JP5513891B2 - エネルギー囲み障壁に埋設された量子ドットを有する中間バンド感光性デバイス - Google Patents
エネルギー囲み障壁に埋設された量子ドットを有する中間バンド感光性デバイス Download PDFInfo
- Publication number
- JP5513891B2 JP5513891B2 JP2009536283A JP2009536283A JP5513891B2 JP 5513891 B2 JP5513891 B2 JP 5513891B2 JP 2009536283 A JP2009536283 A JP 2009536283A JP 2009536283 A JP2009536283 A JP 2009536283A JP 5513891 B2 JP5513891 B2 JP 5513891B2
- Authority
- JP
- Japan
- Prior art keywords
- barrier
- quantum
- dot
- energy
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000004888 barrier function Effects 0.000 title claims description 212
- 239000002096 quantum dot Substances 0.000 title claims description 163
- 239000000463 material Substances 0.000 claims description 95
- 239000004065 semiconductor Substances 0.000 claims description 64
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 61
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 59
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 45
- 230000005540 biological transmission Effects 0.000 claims description 27
- 230000005428 wave function Effects 0.000 claims description 14
- 239000010410 layer Substances 0.000 description 126
- 239000011159 matrix material Substances 0.000 description 42
- 230000007704 transition Effects 0.000 description 37
- 238000010586 diagram Methods 0.000 description 28
- 238000000034 method Methods 0.000 description 21
- 239000002800 charge carrier Substances 0.000 description 20
- 230000007423 decrease Effects 0.000 description 19
- 230000005641 tunneling Effects 0.000 description 19
- 238000006243 chemical reaction Methods 0.000 description 18
- 238000009736 wetting Methods 0.000 description 17
- 239000000969 carrier Substances 0.000 description 16
- 230000005283 ground state Effects 0.000 description 16
- 238000003795 desorption Methods 0.000 description 15
- 230000006798 recombination Effects 0.000 description 15
- 238000005215 recombination Methods 0.000 description 14
- 239000013590 bulk material Substances 0.000 description 9
- 150000001875 compounds Chemical class 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 8
- 230000005670 electromagnetic radiation Effects 0.000 description 8
- 230000005693 optoelectronics Effects 0.000 description 8
- 239000000872 buffer Substances 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- 238000013461 design Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000003574 free electron Substances 0.000 description 7
- 230000002441 reversible effect Effects 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 230000032258 transport Effects 0.000 description 7
- 230000006870 function Effects 0.000 description 6
- 239000012212 insulator Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910010272 inorganic material Inorganic materials 0.000 description 4
- 239000011147 inorganic material Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000010348 incorporation Methods 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000007405 data analysis Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000005381 potential energy Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 229910002059 quaternary alloy Inorganic materials 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- YBNMDCCMCLUHBL-UHFFFAOYSA-N (2,5-dioxopyrrolidin-1-yl) 4-pyren-1-ylbutanoate Chemical compound C=1C=C(C2=C34)C=CC3=CC=CC4=CC=C2C=1CCCC(=O)ON1C(=O)CCC1=O YBNMDCCMCLUHBL-UHFFFAOYSA-N 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- VAYOSLLFUXYJDT-RDTXWAMCSA-N Lysergic acid diethylamide Chemical compound C1=CC(C=2[C@H](N(C)C[C@@H](C=2)C(=O)N(CC)CC)C2)=C3C2=CNC3=C1 VAYOSLLFUXYJDT-RDTXWAMCSA-N 0.000 description 1
