CN106129165B - A kind of heterojunction solar battery for helping effect containing bilateral field - Google Patents

A kind of heterojunction solar battery for helping effect containing bilateral field Download PDF

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CN106129165B
CN106129165B CN201610801790.2A CN201610801790A CN106129165B CN 106129165 B CN106129165 B CN 106129165B CN 201610801790 A CN201610801790 A CN 201610801790A CN 106129165 B CN106129165 B CN 106129165B
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material area
field
solar battery
bandgap material
heterojunction solar
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CN106129165A (en
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张玮
陆宏波
李欣益
杨丞
张华辉
陈杰
张梦炎
张建琴
郑奕
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Shanghai Institute of Space Power Sources
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

The invention discloses a kind of heterojunction solar battery for helping effect containing bilateral field, wide bandgap material area, low bandgap material area and Window layer region that the battery sets gradually.Wide bandgap material area includes the broad-band gap base and undoped p area for setting gradually.Broad-band gap base uses AlyGa1‑yAs, 0.24≤y≤0.3, thickness is 10 ~ 3000nm.Low bandgap material area uses AlxGa1‑xAs, x≤0.2, thickness is 10 ~ 40nm.Window layer region uses Al (Ga) InP or AlzGa1‑zAs, z >=0.4, thickness is 10 ~ 50nm.Wide bandgap material area and low bandgap material area form the second hetero-junctions, there is i/p types field and help in the hetero-junctions both sides and help structure with n+/n types.Therefore, the carrier transport of the hetero-junctions of solar cell second and the ability across potential barrier of heterogenous junction are improved, so as to improve the utilization rate of solar cell.

