JPS56146282A - Static induction transistor with improved gate structure - Google Patents

Static induction transistor with improved gate structure

Info

Publication number
JPS56146282A
JPS56146282A JP3669381A JP3669381A JPS56146282A JP S56146282 A JPS56146282 A JP S56146282A JP 3669381 A JP3669381 A JP 3669381A JP 3669381 A JP3669381 A JP 3669381A JP S56146282 A JPS56146282 A JP S56146282A
Authority
JP
Japan
Prior art keywords
gate structure
static induction
induction transistor
improved gate
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3669381A
Other languages
Japanese (ja)
Inventor
Ai Koogan Adorian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Verizon Laboratories Inc
Original Assignee
GTE Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GTE Laboratories Inc filed Critical GTE Laboratories Inc
Publication of JPS56146282A publication Critical patent/JPS56146282A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP3669381A 1980-03-17 1981-03-16 Static induction transistor with improved gate structure Pending JPS56146282A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13089680A 1980-03-17 1980-03-17

Publications (1)

Publication Number Publication Date
JPS56146282A true JPS56146282A (en) 1981-11-13

Family

ID=22446867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3669381A Pending JPS56146282A (en) 1980-03-17 1981-03-16 Static induction transistor with improved gate structure

Country Status (5)

Country Link
JP (1) JPS56146282A (en)
CA (1) CA1149083A (en)
DE (1) DE3110123A1 (en)
GB (1) GB2071912A (en)
IT (1) IT1138998B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3230945A1 (en) * 1982-08-20 1984-02-23 Telefunken electronic GmbH, 7100 Heilbronn METHOD FOR PRODUCING A FIELD EFFECT TRANSISTOR
GB2163002B (en) * 1984-08-08 1989-01-05 Japan Res Dev Corp Tunnel injection static induction transistor and its integrated circuit
CH670333A5 (en) * 1986-04-30 1989-05-31 Bbc Brown Boveri & Cie
CH676402A5 (en) * 1988-11-29 1991-01-15 Asea Brown Boveri Solid state pinch diode - has three zone structure with channel form and schottky electrode regions
US5705830A (en) * 1996-09-05 1998-01-06 Northrop Grumman Corporation Static induction transistors
US8659057B2 (en) * 2010-05-25 2014-02-25 Power Integrations, Inc. Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making

Also Published As

Publication number Publication date
IT8120238A0 (en) 1981-03-10
GB2071912A (en) 1981-09-23
DE3110123A1 (en) 1982-02-18
IT1138998B (en) 1986-09-17
CA1149083A (en) 1983-06-28

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