GB2069754B - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
GB2069754B
GB2069754B GB8004999A GB8004999A GB2069754B GB 2069754 B GB2069754 B GB 2069754B GB 8004999 A GB8004999 A GB 8004999A GB 8004999 A GB8004999 A GB 8004999A GB 2069754 B GB2069754 B GB 2069754B
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8004999A
Other versions
GB2069754A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ITT Industries Ltd
Original Assignee
ITT Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ITT Industries Ltd filed Critical ITT Industries Ltd
Priority to GB8004999A priority Critical patent/GB2069754B/en
Publication of GB2069754A publication Critical patent/GB2069754A/en
Application granted granted Critical
Publication of GB2069754B publication Critical patent/GB2069754B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/432—Heterojunction gate for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
GB8004999A 1980-02-14 1980-02-14 Field effect transistor Expired GB2069754B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB8004999A GB2069754B (en) 1980-02-14 1980-02-14 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8004999A GB2069754B (en) 1980-02-14 1980-02-14 Field effect transistor

Publications (2)

Publication Number Publication Date
GB2069754A GB2069754A (en) 1981-08-26
GB2069754B true GB2069754B (en) 1984-01-04

Family

ID=10511351

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8004999A Expired GB2069754B (en) 1980-02-14 1980-02-14 Field effect transistor

Country Status (1)

Country Link
GB (1) GB2069754B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4712122A (en) * 1984-07-26 1987-12-08 Research Development Corp. Heterojunction gate ballistic JFET with channel thinner than Debye length
GB2163002B (en) * 1984-08-08 1989-01-05 Japan Res Dev Corp Tunnel injection static induction transistor and its integrated circuit

Also Published As

Publication number Publication date
GB2069754A (en) 1981-08-26

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee