n-type doping concentration of 10 17 ~10 18 cm - 3 .
所述的窄带隙材料区包含依次设置的弱n型掺杂区和重n型掺杂区,该弱n型掺杂区和重n型掺杂区的n型掺杂浓度不同。The narrow bandgap material region includes a weakly n-type doped region and a heavily n-type doped region arranged in sequence, and the n-type doping concentrations of the weakly n-type doped region and the heavily n-type doped region are different.
所述的弱n型掺杂区和重n型掺杂区的厚度均为10~50nm。The thicknesses of the weakly n-type doped region and the heavily n-type doped region are both 10-50 nm.
所述的弱n型掺杂区和重n型掺杂区形成了第二同质结,该第二同质结具有场助结构。The weakly n-type doped region and the heavily n-type doped region form a second homojunction, and the second homojunction has a field-assisted structure.
所述的第二同质结和第一异质结的场助结构均为n+/n-型场助。The field aid structures of the second homojunction and the first heterojunction are both n+/n-type field aid.
所述的第一同质结的场助结构为i/p-型场助。The field-assisted structure of the first homojunction is an i/p-type field-assisted structure.
所述的宽带隙基区和窄带隙材料区的掺杂浓度分布函数为梯度、线性、多项式或指数形式中的任意一种。The doping concentration distribution function of the wide bandgap base region and the narrow bandgap material region is any one of gradient, linear, polynomial or exponential form.
所述的未掺杂区采用AlyGa1-yAs,0.24 ≤y ≤0.3,厚度为10~100nm,未掺杂。The undoped region is made of Al y Ga 1-y As, 0.24 ≤ y ≤ 0.3, the thickness is 10-100nm, and it is not doped.
所述的太阳电池还包含设置在宽带隙基区侧的背场。The solar cell also includes a back field arranged on the side of the wide bandgap base region.
所述的背场采用n型的AlzGa1-zAs,z≥0.4,厚度为10~50mm,p型掺杂浓度为1017~1018cm-3。The back field adopts n-type AlzGa1 - zAs, z≥0.4 , thickness is 10-50mm, and p-type doping concentration is 10 17 -10 18 cm -3 .
本发明提供的一种含有双边场助效应的异质结太阳电池,解决了已有技术存在的载流子的输运能力和跃迁能力低的问题,具有以下优点:A heterojunction solar cell with bilateral field-assisted effect provided by the present invention solves the problems of low carrier transport capacity and transition capacity in the prior art, and has the following advantages:
该太阳电池的宽带隙材料区和窄带隙材料区形成了第二异质结,并且在第二异质结的两侧形成i/p-型场助和n+/n-型场助,使该太阳电池具有双场助效应,从而电池效率提高;通过合理设置太阳能电池不同材料区位置、材料中p型或n型掺杂的浓度以及不同区域的厚度,使窄带隙材料区和宽带隙材料区所形成的异质结通过两边的场助结构里的电场加速载流子,提高了载流子的输运能力,同时增强了载流子跨越异质结势垒的能力;通过将宽带隙基区和窄带隙材料区的掺杂浓度分布函数为梯度、线性、多项式或指数形式,使得同质结和异质结的浓度变化缓慢,能够提高载流子传输效率。The wide bandgap material region and the narrow bandgap material region of the solar cell form a second heterojunction, and i/p-type field aids and n+/n-type field aids are formed on both sides of the second heterojunction, so that the The solar cell has a double field assist effect, so that the efficiency of the cell is improved; by reasonably setting the positions of different material regions of the solar cell, the concentration of p-type or n-type doping in the material, and the thickness of different regions, the narrow-bandgap material region and the wide-bandgap material region The formed heterojunction accelerates the carriers through the electric field in the field-assisted structure on both sides, which improves the transport capacity of the carriers, and at the same time enhances the ability of the carriers to cross the heterojunction barrier; The doping concentration distribution function of the region and the narrow bandgap material region is in gradient, linear, polynomial or exponential form, so that the concentration of homojunction and heterojunction changes slowly, and the carrier transport efficiency can be improved.
附图说明Description of drawings
图1为已有技术的窄带隙发射区中没有采用场助结构的异质结太阳电池的能带图(Ec:导带底能量,Ef:费米能级,Ev:价带顶能量)。Figure 1 is an energy band diagram of a heterojunction solar cell without a field-assisted structure in the narrow bandgap emission region of the prior art (Ec: conduction band bottom energy, Ef: Fermi level, Ev: valence band top energy).
图2为已有技术的窄带隙区域含有未掺杂层的场助结构的异质结太阳电池能带图。Fig. 2 is an energy band diagram of a heterojunction solar cell with a field-assisted structure containing an undoped layer in the narrow bandgap region of the prior art.
图3为本发明的一种含有双边场助效应的异质结太阳电池能带图。Fig. 3 is an energy band diagram of a heterojunction solar cell with bilateral field-assisted effect according to the present invention.
图4为本发明提供的含有双边场助效应的异质结太阳电池的优选实施例结构示意图。Fig. 4 is a schematic structural diagram of a preferred embodiment of a heterojunction solar cell with a double-sided field-assisted effect provided by the present invention.
图5为本发明提供的含有双边场助效应的异质结太阳电池的优选实施例结构示意图。Fig. 5 is a schematic structural diagram of a preferred embodiment of a heterojunction solar cell with a double-sided field-assisted effect provided by the present invention.
具体实施方式detailed description
以下结合附图和实施例对本发明的技术方案做进一步的说明。The technical solutions of the present invention will be further described below in conjunction with the drawings and embodiments.
如图4所示,本发明用于提供一种含有双边场助效应的异质结太阳电池,本发明提供了一种含有双边场助效应的异质结太阳电池,该电池包含依次设置的宽带隙材料区10、窄带隙材料区20和窗口层区域30。As shown in Figure 4, the present invention is used to provide a heterojunction solar cell containing a double-sided field-assisted effect. The present invention provides a heterojunction solar cell containing a double-sided field-assisted effect. Gap material region 10 , narrow bandgap material region 20 and window layer region 30 .
宽带隙材料区10包含依次设置的宽带隙基区11和未掺杂区12。The wide bandgap material region 10 includes a wide bandgap base region 11 and an undoped region 12 arranged in sequence.
宽带隙基区11和未掺杂区12形成了第一同质结,该第一同质结具有场助结构。The wide bandgap base region 11 and the undoped region 12 form a first homojunction having a field-assisted structure.
窄带隙材料区20和窗口层区域30形成了第一异质结,该第一异质结具有场助结构。The narrow bandgap material region 20 and the window layer region 30 form a first heterojunction having a field-assisted structure.
宽带隙材料区10和窄带隙材料区20形成了第二异质结。The region of wide bandgap material 10 and the region of narrow bandgap material 20 form a second heterojunction.
宽带隙基区11采用i/p-/p+型AlyGa1-yAs,0.24 ≤y ≤0.3,厚度为10~3000nm,p型掺杂浓度从1016到1018cm-3。如图3所示,该宽带隙基区11的导带底和价带顶之间的能量差较大。The wide bandgap base region 11 is made of i/p-/p+ type Al y Ga 1-y As, 0.24 ≤ y ≤ 0.3, the thickness is 10-3000 nm, and the p-type doping concentration is from 10 16 to 10 18 cm -3 . As shown in FIG. 3 , the energy difference between the bottom of the conduction band and the top of the valence band of the wide bandgap base region 11 is relatively large.
