GB2451202B - Reduced dark current photodetector - Google Patents

Reduced dark current photodetector

Info

Publication number
GB2451202B
GB2451202B GB0819123.1A GB0819123A GB2451202B GB 2451202 B GB2451202 B GB 2451202B GB 0819123 A GB0819123 A GB 0819123A GB 2451202 B GB2451202 B GB 2451202B
Authority
GB
United Kingdom
Prior art keywords
dark current
reduced dark
current photodetector
photodetector
reduced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
GB0819123.1A
Other languages
English (en)
Other versions
GB0819123D0 (en
GB2451202A (en
Inventor
Shimon Maimon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of GB0819123D0 publication Critical patent/GB0819123D0/en
Publication of GB2451202A publication Critical patent/GB2451202A/en
Application granted granted Critical
Publication of GB2451202B publication Critical patent/GB2451202B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H01L31/0352—
    • H01L31/102—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
GB0819123.1A 2006-03-21 2006-03-21 Reduced dark current photodetector Active GB2451202B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IL2006/000364 WO2007107973A2 (en) 2006-03-21 2006-03-21 Reduced dark current photodetector

Publications (3)

Publication Number Publication Date
GB0819123D0 GB0819123D0 (en) 2008-11-26
GB2451202A GB2451202A (en) 2009-01-21
GB2451202B true GB2451202B (en) 2011-12-21

Family

ID=38522821

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0819123.1A Active GB2451202B (en) 2006-03-21 2006-03-21 Reduced dark current photodetector

Country Status (7)

Country Link
EP (1) EP2005480B1 (enExample)
JP (1) JP2009532852A (enExample)
KR (2) KR101099105B1 (enExample)
CA (1) CA2646692C (enExample)
GB (1) GB2451202B (enExample)
IL (1) IL194231A (enExample)
WO (1) WO2007107973A2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5266521B2 (ja) * 2008-03-31 2013-08-21 旭化成エレクトロニクス株式会社 赤外線センサ、及び赤外線センサｉｃ
JP5612407B2 (ja) * 2010-09-13 2014-10-22 浜松ホトニクス株式会社 半導体受光素子及び半導体受光素子の製造方法
JP5606374B2 (ja) * 2011-03-29 2014-10-15 旭化成エレクトロニクス株式会社 量子型赤外線センサ用化合物半導体積層体の製造方法および量子型赤外線センサ
US11114480B2 (en) * 2013-03-15 2021-09-07 ActLight SA Photodetector
JP6295693B2 (ja) * 2014-02-07 2018-03-20 ソニー株式会社 撮像装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2127619B (en) * 1982-09-23 1986-07-02 Secr Defence Infrared detectors
US4731640A (en) * 1986-05-20 1988-03-15 Westinghouse Electric Corp. High resistance photoconductor structure for multi-element infrared detector arrays
US5047662A (en) 1989-08-28 1991-09-10 Motorola, Inc. Inductive load driving circuit with inductively induced voltage compensating means
US5047622A (en) * 1990-06-18 1991-09-10 The United States Of America As Represented By The Secretary Of The Navy Long wavelength infrared detector with heterojunction
JPH10256594A (ja) * 1997-03-10 1998-09-25 Fujitsu Ltd 半導体光検知装置
KR100343814B1 (en) 2000-12-08 2002-07-20 Kwangju Inst Sci & Tech Photodetector using high electron mobility transistor
US6531721B1 (en) * 2001-12-27 2003-03-11 Skyworks Solutions, Inc. Structure for a heterojunction bipolar transistor
US6740908B1 (en) * 2003-03-18 2004-05-25 Agilent Technologies, Inc. Extended drift heterostructure photodiode having enhanced electron response
IL156744A (en) * 2003-07-02 2011-02-28 Semi Conductor Devices An Elbit Systems Rafael Partnership Depletion-less photodiode with suppressed dark current
DE10357654A1 (de) * 2003-12-10 2005-07-14 Dr. Johannes Heidenhain Gmbh Abtastkopf für optische Positionsmeßsysteme
US7180066B2 (en) 2004-11-24 2007-02-20 Chang-Hua Qiu Infrared detector composed of group III-V nitrides

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
None *

Also Published As

Publication number Publication date
CA2646692C (en) 2014-06-17
KR20090009206A (ko) 2009-01-22
CA2646692A1 (en) 2007-09-27
EP2005480A4 (en) 2013-01-09
EP2005480B1 (en) 2017-01-04
KR20100121707A (ko) 2010-11-18
KR101037213B1 (ko) 2011-05-26
WO2007107973A3 (en) 2009-04-30
GB0819123D0 (en) 2008-11-26
GB2451202A (en) 2009-01-21
WO2007107973A2 (en) 2007-09-27
KR101099105B1 (ko) 2011-12-27
JP2009532852A (ja) 2009-09-10
EP2005480A2 (en) 2008-12-24
IL194231A (en) 2014-06-30

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