IT1138998B - Transistor a induzione statica con strutture di porta perfezionate - Google Patents
Transistor a induzione statica con strutture di porta perfezionateInfo
- Publication number
- IT1138998B IT1138998B IT20238/81A IT2023881A IT1138998B IT 1138998 B IT1138998 B IT 1138998B IT 20238/81 A IT20238/81 A IT 20238/81A IT 2023881 A IT2023881 A IT 2023881A IT 1138998 B IT1138998 B IT 1138998B
- Authority
- IT
- Italy
- Prior art keywords
- static induction
- induction transistor
- door structures
- perfected door
- perfected
- Prior art date
Links
- 230000006698 induction Effects 0.000 title 1
- 230000003068 static effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13089680A | 1980-03-17 | 1980-03-17 |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8120238A0 IT8120238A0 (it) | 1981-03-10 |
IT1138998B true IT1138998B (it) | 1986-09-17 |
Family
ID=22446867
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT20238/81A IT1138998B (it) | 1980-03-17 | 1981-03-10 | Transistor a induzione statica con strutture di porta perfezionate |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS56146282A (it) |
CA (1) | CA1149083A (it) |
DE (1) | DE3110123A1 (it) |
GB (1) | GB2071912A (it) |
IT (1) | IT1138998B (it) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3230945A1 (de) * | 1982-08-20 | 1984-02-23 | Telefunken electronic GmbH, 7100 Heilbronn | Verfahren zum herstellen eines feldeffekttransistors |
FR2569056B1 (fr) * | 1984-08-08 | 1989-03-10 | Japan Res Dev Corp | Transistor a induction statique du type a injection par effet tunnel et circuit integre comprenant un tel transistor |
CH670333A5 (it) * | 1986-04-30 | 1989-05-31 | Bbc Brown Boveri & Cie | |
CH676402A5 (en) * | 1988-11-29 | 1991-01-15 | Asea Brown Boveri | Solid state pinch diode - has three zone structure with channel form and schottky electrode regions |
US5705830A (en) * | 1996-09-05 | 1998-01-06 | Northrop Grumman Corporation | Static induction transistors |
EP2577735A4 (en) * | 2010-05-25 | 2014-07-02 | Power Integrations Inc | SELF-ALIGNED SEMICONDUCTOR SEMICONDUCTOR DEVICES WITH REDUCED GRID-SOURCE LEAKAGE UNDER REVERSE POLARIZATION, AND METHODS OF MANUFACTURE |
-
1981
- 1981-03-10 IT IT20238/81A patent/IT1138998B/it active
- 1981-03-16 DE DE19813110123 patent/DE3110123A1/de not_active Withdrawn
- 1981-03-16 GB GB8108222A patent/GB2071912A/en not_active Withdrawn
- 1981-03-16 JP JP3669381A patent/JPS56146282A/ja active Pending
- 1981-03-16 CA CA000373040A patent/CA1149083A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
IT8120238A0 (it) | 1981-03-10 |
JPS56146282A (en) | 1981-11-13 |
CA1149083A (en) | 1983-06-28 |
GB2071912A (en) | 1981-09-23 |
DE3110123A1 (de) | 1982-02-18 |
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