- ZSBXGIUJOOQZMP-JLNYLFASSA-N Matrine Chemical compound C1CC[C@H]2CN3C(=O)CCC[C@@H]3[C@@H]3[C@H]2N1CCC3 ZSBXGIUJOOQZMP-JLNYLFASSA-N 0.000 description 1
- 208000012868 Overgrowth Diseases 0.000 description 1
- 229910002665 PbTe Inorganic materials 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 239000013079 quasicrystal Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 239000004054 semiconductor nanocrystal Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035236—Superlattices; Multiple quantum well structures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Manufacturing & Machinery (AREA)
- General Health & Medical Sciences (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Bipolar Transistors (AREA)
Description
本出願は、2005年12月16日提出の米国出願第11/304,713号(係属中)の一部継続出願であり、その内容は参照によってここに組み入れる。
クレームした発明の一部は、以下の一以上の団体に代わっておよび/または連携して、プリンストン大学、南カリフォルニア大学およびグローバルフォトニックエネルギーコーポレーションの大学−企業間協力研究の合意によってなされた。クレームした発明の残りの部分は、以下の一以上の団体に代わっておよび/または連携して、ミシガン大学、南カリフォルニア大学およびグローバルフォトニックエネルギーコーポレーションの大学−企業間協力研究の合意によってなされた。この合意はクレームした発明の各部分のなされる前およびなされた日に有効であり、クレームした発明はこの合意の範囲の活動の結果なされたものである。
本発明は全般に感光性光電子デバイスに関する。より詳細には、本発明は無機半導体マトリックス中の中間バンドを提供する無機量子ドットを有する中間バンド感光性光電子デバイスに関する。
本発明のデバイスは、第一半導体材料の複数層および第一電極と第二電極との間に積層されて配置された囲みドット障壁(dots−in−a−fence barrier)を含む。各囲みドット障壁は、第一半導体材料の各二層間に直接接触して積層して配置される。各囲みドット障壁は、実質的に第三半導体材料の二層の間に直接接触して埋設された複数の第二半導体材料の量子ドットからなる。各量子ドットは、第一半導体材料の隣接する層の伝導バンド端と価電子バンド端との間のエネルギーの少なくとも一の量子状態を供給する。複数の量子ドットの少なくとも一の量子状態の波動関数は、少なくとも一の中間バンドとして重なっている。第三半導体材料の層は、第一半導体材料の層中の第一電子および/または第一正孔が各量子ドット中の第二材料に到達する量子力学的トンネル透過を行うために要求されるトンネル障壁として配置される。第三半導体材料の層は、第一半導体材料の層中の第二電子および/または第二正孔が、量子ドットを通ることなく、第一半導体材料の他の層に到達する量子力学的トンネル透過を行うために要求されるトンネル障壁として配置される。第一半導体材料および第三半導体材料の格子定数は、欠陥の発生を避けるために好ましくは十分に近いものである(例えば、|Δa/a|<1%)。より好ましくは、第三半導体材料は、第一半導体材料と格子整合している。
太陽電池の性能を向上するために検討されている一つの方法は、太陽電池のバンドギャップ中に、中間バンドを生成するために量子ドットを用いることである。量子ドットは電荷キャリア(電子、正孔および/または励起子)を、離散化した量子エネルギー状態に三次元的に閉じ込める。各量子ドットの断面の寸法は、典型的には数百オングストロームのオーダーであるかまたはそれより小さい。中間バンド構造は、他の方法のうちでも、ドット間の波動関数の重なりによって区別し得る。「中間」バンドは、重なった波動関数により形成された連続するミニバンドである。波動関数は重なっているが、隣り合うドットどうしに物理的接触はない。
Claims (9)
- 第一電極及び第二電極;
第一電極と第二電極との間に積層され堆積された複数の第一半導体材料の層;および、
複数の囲みドット障壁層(dots−in−a−fence barrier layer)、各囲みドット障壁層は実質的に第三半導体材料の二層の間に直接接触して埋設された複数の第二半導体材料の量子ドットからなり、ここで、各囲みドット障壁層は複数の第一半導体材料の層の各二層間に直接接触して積層して堆積される、を含み、
ここで、各量子ドットは、隣接する第一半導体材料の層の伝導バンド端と価電子バンド端との間のエネルギーの少なくとも一の量子状態を供給し、複数の量子ドットの前記少なくとも一の量子状態の波動関数は、少なくとも一の中間バンドとして重なり、
第三半導体材料の層は、第一半導体材料の層中の第一電子および/または第一正孔が各量子ドット中の第二半導体材料に到達する量子力学的トンネル透過を行うために、かつ、第一半導体材料の層中の第二電子および/または第二正孔が第一半導体材料の他の層に到達する量子力学的トンネル透過を行うために、要求されるトンネル障壁として配置され、
第一半導体材料がGaAsであり、第二半導体材料がInAsであり、第三半導体材料が、x>0であるAl x Ga 1−x Asである、デバイス。 - 第三半導体材料が第一半導体材料と格子整合している請求項1に記載のデバイス。
- 各InAs量子ドットが、2nm≦R≦10nmである平均の横方向断面2Rおよび高さlを有し;
各AlχGa1−χAs層が、0.1R≦t≦0.3Rである厚さtを有し;かつ
二の囲みドット障壁層の間に堆積された各GaAs層が、2nm≦d≦10nmである厚さdを有する請求項1または2に記載のデバイス。 - 各囲みドット障壁層間の量子ドット単位セルの周期が、2R≦L≦2R+2nmであるLであり;
隣接する囲みドット障壁層中の量子ドット単位セルの周期が、Lz=l+d+tであるLzである請求項3に記載のデバイス。 - 6nm≦R≦8nmである請求項3または4に記載のデバイス。
- 平方センチメートル当たり量子ドットが1010〜1012存在する請求項5に記載のデバイス。
- 複数のGaAs層の第一電極に最も近い第一層がnドープされ、複数のGaAs層の第二電極に最も近い第二層がpドープされ、複数のGaAs層の他の層が真性である請求項1〜6のいずれか一項に記載のデバイス。
- 各量子ドット中の上記少なくとも一の量子状態が、中間バンドを与えるInAsのバンドギャップより上の量子状態を含む請求項1〜7のいずれか一項に記載のデバイス。
