KR101099105B1 - 감소된 암전류 광검출기 - Google Patents

감소된 암전류 광검출기 Download PDF

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Publication number
KR101099105B1
KR101099105B1 KR1020107024012A KR20107024012A KR101099105B1 KR 101099105 B1 KR101099105 B1 KR 101099105B1 KR 1020107024012 A KR1020107024012 A KR 1020107024012A KR 20107024012 A KR20107024012 A KR 20107024012A KR 101099105 B1 KR101099105 B1 KR 101099105B1
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South Korea
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layer
light absorbing
absorbing layer
barrier layer
contact
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English (en)
Korean (ko)
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KR20100121707A (ko
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쉬몬 마이몬
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쉬몬 마이몬
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

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  • Light Receiving Elements (AREA)
KR1020107024012A 2006-03-21 2006-03-21 감소된 암전류 광검출기 Expired - Fee Related KR101099105B1 (ko)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/IL2006/000364 WO2007107973A2 (en) 2006-03-21 2006-03-21 Reduced dark current photodetector

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020087025759A Division KR101037213B1 (ko) 2006-03-21 2006-03-21 감소된 암전류 광검출기

Publications (2)

Publication Number Publication Date
KR20100121707A KR20100121707A (ko) 2010-11-18
KR101099105B1 true KR101099105B1 (ko) 2011-12-27

Family

ID=38522821

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020107024012A Expired - Fee Related KR101099105B1 (ko) 2006-03-21 2006-03-21 감소된 암전류 광검출기
KR1020087025759A Expired - Fee Related KR101037213B1 (ko) 2006-03-21 2006-03-21 감소된 암전류 광검출기

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020087025759A Expired - Fee Related KR101037213B1 (ko) 2006-03-21 2006-03-21 감소된 암전류 광검출기

Country Status (7)

Country Link
EP (1) EP2005480B1 (enExample)
JP (1) JP2009532852A (enExample)
KR (2) KR101099105B1 (enExample)
CA (1) CA2646692C (enExample)
GB (1) GB2451202B (enExample)
IL (1) IL194231A (enExample)
WO (1) WO2007107973A2 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5266521B2 (ja) * 2008-03-31 2013-08-21 旭化成エレクトロニクス株式会社 赤外線センサ、及び赤外線センサｉｃ
JP5612407B2 (ja) * 2010-09-13 2014-10-22 浜松ホトニクス株式会社 半導体受光素子及び半導体受光素子の製造方法
JP5606374B2 (ja) * 2011-03-29 2014-10-15 旭化成エレクトロニクス株式会社 量子型赤外線センサ用化合物半導体積層体の製造方法および量子型赤外線センサ
US11114480B2 (en) * 2013-03-15 2021-09-07 ActLight SA Photodetector
JP6295693B2 (ja) * 2014-02-07 2018-03-20 ソニー株式会社 撮像装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005004243A1 (en) * 2003-07-02 2005-01-13 Semi-Conductor Devices - An Elbit Systems - Rafael Partnership Depletion-less photodiode with suppressed dark current and method for producing the same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2127619B (en) * 1982-09-23 1986-07-02 Secr Defence Infrared detectors
US4731640A (en) * 1986-05-20 1988-03-15 Westinghouse Electric Corp. High resistance photoconductor structure for multi-element infrared detector arrays
US5047662A (en) 1989-08-28 1991-09-10 Motorola, Inc. Inductive load driving circuit with inductively induced voltage compensating means
US5047622A (en) * 1990-06-18 1991-09-10 The United States Of America As Represented By The Secretary Of The Navy Long wavelength infrared detector with heterojunction
JPH10256594A (ja) * 1997-03-10 1998-09-25 Fujitsu Ltd 半導体光検知装置
KR100343814B1 (en) 2000-12-08 2002-07-20 Kwangju Inst Sci & Tech Photodetector using high electron mobility transistor
US6531721B1 (en) * 2001-12-27 2003-03-11 Skyworks Solutions, Inc. Structure for a heterojunction bipolar transistor
US6740908B1 (en) * 2003-03-18 2004-05-25 Agilent Technologies, Inc. Extended drift heterostructure photodiode having enhanced electron response
DE10357654A1 (de) * 2003-12-10 2005-07-14 Dr. Johannes Heidenhain Gmbh Abtastkopf für optische Positionsmeßsysteme
US7180066B2 (en) 2004-11-24 2007-02-20 Chang-Hua Qiu Infrared detector composed of group III-V nitrides

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005004243A1 (en) * 2003-07-02 2005-01-13 Semi-Conductor Devices - An Elbit Systems - Rafael Partnership Depletion-less photodiode with suppressed dark current and method for producing the same

Also Published As

Publication number Publication date
CA2646692C (en) 2014-06-17
KR20090009206A (ko) 2009-01-22
CA2646692A1 (en) 2007-09-27
EP2005480A4 (en) 2013-01-09
EP2005480B1 (en) 2017-01-04
KR20100121707A (ko) 2010-11-18
KR101037213B1 (ko) 2011-05-26
WO2007107973A3 (en) 2009-04-30
GB0819123D0 (en) 2008-11-26
GB2451202A (en) 2009-01-21
WO2007107973A2 (en) 2007-09-27
JP2009532852A (ja) 2009-09-10
GB2451202B (en) 2011-12-21
EP2005480A2 (en) 2008-12-24
IL194231A (en) 2014-06-30

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