JP2013530527A - 逆方向バイアス下においてゲート−ソース漏れが低減された自己整合半導体デバイスおよび作製方法 - Google Patents

逆方向バイアス下においてゲート−ソース漏れが低減された自己整合半導体デバイスおよび作製方法 Download PDF

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JP2013530527A
JP2013530527A JP2013512093A JP2013512093A JP2013530527A JP 2013530527 A JP2013530527 A JP 2013530527A JP 2013512093 A JP2013512093 A JP 2013512093A JP 2013512093 A JP2013512093 A JP 2013512093A JP 2013530527 A JP2013530527 A JP 2013530527A
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semiconductor device
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JP2013530527A5 (enExample
Inventor
アンドリュー リトナー，
デビッド シー． シェリダン，
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エスエス エスシー アイピー、エルエルシー
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Publication of JP2013530527A publication Critical patent/JP2013530527A/ja
Publication of JP2013530527A5 publication Critical patent/JP2013530527A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H10D30/0512—Manufacture or treatment of FETs having PN junction gates of FETs having PN homojunction gates
    • H10D30/0515—Manufacture or treatment of FETs having PN junction gates of FETs having PN homojunction gates of vertical FETs having PN homojunction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

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  • Junction Field-Effect Transistors (AREA)
JP2013512093A 2010-05-25 2011-05-20 逆方向バイアス下においてゲート−ソース漏れが低減された自己整合半導体デバイスおよび作製方法 Pending JP2013530527A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US34792810P 2010-05-25 2010-05-25
US61/347,928 2010-05-25
PCT/US2011/037275 WO2011149768A2 (en) 2010-05-25 2011-05-20 Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making

Publications (2)

Publication Number Publication Date
JP2013530527A true JP2013530527A (ja) 2013-07-25
JP2013530527A5 JP2013530527A5 (enExample) 2013-10-31

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JP2013512093A Pending JP2013530527A (ja) 2010-05-25 2011-05-20 逆方向バイアス下においてゲート−ソース漏れが低減された自己整合半導体デバイスおよび作製方法

Country Status (6)

Country Link
US (2) US8659057B2 (enExample)
EP (1) EP2577735A4 (enExample)
JP (1) JP2013530527A (enExample)
CN (1) CN103038886A (enExample)
TW (1) TW201208076A (enExample)
WO (1) WO2011149768A2 (enExample)

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US7977713B2 (en) * 2008-05-08 2011-07-12 Semisouth Laboratories, Inc. Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
US9006800B2 (en) * 2011-12-14 2015-04-14 Avogy, Inc. Ingan ohmic source contacts for vertical power devices
US20140145201A1 (en) * 2012-11-29 2014-05-29 Avogy, Inc. Method and system for gallium nitride vertical jfet with separated gate and source
US10727339B2 (en) 2014-03-28 2020-07-28 Intel Corporation Selectively regrown top contact for vertical semiconductor devices
US9935102B1 (en) 2016-10-05 2018-04-03 International Business Machines Corporation Method and structure for improving vertical transistor
US11245027B2 (en) * 2020-03-10 2022-02-08 International Business Machines Corporation Bottom source/drain etch with fin-cut-last-VTFET
US20230327026A1 (en) * 2022-03-25 2023-10-12 Wolfspeed, Inc. Power semiconductor device with shallow conduction region
DE102023208539A1 (de) 2023-08-10 2025-02-13 Infineon Technologies Austria Ag Transistorvorrichtung und verfahren

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JP2004134547A (ja) * 2002-10-10 2004-04-30 Hitachi Ltd 半導体装置
JP2007128965A (ja) * 2005-11-01 2007-05-24 Renesas Technology Corp スイッチング半導体装置及びその製造方法
US20080308838A1 (en) * 2007-06-13 2008-12-18 Mcnutt Ty R Power switching transistors
WO2010054073A2 (en) * 2008-11-05 2010-05-14 Semisouth Laboratories, Inc. Vertical junction field effect transistors having sloped sidewalls and methods of making

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JPH09504656A (ja) * 1994-07-01 1997-05-06 ダイムラー−ベンツ アクチエンゲゼルシャフト ＳｉＣ製電界効果トランジスタ及びその製造方法
JP2004134547A (ja) * 2002-10-10 2004-04-30 Hitachi Ltd 半導体装置
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US20080308838A1 (en) * 2007-06-13 2008-12-18 Mcnutt Ty R Power switching transistors
WO2008156674A1 (en) * 2007-06-13 2008-12-24 Northrop Grumman Systems Corporation Improved power switching transistors
WO2010054073A2 (en) * 2008-11-05 2010-05-14 Semisouth Laboratories, Inc. Vertical junction field effect transistors having sloped sidewalls and methods of making

Also Published As

Publication number Publication date
WO2011149768A3 (en) 2012-04-05
US8659057B2 (en) 2014-02-25
WO2011149768A2 (en) 2011-12-01
CN103038886A (zh) 2013-04-10
US20110291107A1 (en) 2011-12-01
TW201208076A (en) 2012-02-16
EP2577735A2 (en) 2013-04-10
EP2577735A4 (en) 2014-07-02
US20130011979A1 (en) 2013-01-10

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