CN111341872B - Gallium arsenide solar cell epitaxial structure and growth method thereof - Google Patents
Gallium arsenide solar cell epitaxial structure and growth method thereof Download PDFInfo
- Publication number
- CN111341872B CN111341872B CN201811548022.6A CN201811548022A CN111341872B CN 111341872 B CN111341872 B CN 111341872B CN 201811548022 A CN201811548022 A CN 201811548022A CN 111341872 B CN111341872 B CN 111341872B
- Authority
- CN
- China
- Prior art keywords
- layer
- gainp
- cell
- gaas
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 140
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 117
- 230000012010 growth Effects 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 27
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 38
- 229910000077 silane Inorganic materials 0.000 claims description 36
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 28
- 230000005641 tunneling Effects 0.000 claims description 20
- 239000000758 substrate Substances 0.000 claims description 17
- 230000009646 cyclic growth Effects 0.000 claims description 14
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- 150000002902 organometallic compounds Chemical class 0.000 claims description 10
- 239000005922 Phosphane Substances 0.000 claims description 9
- 229910000064 phosphane Inorganic materials 0.000 claims description 9
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 8
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 6
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 239000013078 crystal Substances 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 3
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 229910052732 germanium Inorganic materials 0.000 description 5
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/078—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers including different types of potential barriers provided for in two or more of groups H01L31/062 - H01L31/075
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a gallium arsenide solar cell epitaxial structure and a growth method thereof, wherein the cell comprises a Ge bottom cell, a GaAs middle cell and a GaInP top cell which are sequentially stacked, and the GaAs middle cell and the GaInP top cell respectively comprise a back layer and an emitting layer; the back layer of the GaAs middle cell comprises a delta-doped p-type GaInP layer, and the emitting layer comprises a delta-doped n-type GaAs layer; the back layer of the GaInP top cell includes a delta doped p-type GaInP layer and the emitter layer includes a delta doped n-type GaInP layer. According to the solar cell epitaxial structure, the back layers and the emitting layers of the middle cell and the top cell are subjected to delta doping growth, and the delta doping structure can block crystal dislocation extension, inhibit crystal defect propagation and improve the reliability and the photoelectric conversion efficiency of the solar cell epitaxial structure.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a gallium arsenide solar cell epitaxial structure.
Background
The triple-junction gallium arsenide solar cell has good spectral responsivity and high photoelectric conversion efficiency, and is generally applied to the fields of aerospace, concentrating photovoltaic power stations and the like. At present, the common three-junction gallium arsenide solar cells are Ge-based cells, gaAs intermediate cells and GaInP top cell structures, energy bands of the three-junction gallium arsenide solar cells are sequentially increased from bottom to top, and the three-junction gallium arsenide solar cells respectively absorb light with different wavelengths, so that full-spectrum absorption is realized. However, in the current triple junction gallium arsenide cell, each bottom cell adopts a direct doping growth method, namely, the growth is carried out by simultaneously connecting a growth source and a doping source, and the growth method brings a certain amount of defects to an epitaxial structure, so that the crystal quality of the epitaxial structure is influenced, and the photoelectric conversion performance and the reliability of the epitaxial structure are influenced.
Disclosure of Invention
The invention aims to provide a gallium arsenide solar cell epitaxial structure which comprises a Ge bottom cell, a GaAs middle cell and a GaInP top cell which are sequentially stacked, wherein the GaAs middle cell and the GaInP top cell respectively comprise a back layer and an emitting layer;
the back layer of the GaAs middle cell comprises a delta-doped p-type GaInP layer, and the emitting layer comprises a delta-doped n-type GaAs layer; the back layer of the GaInP top cell includes a delta doped p-type GaInP layer and the emitter layer includes a delta doped n-type GaInP layer.
For the Ge bottom cell, gaAs middle cell and GaInP top cell composite cell, there may be middle cell and top cell which are delta-doped, and for the middle cell and top cell, there are generally a plurality of structures including back layer, base region and emitter layer, if it is desired to improve the performance of the cell by means of delta doping, there are various alternatives, such as delta doping only in the middle cell or top cell, delta doping for both cells, delta doping for only a portion of the back layer or the emitter layer, or delta doping for all of them. The present invention has found that doping of the back layers in both the middle cell and the top cell, and incomplete delta doping of the base and emitter layers, significantly improves the cell structure and increases cell efficiency.
Preferably, the back layer of the GaAs middle cell further comprises a p-type GaInP layer which is attached to the surface of the delta-doped p-type GaInP layer close to the Ge bottom cell and is grown by direct doping, and the emission layer further comprises an n-type GaAs layer which is attached to the surface of the delta-doped n-type GaAs layer close to the Ge bottom cell and is grown by direct doping;
preferably, the back layer of the GaInP top cell further comprises a p-type GaInP layer grown by direct doping attached to the surface of the delta-doped p-type GaInP layer near the Ge bottom cell, and the emission layer further comprises an n-type GaInP layer grown by direct doping attached to the surface of the delta-doped n-type GaInP layer near the Ge bottom cell.
