JP5753445B2 - 光電変換装置 - Google Patents
光電変換装置 Download PDFInfo
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- JP5753445B2 JP5753445B2 JP2011132820A JP2011132820A JP5753445B2 JP 5753445 B2 JP5753445 B2 JP 5753445B2 JP 2011132820 A JP2011132820 A JP 2011132820A JP 2011132820 A JP2011132820 A JP 2011132820A JP 5753445 B2 JP5753445 B2 JP 5753445B2
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- 238000006243 chemical reaction Methods 0.000 title claims description 144
- 239000004065 semiconductor Substances 0.000 claims description 190
- 239000012535 impurity Substances 0.000 claims description 112
- 239000000463 material Substances 0.000 claims description 26
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 166
- 230000031700 light absorption Effects 0.000 description 23
- HEZMWWAKWCSUCB-PHDIDXHHSA-N (3R,4R)-3,4-dihydroxycyclohexa-1,5-diene-1-carboxylic acid Chemical compound O[C@@H]1C=CC(C(O)=O)=C[C@H]1O HEZMWWAKWCSUCB-PHDIDXHHSA-N 0.000 description 11
- 230000035515 penetration Effects 0.000 description 6
- 230000007246 mechanism Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 4
- 238000010248 power generation Methods 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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Description
本形態では、本発明の一態様である光電変換装置の構成について説明する。
本形態では、上記実施の形態1で説明した光電変換装置100の特性について説明する。また、適宜、上述の特許文献1に示された3端子構造の太陽電池と比較して説明する。
本形態では、上記実施の形態で説明した図1の光電変換装置100と異なる構成について説明する。具体的には、第1のセル120の第2のセル140と対向する側の面に、濃度の異なる不純物半導体領域を設けたエミッタ構造の例を説明する。なお、図1と同じ構成については同じ符号を付し、詳細な説明は省略する。
上記実施の形態に示す光電変換装置は、さまざまな電子機器に用いることができる。なお、上記実施の形態に示す光電変換装置は、複数個を接続して集積化させて用いることもできる。本実施の形態では、一例として、電子書籍の電源として用いる例を説明する。
12 上部セル
14 下部セル
18 上部電極
24 絶縁膜
26 負極
28 正極
100 光電変換装置
105 絶縁層
107 第3の電極
109 透明導電膜
120 第1のセル
140 第2のセル
200 光電変換装置
230 絶縁層
101a 第1の電極
101b 第2の電極
121n 第1の不純物半導体領域
123p 第2の不純物半導体領域
125n 第3の不純物半導体層
127p 第4の不純物半導体層
141n 第5の不純物半導体層
143i 第6の半導体層
145p 第7の不純物半導体層
226p 第4の高濃度不純物半導体領域
227p 第4の低濃度不純物半導体領域
228p 第4の不純物半導体層
9000 電子書籍
9630 筐体
9631 表示部
9632 操作キー
9633 光電変換装置
9634 充放電制御回路
9635 バッテリー
9636 DCDCコンバータ
9637 DCDCコンバータ
Claims (7)
- 第1の光電変換層を含む第1のセルと、
前記第1のセルの一方の面と接し、且つ第2の光電変換層を含む第2のセルと、
前記第1のセルの他方の面側に設けられた、第1の電極及び第2の電極と、
前記第2のセルの、前記第1のセルと接する面と反対側の面に設けられた第3の電極と、を有し、
前記第2の光電変換層は、前記第1の光電変換層に含まれる第1の材料よりもバンドギャップが大きい第2の材料を含み、
前記第1のセル及び前記第2のセルが接する接触部は、pn接合が形成されており、
前記第1のセルは、第1のn型半導体層及び第1のp型半導体層を含む第2のn型半導体層と、第2のp型半導体層と、を有し、
前記第1のn型半導体層及び前記第1のp型半導体層は、前記第2のn型半導体層の一方の面側に設けられており、
前記第1のn型半導体層は、前記第1の電極と接する領域を有し、
前記第1のp型半導体層は、前記第2の電極と接する領域を有し、
前記第2のn型半導体層の他方の面は、前記第2のp型半導体層の一方の面と接し、
前記第2のp型半導体層の他方の面は、前記第2のセルと接し、
前記第1のn型半導体層と前記第1のp型半導体層とは、互いに分離されて設けられ、
前記第1の電極と前記第2の電極とは、互いに電気的に分離されており、
前記第2のセルは、前記第3の電極と電気的に接続されていることを特徴とする光電変換装置。 - 第1の光電変換層を含む第1のセルと、
第2の光電変換層を含む第2のセルと、
前記第1のセル及び前記第2のセルの間に設けられた、開口を有する絶縁層と、
前記第1のセルを挟んで前記開口を有する絶縁層と対向する前記第1のセルの一方の面側に設けられた、第1の電極及び第2の電極と、
前記第2のセルを挟んで前記開口を有する絶縁層と対向する前記第2のセルの一方の面側に設けられた、第3の電極と、を有し、
前記第2の光電変換層は、前記第1の光電変換層に含まれる第1の材料よりもバンドギャップが大きい第2の材料を含み、
前記第1のセルは、前記開口を介して前記第2のセルと接する領域を有し、
前記第1のセル及び前記第2のセルが接する接触部は、pn接合が形成されており、
前記第1のセルは、第1のn型半導体層及び第1のp型半導体層を含む第2のn型半導体層と、第2のp型半導体層と、を有し、
前記第1のn型半導体層及び前記第1のp型半導体層は、前記第2のn型半導体層の一方の面側に設けられており、
前記第1のn型半導体層は、前記第1の電極と接する領域を有し、
前記第1のp型半導体層は、前記第2の電極と接する領域を有し、
前記第2のn型半導体層の他方の面は、前記第2のp型半導体層の一方の面と接し、
前記第2のp型半導体層の他方の面は、前記第2のセルと接し、
前記第1のn型半導体層と前記第1のp型半導体層とは、互いに分離されて設けられ、
前記第1の電極と前記第2の電極とは、互いに電気的に分離されており、
前記第2のセルは、前記第3の電極と電気的に接続されていることを特徴とする光電変換装置。 - 請求項2において、
前記第2のp型半導体層は、第1の領域と、前記第1の領域の不純物濃度よりも高い不純物濃度を有する第2の領域と、を有することを特徴とする光電変換装置。 - 請求項3において、
前記第2の領域は、前記第2のセルと接するように設けられていることを特徴とする光電変換装置。 - 請求項1乃至4のいずれか一において、
前記第1のn型半導体層の不純物濃度は、前記第2のn型半導体層の不純物濃度よりも高いことを特徴とする光電変換装置。 - 請求項1乃至5のいずれか一において、
前記第1の材料は、単結晶シリコン又は多結晶シリコンであり、
前記第2の材料は、アモルファスシリコンであることを特徴とする光電変換装置。 - 請求項1乃至6のいずれか一において、
前記第2のセル及び前記第3の電極の間に設けられた透明導電膜を有することを特徴とする光電変換装置。
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JP6818208B1 (ja) * | 2020-08-01 | 2021-01-20 | 良昭 萩原 | 光電変換半導体装置 |
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