Description

A kind of heterojunction solar battery for helping effect containing bilateral field
Technical field
The present invention relates to a kind of solar cell, and in particular to a kind of heterojunction solar battery for helping effect containing bilateral field.
Background technology
The advantages of III-V solar cell is because of its high conversion efficiency, strong Radiation hardness, good temp characteristic, quilt It is high performance and long service life space of new generation main power source to be known as.With compound semiconductor growth technology, (such as Organometallic is closed Thing vapour phase epitaxy --- MOCVD) continuous progress, the efficiency of iii-v solar cell obtained large increase.At present, unijunction GaAs battery efficiencies already exceed 29%, and five knot iii-v efficiency of solar cell of bonding have reached 36%.Realize efficient five knot- Six connection solar cells obtain one of key point be obtain band gap 1.7-1.8eV i.e. wavelength 690nm-730nm the second knot, generally The absorption bands material using Al components 20-28% AlGaAs, it is well known that high Al contents compound generally have than Relatively low carrier useful life, especially the formed DX central defects of N-shaped doping are very serious complex centres.
In common heterojunction solar battery, structure is not helped using field in narrow band gap launch site as shown in Figure 1, or Person employs the field containing undoped layer and helps structure as shown in Figure 2, and without structure is helped using field in broad-band gap base, this is all Reduce the transport capability of carrier especially narrow band gap launch site transition from hole to broad-band gap base.
The content of the invention
It is an object of the invention to provide a kind of heterojunction solar battery for helping effect containing bilateral field, the battery overcomes existing The transport capability of technology carrier is low, and especially the hole in low bandgap material area low is asked to the transition ability of broad-band gap base Topic, structure is helped by double fields, improves the transport capability and transition ability of carrier, improves the utilization rate of solar cell.
In order to achieve the above object, the invention provides a kind of heterojunction solar battery for helping effect containing bilateral field, should Battery bag contains wide bandgap material area, low bandgap material area and the Window layer region for setting gradually.
Wherein, described wide bandgap material area includes the broad-band gap base and undoped p area for setting gradually.
Wherein, described broad-band gap base and undoped p area forms the first homojunction, and first homojunction is helped with field Structure.
Wherein, described low bandgap material area and Window layer region forms the first hetero-junctions, and first hetero-junctions has Field helps structure.
Wherein, described wide bandgap material area and low bandgap material area forms the second hetero-junctions.
Wherein, described broad-band gap base uses i/p-/p+ types AlyGa1-yAs, 0.24≤y≤0.3, thickness be 10 ~ 3000nm, p-type doping concentration is from 1016To 1018cm-3。
Wherein, described low bandgap material area uses n+/n- types AlxGa1-xAs, x≤0.2, thickness is 10 ~ 100nm, n Type doping concentration is 1016cm-3To 1018cm-3。
Wherein, described Window layer region is using Al (Ga) InP or Al using N-shapedzGa1-zAs, z >=0.4, thickness is 10 ~ 50nm, N-shaped doping concentration is 1017~1018cm-3。
Described low bandgap material area includes the weak N-shaped doped region and heavy n-type doped region for setting gradually, the weak N-shaped doping Area is different with the N-shaped doping concentration of heavy n-type doped region.
Described weak N-shaped doped region and the thickness of heavy n-type doped region are 10 ~ 50nm.
Described weak N-shaped doped region and heavy n-type doped region form the second homojunction, and second homojunction helps knot with field Structure.
The second described homojunction and the field of the first hetero-junctions help structure to be n+/n- types and help.
The field of the first described homojunction helps structure to be helped for i/p- types.
Described broad-band gap base and the doping concentration distribution function in low bandgap material area be gradient, linear, multinomial or Any one in exponential form.
Described undoped p area uses AlyGa1-yAs, 0.24≤y≤0.3, thickness is 10 ~ 100nm, undoped p.
Described solar cell is also comprising the back surface field for being arranged on broad-band gap base side.
Described back surface field uses the Al of N-shapedzGa1-zAs, z >=0.4, thickness is 10 ~ 50mm, and p-type doping concentration is 1017~ 1018cm-3。
A kind of heterojunction solar battery for helping effect containing bilateral field that the present invention is provided, solves prior art presence The transport capability and the low problem of transition ability of carrier, with advantages below：
The wide bandgap material area and low bandgap material area of the solar cell form the second hetero-junctions, and heterogeneous second The both sides formation i/p- types field of knot helps and is helped with n+/n- types, makes the solar cell that there are double fields to help effect, so that battery efficiency is carried It is high；The concentration and different zones adulterated by p-type or N-shaped in rationally setting solar cell different materials zone position, material Thickness, the hetero-junctions for being formed low bandgap material area and wide bandgap material area added by the electric field that the field on both sides is helped in structure Fast carrier, improves the transport capability of carrier, while enhancing carrier across the ability of potential barrier of heterogenous junction；By by width The doping concentration distribution function in band gap base and low bandgap material area is gradient, linear, multinomial or exponential form so that homogeneity The change in concentration of knot and hetero-junctions is slow, it is possible to increase carrier transport efficiency.
Brief description of the drawings
Fig. 1 for prior art narrow band gap launch site in do not helped using field structure heterojunction solar battery energy band diagram （Ec：Conduction band bottom energy, Ef：Fermi level, Ev：Top of valence band energy）.
Fig. 2 helps the heterojunction solar battery energy band of structure for the narrow bandgap region field of containing undoped layer of prior art Figure.
Fig. 3 is a kind of heterojunction solar battery energy band diagram for helping effect containing bilateral field of the invention.
The preferred embodiment structural representation of the heterojunction solar battery that effect is helped containing bilateral field that Fig. 4 is provided for the present invention Figure.
The preferred embodiment structural representation of the heterojunction solar battery that effect is helped containing bilateral field that Fig. 5 is provided for the present invention Figure.
Specific embodiment
Technical scheme is described further below in conjunction with drawings and Examples.
As shown in figure 4, the present invention is carried for providing a kind of heterojunction solar battery for helping effect containing bilateral field, the present invention Supplied a kind of heterojunction solar battery for helping effect containing bilateral field, the battery bag contain set gradually wide bandgap material area 10, Low bandgap material area 20 and Window layer region 30.