In each base layer or emission layer, a layered structure obtained by direct doping growth is provided in addition to the structure of the delta doping layer, and the efficiency of the battery can be very effectively improved through the synergistic effect with delta compared with the case of providing only the delta doping layer.
Preferably, in the back layer of the GaAs middle cell, the thickness of the p-type GaInP layer grown by direct doping is 20 to 40nm, and the thickness of the p-type delta-doped GaInP layer is 20 to 40nm; in the emitting layer of the GaAs middle battery, the thickness of the n-type GaAs layer obtained by direct doping growth is 25-60 nm, and the thickness of the delta-doped n-type GaAs emitting layer is 25-60 nm;
preferably, in the back layer of the GaInP top cell, the thickness of the p-type GaInP layer grown by direct doping is 20 to 40nm, and the thickness of the delta-doped p-type GaInP layer is 20 to 40nm; in the emitting layer of the GaInP top cell, the thickness of the n-type GaInP layer obtained by direct doping growth is 25-60 nm, and the thickness of the delta-doped n-type GaInP is 25-60 nm.
Preferably, in the direction of the Ge-bottom cell, the GaAs middle cell includes a window layer, an emitter layer, a base region, and a back layer, which are sequentially stacked; and the GaInP top cell comprises a contact layer, a window layer, an emitting layer, a base region and a back layer which are sequentially stacked towards the direction of the GaAs middle cell. The window layer of the middle cell is mainly used for transmitting sunlight with the wavelength of more than 670nm, after the base region of the middle cell absorbs the sunlight with the wavelength of 670-870nm, induced electromotive force is generated at the pn junction interface of the base region and the emitting layer, and the back layer plays a role in enhancing photon absorption and achieving enhancement efficiency. The window layer of the top cell is mainly used for transmitting the full solar spectrum, the base region absorbs wavelengths below 670nm to generate induced electromotive force at the interface of the base region and the emitting layer, and the back layer plays a role in enhancing photon absorption to achieve efficiency enhancement.
Preferably, the Ge-based cell is sequentially stacked with a p-type Ge substrate, an n-type Ge emitting layer and an n-type GaInP window layer. The germanium-based cell mainly absorbs the wavelength above 870 nm.
Preferably, the Ge bottom cell is connected to the GaAs through a tunnel junction, and the GaAs is connected to the GaInP through a tunnel junction.
Further preferably, the material of the tunnel junction is GaAs. The lower internal resistance of the tunneling junction material enables the batteries to be connected in series better, and the optimal current density is achieved.
Another object of the present invention is to provide a method for manufacturing a solar cell according to the present invention, comprising:
forming a delta-doped p-type GaInP layer in the back layer of the GaAs medium cell, and adopting a metal organic compound chemical vapor deposition method to grow 2-4 nm of GaInP without a doping source, then only introducing phosphane for 1-3 seconds, and then introducing the doping source for 2-4 seconds to finish the growth of one period; thus carrying out 5-20 cycles of cyclic growth;
and forming a delta-doped n-type GaAs layer in the emitting layer of the battery in GaAs, and adopting a metal organic compound chemical vapor deposition method to grow GaAs which is not introduced with silane for 2-4 nm, introducing arsine for 1-3 seconds and introducing silane for 2-4 seconds to finish the growth of one period, thus carrying out 6-30 periods of cyclic growth.
Forming a delta-doped p-type GaInP layer in the back layer of the GaInP top cell, growing GaInP which is not communicated with a doping source and has the length of 2-4 nm by adopting a metal organic compound chemical vapor deposition method, then only introducing phosphane for 1-3 seconds, and then introducing the doping source for 2-4 seconds to complete the growth of one period, and thus carrying out the cyclic growth of 5-20 periods;
and forming a delta-doped n-type GaInP layer in the emitting layer of the GaInP top battery, growing 2-4 nm of GaInP which is not introduced with silane by adopting a metal organic compound chemical vapor deposition method, introducing phosphorane for 1-3 seconds, introducing silane for 2-4 seconds, completing the growth of one period, and thus performing 6-30 periods of cyclic growth.
Preferably, the conditions of the metal organic compound chemical vapor deposition method are that the temperature is 550-850 ℃ and the pressure is 50-200 torr.
Preferably, the doping source of the back layer of the cell or the top cell is CCl 4 、CBr 4 Or diethyl zinc (DEZn).
As a preferable scheme, the preparation method of the battery comprises the following steps:
1) Performing n-type phosphorus diffusion on the upper surface of a p-type Ge substrate by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) method and controlling the temperature of a reaction chamber to be 680-850 ℃ and the pressure to be 50-200 torr to obtain an n-type Ge emitting layer, and growing a GaInP buffer layer with the thickness of 20-60 nm on the n-type Ge emitting layer to be used as a window layer of a bottom cell;
2) Growing n-type GaAs with the thickness of 5-10nm and p-type GaAs with the thickness of 5-10nm on the window layer to serve as a first tunneling junction;
3) Growing a p-type GaInP back layer with the thickness of 20-40 nm on the first tunneling junction in a direct doping growth mode, and then growing a delta-doped back layer with the thickness of about 20-40 nm in a delta doping mode; delta doping is specifically to grow GaInP with the wavelength of 2 to 4nm, introduce the phosphane for 1 to 3 seconds and then introduce the doping source for 2 to 4 seconds; thus carrying out 5 to 20 cycles of cyclic growth;
4) Growing p-type GaAs with the thickness of about 2000 to 3000nm on the delta-doped back layer to serve as a base region of the middle cell;
5) Growing an n-type GaAs emission layer with the thickness of 25-60 nm in a direct doping growth mode, and then obtaining a delta-doped n-type GaAs emission layer with the thickness of 25-60 nm in a delta doping mode; the delta doping is to grow GaAs which is not passed through silane at 2-4 nm, then to pass through arsine for 1-3 seconds, then to pass through silane for 2-4 seconds, and then to cyclically grow for 6-30 periods;
6) Then growing an n-type AlGaInP window layer with the thickness of 40-120 nm on the substrate;
7) Growing n-type GaAs and p-type GaAs on the window layer to serve as second tunneling junctions;
8) Growing a top cell p-type GaInP back layer with the thickness of 20-40 nm on the second tunneling junction in a direct doping growth mode, and then adopting a delta doping mode to form a delta doping back layer with the thickness of 20-40 nm; the delta doping is specifically to grow GaInP which is 2-4 nm and is not connected with a doping source, then only connect with phosphine for 1-3 seconds, then open the doping source for 2-4 seconds, and thus carry out 5-20 periods of cyclic growth;
9) Growing p-type GaInP with the thickness of 300 to 700nm on the back layer as a top cell base region;
10 An n-type GaInP emitting layer with the thickness of 25 to 60nm grows on the base region, and then a delta doping mode is adopted to obtain the delta-doped n-type GaInP emitting layer with the thickness of 25 to 60nm; the delta doping is to grow GaInP with silane not passing through for 2-4 nm, then only pass through phosphane for 1-3 seconds, then open silane for 2-4 seconds, and then grow GaInP with silane not passing through for 2-4 nm, and thus cyclically grow for 6-30 periods;
11 N-type AlGaInP window layer of 20 to 60nm is grown;
12 Cooled to 600 to 700 degrees celsius and a 40 to 100nm n-type GaAs contact layer is grown.
The invention has the following beneficial effects:
1) In the epitaxial structure of the triple-junction gallium arsenide solar cell, the back layers and the emitting layers of the middle cell and the top cell are subjected to delta doping growth, and the delta doping structure can block crystal dislocation extension and inhibit crystal defect propagation, so that the reliability and the photoelectric conversion efficiency of the triple-junction gallium arsenide solar cell are improved.
2) The solar cell can reduce the junction temperature of the cell during operation and can obtain higher open-circuit voltage and short-circuit current.
Drawings
Fig. 1 a schematic diagram of the cell of example 1.
Detailed Description
The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
Example 1
The embodiment relates to a gallium arsenide solar cell epitaxial structure which sequentially comprises a Ge bottom cell, a GaAs middle cell and a GaInP top cell which are arranged in a stacked mode;
the specific structure of the light emitting diode comprises a p-Ge substrate, an n-Ge emitting layer obtained by conducting n-type phosphorus diffusion on a germanium substrate, an n-GaInP window layer with the thickness of 30nm, an n-GaAs tunneling junction with the thickness of 5nm, a p-GaInP back layer 1 with the thickness of 30nm, a delta-doped p-GaInP back layer 2 with the thickness of 32nm, a p-GaAs base layer with the thickness of 2500nm, an n-GaAs emitting layer 1 with the thickness of 30nm, a delta-doped n-GaAs emitting layer 2 with the thickness of 32nm, an n-AlGaInP window layer with the thickness of 80nm, an n-GaAs tunneling junction with the thickness of 5nm, a p-GaInP back layer 1 with the thickness of 30nm, a p-delta GaInP back layer 2 with the thickness of 32nm, a GaInP-GaInP base layer with the thickness of 500nm, a p-GaInP emitting layer 1 with the thickness of 30nm, a p-GaInP emitting layer with the thickness of 32nm, and an AlGaInP emitting layer with the thickness of 50nm, and a contact thickness of 40nm. The structure of the device is schematically shown in figure 1.
The embodiment relates to a preparation method of a battery, which comprises the following steps:
1) And (3) adopting MOCVD equipment to grow an epitaxial layer, setting the temperature of a reaction chamber to be 750 ℃ and the pressure to be 150torr, performing n-type phosphorus diffusion on the upper surface of the p-type Ge substrate to be used as an emitting layer of the bottom cell, and then growing an n-type GaInP buffer layer of 30nm on the emitting layer to be used as a window layer of the bottom cell, wherein n-type doping adopts silane.
