TW201208076A - Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making - Google Patents

Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making Download PDF

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Publication number
TW201208076A
TW201208076A TW100118051A TW100118051A TW201208076A TW 201208076 A TW201208076 A TW 201208076A TW 100118051 A TW100118051 A TW 100118051A TW 100118051 A TW100118051 A TW 100118051A TW 201208076 A TW201208076 A TW 201208076A
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TW
Taiwan
Prior art keywords
layer
source
range
semiconductor device
convex
Prior art date
Application number
TW100118051A
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English (en)
Chinese (zh)
Inventor
Andrew Ritenour
David C Sheridan
Original Assignee
Semisouth Lab Inc
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Filing date
Publication date
Application filed by Semisouth Lab Inc filed Critical Semisouth Lab Inc
Publication of TW201208076A publication Critical patent/TW201208076A/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/051—Manufacture or treatment of FETs having PN junction gates
    • H10D30/0512—Manufacture or treatment of FETs having PN junction gates of FETs having PN homojunction gates
    • H10D30/0515—Manufacture or treatment of FETs having PN junction gates of FETs having PN homojunction gates of vertical FETs having PN homojunction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Junction Field-Effect Transistors (AREA)
TW100118051A 2010-05-25 2011-05-24 Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making TW201208076A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US34792810P 2010-05-25 2010-05-25

Publications (1)

Publication Number Publication Date
TW201208076A true TW201208076A (en) 2012-02-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW100118051A TW201208076A (en) 2010-05-25 2011-05-24 Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making

Country Status (6)

Country Link
US (2) US8659057B2 (enExample)
EP (1) EP2577735A4 (enExample)
JP (1) JP2013530527A (enExample)
CN (1) CN103038886A (enExample)
TW (1) TW201208076A (enExample)
WO (1) WO2011149768A2 (enExample)

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US9935102B1 (en) 2016-10-05 2018-04-03 International Business Machines Corporation Method and structure for improving vertical transistor
US11245027B2 (en) * 2020-03-10 2022-02-08 International Business Machines Corporation Bottom source/drain etch with fin-cut-last-VTFET
US20230327026A1 (en) * 2022-03-25 2023-10-12 Wolfspeed, Inc. Power semiconductor device with shallow conduction region
DE102023208539A1 (de) 2023-08-10 2025-02-13 Infineon Technologies Austria Ag Transistorvorrichtung und verfahren

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Also Published As

Publication number Publication date
WO2011149768A3 (en) 2012-04-05
US8659057B2 (en) 2014-02-25
WO2011149768A2 (en) 2011-12-01
JP2013530527A (ja) 2013-07-25
CN103038886A (zh) 2013-04-10
US20110291107A1 (en) 2011-12-01
EP2577735A2 (en) 2013-04-10
EP2577735A4 (en) 2014-07-02
US20130011979A1 (en) 2013-01-10

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