Wide bandgap material area 10 includes the broad-band gap base 11 and undoped p area 12 for setting gradually.
Broad-band gap base 11 and undoped p area 12 form the first homojunction, and first homojunction helps structure with field.
Low bandgap material area 20 and Window layer region 30 form the first hetero-junctions, and first hetero-junctions helps knot with field Structure.
Wide bandgap material area 10 and low bandgap material area 20 form the second hetero-junctions.
Broad-band gap base 11 is using i/p-/p+ types AlyGa1-yAs, 0.24≤y≤0.3, thickness is 10 ~ 3000nm, p-type Doping concentration is from 1016To 1018cm-3.As shown in figure 3, energy difference between the conduction band bottom of the broad-band gap base 11 and top of valence band compared with Greatly.
Low bandgap material area 20 is using n+/n- types AlxGa1-xAs, x≤0.2, thickness is 10 ~ 100nm, N-shaped doping concentration It is 1016cm-3To 1018cm-3.As shown in figure 3, the energy difference between the conduction band bottom in the low bandgap material area 20 and top of valence band is smaller.
Window layer region 30 is using Al (Ga) InP or Al using N-shapedzGa1-zAs, z >=0.4, thickness is 10 ~ 50nm, n Type doping concentration is 1017~1018cm-3。
Low bandgap material area 20 includes the weak N-shaped doped region 21 and heavy n-type doped region 22 for setting gradually, the weak N-shaped doping Area 21 is different with the N-shaped doping concentration of heavy n-type doped region 22.
The thickness of weak N-shaped doped region 21 and heavy n-type doped region 22 is 10 ~ 50nm.
Weak N-shaped doped region 21 and heavy n-type doped region 22 form the second homojunction, and second homojunction helps knot with field Structure.
The field of the second homojunction and the first hetero-junctions helps structure to be n+/n- types and helps.The n+/n- types field help enhance it is low The hole collection efficiency of mobility aluminum contained compound.
The field of the first homojunction helps structure to be helped for i/p- types.I/p- types field helps effect to enhance carrier and crosses over heterogeneous The probability of junction barrier, so as to improve short-circuit current density.
The doping concentration distribution function in broad-band gap base 11 and low bandgap material area 20 is gradient, linear, multinomial or refers to Any one in number form formula.
Undoped p area 12 uses AlyGa1-yAs, 0.24≤y≤0.3, thickness is 10 ~ 100nm, undoped p.
Solar cell is also comprising the back surface field 40 for being arranged on the side of broad-band gap base 11.
Back surface field 40 uses the Al of N-shapedzGa1-zAs, z >=0.4, thickness is 10 ~ 50mm, and p-type doping concentration is 1017~1018cm-3。
Embodiment 1
By the band gap in five connection solar cells 1.7-1.8eV be wavelength in the sub- solar cell of 690nm-730nm as a example by, As shown in figure 4, the battery bag contains back surface field 40, broad-band gap base 11, undoped p area 12, weak N-shaped doped region 21, the weight for setting gradually N-shaped doped region 22 and Window layer region 30.
Back surface field 40 uses Al0.4Ga0.6As, thickness is 10 ~ 50nm, and p-type doping concentration is 1018 cm-3。
Broad-band gap base 11 uses Al0.26Ga0.74As, thickness is 1000 ~ 3000nm, and p-type doping concentration is 1016 cm-3。
Undoped p area 12 uses Al0.26Ga0.74As, thickness is 10 ~ 100nm, undoped p.
Weak N-shaped doped region 21 uses Al0.2Ga0.8As, thickness is 10 ~ 50nm, and N-shaped doping concentration is 1017 cm-3。
Heavy n-type doped region 22 uses Al0.2Ga0.8As, thickness is 10 ~ 50nm, and N-shaped doping concentration is 1018 cm-3。
Weak N-shaped doped region 21 and the composition low bandgap material of heavy n-type doped region 22 area 20.
Window layer region 30 uses Al0.6Ga0.4As, thickness is 10 ~ 100nm, and N-shaped doping concentration is 1018 cm-3。
The sub- solar battery structure uses low pressure metal organic chemical vapor deposition（MOCVD）Equipment grows.Book is too In positive electricity pool structure, 12/ region of region 11 forms the first homojunction, constitutes i/p- types and helps structure, and the region 21 of region 22/ is formed Second homojunction, constitutes n+/n- types and helps structure.Low bandgap material area 20 and broad-band gap base 11 form the second hetero-junctions, on The i/p- types field stated helps structure and n+/n- types field to help structure to form field to the second hetero-junctions and helps effect, is helped by the field on both sides Electric field acceleration in the structure transport capacity of carrier.
Test result indicate that, using the solar cell spectral response of structure of the present invention in the brachymedial wave band area of 400-600nm It is interior, 5%-10% all is improved than the other structures battery of same experiment condition, open-circuit voltage improves 10-30mV.
Embodiment 2
In 1.7-1.8eV it is still sub- solar cell of the wavelength in 690nm-730nm with the band gap in five connection solar cells As a example by, realize there can also be structure as shown in Figure 5 such as the identical device performance of example 1, this includes：Back surface field 40, broad-band gap base Area 11, undoped p area 12, low bandgap material area 20 and Window layer region 30.
Back surface field 40 uses Al0.4Ga0.6As, thickness is 10 ~ 50nm, and p-type doping concentration is 1018 cm-3。
Broad-band gap base 11 uses Al0.26Ga0.74As, thickness is 1000 ~ 3000nm, and p-type doping concentration is with linear, multinomial The form of formula or index is from 1018Change to 1016 cm-3。
Undoped p area 12 uses Al0.26Ga0.74As, thickness is 10 ~ 100nm, undoped p.
Low bandgap material area 20 uses Al0.2Ga0.8As, thickness is 10 ~ 100nm, and N-shaped doping concentration is with linear, multinomial Or the form of index is from 1016Change to 1018 cm-3Type.
Window layer region 30 uses Al0.6Ga0.4As, thickness is 10 ~ 100nm, and N-shaped doping concentration is 1018 cm-3。
The sub- solar battery structure equally uses low pressure metal organic chemical vapor deposition（MOCVD）Equipment grows.This In structure, 12/ region of region 11 forms the first homojunction, constitutes i/p- types field and helps structure, and it is different that 30/ region of region 20 forms first Matter knot, constitutes n+/n- types and helps structure.Low bandgap material area 20 and broad-band gap base 11 form the second hetero-junctions, above-mentioned i/ P-type field helps structure and n+/n- types field to help structure to form field to the second hetero-junctions and helps effect, is helped in structure by the field on both sides The electric field acceleration transport capacity of carrier.
In sum, the present invention contains for providing a kind of heterojunction solar battery for helping effect containing bilateral field, the battery There is bilateral field to help the hetero-junctions of effect, not only increase overall carrier transport ability, and also enhance carrier leap The ability of potential barrier of heterogenous junction, improves battery efficiency, with certain market development potential and practical value.
Although present disclosure is discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned Description is not considered as limitation of the present invention.After those skilled in the art have read the above, for of the invention Various modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.

