JP2011514674A5 - - Google Patents

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Publication number
JP2011514674A5
JP2011514674A5 JP2010548670A JP2010548670A JP2011514674A5 JP 2011514674 A5 JP2011514674 A5 JP 2011514674A5 JP 2010548670 A JP2010548670 A JP 2010548670A JP 2010548670 A JP2010548670 A JP 2010548670A JP 2011514674 A5 JP2011514674 A5 JP 2011514674A5
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JP
Japan
Prior art keywords
doped portion
silicon carbide
guard ring
floating guard
termination structure
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Application number
JP2010548670A
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English (en)
Japanese (ja)
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JP5324603B2 (ja
JP2011514674A (ja
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Priority claimed from US12/037,211 external-priority patent/US9640609B2/en
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Publication of JP2011514674A publication Critical patent/JP2011514674A/ja
Publication of JP2011514674A5 publication Critical patent/JP2011514674A5/ja
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Publication of JP5324603B2 publication Critical patent/JP5324603B2/ja
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JP2010548670A 2008-02-26 2009-02-05 炭化ケイ素デバイス用の２重ガード・リング端部終端、及びそれを組み込む炭化ケイ素デバイスを製造する方法 Active JP5324603B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/037,211 US9640609B2 (en) 2008-02-26 2008-02-26 Double guard ring edge termination for silicon carbide devices
US12/037,211 2008-02-26
PCT/US2009/000734 WO2009108268A1 (en) 2008-02-26 2009-02-05 Double guard ring edge termination for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same

Publications (3)

Publication Number Publication Date
JP2011514674A JP2011514674A (ja) 2011-05-06
JP2011514674A5 true JP2011514674A5 (enExample) 2012-04-12
JP5324603B2 JP5324603B2 (ja) 2013-10-23

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010548670A Active JP5324603B2 (ja) 2008-02-26 2009-02-05 炭化ケイ素デバイス用の２重ガード・リング端部終端、及びそれを組み込む炭化ケイ素デバイスを製造する方法

Country Status (6)

Country Link
US (1) US9640609B2 (enExample)
EP (1) EP2248176B1 (enExample)
JP (1) JP5324603B2 (enExample)
KR (1) KR101595587B1 (enExample)
CN (1) CN101981700B (enExample)
WO (1) WO2009108268A1 (enExample)

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