- 各量子ドット中の上記少なくとも一の量子状態が、中間バンドを与えるInAsのバンドギャップより下の量子状態を含む請求項1〜7のいずれか一項に記載のデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/598,006 | 2006-11-13 | ||
US11/598,006 US7750425B2 (en) | 2005-12-16 | 2006-11-13 | Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier |
PCT/US2007/023447 WO2008147392A2 (en) | 2006-11-13 | 2007-11-06 | Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013183462A Division JP5584339B2 (ja) | 2006-11-13 | 2013-09-04 | エネルギー囲み障壁に埋設された量子ドットを有する中間バンド感光性デバイス |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010509772A JP2010509772A (ja) | 2010-03-25 |
JP2010509772A5 JP2010509772A5 (ja) | 2011-12-22 |
JP5513891B2 true JP5513891B2 (ja) | 2014-06-04 |
Family
ID=40076755
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009536283A Expired - Fee Related JP5513891B2 (ja) | 2006-11-13 | 2007-11-06 | エネルギー囲み障壁に埋設された量子ドットを有する中間バンド感光性デバイス |
JP2013183462A Expired - Fee Related JP5584339B2 (ja) | 2006-11-13 | 2013-09-04 | エネルギー囲み障壁に埋設された量子ドットを有する中間バンド感光性デバイス |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013183462A Expired - Fee Related JP5584339B2 (ja) | 2006-11-13 | 2013-09-04 | エネルギー囲み障壁に埋設された量子ドットを有する中間バンド感光性デバイス |
Country Status (7)
Country | Link |
---|---|
US (1) | US7750425B2 (ja) |
EP (1) | EP2084755B1 (ja) |
JP (2) | JP5513891B2 (ja) |
KR (1) | KR101352654B1 (ja) |
CN (1) | CN101622718B (ja) |
TW (1) | TWI427803B (ja) |
WO (1) | WO2008147392A2 (ja) |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005069387A1 (en) * | 2004-01-20 | 2005-07-28 | Cyrium Technologies Incorporated | Solar cell with epitaxially grown quantum dot material |
US9018515B2 (en) * | 2004-01-20 | 2015-04-28 | Cyrium Technologies Incorporated | Solar cell with epitaxially grown quantum dot material |
WO2008033388A2 (en) * | 2006-09-12 | 2008-03-20 | Qd Vision, Inc. | A composite including nanoparticles, methods, and products including a composite |
US8030664B2 (en) * | 2006-12-15 | 2011-10-04 | Samsung Led Co., Ltd. | Light emitting device |
US7968792B2 (en) * | 2007-03-05 | 2011-06-28 | Seagate Technology Llc | Quantum dot sensitized wide bandgap semiconductor photovoltaic devices & methods of fabricating same |
WO2009014707A2 (en) | 2007-07-23 | 2009-01-29 | Qd Vision, Inc. | Quantum dot light enhancement substrate and lighting device including same |
US7915521B2 (en) * | 2007-10-10 | 2011-03-29 | The Trustees Of Princeton University | Type II quantum dot solar cells |
TWI452703B (zh) * | 2007-11-16 | 2014-09-11 | Semiconductor Energy Lab | 光電轉換裝置及其製造方法 |
EP2075850A3 (en) * | 2007-12-28 | 2011-08-24 | Semiconductor Energy Laboratory Co, Ltd. | Photoelectric conversion device and manufacturing method thereof |
WO2009137053A1 (en) | 2008-05-06 | 2009-11-12 | Qd Vision, Inc. | Optical components, systems including an optical component, and devices |
US9207385B2 (en) | 2008-05-06 | 2015-12-08 | Qd Vision, Inc. | Lighting systems and devices including same |
WO2009151515A1 (en) | 2008-05-06 | 2009-12-17 | Qd Vision, Inc. | Solid state lighting devices including quantum confined semiconductor nanoparticles |
JP2009065142A (ja) * | 2008-08-08 | 2009-03-26 | Technical Research & Development Institute Ministry Of Defence | 量子ドット型赤外線検知器 |
TWI382551B (zh) * | 2008-11-06 | 2013-01-11 | Ind Tech Res Inst | 太陽能集光模組 |
JP5035472B2 (ja) * | 2009-07-06 | 2012-09-26 | トヨタ自動車株式会社 | 光電変換素子 |
US8933526B2 (en) * | 2009-07-15 | 2015-01-13 | First Solar, Inc. | Nanostructured functional coatings and devices |
WO2011011111A1 (en) * | 2009-07-20 | 2011-01-27 | S.O.I.Tec Silicon On Insulator Technologies | Methods of fabricating semiconductor structures and devices using quantum dot structures and related structures |
US8895840B2 (en) * | 2009-07-23 | 2014-11-25 | Toyota Jidosha Kabushiki Kaisha | Photoelectric conversion device |
US9530920B2 (en) * | 2009-08-06 | 2016-12-27 | National University Corporation Chiba University | Photoelectric conversion device |
WO2011020098A1 (en) | 2009-08-14 | 2011-02-17 | Qd Vision, Inc. | Lighting devices, an optical component for a lighting device, and methods |
GB0917747D0 (en) * | 2009-10-09 | 2009-11-25 | Univ Glasgow | Intermediate band semiconductor photovoltaic devices, uses thereof and methods for their manufacture |
JP5582638B2 (ja) * | 2010-02-25 | 2014-09-03 | 独立行政法人産業技術総合研究所 | 太陽電池 |
GB2480265B (en) * | 2010-05-10 | 2013-10-02 | Toshiba Res Europ Ltd | A semiconductor device and a method of fabricating a semiconductor device |
US9178108B2 (en) * | 2010-05-24 | 2015-11-03 | Lg Innotek Co., Ltd. | Light emitting device and light emitting device package |
JP2011249579A (ja) * | 2010-05-27 | 2011-12-08 | Fujifilm Corp | 太陽電池およびその製造方法 |
JP5935217B2 (ja) * | 2010-06-18 | 2016-06-15 | 国立大学法人 千葉大学 | 光電変換装置 |
JP5753445B2 (ja) | 2010-06-18 | 2015-07-22 | 株式会社半導体エネルギー研究所 | 光電変換装置 |
JP5573448B2 (ja) * | 2010-07-16 | 2014-08-20 | 富士通株式会社 | 量子ドット型赤外線検出器の製造方法 |
US8164092B2 (en) * | 2010-10-18 | 2012-04-24 | The University Of Utah Research Foundation | PIN structures including intrinsic gallium arsenide, devices incorporating the same, and related methods |
JP5256268B2 (ja) * | 2010-10-21 | 2013-08-07 | シャープ株式会社 | 太陽電池 |
JP5672983B2 (ja) * | 2010-11-04 | 2015-02-18 | 富士通株式会社 | 発光半導体素子及びその製造方法 |
US8331142B2 (en) * | 2010-12-16 | 2012-12-11 | Technische Universitat Berlin | Memory |
US9955148B2 (en) | 2011-01-17 | 2018-04-24 | 3D Labs Co., Ltd. | Method and system for reproducing and watching a video |
KR101189686B1 (ko) * | 2011-03-22 | 2012-10-10 | 한국표준과학연구원 | 실리콘 양자점에 의한 광활성층 및 이의 제조방법 |
EP2523218A2 (en) | 2011-05-09 | 2012-11-14 | Sharp Kabushiki Kaisha | Solar Cell |
JP5341949B2 (ja) * | 2011-05-24 | 2013-11-13 | シャープ株式会社 | 太陽電池 |
JP6240974B2 (ja) * | 2011-06-13 | 2017-12-13 | 国立大学法人東北大学 | 半導体装置 |
WO2013055429A2 (en) * | 2011-07-28 | 2013-04-18 | The Research Foundation Of State University Of New York | Quantum dot structures for efficient photovoltaic conversion, and methods of using and making the same |
JP5607589B2 (ja) * | 2011-08-26 | 2014-10-15 | トヨタ自動車株式会社 | 量子ドット配列材料並びにこれを用いた光電変換素子及び波長変換素子 |
JP2013058562A (ja) | 2011-09-07 | 2013-03-28 | Semiconductor Energy Lab Co Ltd | 光電変換装置 |
JP5946010B2 (ja) * | 2011-09-16 | 2016-07-05 | 株式会社豊田中央研究所 | 量子ドット太陽電池およびその製造方法 |
WO2013089872A2 (en) * | 2011-09-22 | 2013-06-20 | Rosestreet Labs, Llc | Band structure engineering for improved efficiency of cdte based photovoltaics |
JP5747085B2 (ja) * | 2011-10-20 | 2015-07-08 | 国立大学法人 東京大学 | 太陽電池 |
CN102436532A (zh) * | 2011-11-28 | 2012-05-02 | 华北电力大学 | InAs/GaSb超晶格电子结构的设计方法 |
US9954129B2 (en) * | 2012-05-30 | 2018-04-24 | University Of Delaware | Systems for efficient photon upconversion |
JP6055619B2 (ja) * | 2012-07-17 | 2016-12-27 | シャープ株式会社 | 太陽電池 |
WO2014100707A1 (en) * | 2012-12-20 | 2014-06-26 | The Trustees Of Boston College | Methods and systems for controlling phonon-scattering |
SG2013096607A (en) | 2012-12-27 | 2014-07-30 | Agency Science Tech & Res | Vertical light emitting diode with photonic nanostructures and method of fabrication thereof |
US9240507B2 (en) | 2014-01-28 | 2016-01-19 | Sharp Kabushiki Kaisha | Intermediate band solar cell using type I and type II quantum dot superlattices |
US9619754B2 (en) * | 2014-08-13 | 2017-04-11 | The United States Of America, As Represented By The Secretary Of The Navy | Single photon source based on a quantum dot molecule in an optical cavity |
GB201420860D0 (en) | 2014-11-24 | 2015-01-07 | Infiniled Ltd | Micro-LED device |
CN104916715B (zh) * | 2015-05-25 | 2017-09-26 | 中国电子科技集团公司第十八研究所 | 一种量子点五结太阳能电池的制备方法 |
JP6471120B2 (ja) | 2016-06-27 | 2019-02-13 | シャープ株式会社 | 光電変換素子およびそれを備えた光電変換装置 |
US10428100B2 (en) | 2017-01-13 | 2019-10-01 | Uchicago Argonne, Llc | Substituted lead halide perovskite intermediate band absorbers |
JP2018190935A (ja) * | 2017-05-11 | 2018-11-29 | シャープ株式会社 | 量子ドット型赤外線検出器 |
DE102021107136A1 (de) * | 2021-03-23 | 2022-09-29 | Otto-von-Guericke-Universität Magdeburg, Körperschaft des öffentlichen Rechts | Optoelektronisches Zugangssystem und Verfahren zur Herstellung eines nicht-duplizierbaren Schlüssels |
US11784805B2 (en) | 2022-03-07 | 2023-10-10 | Raytheon Company | Ultra high entropy material-based non-reversible spectral signature generation via quantum dots |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5079601A (en) * | 1989-12-20 | 1992-01-07 | International Business Machines Corporation | Optoelectronic devices based on intraband transitions in combinations of type i and type ii tunnel junctions |
CA2268997C (en) * | 1998-05-05 | 2005-03-22 | National Research Council Of Canada | Quantum dot infrared photodetectors (qdip) and methods of making the same |
US20020092987A1 (en) * | 1998-09-05 | 2002-07-18 | Taehee Cho | Photo detect device using quantum dots and materialization method thereof |
US6507042B1 (en) * | 1998-12-25 | 2003-01-14 | Fujitsu Limited | Semiconductor device and method of manufacturing the same |
ES2149137B1 (es) * | 1999-06-09 | 2001-11-16 | Univ Madrid Politecnica | Celula solar fotovoltaica de semiconductor de banda intermedia. |
US6380604B1 (en) * | 2000-05-18 | 2002-04-30 | Fujitsu Limited | Quantum semiconductor device having quantum dots and optical detectors using the same |
WO2002009188A1 (en) * | 2000-06-27 | 2002-01-31 | The Regents Of The University Of California | Strain-engineered, self-assembled, semiconductor quantum dot lattices |
JP3753605B2 (ja) * | 2000-11-01 | 2006-03-08 | シャープ株式会社 | 太陽電池およびその製造方法 |
TW480591B (en) * | 2001-01-15 | 2002-03-21 | Nat Science Council | Manufacture method of quantum dot infrared sensor |
WO2002082602A2 (en) * | 2001-02-28 | 2002-10-17 | The Research Foundation Of State University Of New York | Semiconductor laser with reduced temperature sensitivity |
CN1555570A (zh) * | 2001-07-31 | 2004-12-15 | ����ŵ˹�ݴ�ѧ����ίԱ�� | 量子点与量子阱耦合的半导体器件及其制造方法 |
US6773949B2 (en) * | 2001-07-31 | 2004-08-10 | The Board Of Trustees Of The University Of Illinois | Semiconductor devices and methods |
JP4583726B2 (ja) * | 2003-05-23 | 2010-11-17 | 富士通株式会社 | 量子半導体装置およびその作製方法 |
WO2005069387A1 (en) * | 2004-01-20 | 2005-07-28 | Cyrium Technologies Incorporated | Solar cell with epitaxially grown quantum dot material |
JP4905623B2 (ja) * | 2004-10-18 | 2012-03-28 | 富士通株式会社 | 太陽電池 |
ES2297972A1 (es) * | 2005-05-30 | 2008-05-01 | Universidad Politecnica De Madrid | Fotodetector de infrarrojos de banda intermedia y puntos cuanticos. |
-
2006
