GB1450627A - Opto-electronic devices - Google Patents

Opto-electronic devices

Info

Publication number
GB1450627A
GB1450627A GB407174A GB407174A GB1450627A GB 1450627 A GB1450627 A GB 1450627A GB 407174 A GB407174 A GB 407174A GB 407174 A GB407174 A GB 407174A GB 1450627 A GB1450627 A GB 1450627A
Authority
GB
United Kingdom
Prior art keywords
layer
type
barrier layer
band
photo
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB407174A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB407174A priority Critical patent/GB1450627A/en
Priority to DE19752502865 priority patent/DE2502865A1/en
Priority to FR7502689A priority patent/FR2259442B3/fr
Publication of GB1450627A publication Critical patent/GB1450627A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

1450627 Semi-conductor device; photocathode STANDARD TELEPHONES & CABLES Ltd 29 Jan 1974 4071/74 Headings H1K and H1D An opto-electronic heterostructive semiconductor device, e.g. a photocathode, image converter, photodiode or photo-transistor, includes an N-type barrier layer sandwiched between a P-type photo-responsive layer, of material having a band gap less than that of the barrier layer, and a P-type layer of material having a band gap greater than that of the photo-responsive layer but not greater than that of the barrier layer, wherein the doping level of the barrier layer is such that at the mid-point of the layer its conduction band is at a level, in the unbiased condition, substantially midway between the levels of the flat portions of the conduction bands of the two adjacent P-type layers. The heterojunction boundaries may be sharp, as shown in Figs. 2(a) with the spikes in the conduction band being due to space charge effects, or the boundaries may be graded, as shown in Figs. 2(b). In addition, the doping level and thickness of the barrier layer must be such that, upon application of an electrical bias sufficient to align the conduction bands of the two P-type layers, the width of the depletion layer is greater than the thickness of the barrier layer, and the width and depth of the potential barrier in the valence band of the barrier layer must be sufficient to block tunnelling of holes into the photoresponsive, while the spikes, if present, in the conduction band are sufficiently narrow to permit tunneling into the other P-type layer of electrons raised to the conduction band by radiation incident on the photoresponsive layer. Specific examples are given for a (Ga x In 1-x )(As y P 1-y ) semiconductor system in which, preferably, the doping levels are the same in all three layers. The exposed face of the second P-type layer may be coated with caesium oxide to promote electron emission therefrom. Alternatively this coating may be replaced by a further N-type layer to convert the device to a photodiode, and an additional P-type layer on top of this may convert the device to a phototransistor.
GB407174A 1974-01-29 1974-01-29 Opto-electronic devices Expired GB1450627A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB407174A GB1450627A (en) 1974-01-29 1974-01-29 Opto-electronic devices
DE19752502865 DE2502865A1 (en) 1974-01-29 1975-01-24 OPTOELECTRONIC SEMICONDUCTOR COMPONENT
FR7502689A FR2259442B3 (en) 1974-01-29 1975-01-29

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB407174A GB1450627A (en) 1974-01-29 1974-01-29 Opto-electronic devices

Publications (1)

Publication Number Publication Date
GB1450627A true GB1450627A (en) 1976-09-22

Family

ID=9770194

Family Applications (1)

Application Number Title Priority Date Filing Date
GB407174A Expired GB1450627A (en) 1974-01-29 1974-01-29 Opto-electronic devices

Country Status (3)

Country Link
DE (1) DE2502865A1 (en)
FR (1) FR2259442B3 (en)
GB (1) GB1450627A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4206002A (en) * 1976-10-19 1980-06-03 University Of Pittsburgh Graded band gap multi-junction solar energy cell
GB2127619A (en) * 1982-09-23 1984-04-11 Secr Defence Infrared detectors
US4679063A (en) * 1982-09-23 1987-07-07 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Infra red detectors

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6025913B2 (en) * 1980-11-03 1985-06-20 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン energy conversion device
DE3441922C2 (en) * 1984-11-16 1986-10-02 Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn Photocathode for the infrared range
FR2591032B1 (en) * 1985-11-29 1988-01-08 Thomson Csf LOW DARK CURRENT PHOTOCATHODE
DE3917685A1 (en) * 1989-05-31 1990-12-06 Telefunken Electronic Gmbh Majority charge carrier-device - with semiconductor layer system having band-gap decreasing towards surface

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4206002A (en) * 1976-10-19 1980-06-03 University Of Pittsburgh Graded band gap multi-junction solar energy cell
GB2127619A (en) * 1982-09-23 1984-04-11 Secr Defence Infrared detectors
US4679063A (en) * 1982-09-23 1987-07-07 The Secretary Of State For Defence In Her Britannic Majesty's Government Of The United Kingdom Of Great Britain And Northern Ireland Infra red detectors

Also Published As

Publication number Publication date
DE2502865A1 (en) 1975-07-31
FR2259442B3 (en) 1977-10-21
FR2259442A1 (en) 1975-08-22

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Legal Events

Date Code Title Description
PS Patent sealed
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee