IL194231A - Limited current dark current detector - Google Patents
Limited current dark current detectorInfo
- Publication number
- IL194231A IL194231A IL194231A IL19423108A IL194231A IL 194231 A IL194231 A IL 194231A IL 194231 A IL194231 A IL 194231A IL 19423108 A IL19423108 A IL 19423108A IL 194231 A IL194231 A IL 194231A
- Authority
- IL
- Israel
- Prior art keywords
- layer
- doped
- photo
- band energy
- detector according
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 claims description 119
- 239000000969 carrier Substances 0.000 claims description 72
- 229910000673 Indium arsenide Inorganic materials 0.000 claims description 31
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 30
- 230000001747 exhibiting effect Effects 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 230000005641 tunneling Effects 0.000 claims description 16
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 14
- 238000010521 absorption reaction Methods 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 14
- 238000002161 passivation Methods 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 10
- 229910005542 GaSb Inorganic materials 0.000 claims description 8
- 229910017115 AlSb Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 description 15
- 238000000151 deposition Methods 0.000 description 9
- 230000005284 excitation Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 241000283986 Lepus Species 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- SYHGEUNFJIGTRX-UHFFFAOYSA-N methylenedioxypyrovalerone Chemical compound C=1C=C2OCOC2=CC=1C(=O)C(CCC)N1CCCC1 SYHGEUNFJIGTRX-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 239000012074 organic phase Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 238000001931 thermography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/147—Shapes of bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/IL2006/000364 WO2007107973A2 (en) | 2006-03-21 | 2006-03-21 | Reduced dark current photodetector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IL194231A true IL194231A (en) | 2014-06-30 |
Family
ID=38522821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IL194231A IL194231A (en) | 2006-03-21 | 2008-09-21 | Limited current dark current detector |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP2005480B1 (enExample) |
| JP (1) | JP2009532852A (enExample) |
| KR (2) | KR101099105B1 (enExample) |
| CA (1) | CA2646692C (enExample) |
| GB (1) | GB2451202B (enExample) |
| IL (1) | IL194231A (enExample) |
| WO (1) | WO2007107973A2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5266521B2 (ja) * | 2008-03-31 | 2013-08-21 | 旭化成エレクトロニクス株式会社 | 赤外線センサ、及び赤外線センサｉｃ |
| JP5612407B2 (ja) * | 2010-09-13 | 2014-10-22 | 浜松ホトニクス株式会社 | 半導体受光素子及び半導体受光素子の製造方法 |
| JP5606374B2 (ja) * | 2011-03-29 | 2014-10-15 | 旭化成エレクトロニクス株式会社 | 量子型赤外線センサ用化合物半導体積層体の製造方法および量子型赤外線センサ |
| US11114480B2 (en) * | 2013-03-15 | 2021-09-07 | ActLight SA | Photodetector |
| JP6295693B2 (ja) * | 2014-02-07 | 2018-03-20 | ソニー株式会社 | 撮像装置 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2127619B (en) * | 1982-09-23 | 1986-07-02 | Secr Defence | Infrared detectors |
| US4731640A (en) * | 1986-05-20 | 1988-03-15 | Westinghouse Electric Corp. | High resistance photoconductor structure for multi-element infrared detector arrays |
| US5047662A (en) | 1989-08-28 | 1991-09-10 | Motorola, Inc. | Inductive load driving circuit with inductively induced voltage compensating means |
| US5047622A (en) * | 1990-06-18 | 1991-09-10 | The United States Of America As Represented By The Secretary Of The Navy | Long wavelength infrared detector with heterojunction |
| JPH10256594A (ja) * | 1997-03-10 | 1998-09-25 | Fujitsu Ltd | 半導体光検知装置 |
| KR100343814B1 (en) | 2000-12-08 | 2002-07-20 | Kwangju Inst Sci & Tech | Photodetector using high electron mobility transistor |
| US6531721B1 (en) * | 2001-12-27 | 2003-03-11 | Skyworks Solutions, Inc. | Structure for a heterojunction bipolar transistor |
| US6740908B1 (en) * | 2003-03-18 | 2004-05-25 | Agilent Technologies, Inc. | Extended drift heterostructure photodiode having enhanced electron response |
| IL156744A (en) * | 2003-07-02 | 2011-02-28 | Semi Conductor Devices An Elbit Systems Rafael Partnership | Depletion-less photodiode with suppressed dark current |
| DE10357654A1 (de) * | 2003-12-10 | 2005-07-14 | Dr. Johannes Heidenhain Gmbh | Abtastkopf für optische Positionsmeßsysteme |
| US7180066B2 (en) | 2004-11-24 | 2007-02-20 | Chang-Hua Qiu | Infrared detector composed of group III-V nitrides |
-
2006
- 2006-03-21 CA CA2646692A patent/CA2646692C/en not_active Expired - Fee Related
- 2006-03-21 KR KR1020107024012A patent/KR101099105B1/ko not_active Expired - Fee Related
- 2006-03-21 KR KR1020087025759A patent/KR101037213B1/ko not_active Expired - Fee Related
- 2006-03-21 GB GB0819123.1A patent/GB2451202B/en active Active
- 2006-03-21 JP JP2009501016A patent/JP2009532852A/ja active Pending
- 2006-03-21 WO PCT/IL2006/000364 patent/WO2007107973A2/en not_active Ceased
- 2006-03-21 EP EP06728174.1A patent/EP2005480B1/en active Active
-
2008
- 2008-09-21 IL IL194231A patent/IL194231A/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| CA2646692C (en) | 2014-06-17 |
| KR20090009206A (ko) | 2009-01-22 |
| CA2646692A1 (en) | 2007-09-27 |
| EP2005480A4 (en) | 2013-01-09 |
| EP2005480B1 (en) | 2017-01-04 |
| KR20100121707A (ko) | 2010-11-18 |
| KR101037213B1 (ko) | 2011-05-26 |
| WO2007107973A3 (en) | 2009-04-30 |
| GB0819123D0 (en) | 2008-11-26 |
| GB2451202A (en) | 2009-01-21 |
| WO2007107973A2 (en) | 2007-09-27 |
| KR101099105B1 (ko) | 2011-12-27 |
| JP2009532852A (ja) | 2009-09-10 |
| GB2451202B (en) | 2011-12-21 |
| EP2005480A2 (en) | 2008-12-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FF | Patent granted | ||
| KB | Patent renewed | ||
| KB | Patent renewed | ||
| KB | Patent renewed |