JP5122810B2 - 炭化ケイ素半導体デバイスのためのエッジ終端構造及びその製造方法 - Google Patents

炭化ケイ素半導体デバイスのためのエッジ終端構造及びその製造方法 Download PDF

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JP5122810B2
JP5122810B2 JP2006500992A JP2006500992A JP5122810B2 JP 5122810 B2 JP5122810 B2 JP 5122810B2 JP 2006500992 A JP2006500992 A JP 2006500992A JP 2006500992 A JP2006500992 A JP 2006500992A JP 5122810 B2 JP5122810 B2 JP 5122810B2
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silicon carbide
termination structure
surface charge
charge compensation
edge termination
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JP2006516815A5 (enExample
JP2006516815A (ja
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セイ−ヒュン リュウ
ケー．アガルワル アナント
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Wolfspeed Inc
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Cree Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions

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  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
JP2006500992A 2003-01-15 2004-01-07 炭化ケイ素半導体デバイスのためのエッジ終端構造及びその製造方法 Expired - Lifetime JP5122810B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US44019303P 2003-01-15 2003-01-15
US60/440,193 2003-01-15
US10/731,860 2003-12-09
US10/731,860 US7026650B2 (en) 2003-01-15 2003-12-09 Multiple floating guard ring edge termination for silicon carbide devices
PCT/US2004/001183 WO2004066392A1 (en) 2003-01-15 2004-01-07 Edge ring termination for silicon carbide devices

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JP2011162517A Division JP5695996B2 (ja) 2003-01-15 2011-07-25 炭化ケイ素半導体デバイスのためのエッジ終端構造の製造方法
JP2011276103A Division JP5670308B2 (ja) 2003-01-15 2011-12-16 炭化ケイ素半導体デバイスのためのエッジ終端構造及びその製造方法

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JP2006516815A5 JP2006516815A5 (enExample) 2007-03-22
JP5122810B2 true JP5122810B2 (ja) 2013-01-16

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JP2011162517A Expired - Lifetime JP5695996B2 (ja) 2003-01-15 2011-07-25 炭化ケイ素半導体デバイスのためのエッジ終端構造の製造方法
JP2011276103A Expired - Lifetime JP5670308B2 (ja) 2003-01-15 2011-12-16 炭化ケイ素半導体デバイスのためのエッジ終端構造及びその製造方法

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JP2011276103A Expired - Lifetime JP5670308B2 (ja) 2003-01-15 2011-12-16 炭化ケイ素半導体デバイスのためのエッジ終端構造及びその製造方法

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US (4) US7026650B2 (enExample)
EP (2) EP2261987B1 (enExample)
JP (3) JP5122810B2 (enExample)
KR (1) KR101036380B1 (enExample)
CA (1) CA2512580A1 (enExample)
TW (1) TWI336522B (enExample)
WO (1) WO2004066392A1 (enExample)

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WO2015033463A1 (ja) 2013-09-09 2015-03-12 株式会社日立製作所 半導体装置およびその製造方法、電力変換装置、３相モータシステム、自動車、ならびに鉄道車両
WO2015040675A1 (ja) * 2013-09-17 2015-03-26 株式会社日立製作所 半導体装置、電力変換装置、鉄道車両、および半導体装置の製造方法
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US7842549B2 (en) 2010-11-30
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JP2011243999A (ja) 2011-12-01
CA2512580A1 (en) 2004-08-05
JP5670308B2 (ja) 2015-02-18
KR101036380B1 (ko) 2011-05-23
JP2006516815A (ja) 2006-07-06
US20090035926A1 (en) 2009-02-05
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US8124480B2 (en) 2012-02-28
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EP1584110B1 (en) 2018-02-21
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JP2012084910A (ja) 2012-04-26
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TW200505018A (en) 2005-02-01
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