TWI336522B - Multiple floating guard ring edge termination for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same - Google Patents
Multiple floating guard ring edge termination for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same Download PDFInfo
- Publication number
- TWI336522B TWI336522B TW093100255A TW93100255A TWI336522B TW I336522 B TWI336522 B TW I336522B TW 093100255 A TW093100255 A TW 093100255A TW 93100255 A TW93100255 A TW 93100255A TW I336522 B TWI336522 B TW I336522B
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- Prior art keywords
- surface charge
- layer
- floating
- charge compensation
- guard rings
- Prior art date
Links
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- 229910010271 silicon carbide Inorganic materials 0.000 title description 14
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/60—Schottky-barrier diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
Landscapes
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US44019303P | 2003-01-15 | 2003-01-15 | |
| US10/731,860 US7026650B2 (en) | 2003-01-15 | 2003-12-09 | Multiple floating guard ring edge termination for silicon carbide devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200505018A TW200505018A (en) | 2005-02-01 |
| TWI336522B true TWI336522B (en) | 2011-01-21 |
Family
ID=32718154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093100255A TWI336522B (en) | 2003-01-15 | 2004-01-06 | Multiple floating guard ring edge termination for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same |
Country Status (7)
| Country | Link |
|---|---|
| US (4) | US7026650B2 (enExample) |
| EP (2) | EP2261987B1 (enExample) |
| JP (3) | JP5122810B2 (enExample) |
| KR (1) | KR101036380B1 (enExample) |
| CA (1) | CA2512580A1 (enExample) |
| TW (1) | TWI336522B (enExample) |
| WO (1) | WO2004066392A1 (enExample) |
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-
2003
- 2003-12-09 US US10/731,860 patent/US7026650B2/en not_active Expired - Lifetime
-
2004
- 2004-01-06 TW TW093100255A patent/TWI336522B/zh not_active IP Right Cessation
- 2004-01-07 JP JP2006500992A patent/JP5122810B2/ja not_active Expired - Lifetime
- 2004-01-07 EP EP10179609.2A patent/EP2261987B1/en not_active Expired - Lifetime
- 2004-01-07 CA CA002512580A patent/CA2512580A1/en not_active Abandoned
- 2004-01-07 KR KR1020057012990A patent/KR101036380B1/ko not_active Expired - Lifetime
- 2004-01-07 WO PCT/US2004/001183 patent/WO2004066392A1/en not_active Ceased
- 2004-01-07 EP EP04700653.1A patent/EP1584110B1/en not_active Expired - Lifetime
-
2005
- 2005-11-08 US US11/268,789 patent/US7419877B2/en not_active Expired - Lifetime
-
2008
- 2008-08-21 US US12/195,700 patent/US7842549B2/en not_active Expired - Lifetime
-
2010
- 2010-11-19 US US12/950,410 patent/US8124480B2/en not_active Expired - Fee Related
-
2011
- 2011-07-25 JP JP2011162517A patent/JP5695996B2/ja not_active Expired - Lifetime
- 2011-12-16 JP JP2011276103A patent/JP5670308B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US20060054895A1 (en) | 2006-03-16 |
| EP2261987B1 (en) | 2019-09-18 |
| US7842549B2 (en) | 2010-11-30 |
| US7419877B2 (en) | 2008-09-02 |
| JP2011243999A (ja) | 2011-12-01 |
| CA2512580A1 (en) | 2004-08-05 |
| JP5670308B2 (ja) | 2015-02-18 |
| KR101036380B1 (ko) | 2011-05-23 |
| JP2006516815A (ja) | 2006-07-06 |
| US20090035926A1 (en) | 2009-02-05 |
| EP1584110A1 (en) | 2005-10-12 |
| JP5122810B2 (ja) | 2013-01-16 |
| KR20050109924A (ko) | 2005-11-22 |
| US8124480B2 (en) | 2012-02-28 |
| JP5695996B2 (ja) | 2015-04-08 |
| WO2004066392A1 (en) | 2004-08-05 |
| EP1584110B1 (en) | 2018-02-21 |
| US20110081772A1 (en) | 2011-04-07 |
| US20040135153A1 (en) | 2004-07-15 |
| EP2261987A3 (en) | 2014-01-15 |
| JP2012084910A (ja) | 2012-04-26 |
| US7026650B2 (en) | 2006-04-11 |
| TW200505018A (en) | 2005-02-01 |
| EP2261987A2 (en) | 2010-12-15 |
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