CH670173A5 - - Google Patents

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Publication number
CH670173A5
CH670173A5 CH2233/86A CH223386A CH670173A5 CH 670173 A5 CH670173 A5 CH 670173A5 CH 2233/86 A CH2233/86 A CH 2233/86A CH 223386 A CH223386 A CH 223386A CH 670173 A5 CH670173 A5 CH 670173A5
Authority
CH
Switzerland
Prior art keywords
cathode
gate
wall layers
trench walls
power semiconductor
Prior art date
Application number
CH2233/86A
Other languages
German (de)
English (en)
Inventor
Horst Dr Gruening
Original Assignee
Bbc Brown Boveri & Cie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bbc Brown Boveri & Cie filed Critical Bbc Brown Boveri & Cie
Priority to CH2233/86A priority Critical patent/CH670173A5/de
Priority to DE8787107918T priority patent/DE3785488D1/de
Priority to JP62138839A priority patent/JPS62291173A/ja
Priority to EP87107918A priority patent/EP0249122B1/de
Priority to US07/319,916 priority patent/US4952990A/en
Publication of CH670173A5 publication Critical patent/CH670173A5/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H10D18/65—Gate-turn-off devices  with turn-off by field effect 
    • H10D18/655—Gate-turn-off devices  with turn-off by field effect  produced by insulated gate structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices

Landscapes

  • Thyristors (AREA)
CH2233/86A 1986-06-03 1986-06-03 CH670173A5 (enExample)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CH2233/86A CH670173A5 (enExample) 1986-06-03 1986-06-03
DE8787107918T DE3785488D1 (de) 1986-06-03 1987-06-02 Abschaltbares leistungshalbleiterbauelement.
JP62138839A JPS62291173A (ja) 1986-06-03 1987-06-02 遮断可能な高出力半導体素子
EP87107918A EP0249122B1 (de) 1986-06-03 1987-06-02 Abschaltbares Leistungshalbleiterbauelement
US07/319,916 US4952990A (en) 1986-06-03 1989-03-06 Gate turn-off power semiconductor component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH2233/86A CH670173A5 (enExample) 1986-06-03 1986-06-03

Publications (1)

Publication Number Publication Date
CH670173A5 true CH670173A5 (enExample) 1989-05-12

Family

ID=4228973

Family Applications (1)

Application Number Title Priority Date Filing Date
CH2233/86A CH670173A5 (enExample) 1986-06-03 1986-06-03

Country Status (5)

Country Link
US (1) US4952990A (enExample)
EP (1) EP0249122B1 (enExample)
JP (1) JPS62291173A (enExample)
CH (1) CH670173A5 (enExample)
DE (1) DE3785488D1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0317802A1 (de) * 1987-11-25 1989-05-31 BBC Brown Boveri AG Abschaltbares Leistungshalbleiterbauelement sowie Verfahren zu dessen Herstellung
FR2679068B1 (fr) * 1991-07-10 1997-04-25 France Telecom Procede de fabrication d'un transistor a effet de champ vertical, et transistor obtenu par ce procede.
JP2751910B2 (ja) * 1996-02-28 1998-05-18 日本電気株式会社 半導体受光素子及びその製造方法
DE19648041B4 (de) * 1996-11-20 2010-07-15 Robert Bosch Gmbh Integriertes vertikales Halbleiterbauelement
US5940689A (en) * 1997-06-30 1999-08-17 Harris Corporation Method of fabricating UMOS semiconductor devices using a self-aligned, reduced mask process
JP2001024182A (ja) * 1999-07-12 2001-01-26 Ngk Insulators Ltd 半導体装置
JP4696964B2 (ja) * 2005-07-15 2011-06-08 ソニー株式会社 メモリ用の半導体装置
JP2013530527A (ja) * 2010-05-25 2013-07-25 エスエス エスシー アイピー、エルエルシー 逆方向バイアス下においてゲート−ソース漏れが低減された自己整合半導体デバイスおよび作製方法
US9203041B2 (en) 2014-01-31 2015-12-01 International Business Machines Corporation Carbon nanotube transistor having extended contacts
US11545585B2 (en) * 2020-08-21 2023-01-03 Monolithic Power Systems, Inc. Single sided channel mesa power junction field effect transistor
US12206028B2 (en) 2020-08-21 2025-01-21 Monolithic Power Systems, Inc. Single sided channel mesa power junction field effect transistor

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4037245A (en) * 1975-11-28 1977-07-19 General Electric Company Electric field controlled diode with a current controlling surface grid
EP0038248A1 (fr) * 1980-04-14 1981-10-21 Thomson-Csf Transistor à effet de champ à jonction de puissance à fonctionnement vertical, et procédé de fabrication
EP0121068A1 (de) * 1983-03-31 1984-10-10 BBC Brown Boveri AG Leistungshalbleiterbauelement und Verfahren zu dessen Herstellung
US4476622A (en) * 1981-12-24 1984-10-16 Gte Laboratories Inc. Recessed gate static induction transistor fabrication
EP0178387A2 (de) * 1984-10-19 1986-04-23 BBC Brown Boveri AG Abschaltbares Leistungshalbleiterbauelement

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4514747A (en) * 1978-08-07 1985-04-30 Hitachi, Ltd. Field controlled thyristor with double-diffused source region
JPS57172765A (en) * 1981-04-17 1982-10-23 Semiconductor Res Found Electrostatic induction thyristor
JPS57173974A (en) * 1981-04-20 1982-10-26 Hitachi Ltd Semiconductor device
US4571815A (en) * 1981-11-23 1986-02-25 General Electric Company Method of making vertical channel field controlled device employing a recessed gate structure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4037245A (en) * 1975-11-28 1977-07-19 General Electric Company Electric field controlled diode with a current controlling surface grid
EP0038248A1 (fr) * 1980-04-14 1981-10-21 Thomson-Csf Transistor à effet de champ à jonction de puissance à fonctionnement vertical, et procédé de fabrication
US4476622A (en) * 1981-12-24 1984-10-16 Gte Laboratories Inc. Recessed gate static induction transistor fabrication
EP0121068A1 (de) * 1983-03-31 1984-10-10 BBC Brown Boveri AG Leistungshalbleiterbauelement und Verfahren zu dessen Herstellung
EP0178387A2 (de) * 1984-10-19 1986-04-23 BBC Brown Boveri AG Abschaltbares Leistungshalbleiterbauelement

Also Published As

Publication number Publication date
EP0249122B1 (de) 1993-04-21
US4952990A (en) 1990-08-28
EP0249122A1 (de) 1987-12-16
JPS62291173A (ja) 1987-12-17
DE3785488D1 (de) 1993-05-27

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