In the later steps, silane is used for the n-type doping of the epitaxial layer, and CBr is used for the p-type doping 4 ；
2) Growing n-type GaAs with the thickness of 5nm, and taking p-type GaAs with the thickness of 5nm as a first tunneling junction;
3) Growing a p-type GaInP back layer 1 with the thickness of 30nm, and then growing the p-type GaInP back layer 2 by adopting a delta doping mode, specifically, growing 2nm GaInP (break-through CBr) 4 ) Then, the phosphine is introduced for 2 seconds, and CBr is opened 4 3 seconds, so that 16 cycles of growth are carried out, and the back layer 2 with the thickness of 32nm is obtained;
4) Growing p-type GaAs with the thickness of 2500nm as a base region of the middle cell, and adopting CBr for p-type doping 4 ；
5) Growing an n-type GaAs emission layer 1 with the thickness of 30nm, and then growing a delta-doped n-type GaAs emission layer 2 with the thickness of 32nm in a delta-doping mode, specifically, growing 2nm of GaAs which is not communicated with silane, only communicating arsine for 2 seconds, then opening silane for 3 seconds, and circularly growing for 16 periods in this way to obtain the delta-doped n-type GaAs emission layer 2 with the thickness of 32 nm;
6) Growing an n-type AlGaInP window layer with the thickness of 80 nm;
7) Growing n-type GaAs with the thickness of 5nm and p-type GaAs with the thickness of 5nm as a second tunneling junction;
8) Growing a top cell p-type GaInP back layer 1 with the thickness of 30nm, and then growing a delta doping p-type GaInP back layer 2 with the thickness of 32nm by adopting a delta doping mode, wherein the specific operation of the delta doping growth is that 2nm of unengaged CBr is grown firstly 4 Introducing the doped GaInP source for 2 seconds, opening the doped source for 3 seconds, and performing 16 cycle cycles to obtain a delta doped p-type GaInP back layer 2 with the thickness of 32 nm;
9) Growing p-type GaInP with the thickness of 500nm as a top cell base region;
10 Growing an n-type GaInP emitting layer 1 with the thickness of 30nm, and then growing a delta-doped n-type GaInP emitting layer 2 with the thickness of 32nm in a delta doping mode, wherein the delta doping growth is specifically performed by firstly growing 2nm of GaInP which is not passed through silane, then only passing through phosphine for 2 seconds, and then opening the silane for 2 seconds, so that the growth is cycled for 16 cycles to obtain the delta-doped n-type GaInP emitting layer 2 with the thickness of 32 nm;
11 Growing a 40nm n-type AlGaInP window layer;
12 Lowering the temperature to 670 ℃ to grow 50nm n-type GaAs contact layer.
Example 2
This example relates to a gallium arsenide solar cell epitaxial structure, and compared to example 1, the difference is that the delta doped n-GaInP emitter layer 2 has a thickness of 40nm.
The gallium arsenide solar cell epitaxial structure comprises a Ge bottom cell, a GaAs middle cell and a GaInP top cell which are arranged in a stacked mode in sequence;
the specific structure of the light emitting diode comprises a p-Ge substrate, an n-Ge emitting layer obtained by conducting n-type phosphorus diffusion on a germanium substrate, an n-GaInP window layer with the thickness of 30nm, an n-GaAs tunneling junction with the thickness of 5nm, a p-GaInP back layer 1 with the thickness of 30nm, a delta-doped p-GaInP back layer 2 with the thickness of 32nm, a p-GaAs base layer with the thickness of 2500nm, an n-GaAs emitting layer 1 with the thickness of 30nm, a delta-doped n-GaAs emitting layer 2 with the thickness of 32nm, an n-AlGaInP window layer with the thickness of 80nm, an n-GaAs tunneling junction with the thickness of 5nm, a p-GaInP back layer 1 with the thickness of 30nm, a p-delta GaInP back layer 2 with the thickness of 32nm, a GaInP-GaInP base layer with the thickness of 500nm, a p-GaInP emitting layer 1 with the thickness of 30nm, a p-GaInP emitting layer with the thickness of 40nm, and an AlGaN emitting layer with the thickness of 50nm, wherein the light emitting layer is in contact with the thickness of 40nm.