窄带隙材料区20采用n+/n-型AlxGa1-xAs,x ≤0.2,厚度为10~100nm,n型掺杂浓度为1016cm-3到1018cm-3。如图3所示,该窄带隙材料区20的导带底和价带顶之间的能量差较小。The narrow bandgap material region 20 is made of n+/n- type Al x Ga 1-x As, x ≤ 0.2, a thickness of 10-100 nm, and an n-type doping concentration of 10 16 cm -3 to 10 18 cm -3 . As shown in FIG. 3 , the energy difference between the bottom of the conduction band and the top of the valence band of the narrow bandgap material region 20 is small.
窗口层区域30采用采用n型的Al(Ga)InP或AlzGa1-zAs,z≥0.4,厚度为10~50nm,n型掺杂浓度为1017~1018cm-3。The window layer region 30 is made of n-type Al(Ga)InP or AlzGa1 - zAs, z≥0.4 , the thickness is 10-50nm, and the n-type doping concentration is 10 17 -10 18 cm -3 .
窄带隙材料区20包含依次设置的弱n型掺杂区21和重n型掺杂区22,该弱n型掺杂区21和重n型掺杂区22的n型掺杂浓度不同。The narrow bandgap material region 20 includes a weakly n-type doped region 21 and a heavily n-type doped region 22 arranged in sequence, and the n-type doping concentrations of the weakly n-type doped region 21 and the heavily n-type doped region 22 are different.
弱n型掺杂区21和重n型掺杂区22的厚度均为10~50nm。The thicknesses of the weakly n-type doped region 21 and the heavily n-type doped region 22 are both 10-50 nm.
弱n型掺杂区21和重n型掺杂区22形成了第二同质结,该第二同质结具有场助结构。The weakly n-type doped region 21 and the heavily n-type doped region 22 form a second homojunction, and the second homojunction has a field-assisted structure.
第二同质结和第一异质结的场助结构均为n+/n-型场助。该n+/n-型场助增强了低迁移率含铝化合物的空穴收集效率。The field aid structures of the second homojunction and the first heterojunction are both n+/n-type field aids. The n+/n-type field assistance enhances the hole collection efficiency of low-mobility aluminum-containing compounds.
第一同质结的场助结构为i/p-型场助。该i/p-型场助效应增强了载流子跨越异质结势垒的几率,从而提高短路电流密度。The field aid structure of the first homojunction is i/p-type field aid. The i/p-type field-assisted effect enhances the probability of carriers crossing the heterojunction barrier, thereby increasing the short-circuit current density.
宽带隙基区11和窄带隙材料区20的掺杂浓度分布函数为梯度、线性、多项式或指数形式中的任意一种。The doping concentration distribution function of the wide bandgap base region 11 and the narrow bandgap material region 20 is any one of gradient, linear, polynomial or exponential form.
未掺杂区12采用AlyGa1-yAs,0.24 ≤y ≤0.3,厚度为10~100nm,未掺杂。The undoped region 12 is made of AlyGa1 - yAs, 0.24≤y≤0.3, with a thickness of 10-100nm, and is undoped.
太阳电池还包含设置在宽带隙基区11侧的背场40。The solar cell also includes a back field 40 disposed on the side of the wide bandgap base region 11 .
背场40采用n型的AlzGa1-zAs,z≥0.4,厚度为10~50mm,p型掺杂浓度为1017~1018cm-3。The back field 40 is made of n-type Al z Ga 1-z As, z≥0.4, the thickness is 10-50mm, and the p-type doping concentration is 10 17 -10 18 cm -3 .
实施例1Example 1
以五结太阳电池中的带隙在1.7-1.8eV即波长在690nm-730nm的子太阳电池为例,如图4所示,该电池包含依次设置的背场40、宽带隙基区11、未掺杂区12、弱n型掺杂区21、重n型掺杂区22和窗口层区域30。Taking a sub-solar cell with a bandgap of 1.7-1.8eV in a five-junction solar cell as an example, as shown in FIG. 4, the cell includes a back field 40, a wide bandgap base region 11, doped region 12 , weakly n-type doped region 21 , heavily n-type doped region 22 and window layer region 30 .
