JP2009532852A - 暗電流を低減した光検出器 - Google Patents
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- 230000031700 light absorption Effects 0.000 claims abstract description 120
- 230000004888 barrier function Effects 0.000 claims abstract description 114
- 239000000969 carrier Substances 0.000 claims abstract description 74
- 239000004065 semiconductor Substances 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 230000005641 tunneling Effects 0.000 claims abstract description 17
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 31
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 17
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 14
- 229910005542 GaSb Inorganic materials 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 229910017115 AlSb Inorganic materials 0.000 claims description 6
- -1 InAsSb Inorganic materials 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000000407 epitaxy Methods 0.000 claims description 3
- 238000004943 liquid phase epitaxy Methods 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 239000012074 organic phase Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 15
- 239000000463 material Substances 0.000 description 12
- 238000002161 passivation Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 5
- 239000006096 absorbing agent Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
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Abstract
Description
それらの成分は、
a)空乏領域中のショットキリードホール(SRH)プロセスに関する生成電流Isrh、
b)エクストリンシック領域中のオージェまたは放射プロセスに関する拡散電流Idiff、および
c)接合の表面状態に関する表面電流Isurf、である。表面電流は、デバイスに対して行われたパッシベーションプロセスに主に依存する。
このように、Idarkは以下のように表すことができる。
Claims (34)
- 価電子帯エネルギーレベルと伝導帯エネルギーレベルとを有するnドープの半導体を含む光吸収層と、
その第1側面は光吸収層の第1側面に隣り合い、光吸収層の価電子帯エネルギーレベルと実質的に等しい価電子帯エネルギーレベルと、光吸収層の伝導帯に対して大きなバンドギャップを有する伝導帯エネルギーレベルを有するバリア層と、
ドープされた半導体を含み、バリア層の、第1側面に対向する第2側面に隣り合うコンタクト領域とを含む光検出器であって、
バリア層は所定の膜厚を有し、その膜厚とバンドギャップは、光吸収層からコンタクト領域に多数キャリアがトンネルするのを防止し、光吸収層からコンタクト領域に熱化された多数キャリアが流れるのを阻止するのに十分である光検出器。 - バリア層は、アンドープの半導体を含む請求項1に記載の光検出器。
- コンタクト領域は、nドープである請求項1に記載の光検出器。
- コンタクト領域は、光吸収層のnドープ半導体の価電子帯エネルギーレベルと実質的に等しい価電子帯エネルギーレベルを有する請求項3に記載の光検出器。
- コンタクト領域は、pドープである請求項1に記載の光検出器。
- コンタクト領域は、光吸収層のnドープ半導体の価電子帯エネルギーレベルより大きな価電子帯エネルギーレベルを有する請求項5に記載の光検出器。
- バリア層は、アンドープ半導体を含む請求項5に記載の光検出器。
- 光吸収層は、3〜5μmの波長の光エネルギーの存在によりキャリアを生成する請求項1に記載の光検出器。
- 更に、光吸収層の第2側面に隣り合う第1側面を有する基板を含み、光吸収層の第2側面は光吸収層の第1側面に対向し、基板は第1金属層と接続した第2側面を有する請求項1に記載の光検出器。
- 更に、コンタクト領域と接続した第2金属層を含む請求項9に記載の光検出器。
- バリア層は、AlSb、AlAsSb、GaAlAsSb、AlPSb、AlGaPSb、およびHgZnTeの1つを含む請求項1に記載の光検出器。
- 光吸収層は、nドープのInAs、nドープのInAsSb、nドープのInGaAs、nドープのInAs/InGaSb型のII型超格子、およびnドープのHgCdTeの1つからなる請求項11に記載の光検出器。
- コンタクト領域は、InAs、InGaAs、InAsSb、InAs/InGaSb型のII型超格子、HgCdTe、およびGaSbの1つからなる請求項12に記載の光検出器。
- コンタクト領域および光吸収層は、実質的に同じ成分を有する請求項13に記載の光検出器。
- 光吸収層およびコンタクト領域は、nドープのHgCdTeからなり、バリア層は、HgZnTeからなる請求項1に記載の光検出器。
- 光吸収層は、nドープのInAsSbからなり、バリア層は、nドープのAlGaAsSbからなり、コンタクト層は、pドープのGaSbからなる請求項1に記載の光検出器。
- 光吸収層は、光吸収長のオーダーの膜厚を有する請求項1に記載の光検出器。
- 伝導帯エネルギーレベルと価電子帯エネルギーレベルとを有するpドープの半導体を含む光吸収層と、
その第1側面は光吸収層の第1側面に隣り合い、光吸収層の伝導帯エネルギーレベルと実質的に等しい伝導帯エネルギーレベルと、光吸収層の価電子帯に対して大きなバンドギャップを有する価電子帯エネルギーレベルを有するバリア層と、
ドープされた半導体を含み、バリア層の、第1側面に対向する第2側面に隣り合うコンタクト領域とを含む光検出器であって、
バリア層は所定の膜厚を有し、その膜厚とバンドギャップは、光吸収層からコンタクト領域に多数キャリアがトンネルするのを防止し、光吸収層からコンタクト領域に熱化された多数キャリアが流れるのを阻止するのに十分である光検出器。 - バリア層は、アンドープの半導体を含む請求項18に記載の光検出器。
- コンタクト領域は、pドープである請求項18に記載の光検出器。
- コンタクト領域は、光吸収層のpドープ半導体の伝導帯エネルギーレベルと実質的に等しい伝導帯エネルギーレベルを有する請求項20に記載の光検出器。