The embodiment relates to a preparation method of a battery, which comprises the following steps:
1) And carrying out epitaxial layer growth by adopting MOCVD equipment, setting the temperature of the reaction chamber to be 750 ℃ and the pressure to be 150torr, and carrying out n-type phosphorus diffusion on the upper surface of the p-type Ge substrate to be used as an emitting layer of the bottom cell. Growing an n-type GaInP buffer layer of 30nm on the substrate to serve as a window layer of the bottom cell, wherein SiH4 is adopted for n-type doping, silane is used for n-type doping of the epitaxial layer, and CBr4 is used for p-type doping;
2) Growing n-type GaAs with the thickness of 5nm, and taking p-type GaAs with the thickness of 5nm as a first tunneling junction;
3) Growing a p-type GaInP back layer 1 with the thickness of 30nm, growing GaInP which is not passed through CBr4 (doping source) with the thickness of 2nm in a delta doping mode, passing through phosphine for 2 seconds, opening the CBr for 43 seconds, and thus performing 16-cycle growth to grow a delta-doped p-type GaInP back layer 2 with the thickness of 32 nm;
4) Growing p-type GaAs with the thickness of 2500nm as a base region of the middle battery, wherein the p-type doping still adopts CBr4;
5) Growing an n-type GaAs emission layer 1 with the thickness of 30nm, then adopting a delta doping mode, firstly growing GaAs with 2nm of silane which is not passed through, then only passing through arsine for 2 seconds, then opening silane for 3 seconds, and then growing GaAs with 2nm of silane which is not passed through, and carrying out cyclic growth in such a way, wherein the cycle is 16, so as to obtain a delta-doped n-type GaAs emission layer 2 with the thickness of 32 nm;
6) Growing an n-type AlGaInP window layer with the thickness of 80 nm;
7) Growing n-type GaAs with the thickness of 5nm and p-type GaAs with the thickness of 5nm as a second tunneling junction;
8) Growing a top cell p-type GaInP back layer 1 with the thickness of 30nm, adopting a delta doping mode, firstly growing GaInP with the thickness of 2nm and without a CBr4 doping source, then only introducing phosphine for 2 seconds, and then opening the doping source for 3 seconds, thus carrying out 16 cycle periods to obtain a delta doped p-type GaInP back layer 2 with the thickness of 32 nm;
9) Growing p-type GaInP with the thickness of 500nm as a top cell base region;
10 An n-type GaInP emitting layer 1 with the thickness of 30nm is grown, then 2nm of GaInP which is not passed through silane is grown in a delta doping mode, then phosphorane is passed through for 2 seconds, silane is opened for 2 seconds, the growth is circulated in the way, the period is 20, and the delta-doped n-type GaInP emitting layer 2 with the thickness of 40nm is obtained;
11 Growing a 40nm n-type AlGaInP window layer;
12 Lowering the temperature to 670 ℃ to grow a 50nm n-type GaAs contact layer.
Example 3
This example relates to a gallium arsenide solar cell epitaxial structure, which differs from example 1 in that the p-type delta doped GaInP back layer 2 has a thickness of 40nm.
The epitaxial structure described in this embodiment sequentially includes a Ge bottom cell, a GaAs middle cell, and a GaInP top cell, which are stacked;
the light-emitting diode is characterized by sequentially comprising a p-Ge substrate, an n-Ge emitting layer obtained by conducting n-type phosphorus diffusion on the germanium substrate, an n-GaInP window layer with the thickness of 30nm, an n-GaAs tunneling junction with the thickness of 5nm, a p-GaInP back layer 1 with the thickness of 30nm, a delta-doped p-GaInP back layer 2 with the thickness of 40nm, a p-GaAs base region with the thickness of 2500nm, an n-GaAs emitting layer 1 with the thickness of 30nm, a delta-doped n-GaAs emitting layer 2 with the thickness of 32nm, an n-AlGaInP window layer with the thickness of 80nm, an n-GaAs tunneling junction with the thickness of 5nm, a p-GaInP back layer 1 with the thickness of 30nm, a p-GaInP back layer 2 with the thickness of 32nm, a GaInP-GaInP emitting layer 2 with the thickness of 500nm, a GaInP-GaInP emitting base region with the thickness of 30nm, a p-GaInP emitting layer 1 with the thickness of 32nm, and a delta-GaAs emitting layer 2 with the thickness of 40nm from bottom to top, and a contact layer, wherein the delta-AlGaInP-GaInP window layer is 50 nm.
The embodiment relates to a preparation method of a battery, which comprises the following steps:
1) And carrying out epitaxial layer growth by adopting MOCVD equipment, setting the temperature of the reaction chamber to be 750 ℃ and the pressure to be 150torr, and carrying out n-type phosphorus diffusion on the upper surface of the p-type Ge substrate to be used as an emitting layer of the bottom cell. Growing an n-type GaInP buffer layer of 30nm on the substrate to serve as a window layer of the bottom cell, wherein SiH4 is adopted for n-type doping, silane is used for n-type doping of the epitaxial layer, and CBr4 is used for p-type doping;
2) Growing n-type GaAs with the thickness of 5nm, and taking p-type GaAs with the thickness of 5nm as a first tunneling junction;
3) Growing a p-type GaInP back layer 1 with the thickness of 30nm, growing GaInP which is not communicated with CBr4 (doping source) with the thickness of 2nm in a delta doping mode, only introducing phosphane for 2 seconds, opening CBr for 43 seconds, and then growing GaInP which is not communicated with CBr4 with the thickness of 2nm, thus performing 20-cycle growth, and growing a delta-doped p-type GaInP back layer 2 with the thickness of 40nm;
4) Growing p-type GaAs with the thickness of 2500nm as a base region of the middle battery, wherein the p-type doping still adopts CBr4;
5) Growing an n-type GaAs emission layer 1 with the thickness of 30nm, then adopting a delta doping mode, firstly growing GaAs which is not subjected to silane passage and has the thickness of 2nm, then only introducing arsine for 2 seconds, then opening silane for 3 seconds, and then growing GaAs which is not subjected to silane passage and has the thickness of 2nm in a circulating mode, wherein the cycle of the cyclic growth is 16, so that a delta-doped n-type GaAs emission layer 2 with the thickness of 32nm is obtained;
6) Growing an n-type AlGaInP window layer with the thickness of 80 nm;
7) Growing 5nm n-type GaAs and 5nm p-type GaAs as second tunneling junctions;
8) Growing a top cell p-type GaInP back layer 1 with the thickness of 30nm, adopting a delta doping mode, firstly growing GaInP with the thickness of 2nm and without a CBr4 doping source, then only introducing phosphane for 2 seconds, then opening the doping source for 3 seconds, and then growing GaInP with the thickness of 2nm and without the doping source, and performing 16 cycle cycles in this way to obtain a delta doped p-type GaInP back layer 2 with the thickness of 32 nm;
9) Growing p-type GaInP with the thickness of 500nm as a top cell base region;
10 N-type GaInP emitting layer 1 with the thickness of 30nm is grown, then 2nm of GaInP which is not passed through silane is grown in a delta doping mode, then phosphorane is passed through for 2 seconds, then the silane is opened for 2 seconds, and then 2nm of GaInP which is not passed through silane is grown, the cyclic growth is carried out, the period is 16, and the delta-doped n-type GaInP emitting layer 2 with the thickness of 32nm is obtained;
