JP5513891B2 - エネルギー囲み障壁に埋設された量子ドットを有する中間バンド感光性デバイス - Google Patents

エネルギー囲み障壁に埋設された量子ドットを有する中間バンド感光性デバイス Download PDF

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JP5513891B2
JP5513891B2 JP2009536283A JP2009536283A JP5513891B2 JP 5513891 B2 JP5513891 B2 JP 5513891B2 JP 2009536283 A JP2009536283 A JP 2009536283A JP 2009536283 A JP2009536283 A JP 2009536283A JP 5513891 B2 JP5513891 B2 JP 5513891B2
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barrier
quantum
dot
energy
layer
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JP2010509772A (ja
JP2010509772A5 (enExample
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フォレスト，ステファン，アール．
ウェイ，グオダン
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Princeton University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Biophysics (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Photovoltaic Devices (AREA)
  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
JP2009536283A 2006-11-13 2007-11-06 エネルギー囲み障壁に埋設された量子ドットを有する中間バンド感光性デバイス Expired - Fee Related JP5513891B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/598,006 2006-11-13
US11/598,006 US7750425B2 (en) 2005-12-16 2006-11-13 Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier
PCT/US2007/023447 WO2008147392A2 (en) 2006-11-13 2007-11-06 Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

Related Child Applications (1)

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JP2013183462A Division JP5584339B2 (ja) 2006-11-13 2013-09-04 エネルギー囲み障壁に埋設された量子ドットを有する中間バンド感光性デバイス

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JP2010509772A JP2010509772A (ja) 2010-03-25
JP2010509772A5 JP2010509772A5 (enExample) 2011-12-22
JP5513891B2 true JP5513891B2 (ja) 2014-06-04

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JP2013183462A Expired - Fee Related JP5584339B2 (ja) 2006-11-13 2013-09-04 エネルギー囲み障壁に埋設された量子ドットを有する中間バンド感光性デバイス

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US (1) US7750425B2 (enExample)
EP (1) EP2084755B1 (enExample)
JP (2) JP5513891B2 (enExample)
KR (1) KR101352654B1 (enExample)
CN (1) CN101622718B (enExample)
TW (1) TWI427803B (enExample)
WO (1) WO2008147392A2 (enExample)

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US7915521B2 (en) * 2007-10-10 2011-03-29 The Trustees Of Princeton University Type II quantum dot solar cells
TWI452703B (zh) * 2007-11-16 2014-09-11 半導體能源研究所股份有限公司 光電轉換裝置及其製造方法
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JP5582638B2 (ja) * 2010-02-25 2014-09-03 独立行政法人産業技術総合研究所 太陽電池
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JP5573448B2 (ja) * 2010-07-16 2014-08-20 富士通株式会社 量子ドット型赤外線検出器の製造方法
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JP5256268B2 (ja) * 2010-10-21 2013-08-07 シャープ株式会社 太陽電池
JP5672983B2 (ja) * 2010-11-04 2015-02-18 富士通株式会社 発光半導体素子及びその製造方法
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JP5946010B2 (ja) * 2011-09-16 2016-07-05 株式会社豊田中央研究所 量子ドット太陽電池およびその製造方法
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Also Published As

Publication number Publication date
EP2084755A2 (en) 2009-08-05
CN101622718A (zh) 2010-01-06
WO2008147392A3 (en) 2009-05-14
EP2084755B1 (en) 2013-10-09
TWI427803B (zh) 2014-02-21
TW200840062A (en) 2008-10-01
JP5584339B2 (ja) 2014-09-03
US20070151592A1 (en) 2007-07-05
JP2010509772A (ja) 2010-03-25
CN101622718B (zh) 2012-04-25
KR101352654B1 (ko) 2014-01-17
KR20090089347A (ko) 2009-08-21
JP2014013927A (ja) 2014-01-23
WO2008147392A2 (en) 2008-12-04
US7750425B2 (en) 2010-07-06

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