- コンタクト領域は、nドープである請求項1に記載の光検出器。
- コンタクト領域は、光吸収層のpドープ半導体の伝導帯エネルギーレベルより小さな伝導帯エネルギーレベルを有する請求項22に記載の光検出器。
- バリア層は、アンドープ半導体を含む請求項22に記載の光検出器。
- 光吸収層は、3〜5μmの波長の光エネルギーの存在によりキャリアを生成する請求項18に記載の光検出器。
- 更に、光吸収層の第2側面に隣り合う第1側面を有する基板を含み、光吸収層の第2側面は光吸収層の第1側面に対向し、基板は第1金属層と接続した第2側面を有する請求項18に記載の光検出器。
- 更に、コンタクト領域と接続した金属層を含む請求項26に記載の光検出器。
- バリア層は、AlSb、AlAsSb、GaAlAsSb、AlPSb、AlGaPSb、InAlAs、InAlAsSb、およびHgZnTeの1つからなる請求項18に記載の光検出器。
- 光吸収層は、pドープのInAs、pドープのInAsSb、pドープのInGaAs、pドープのInAs/InGaSb型のII型超格子、およびpドープのHgCdTeの1つからなる請求項28に記載の光検出器。
- コンタクト領域は、InAs、InGaAs、InAsSb、InAs/InGaSb型のII型超格子、HgCdTe、およびGaSbの1つからなる請求項29に記載の光検出器。
- コンタクト領域および光吸収層は、実質的に同じ成分を有する請求項30に記載の光検出器。
- 基板を準備する工程と、
基板の上に、非導電性の多数キャリアと関係するエネルギーレベルを有するドープされた半導体を含む光吸収層を形成する工程と、
光吸収層の上に、所定の膜厚と、光吸収層のエネルギーレベルと実質的に等しい光吸収層の少数キャリアに関係するエネルギーレベルと、光吸収層の多数キャリアに関係するバンドギャップとを有するバリア層を形成する工程と、
光吸収層の上に、ドープされた半導体を含むコンタクト層を形成する工程とを含む光検出器の製造方法であって、
バリア層の膜厚とバンドギャップは、光吸収層からコンタクト領域に多数キャリアがトンネルするのを防止し、光吸収層からコンタクト領域に熱化された多数キャリアが流れるのを阻止するのに十分である光検出器の製造方法。 - 更に、形成したコンタクト層を選択的にエッチングして、複数のコンタクト領域を規定する工程を含む請求項32に記載の製造方法。
- 光吸収層を形成する工程、バリア層を形成する工程、およびコンタクト層を形成する工程の少なくとも1つは、分子線エピタキシー、有機金属化学気相成長、有機金属相エピタキシー、および液相エピタキシーの1つで行われる請求項32に記載の製造方法。
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Cited By (3)
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JP2012060077A (ja) * | 2010-09-13 | 2012-03-22 | Hamamatsu Photonics Kk | 半導体受光素子及び半導体受光素子の製造方法 |
JP2012207968A (ja) * | 2011-03-29 | 2012-10-25 | Asahi Kasei Electronics Co Ltd | 量子型赤外線センサ用化合物半導体積層体の製造方法および量子型赤外線センサ |
JP2015149422A (ja) * | 2014-02-07 | 2015-08-20 | ソニー株式会社 | 受光素子、撮像素子及び撮像装置 |
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JP5266521B2 (ja) * | 2008-03-31 | 2013-08-21 | 旭化成エレクトロニクス株式会社 | 赤外線センサ、及び赤外線センサic |
US11114480B2 (en) * | 2013-03-15 | 2021-09-07 | ActLight SA | Photodetector |
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- 2006-03-21 JP JP2009501016A patent/JP2009532852A/ja active Pending
- 2006-03-21 KR KR1020087025759A patent/KR101037213B1/ko not_active IP Right Cessation
- 2006-03-21 KR KR1020107024012A patent/KR101099105B1/ko not_active IP Right Cessation
- 2006-03-21 CA CA2646692A patent/CA2646692C/en not_active Expired - Fee Related
- 2006-03-21 EP EP06728174.1A patent/EP2005480B1/en active Active
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2008
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2012060077A (ja) * | 2010-09-13 | 2012-03-22 | Hamamatsu Photonics Kk | 半導体受光素子及び半導体受光素子の製造方法 |
JP2012207968A (ja) * | 2011-03-29 | 2012-10-25 | Asahi Kasei Electronics Co Ltd | 量子型赤外線センサ用化合物半導体積層体の製造方法および量子型赤外線センサ |
JP2015149422A (ja) * | 2014-02-07 | 2015-08-20 | ソニー株式会社 | 受光素子、撮像素子及び撮像装置 |
US11296245B2 (en) | 2014-02-07 | 2022-04-05 | Sony Corporation | Image capturing apparatus including a compound semiconductor layer |
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CA2646692C (en) | 2014-06-17 |
EP2005480A2 (en) | 2008-12-24 |
WO2007107973A2 (en) | 2007-09-27 |
EP2005480B1 (en) | 2017-01-04 |
IL194231A (en) | 2014-06-30 |
GB2451202B (en) | 2011-12-21 |
KR101099105B1 (ko) | 2011-12-27 |
EP2005480A4 (en) | 2013-01-09 |
WO2007107973A3 (en) | 2009-04-30 |
KR20100121707A (ko) | 2010-11-18 |
KR101037213B1 (ko) | 2011-05-26 |
KR20090009206A (ko) | 2009-01-22 |
GB2451202A (en) | 2009-01-21 |
CA2646692A1 (en) | 2007-09-27 |
GB0819123D0 (en) | 2008-11-26 |
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