11 Growing a 40nm n-type AlGaInP window layer;
12 Lowering the temperature to 670 ℃ to grow a 50nm n-type GaAs contact layer.
Comparative example 1
The present comparative example is different from example 1 in that the p-GaInP back layer 1 and n-GaAs emission layer 1 are not provided in the GaAs in-cell.
Comparative example 2
The comparative example is different from example 1 in that the GaInP top cell is not provided with the p-GaInP back layer 1 and the n-GaInP emitting layer 1
Comparative example 3
This comparative example differs from example 1 in that in the GaAsThe delta doped back layer of the cell was prepared by first growing a 1nm blind CBr 4 GaInP (doping source), phosphine for 2 s, and CBr 4 3 seconds, 32 cycles of growth are thus carried out, and a delta-doped p-type GaInP back layer 2 with a thickness of 32nm is grown; the delta doped emitter layer was prepared by growing 1nm of GaAs with silane not passed through, then passing through arsine for 2 seconds, then opening the silane for 3 seconds, and repeating the above steps for 32 cycles, resulting in a delta doped n-type GaAs emitter layer 2 with a thickness of 32 nm.
Comparative example 4
The present comparative example is different from example 1 in that the delta-doped back layer of the GaAs top cell is grown by growing 6nmm of GaInP not passed through the CBr4 doping source, passing only phosphane for 4 seconds, and then opening the doping source for 6 seconds, thus performing 5 cycles, to obtain a delta-doped p-type GaInP back layer 2 having a thickness of 30 nm; the delta-doped emitting layer is prepared by growing 6nm of GaInP which is not passed through silane, then passing through phosphane for 4 seconds, then opening silane for 6 seconds, and then repeating the cyclic growth for 5 periods to obtain the delta-doped n-type GaInP emitting layer with the thickness of 30 nm.
Comparative example 5
The comparative example relates to a common composite battery on the market, which comprises a Ge bottom battery, a GaAs middle battery and a GaInP top battery which are arranged in a stacked mode, and the specific structure of the composite battery is as follows:
the common battery comprises a p-Ge substrate, an n-Ge emission layer for n-type phosphorus diffusion on the germanium substrate, an n-GaInP window layer with the thickness of 30nm, an n-GaAs tunneling junction with the thickness of 5nm, a p-GaInP back layer 1 with the thickness of 60nm, a p-GaAs base region with the thickness of 2500nm, an n-GaAs emission layer 1 with the thickness of 70nm, an n-AlGaInP window layer with the thickness of 80nm, an n-GaAs tunneling junction with the thickness of 5nm, a p-GaInP back layer 1 with the thickness of 60nm, a p-GaInP with the thickness of 500nm, an n-GaInP emission layer 1 with the thickness of 60nm, an n-AlGaInP window layer with the thickness of 40nm and an n-contact layer with the thickness of 50nm from bottom to top.
Examples of the experiments
The photoelectric conversion efficiencies of the solar epitaxial structures of the examples and the comparative examples were measured by the following methods under the am1.5d, 500-fold concentration test conditions:
from the above data, it can be seen that doping growth in the middle cell and the top cell only improves the effect much less than doping growth in both the middle cell and the top cell, and the delta doping growth described in this application is more desirable.
In the research process, the invention also tries to only carry out delta doping on the back layer and the emitting layer, namely, only one delta doping layer is contained in the back layer and the emitting layer, and the normal doping layer is not contained, so that the effect is not obviously improved compared with the normal doping mode. Attempts have also been made to delta dope only the back layers of the middle and top cells, and not the emitter layer, and the effect is less than ideal in the manner of the present invention.
Although the invention has been described in detail hereinabove by way of general description, specific embodiments and experiments, it will be apparent to those skilled in the art that many modifications and improvements can be made thereto based on the invention. Accordingly, such modifications and improvements are intended to be within the scope of the invention as claimed.
Claims (10)
1. The preparation method of the gallium arsenide solar cell epitaxial structure is characterized in that the cell comprises a Ge bottom cell, a GaAs middle cell and a GaInP top cell which are sequentially stacked, wherein the GaAs middle cell and the GaInP top cell respectively comprise a back layer and an emitting layer;
the back layer of the GaAs middle cell comprises a delta-doped p-type GaInP layer, and the emitting layer comprises a delta-doped n-type GaAs layer; the back layer of the GaInP top cell comprises a delta doped p-type GaInP layer and the emitter layer comprises a delta doped n-type GaInP layer;
forming a delta-doped p-type GaInP layer in the back layer of the GaAs medium cell, growing GaInP which is not connected with a doping source and has the length of 2-4 nm by adopting a metal organic compound chemical vapor deposition method, only connecting phosphine for 1-3 seconds, and opening the doping source for 2-4 seconds to finish the growth of one period; thus carrying out 5-20 cycles of cyclic growth;
and/or forming a delta-doped n-type GaAs layer in an emission layer of the GaAs mesobattery, growing GaAs which is not passed through silane for 2-4 nm by adopting a metal organic compound chemical vapor deposition method, then passing through arsine for 1-3 seconds, then opening silane for 2-4 seconds, completing the growth of one period, and thus performing the cyclic growth for 6-30 periods.
2. The method for preparing the epitaxial structure of the GaAs solar cell of claim 1, wherein the back layer of the GaAs intermediate cell further comprises a p-type GaInP layer grown by direct doping attached to the surface of the delta-doped p-type GaInP layer close to the Ge base cell, and the emission layer further comprises an n-type GaAs layer grown by direct doping attached to the surface of the delta-doped n-type GaAs layer close to the Ge base cell;
and/or the back layer of the GaInP top cell further comprises a p-type GaInP layer which is attached to the surface of the delta-doped p-type GaInP layer close to the Ge bottom cell and is grown through direct doping, and the emission layer further comprises an n-type GaInP layer which is attached to the surface of the delta-doped n-type GaInP layer close to the Ge bottom cell and is grown through direct doping.
3. The method for preparing the epitaxial structure of the GaAs solar cell according to claim 2, wherein in the back layer of the GaAs mesocell, the thickness of the p-type GaInP layer grown by direct doping is 20 to 40nm, and the thickness of the p-type delta-doped GaInP layer is 20 to 40nm; in the emitting layer of the GaAs middle battery, the thickness of the n-type GaAs layer obtained by direct doping growth is 25-60 nm, and the thickness of the delta-doped n-type GaAs emitting layer is 25-60 nm;
and/or, in the back layer of the GaInP top cell, the thickness of the p-type GaInP layer obtained by direct doping growth is 20-40nm, and the thickness of the delta-doped p-type GaInP is 20-40 nm; in the emitting layer of the GaInP top cell, the thickness of the n-type GaInP layer obtained by direct doping growth is 25-60nm, and the thickness of the delta-doped n-type GaInP is 25-60 nm.
4. The method for preparing the epitaxial structure of the GaAs solar cell according to any one of claims 1 to 3, characterized in that, towards the Ge bottom cell, the GaAs middle cell comprises a window layer, an emitting layer, a base region and a back layer which are sequentially stacked; and the GaInP top cell comprises a contact layer, a window layer, an emitting layer, a base region and a back layer which are sequentially stacked towards the GaAs middle cell.
5. The method for preparing the epitaxial structure of the gallium arsenide solar cell as claimed in claim 1, wherein the Ge bottom cell is connected to the GaAs middle cell through a tunnel junction, and the GaAs and the GaInP top cell are connected through a tunnel junction; the tunneling junction is GaAs.
6. The method for preparing the epitaxial structure of the gallium arsenide solar cell as claimed in claim 1, wherein towards the GaAs cell, a p-type Ge substrate, an n-type Ge emitting layer and an n-type GaInP window layer are sequentially stacked in the Ge-based cell.
7. The method for preparing the epitaxial structure of the gallium arsenide solar cell according to claim 1, comprising:
forming a delta-doped p-type GaInP layer in the back layer of the GaInP top cell, growing GaInP which is not connected with a doping source and has a length of 2-4 nm by adopting a metal organic compound chemical vapor deposition method, only introducing phosphane for 1-3 seconds, opening the doping source for 2-4 seconds, completing the growth of one period, and thus carrying out the cyclic growth of 5-20 periods;
and forming a delta-doped n-type GaInP layer in the emitting layer of the GaInP top battery, growing 2-4 nm of GaInP which is not passed through silane by adopting a metal organic compound chemical vapor deposition method, then passing through phosphine for 1-3 seconds, then opening silane for 2-4 seconds to complete the growth of one period, and thus carrying out 6-30 periods of cyclic growth.
8. The method for preparing the epitaxial structure of the gallium arsenide solar cell as claimed in claim 1 or 7, wherein the condition of the metal organic compound chemical vapor deposition method is 550-850 ℃ and 50-200 torr pressure.
9. The method for preparing the epitaxial structure of the gallium arsenide solar cell as claimed in claim 8, wherein the middle cell or the top cell back layer doping source is CCl 4 、CBr 4 Or diethyl zinc.
10. A gallium arsenide solar cell epitaxial structure, wherein said gallium arsenide solar cell epitaxial structure is prepared by the preparation method of any of claims 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811548022.6A CN111341872B (en) | 2018-12-18 | 2018-12-18 | Gallium arsenide solar cell epitaxial structure and growth method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811548022.6A CN111341872B (en) | 2018-12-18 | 2018-12-18 | Gallium arsenide solar cell epitaxial structure and growth method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111341872A CN111341872A (en) | 2020-06-26 |
| CN111341872B true CN111341872B (en) | 2022-10-25 |
Family
ID=71186718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811548022.6A Active CN111341872B (en) | 2018-12-18 | 2018-12-18 | Gallium arsenide solar cell epitaxial structure and growth method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111341872B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112038419B (en) * | 2020-08-03 | 2022-04-12 | 上海空间电源研究所 | Manufacturing method of photovoltaic cell with laser energy supply and solar power generation functions |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9722131B2 (en) * | 2009-03-16 | 2017-08-01 | The Boeing Company | Highly doped layer for tunnel junctions in solar cells |
| US8828852B2 (en) * | 2009-12-10 | 2014-09-09 | California Institute Of Technology | Delta-doping at wafer level for high throughput, high yield fabrication of silicon imaging arrays |
| US9178098B2 (en) * | 2012-02-29 | 2015-11-03 | The Boeing Company | Solar cell with delta doping layer |
| CN102790120B (en) * | 2012-07-19 | 2015-04-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaInP/GaAs/Ge three-junction solar battery and manufacturing method thereof |
| CN103594540B (en) * | 2013-11-28 | 2016-02-03 | 上海空间电源研究所 | A kind of heterojunction solar cell adulterated containing interface δ |
| CN108493284B (en) * | 2018-05-03 | 2020-03-10 | 扬州乾照光电有限公司 | Lattice mismatched multi-junction solar cell and manufacturing method thereof |
-
2018
- 2018-12-18 CN CN201811548022.6A patent/CN111341872B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN111341872A (en) | 2020-06-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7126052B2 (en) | Isoelectronic surfactant induced sublattice disordering in optoelectronic devices | |
| US9214580B2 (en) | Multi-junction solar cell with dilute nitride sub-cell having graded doping | |
| King et al. | Next-generation, high-efficiency III-V multijunction solar cells | |
| US9324911B2 (en) | Methods of fabricating dilute nitride semiconductor materials for use in photoactive devices and related structures | |
| CN108493284B (en) | Lattice mismatched multi-junction solar cell and manufacturing method thereof | |
| TW200941741A (en) | Heterojunction subcells in inverted metamorphic multijunction solar cells | |
| US20150068581A1 (en) | Fabrication Method for Multi-junction Solar Cells | |
| CN109755340A (en) | Positive lattice mismatch three-junction solar cell | |
| US9337377B2 (en) | Methods of forming dilute nitride materials for use in photoactive devices and related structures | |
| CN107316909A (en) | A kind of manufacture method of MQW space GaInP/InGaAs/Ge battery epitaxial wafers | |
| CN111341872B (en) | Gallium arsenide solar cell epitaxial structure and growth method thereof | |
| CN105810760A (en) | Lattice-matched five-junction solar cell and fabrication method thereof | |
| JP6335784B2 (en) | Variable band gap solar cell | |
| CN102509742A (en) | Lattice mismatch three-section battery epitaxial growth method | |
| CN206584943U (en) | A kind of matching four-junction solar cell of positive growth | |
| CN109285908B (en) | Lattice mismatched multi-junction solar cell and manufacturing method thereof | |
| JPH11214726A (en) | Stacked solar cell | |
| Andreev et al. | GaAs/Ge heterostructure photovoltaic cells fabricated by a combination of MOCVD and zinc diffusion techniques | |
| JPH0955522A (en) | Tunnel diode | |
| Sun et al. | Importance of long-lifetime n-GaInP for high-efficiency GaInP solar cells grown by MBE | |
| CN212257428U (en) | Heterogeneous PN junction space battery epitaxial wafer | |
| Makita et al. | Highly efficient and reliable mechanically stacked multi-junction solar cells using advanced bonding method with conductive nanoparticle alignments | |
| CN111276560B (en) | Gallium arsenide solar cell and manufacturing method thereof | |
| CN108198891B (en) | Solar battery and preparation method thereof | |
| Yamaguchi et al. | Super-high-efficiency III-V tandem and multi-junction cells |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20210222 Address after: Unit 611, unit 3, 6 / F, building 1, yard 30, Yuzhi East Road, Changping District, Beijing 102208 Applicant after: Zishi Energy Co.,Ltd. Address before: Room 403, unit 2, building C, Dongfang Shengshi, Jinpai community, Buji street, Longgang District, Shenzhen, Guangdong 518112 Applicant before: Shenzhen yongshenglong Technology Co.,Ltd. |
|
| TA01 | Transfer of patent application right | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |