IT8120238A0 - STATIC INDUCTION TRANSISTOR WITH IMPROVED GATE STRUCTURES. - Google Patents

STATIC INDUCTION TRANSISTOR WITH IMPROVED GATE STRUCTURES.

Info

Publication number
IT8120238A0
IT8120238A0 IT8120238A IT2023881A IT8120238A0 IT 8120238 A0 IT8120238 A0 IT 8120238A0 IT 8120238 A IT8120238 A IT 8120238A IT 2023881 A IT2023881 A IT 2023881A IT 8120238 A0 IT8120238 A0 IT 8120238A0
Authority
IT
Italy
Prior art keywords
gate structures
static induction
induction transistor
improved gate
improved
Prior art date
Application number
IT8120238A
Other languages
Italian (it)
Other versions
IT1138998B (en
Inventor
Adrian I Cogan
Original Assignee
Gte Laboratories Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gte Laboratories Inc filed Critical Gte Laboratories Inc
Publication of IT8120238A0 publication Critical patent/IT8120238A0/en
Application granted granted Critical
Publication of IT1138998B publication Critical patent/IT1138998B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
IT20238/81A 1980-03-17 1981-03-10 STATIC INDUCTION TRANSISTOR WITH PERFECTED DOOR STRUCTURES IT1138998B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13089680A 1980-03-17 1980-03-17

Publications (2)

Publication Number Publication Date
IT8120238A0 true IT8120238A0 (en) 1981-03-10
IT1138998B IT1138998B (en) 1986-09-17

Family

ID=22446867

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20238/81A IT1138998B (en) 1980-03-17 1981-03-10 STATIC INDUCTION TRANSISTOR WITH PERFECTED DOOR STRUCTURES

Country Status (5)

Country Link
JP (1) JPS56146282A (en)
CA (1) CA1149083A (en)
DE (1) DE3110123A1 (en)
GB (1) GB2071912A (en)
IT (1) IT1138998B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3230945A1 (en) * 1982-08-20 1984-02-23 Telefunken electronic GmbH, 7100 Heilbronn METHOD FOR PRODUCING A FIELD EFFECT TRANSISTOR
FR2569056B1 (en) * 1984-08-08 1989-03-10 Japan Res Dev Corp TUNNEL INJECTION TYPE STATIC INDUCTION TRANSISTOR AND INTEGRATED CIRCUIT COMPRISING SUCH A TRANSISTOR
CH670333A5 (en) * 1986-04-30 1989-05-31 Bbc Brown Boveri & Cie
CH676402A5 (en) * 1988-11-29 1991-01-15 Asea Brown Boveri Solid state pinch diode - has three zone structure with channel form and schottky electrode regions
US5705830A (en) * 1996-09-05 1998-01-06 Northrop Grumman Corporation Static induction transistors
EP2577735A4 (en) * 2010-05-25 2014-07-02 Power Integrations Inc Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making

Also Published As

Publication number Publication date
JPS56146282A (en) 1981-11-13
IT1138998B (en) 1986-09-17
CA1149083A (en) 1983-06-28
GB2071912A (en) 1981-09-23
DE3110123A1 (en) 1982-02-18

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