- 2006-11-13 US US11/598,006 patent/US7750425B2/en active Active
-
2007
- 2007-11-06 KR KR1020097011006A patent/KR101352654B1/ko not_active IP Right Cessation
- 2007-11-06 CN CN2007800421456A patent/CN101622718B/zh not_active Expired - Fee Related
- 2007-11-06 EP EP07875015.5A patent/EP2084755B1/en not_active Not-in-force
- 2007-11-06 JP JP2009536283A patent/JP5513891B2/ja not_active Expired - Fee Related
- 2007-11-06 WO PCT/US2007/023447 patent/WO2008147392A2/en active Application Filing
- 2007-11-12 TW TW096142721A patent/TWI427803B/zh not_active IP Right Cessation
-
2013
- 2013-09-04 JP JP2013183462A patent/JP5584339B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO2008147392A3 (en) | 2009-05-14 |
JP2010509772A (ja) | 2010-03-25 |
US20070151592A1 (en) | 2007-07-05 |
KR101352654B1 (ko) | 2014-01-17 |
TWI427803B (zh) | 2014-02-21 |
JP2014013927A (ja) | 2014-01-23 |
US7750425B2 (en) | 2010-07-06 |
EP2084755A2 (en) | 2009-08-05 |
WO2008147392A2 (en) | 2008-12-04 |
JP5584339B2 (ja) | 2014-09-03 |
CN101622718A (zh) | 2010-01-06 |
CN101622718B (zh) | 2012-04-25 |
KR20090089347A (ko) | 2009-08-21 |
TW200840062A (en) | 2008-10-01 |
EP2084755B1 (en) | 2013-10-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5513891B2 (ja) | エネルギー囲み障壁に埋設された量子ドットを有する中間バンド感光性デバイス | |
JP5441414B2 (ja) | トンネル障壁を有し無機マトリックス内に埋め込まれた複数の量子ドットを備える中間バンド感光性装置 | |
KR101596972B1 (ko) | 유형 ⅱ 양자점 태양전지 | |
US9240507B2 (en) | Intermediate band solar cell using type I and type II quantum dot superlattices | |
US20120160312A1 (en) | Solar cell | |
US20120285537A1 (en) | Solar cell | |
US10879420B2 (en) | Cascaded superlattice LED system | |
JP6385720B2 (ja) | 高変換効率太陽電池およびその調製方法 | |
Alnami et al. | Temperature dependent behavior of sub-monolayer quantum dot based solar cell | |
JP6258712B2 (ja) | 受光素子および受光素子を備えた太陽電池 | |
Oktyabrsky et al. | Nanoengineered quantum dot medium for space optoelectronic devices | |
US20200144429A1 (en) | Plasmonic Multiple Exciton Generation | |
Kung et al. | Photovoltaic devices based on quantum dot functionalized nanowire arrays embedded in an organic matrix | |
Hernández et al. | Towards 50% Efficiency in Solar Cells | |
Freundlich et al. | InP quantum well solar cells on inexpensive wafers for space applications | |
WO2012100038A2 (en) | Photovoltaic cells with quantum dots with built-in-charge and methods of making same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101104 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20101104 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101105 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20101105 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111031 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120817 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130305 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130603 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130610 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130703 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130710 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20130802 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20130809 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130904 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140325 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140328 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5513891 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |