JP2009532852A5 - - Google Patents

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Publication number
JP2009532852A5
JP2009532852A5 JP2009501016A JP2009501016A JP2009532852A5 JP 2009532852 A5 JP2009532852 A5 JP 2009532852A5 JP 2009501016 A JP2009501016 A JP 2009501016A JP 2009501016 A JP2009501016 A JP 2009501016A JP 2009532852 A5 JP2009532852 A5 JP 2009532852A5
Authority
JP
Japan
Prior art keywords
layer
photodetector
barrier layer
energy
band energy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009501016A
Other languages
English (en)
Japanese (ja)
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JP2009532852A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/IL2006/000364 external-priority patent/WO2007107973A2/en
Publication of JP2009532852A publication Critical patent/JP2009532852A/ja
Publication of JP2009532852A5 publication Critical patent/JP2009532852A5/ja
Pending legal-status Critical Current

Links

JP2009501016A 2006-03-21 2006-03-21 暗電流を低減した光検出器 Pending JP2009532852A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IL2006/000364 WO2007107973A2 (en) 2006-03-21 2006-03-21 Reduced dark current photodetector

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012003281A Division JP2012134507A (ja) 2012-01-11 2012-01-11 暗電流を低減した光検出器

Publications (2)

Publication Number Publication Date
JP2009532852A JP2009532852A (ja) 2009-09-10
JP2009532852A5 true JP2009532852A5 (enExample) 2010-08-26

Family

ID=38522821

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009501016A Pending JP2009532852A (ja) 2006-03-21 2006-03-21 暗電流を低減した光検出器

Country Status (7)

Country Link
EP (1) EP2005480B1 (enExample)
JP (1) JP2009532852A (enExample)
KR (2) KR101099105B1 (enExample)
CA (1) CA2646692C (enExample)
GB (1) GB2451202B (enExample)
IL (1) IL194231A (enExample)
WO (1) WO2007107973A2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5266521B2 (ja) * 2008-03-31 2013-08-21 旭化成エレクトロニクス株式会社 赤外線センサ、及び赤外線センサｉｃ
JP5612407B2 (ja) * 2010-09-13 2014-10-22 浜松ホトニクス株式会社 半導体受光素子及び半導体受光素子の製造方法
JP5606374B2 (ja) * 2011-03-29 2014-10-15 旭化成エレクトロニクス株式会社 量子型赤外線センサ用化合物半導体積層体の製造方法および量子型赤外線センサ
US11114480B2 (en) * 2013-03-15 2021-09-07 ActLight SA Photodetector
JP6295693B2 (ja) * 2014-02-07 2018-03-20 ソニー株式会社 撮像装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2127619B (en) * 1982-09-23 1986-07-02 Secr Defence Infrared detectors
US4731640A (en) * 1986-05-20 1988-03-15 Westinghouse Electric Corp. High resistance photoconductor structure for multi-element infrared detector arrays
US5047662A (en) 1989-08-28 1991-09-10 Motorola, Inc. Inductive load driving circuit with inductively induced voltage compensating means
US5047622A (en) * 1990-06-18 1991-09-10 The United States Of America As Represented By The Secretary Of The Navy Long wavelength infrared detector with heterojunction
JPH10256594A (ja) * 1997-03-10 1998-09-25 Fujitsu Ltd 半導体光検知装置
KR100343814B1 (en) 2000-12-08 2002-07-20 Kwangju Inst Sci & Tech Photodetector using high electron mobility transistor
US6531721B1 (en) * 2001-12-27 2003-03-11 Skyworks Solutions, Inc. Structure for a heterojunction bipolar transistor
US6740908B1 (en) * 2003-03-18 2004-05-25 Agilent Technologies, Inc. Extended drift heterostructure photodiode having enhanced electron response
IL156744A (en) * 2003-07-02 2011-02-28 Semi Conductor Devices An Elbit Systems Rafael Partnership Depletion-less photodiode with suppressed dark current
DE10357654A1 (de) * 2003-12-10 2005-07-14 Dr. Johannes Heidenhain Gmbh Abtastkopf für optische Positionsmeßsysteme
US7180066B2 (en) 2004-11-24 2007-02-20 Chang-Hua Qiu Infrared detector composed of group III-V nitrides

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