GB2127619B - Infrared detectors - Google Patents
Infrared detectorsInfo
- Publication number
- GB2127619B GB2127619B GB08324749A GB8324749A GB2127619B GB 2127619 B GB2127619 B GB 2127619B GB 08324749 A GB08324749 A GB 08324749A GB 8324749 A GB8324749 A GB 8324749A GB 2127619 B GB2127619 B GB 2127619B
- Authority
- GB
- United Kingdom
- Prior art keywords
- infrared detectors
- detectors
- infrared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
- H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor the device being a bipolar phototransistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN heterojunction type
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08324749A GB2127619B (en) | 1982-09-23 | 1983-09-15 | Infrared detectors |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8227180 | 1982-09-23 | ||
GB08324749A GB2127619B (en) | 1982-09-23 | 1983-09-15 | Infrared detectors |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8324749D0 GB8324749D0 (en) | 1983-10-19 |
GB2127619A GB2127619A (en) | 1984-04-11 |
GB2127619B true GB2127619B (en) | 1986-07-02 |
Family
ID=26283927
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08324749A Expired GB2127619B (en) | 1982-09-23 | 1983-09-15 | Infrared detectors |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2127619B (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IL99592A (en) * | 1991-09-27 | 1995-05-26 | Bendix Avelex Inc | Thermal imaging apparatus |
US5438199A (en) * | 1994-09-06 | 1995-08-01 | Alliedsignal Inc. | Thermal imaging apparatus with bias modulation |
US7129489B2 (en) * | 2004-12-03 | 2006-10-31 | Raytheon Company | Method and apparatus providing single bump, multi-color pixel architecture |
US11245048B2 (en) | 2006-03-19 | 2022-02-08 | Shimon Maimon | Reduced dark current photodetector with charge compensated barrier layer |
USRE48693E1 (en) | 2006-03-19 | 2021-08-17 | Shimon Maimon | Application of reduced dark current photodetector with a thermoelectric cooler |
USRE48642E1 (en) | 2006-03-19 | 2021-07-13 | Shimon Maimon | Application of reduced dark current photodetector |
US9766130B2 (en) | 2006-03-19 | 2017-09-19 | Shimon Maimon | Application of reduced dark current photodetector with a thermoelectric cooler |
US11264528B2 (en) | 2006-03-19 | 2022-03-01 | Shimon Maimon | Reduced dark current photodetector with charge compensated barrier layer |
KR101037213B1 (en) | 2006-03-21 | 2011-05-26 | 쉬몬 마이몬 | Reduced dark current photodetector |
US9647155B1 (en) | 2012-09-08 | 2017-05-09 | Shimon Maimon | Long wave photo-detection device for used in long wave infrared detection, materials, and method of fabrication |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1450627A (en) * | 1974-01-29 | 1976-09-22 | Standard Telephones Cables Ltd | Opto-electronic devices |
GB1597538A (en) * | 1977-03-31 | 1981-09-09 | Ford Motor Co | Photovoltaic semiconductor device having increased detectivity and decreased capacitance |
-
1983
- 1983-09-15 GB GB08324749A patent/GB2127619B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB2127619A (en) | 1984-04-11 |
GB8324749D0 (en) | 1983-10-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
732E | Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977) | ||
PE20 | Patent expired after termination of 20 years |