CN103824760B - 一种碳化硅功率器件结终端的制造方法 - Google Patents
一种碳化硅功率器件结终端的制造方法 Download PDFInfo
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- CN103824760B CN103824760B CN201410044255.8A CN201410044255A CN103824760B CN 103824760 B CN103824760 B CN 103824760B CN 201410044255 A CN201410044255 A CN 201410044255A CN 103824760 B CN103824760 B CN 103824760B
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- manufacture method
- power device
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Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 26
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 40
- 230000000670 limiting effect Effects 0.000 claims abstract description 27
- 238000002347 injection Methods 0.000 claims abstract description 17
- 239000007924 injection Substances 0.000 claims abstract description 17
- 150000002500 ions Chemical class 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 238000001312 dry etching Methods 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 abstract description 4
- 238000005468 ion implantation Methods 0.000 abstract 2
- 230000005684 electric field Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
- H01L21/0465—Making n or p doped regions or layers, e.g. using diffusion using ion implantation using masks
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410044255.8A CN103824760B (zh) | 2014-01-30 | 2014-01-30 | 一种碳化硅功率器件结终端的制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410044255.8A CN103824760B (zh) | 2014-01-30 | 2014-01-30 | 一种碳化硅功率器件结终端的制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN103824760A CN103824760A (zh) | 2014-05-28 |
CN103824760B true CN103824760B (zh) | 2017-04-26 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201410044255.8A Active CN103824760B (zh) | 2014-01-30 | 2014-01-30 | 一种碳化硅功率器件结终端的制造方法 |
Country Status (1)
Country | Link |
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CN (1) | CN103824760B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105914133B (zh) * | 2016-05-09 | 2018-11-27 | 中国电子科技集团公司第五十五研究所 | 一种变掺杂结终端制备方法 |
CN107369620B (zh) * | 2016-05-12 | 2020-10-13 | 北大方正集团有限公司 | 结终端扩展结构制备方法及结终端扩展结构、vdmos功率器件 |
CN110534556B (zh) * | 2019-07-23 | 2020-11-17 | 珠海格力电器股份有限公司 | 功率半导体器件、其终端结构、掩膜版和制备方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7026650B2 (en) * | 2003-01-15 | 2006-04-11 | Cree, Inc. | Multiple floating guard ring edge termination for silicon carbide devices |
US9515135B2 (en) * | 2003-01-15 | 2016-12-06 | Cree, Inc. | Edge termination structures for silicon carbide devices |
JP4449814B2 (ja) * | 2005-04-27 | 2010-04-14 | 富士電機システムズ株式会社 | 炭化けい素半導体素子の製造方法 |
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2014
- 2014-01-30 CN CN201410044255.8A patent/CN103824760B/zh active Active
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Address after: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee after: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee before: ZHUZHOU CSR TIMES ELECTRIC Co.,Ltd. |
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Effective date of registration: 20200925 Address after: 412001 Room 309, floor 3, semiconductor third line office building, Tianxin hi tech park, Shifeng District, Zhuzhou City, Hunan Province Patentee after: Zhuzhou CRRC times Semiconductor Co.,Ltd. Address before: The age of 412001 in Hunan Province, Zhuzhou Shifeng District Road No. 169 Patentee before: ZHUZHOU CRRC TIMES ELECTRIC Co.,Ltd. |