背场40采用Al0.4Ga0.6As,厚度为10~50nm,p型掺杂浓度为1018 cm-3。The back field 40 is made of Al 0.4 Ga 0.6 As with a thickness of 10-50 nm and a p-type doping concentration of 10 18 cm -3 .
宽带隙基区11采用Al0.26Ga0.74As,厚度为1000~3000nm,p型掺杂浓度为1016 cm-3。The wide bandgap base region 11 is made of Al 0.26 Ga 0.74 As with a thickness of 1000-3000 nm and a p-type doping concentration of 10 16 cm -3 .
未掺杂区12采用Al0.26Ga0.74As,厚度为10~100nm,未掺杂。The undoped region 12 is made of Al 0.26 Ga 0.74 As with a thickness of 10-100 nm and is not doped.
弱n型掺杂区21采用Al0.2Ga0.8As,厚度为10~50nm,n型掺杂浓度为1017 cm-3。The weakly n-type doped region 21 is made of Al 0.2 Ga 0.8 As with a thickness of 10-50 nm and an n-type doping concentration of 10 17 cm -3 .
重n型掺杂区22采用Al0.2Ga0.8As,厚度为10~50nm,n型掺杂浓度为1018 cm-3。The heavily n-type doped region 22 is made of Al 0.2 Ga 0.8 As with a thickness of 10-50 nm and an n-type doping concentration of 10 18 cm -3 .
弱n型掺杂区21和重n型掺杂区22组成窄带隙材料区20。The weakly n-type doped region 21 and the heavily n-type doped region 22 form a narrow bandgap material region 20 .
窗口层区域30采用Al0.6Ga0.4As, 厚度为10~100nm,n型掺杂浓度为1018 cm-3。The window layer region 30 is made of Al 0.6 Ga 0.4 As with a thickness of 10-100 nm and an n-type doping concentration of 10 18 cm -3 .
该子太阳电池结构采用低压金属有机物化学气相沉积(MOCVD)设备生长。本子太阳电池结构中,区域12/区域11形成第一同质结,构成i/p-型场助结构,区域22/区域21形成第二同质结,构成n+/n-型场助结构。窄带隙材料区20和宽带隙基区11形成第二异质结,上述的i/p-型场助结构和n+/n-型场助结构均对第二异质结形成场助效应,通过两边的场助结构里的电场加速了载流子的运输能力。The sub-solar cell structure was grown using low-pressure metal-organic chemical vapor deposition (MOCVD) equipment. In this solar cell structure, the region 12/region 11 forms a first homojunction, forming an i/p-type field-assisted structure, and the region 22/region 21 forms a second homojunction, forming an n+/n-type field-assisted structure. The narrow bandgap material region 20 and the wide bandgap base region 11 form a second heterojunction, and the above-mentioned i/p-type field-assisted structure and n+/n-type field-assisted structure both form a field-assisted effect on the second heterojunction, through The electric field in the field-assisted structure on both sides accelerates the carrier transport ability.
实验结果表明,采用本发明结构的太阳电池光谱响应在400-600nm的短中波段区间内,皆比同样实验条件的其它结构电池提高5%-10%,开路电压提高10-30mV。Experimental results show that the spectral response of the solar cell adopting the structure of the present invention is 5%-10% higher than that of other structural cells under the same experimental conditions in the short and middle wave range of 400-600nm, and the open circuit voltage is increased by 10-30mV.
实施例2Example 2
依然以五结太阳电池中的带隙在1.7-1.8eV即波长在690nm-730nm的子太阳电池为例,实现如实例1相同的器件性能还可以有如图5所示的结构,该包括:背场40、宽带隙基区11、未掺杂区12、窄带隙材料区20以及窗口层区域30。Still taking a sub-solar cell with a band gap of 1.7-1.8eV in the five-junction solar cell, that is, a sub-solar cell with a wavelength of 690nm-730nm as an example, to achieve the same device performance as in Example 1, the structure shown in Figure 5 can also be used, which includes: Field 40 , wide bandgap base region 11 , undoped region 12 , narrow bandgap material region 20 and window layer region 30 .
背场40采用Al0.4Ga0.6As,厚度为10~50nm,p型掺杂浓度为1018 cm-3。The back field 40 is made of Al 0.4 Ga 0.6 As with a thickness of 10-50 nm and a p-type doping concentration of 10 18 cm -3 .
宽带隙基区11采用Al0.26Ga0.74As,厚度为1000~3000nm,p型掺杂浓度以线性、多项式或指数的形式从1018变化到1016 cm-3。The wide bandgap base region 11 is made of Al 0.26 Ga 0.74 As with a thickness of 1000~3000nm, and the p-type doping concentration changes from 10 18 to 10 16 cm -3 in a linear, polynomial or exponential form.
未掺杂区12采用Al0.26Ga0.74As,厚度为10~100nm,未掺杂。The undoped region 12 is made of Al 0.26 Ga 0.74 As with a thickness of 10-100 nm and is not doped.
窄带隙材料区20采用Al0.2Ga0.8As,厚度为10~100nm,n型掺杂浓度以线性、多项式或指数的形式从1016变化到1018 cm-3型。The narrow bandgap material region 20 is made of Al 0.2 Ga 0.8 As with a thickness of 10-100 nm, and the n-type doping concentration changes from 10 16 to 10 18 cm -3 in a linear, polynomial or exponential form.
窗口层区域30采用Al0.6Ga0.4As, 厚度为10~100nm,n型掺杂浓度为1018 cm-3。The window layer region 30 is made of Al 0.6 Ga 0.4 As with a thickness of 10-100 nm and an n-type doping concentration of 10 18 cm -3 .
该子太阳电池结构同样采用低压金属有机物化学气相沉积(MOCVD)设备生长。本结构中,区域12/区域11形成第一同质结,构成i/p-型场助结构,区域30/区域20形成第一异质结,构成n+/n-型场助结构。窄带隙材料区20和宽带隙基区11形成第二异质结,上述的i/p-型场助结构和n+/n-型场助结构均对第二异质结形成场助效应,通过两边的场助结构里的电场加速了载流子的运输能力。The sub-solar cell structure was also grown using low-pressure metal-organic chemical vapor deposition (MOCVD) equipment. In this structure, the region 12/region 11 forms a first homojunction, forming an i/p-type field-assisted structure, and the region 30/region 20 forms a first heterojunction, forming an n+/n-type field-assisted structure. The narrow bandgap material region 20 and the wide bandgap base region 11 form a second heterojunction, and the above-mentioned i/p-type field-assisted structure and n+/n-type field-assisted structure both form a field-assisted effect on the second heterojunction, through The electric field in the field-assisted structure on both sides accelerates the carrier transport ability.
综上所述,本发明用于提供一种含有双边场助效应的异质结太阳电池,该电池含有双边场助效应的异质结,不仅增强了整体的载流子输运能力,而且还增强了载流子跨越异质结势垒的能力,提高了电池效率,具有一定的市场开发潜力和实用价值。In summary, the present invention is used to provide a heterojunction solar cell with double-sided field-assisted effect, which not only enhances the overall carrier transport capacity, but also The ability of carriers to cross the heterojunction barrier is enhanced, the efficiency of the battery is improved, and it has certain market development potential and practical value.
尽管本发明的内容已经通过上述优选实施例作了详细介绍,但应当认识到上述的描述不应被认为是对本发明的限制。在本领域技术人员阅读了上述内容后,对于本发明的多种修改和替代都将是显而易见的。因此,本发明的保护范围应由所附的权利要求来限定。Although the content of the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. Various modifications and alterations to the present invention will become apparent to those skilled in the art upon reading the above disclosure. Therefore, the protection scope of the present invention should be defined by the appended claims.
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