JP5324603B2 - 炭化ケイ素デバイス用の２重ガード・リング端部終端、及びそれを組み込む炭化ケイ素デバイスを製造する方法 - Google Patents

炭化ケイ素デバイス用の２重ガード・リング端部終端、及びそれを組み込む炭化ケイ素デバイスを製造する方法 Download PDF

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JP5324603B2
JP5324603B2 JP2010548670A JP2010548670A JP5324603B2 JP 5324603 B2 JP5324603 B2 JP 5324603B2 JP 2010548670 A JP2010548670 A JP 2010548670A JP 2010548670 A JP2010548670 A JP 2010548670A JP 5324603 B2 JP5324603 B2 JP 5324603B2
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guard ring
silicon carbide
doped portion
floating guard
end termination
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JP2011514674A (ja
JP2011514674A5 (enExample
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チャン、チンチュン
ジョナス、シャーロット
アガルワル、アナント、ケイ．
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Wolfspeed Inc
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Cree Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes

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JP2010548670A 2008-02-26 2009-02-05 炭化ケイ素デバイス用の２重ガード・リング端部終端、及びそれを組み込む炭化ケイ素デバイスを製造する方法 Active JP5324603B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/037,211 2008-02-26
US12/037,211 US9640609B2 (en) 2008-02-26 2008-02-26 Double guard ring edge termination for silicon carbide devices
PCT/US2009/000734 WO2009108268A1 (en) 2008-02-26 2009-02-05 Double guard ring edge termination for silicon carbide devices and methods of fabricating silicon carbide devices incorporating same

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JP2011514674A JP2011514674A (ja) 2011-05-06
JP2011514674A5 JP2011514674A5 (enExample) 2012-04-12
JP5324603B2 true JP5324603B2 (ja) 2013-10-23

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US (1) US9640609B2 (enExample)
EP (1) EP2248176B1 (enExample)
JP (1) JP5324603B2 (enExample)
KR (1) KR101595587B1 (enExample)
CN (1) CN101981700B (enExample)
WO (1) WO2009108268A1 (enExample)

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US10204980B2 (en) 2016-07-14 2019-02-12 Toyota Jidosha Kabushiki Kaisha Semiconductor device and manufacturing method of the same

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KR101595587B1 (ko) 2016-02-18
KR20100128303A (ko) 2010-12-07
CN101981700B (zh) 2014-05-14
US20090212301A1 (en) 2009-08-27
JP2011514674A (ja) 2011-05-06
CN101981700A (zh) 2011-02-23
EP2248176A1 (en) 2010-11-10
US9640609B2 (en) 2017-05-02
EP2248176B1 (en) 2014-04-23
WO2009108268A1 (en) 2009-09-03

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