JP2006516815A5 - - Google Patents

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Publication number
JP2006516815A5
JP2006516815A5 JP2006500992A JP2006500992A JP2006516815A5 JP 2006516815 A5 JP2006516815 A5 JP 2006516815A5 JP 2006500992 A JP2006500992 A JP 2006500992A JP 2006500992 A JP2006500992 A JP 2006500992A JP 2006516815 A5 JP2006516815 A5 JP 2006516815A5
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JP
Japan
Prior art keywords
surface charge
silicon carbide
floating guard
termination structure
charge compensation
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JP2006500992A
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English (en)
Japanese (ja)
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JP2006516815A (ja
JP5122810B2 (ja
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Priority claimed from US10/731,860 external-priority patent/US7026650B2/en
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Publication of JP2006516815A publication Critical patent/JP2006516815A/ja
Publication of JP2006516815A5 publication Critical patent/JP2006516815A5/ja
Application granted granted Critical
Publication of JP5122810B2 publication Critical patent/JP5122810B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2006500992A 2003-01-15 2004-01-07 炭化ケイ素半導体デバイスのためのエッジ終端構造及びその製造方法 Expired - Lifetime JP5122810B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US44019303P 2003-01-15 2003-01-15
US60/440,193 2003-01-15
US10/731,860 US7026650B2 (en) 2003-01-15 2003-12-09 Multiple floating guard ring edge termination for silicon carbide devices
US10/731,860 2003-12-09
PCT/US2004/001183 WO2004066392A1 (en) 2003-01-15 2004-01-07 Edge ring termination for silicon carbide devices

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2011162517A Division JP5695996B2 (ja) 2003-01-15 2011-07-25 炭化ケイ素半導体デバイスのためのエッジ終端構造の製造方法
JP2011276103A Division JP5670308B2 (ja) 2003-01-15 2011-12-16 炭化ケイ素半導体デバイスのためのエッジ終端構造及びその製造方法

Publications (3)

Publication Number Publication Date
JP2006516815A JP2006516815A (ja) 2006-07-06
JP2006516815A5 true JP2006516815A5 (enExample) 2007-03-22
JP5122810B2 JP5122810B2 (ja) 2013-01-16

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ID=32718154

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JP2006500992A Expired - Lifetime JP5122810B2 (ja) 2003-01-15 2004-01-07 炭化ケイ素半導体デバイスのためのエッジ終端構造及びその製造方法
JP2011162517A Expired - Lifetime JP5695996B2 (ja) 2003-01-15 2011-07-25 炭化ケイ素半導体デバイスのためのエッジ終端構造の製造方法
JP2011276103A Expired - Lifetime JP5670308B2 (ja) 2003-01-15 2011-12-16 炭化ケイ素半導体デバイスのためのエッジ終端構造及びその製造方法

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JP2011162517A Expired - Lifetime JP5695996B2 (ja) 2003-01-15 2011-07-25 炭化ケイ素半導体デバイスのためのエッジ終端構造の製造方法
JP2011276103A Expired - Lifetime JP5670308B2 (ja) 2003-01-15 2011-12-16 炭化ケイ素半導体デバイスのためのエッジ終端構造及びその製造方法

Country Status (7)

Country Link
US (4) US7026650B2 (enExample)
EP (2) EP2261987B1 (enExample)
JP (3) JP5122810B2 (enExample)
KR (1) KR101036380B1 (enExample)
CA (1) CA2512580A1 (enExample)
TW (1) TWI336522B (enExample)
WO (1) WO2004066392A1 (enExample)

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JP6242633B2 (ja) 2013-09-03 2017-12-06 株式会社東芝 半導体装置
CN105493293B (zh) 2013-09-09 2018-08-24 株式会社日立制作所 半导体装置及其制造方法
WO2015040675A1 (ja) * 2013-09-17 2015-03-26 株式会社日立製作所 半導体装置、電力変換装置、鉄道車両、および半導体装置の製造方法
JP2015126193A (ja) * 2013-12-27 2015-07-06 株式会社豊田中央研究所 縦型半導体装置
CN103824760B (zh) * 2014-01-30 2017-04-26 株洲南车时代电气股份有限公司 一种碳化硅功率器件结终端的制造方法
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KR102550521B1 (ko) 2016-10-21 2023-06-30 한국전기연구원 실리콘 카바이드 반도체 소자의 제조방법
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US20210273090A1 (en) * 2020-03-02 2021-09-02 Cree, Inc. Semiconductor die with improved edge termination
TWI743818B (zh) * 2020-06-02 2021-10-21 台灣半導體股份有限公司 具有多保護環結構之蕭特基二極體
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