Claims (10)

1. a kind of heterojunction solar battery for helping effect containing bilateral field, it is characterised in that the battery bag contains the width for setting gradually Band gap material area（10）, low bandgap material area（20）With Window layer region（30）；
Described wide bandgap material area（10）Comprising the broad-band gap base for setting gradually（11）With undoped p area（12）；
Described broad-band gap base（11）With undoped p area（12）The first homojunction is formd, first homojunction helps knot with field Structure；
Described low bandgap material area（20）With Window layer region（30）The first hetero-junctions is formd, first hetero-junctions has field Help structure；
Described wide bandgap material area（10）With low bandgap material area（20）Form the second hetero-junctions；
Described broad-band gap base（11）Using i/p-/p+ types AlyGa1-yAs, 0.24≤y≤0.3, thickness is 10 ~ 3000nm, P-type doping concentration is from 1016To 1018cm-3；
Described low bandgap material area（20）Using n+/n- types AlxGa1-xAs, x≤0.2, thickness is 10 ~ 100nm, N-shaped doping Concentration is 1016cm-3To 1018cm-3；
Described Window layer region（30）Using AlGaInP, AlInP or Al of N-shapedzGa1-zAs, z >=0.4, thickness is 10 ~ 50nm, N-shaped doping concentration is 1017~1018cm-3。
2. the heterojunction solar battery for helping effect containing bilateral field according to claim 1, it is characterised in that described is narrow Band gap material area（20）Comprising the weak N-shaped doped region for setting gradually（21）With heavy n-type doped region（22）, the weak N-shaped doped region （21）With heavy n-type doped region（22）N-shaped doping concentration it is different.
3. the heterojunction solar battery for helping effect containing bilateral field according to claim 2, it is characterised in that described is weak N-shaped doped region（21）With heavy n-type doped region（22）Thickness be 10 ~ 50nm.
4. the heterojunction solar battery for helping effect containing bilateral field according to claim 2, it is characterised in that described is weak N-shaped doped region（21）With heavy n-type doped region（22）The second homojunction is formd, second homojunction helps structure with field.
5. the heterojunction solar battery for helping effect containing bilateral field according to claim 4, it is characterised in that described The field of two homojunctions and the first hetero-junctions helps structure to be n+/n- types and helps.
6. the heterojunction solar battery for helping effect containing bilateral field according to claim 1, it is characterised in that described The field of one homojunction helps structure to be helped for i/p- types.
7. the heterojunction solar battery for helping effect containing bilateral field according to claim 1, it is characterised in that described width Band gap base（11）With low bandgap material area（20）Doping concentration distribution function be gradient, linear, multinomial or exponential form In any one.
8. the heterojunction solar battery for helping effect containing bilateral field according to claim 1, it is characterised in that it is described not Doped region（12）Using AlyGa1-yAs, 0.24≤y≤0.3, thickness is 10 ~ 100nm, undoped p.
9. the heterojunction solar battery for helping effect containing bilateral field according to claim 1, it is characterised in that it is described too Positive electricity pond also includes and is arranged on broad-band gap base（11）The back surface field of side（40）.
10. the heterojunction solar battery for helping effect containing bilateral field according to claim 9, it is characterised in that described Back surface field（40）Using the Al of p-typezGa1-zAs, z >=0.4, thickness is 10 ~ 50mm, and p-type doping concentration is 1017~1018cm-3。
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