JP2009532852A - 暗電流を低減した光検出器 - Google Patents

暗電流を低減した光検出器 Download PDF

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Publication number
JP2009532852A
JP2009532852A JP2009501016A JP2009501016A JP2009532852A JP 2009532852 A JP2009532852 A JP 2009532852A JP 2009501016 A JP2009501016 A JP 2009501016A JP 2009501016 A JP2009501016 A JP 2009501016A JP 2009532852 A JP2009532852 A JP 2009532852A
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Prior art keywords
layer
light absorption
doped
absorption layer
energy level
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JP2009501016A
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Japanese (ja)
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JP2009532852A5 (enExample
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シモン・マイモン
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Publication of JP2009532852A publication Critical patent/JP2009532852A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
JP2009501016A 2006-03-21 2006-03-21 暗電流を低減した光検出器 Pending JP2009532852A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IL2006/000364 WO2007107973A2 (en) 2006-03-21 2006-03-21 Reduced dark current photodetector

Related Child Applications (1)

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JP2012003281A Division JP2012134507A (ja) 2012-01-11 2012-01-11 暗電流を低減した光検出器

Publications (2)

Publication Number Publication Date
JP2009532852A true JP2009532852A (ja) 2009-09-10
JP2009532852A5 JP2009532852A5 (enExample) 2010-08-26

Family

ID=38522821

Family Applications (1)

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JP2009501016A Pending JP2009532852A (ja) 2006-03-21 2006-03-21 暗電流を低減した光検出器

Country Status (7)

Country Link
EP (1) EP2005480B1 (enExample)
JP (1) JP2009532852A (enExample)
KR (2) KR101099105B1 (enExample)
CA (1) CA2646692C (enExample)
GB (1) GB2451202B (enExample)
IL (1) IL194231A (enExample)
WO (1) WO2007107973A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012060077A (ja) * 2010-09-13 2012-03-22 Hamamatsu Photonics Kk 半導体受光素子及び半導体受光素子の製造方法
JP2012207968A (ja) * 2011-03-29 2012-10-25 Asahi Kasei Electronics Co Ltd 量子型赤外線センサ用化合物半導体積層体の製造方法および量子型赤外線センサ
JP2015149422A (ja) * 2014-02-07 2015-08-20 ソニー株式会社 受光素子、撮像素子及び撮像装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5266521B2 (ja) * 2008-03-31 2013-08-21 旭化成エレクトロニクス株式会社 赤外線センサ、及び赤外線センサｉｃ
US11114480B2 (en) * 2013-03-15 2021-09-07 ActLight SA Photodetector

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10256594A (ja) * 1997-03-10 1998-09-25 Fujitsu Ltd 半導体光検知装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2127619B (en) * 1982-09-23 1986-07-02 Secr Defence Infrared detectors
US4731640A (en) * 1986-05-20 1988-03-15 Westinghouse Electric Corp. High resistance photoconductor structure for multi-element infrared detector arrays
US5047662A (en) 1989-08-28 1991-09-10 Motorola, Inc. Inductive load driving circuit with inductively induced voltage compensating means
US5047622A (en) * 1990-06-18 1991-09-10 The United States Of America As Represented By The Secretary Of The Navy Long wavelength infrared detector with heterojunction
KR100343814B1 (en) 2000-12-08 2002-07-20 Kwangju Inst Sci & Tech Photodetector using high electron mobility transistor
US6531721B1 (en) * 2001-12-27 2003-03-11 Skyworks Solutions, Inc. Structure for a heterojunction bipolar transistor
US6740908B1 (en) * 2003-03-18 2004-05-25 Agilent Technologies, Inc. Extended drift heterostructure photodiode having enhanced electron response
IL156744A (en) * 2003-07-02 2011-02-28 Semi Conductor Devices An Elbit Systems Rafael Partnership Depletion-less photodiode with suppressed dark current
DE10357654A1 (de) * 2003-12-10 2005-07-14 Dr. Johannes Heidenhain Gmbh Abtastkopf für optische Positionsmeßsysteme
US7180066B2 (en) 2004-11-24 2007-02-20 Chang-Hua Qiu Infrared detector composed of group III-V nitrides

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10256594A (ja) * 1997-03-10 1998-09-25 Fujitsu Ltd 半導体光検知装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012060077A (ja) * 2010-09-13 2012-03-22 Hamamatsu Photonics Kk 半導体受光素子及び半導体受光素子の製造方法
JP2012207968A (ja) * 2011-03-29 2012-10-25 Asahi Kasei Electronics Co Ltd 量子型赤外線センサ用化合物半導体積層体の製造方法および量子型赤外線センサ
JP2015149422A (ja) * 2014-02-07 2015-08-20 ソニー株式会社 受光素子、撮像素子及び撮像装置
US11296245B2 (en) 2014-02-07 2022-04-05 Sony Corporation Image capturing apparatus including a compound semiconductor layer

Also Published As

Publication number Publication date
CA2646692C (en) 2014-06-17
KR20090009206A (ko) 2009-01-22
CA2646692A1 (en) 2007-09-27
EP2005480A4 (en) 2013-01-09
EP2005480B1 (en) 2017-01-04
KR20100121707A (ko) 2010-11-18
KR101037213B1 (ko) 2011-05-26
WO2007107973A3 (en) 2009-04-30
GB0819123D0 (en) 2008-11-26
GB2451202A (en) 2009-01-21
WO2007107973A2 (en) 2007-09-27
KR101099105B1 (ko) 2011-12-27
GB2451202B (en) 2011-12-21
EP2005480A2 (en) 2008-12-24
IL194231A (en) 2014-06-30

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