JP2006049826A5 - - Google Patents

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Publication number
JP2006049826A5
JP2006049826A5 JP2005144867A JP2005144867A JP2006049826A5 JP 2006049826 A5 JP2006049826 A5 JP 2006049826A5 JP 2005144867 A JP2005144867 A JP 2005144867A JP 2005144867 A JP2005144867 A JP 2005144867A JP 2006049826 A5 JP2006049826 A5 JP 2006049826A5
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JP
Japan
Prior art keywords
region
trench
semiconductor device
semiconductor
concave
Prior art date
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Application number
JP2005144867A
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English (en)
Japanese (ja)
Other versions
JP5110776B2 (ja
JP2006049826A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005144867A priority Critical patent/JP5110776B2/ja
Priority claimed from JP2005144867A external-priority patent/JP5110776B2/ja
Priority to US11/155,960 priority patent/US7242058B2/en
Priority to TW094120810A priority patent/TWI380444B/zh
Priority to KR1020050057911A priority patent/KR101152451B1/ko
Publication of JP2006049826A publication Critical patent/JP2006049826A/ja
Publication of JP2006049826A5 publication Critical patent/JP2006049826A5/ja
Application granted granted Critical
Publication of JP5110776B2 publication Critical patent/JP5110776B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005144867A 2004-07-01 2005-05-18 半導体装置の製造方法 Expired - Fee Related JP5110776B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005144867A JP5110776B2 (ja) 2004-07-01 2005-05-18 半導体装置の製造方法
US11/155,960 US7242058B2 (en) 2004-07-01 2005-06-17 Lateral semiconductor device using trench structure and method of manufacturing the same
TW094120810A TWI380444B (en) 2004-07-01 2005-06-22 Lateral semiconductor device using trench structure and method of manufacturing the same
KR1020050057911A KR101152451B1 (ko) 2004-07-01 2005-06-30 트렌치 구조를 이용한 횡형 반도체 장치 및 그 제조 방법

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004195887 2004-07-01
JP2004195887 2004-07-01
JP2005144867A JP5110776B2 (ja) 2004-07-01 2005-05-18 半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012193987A Division JP5486654B2 (ja) 2004-07-01 2012-09-04 半導体装置

Publications (3)

Publication Number Publication Date
JP2006049826A JP2006049826A (ja) 2006-02-16
JP2006049826A5 true JP2006049826A5 (enExample) 2008-03-27
JP5110776B2 JP5110776B2 (ja) 2012-12-26

Family

ID=35512992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005144867A Expired - Fee Related JP5110776B2 (ja) 2004-07-01 2005-05-18 半導体装置の製造方法

Country Status (4)

Country Link
US (1) US7242058B2 (enExample)
JP (1) JP5110776B2 (enExample)
KR (1) KR101152451B1 (enExample)
TW (1) TWI380444B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060071270A1 (en) * 2004-09-29 2006-04-06 Shibib Muhammed A Metal-oxide-semiconductor device having trenched diffusion region and method of forming same
EP1892750B1 (en) * 2006-08-23 2012-11-28 Imec Method for doping a fin-based semiconductor device
JP2008053468A (ja) * 2006-08-24 2008-03-06 Seiko Instruments Inc トレンチ構造を利用した横型高駆動能力半導体装置
JP2008192985A (ja) * 2007-02-07 2008-08-21 Seiko Instruments Inc 半導体装置、及び半導体装置の製造方法
JP5165954B2 (ja) * 2007-07-27 2013-03-21 セイコーインスツル株式会社 半導体装置
JP5314949B2 (ja) * 2007-07-27 2013-10-16 セイコーインスツル株式会社 半導体装置の製造方法
US8236648B2 (en) * 2007-07-27 2012-08-07 Seiko Instruments Inc. Trench MOS transistor and method of manufacturing the same
JP5159365B2 (ja) * 2008-02-26 2013-03-06 セイコーインスツル株式会社 半導体装置およびその製造方法
JP5341639B2 (ja) 2009-06-26 2013-11-13 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
KR102075173B1 (ko) 2011-01-18 2020-02-07 센주 세이야꾸 가부시키가이샤 보존 효력을 갖는 브롬페낙 수성 액제 조성물
JP5486673B2 (ja) * 2012-12-26 2014-05-07 セイコーインスツル株式会社 半導体装置
US9997599B2 (en) * 2013-10-07 2018-06-12 Purdue Research Foundation MOS-based power semiconductor device having increased current carrying area and method of fabricating same
DE102014104589B4 (de) 2014-04-01 2017-01-26 Infineon Technologies Ag Halbleitervorrichtung und integrierte Schaltung
US9601578B2 (en) * 2014-10-10 2017-03-21 Globalfoundries Inc. Non-planar vertical dual source drift metal-oxide semiconductor (VDSMOS)
JP7579673B2 (ja) * 2020-11-02 2024-11-08 日産自動車株式会社 半導体装置およびその製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4569701A (en) * 1984-04-05 1986-02-11 At&T Bell Laboratories Technique for doping from a polysilicon transfer layer
JPH02134871A (ja) * 1988-11-15 1990-05-23 Mitsubishi Electric Corp 半導体装置
JP2994670B2 (ja) * 1989-12-02 1999-12-27 忠弘 大見 半導体装置及びその製造方法
JPH04276662A (ja) * 1991-03-05 1992-10-01 Kawasaki Steel Corp 半導体装置の製造方法
JP3017838B2 (ja) * 1991-06-06 2000-03-13 株式会社東芝 半導体装置およびその製造方法
JPH05110083A (ja) * 1991-10-15 1993-04-30 Oki Electric Ind Co Ltd 電界効果トランジスタ
JP3311070B2 (ja) * 1993-03-15 2002-08-05 株式会社東芝 半導体装置
JPH06302818A (ja) * 1993-04-16 1994-10-28 Kawasaki Steel Corp 半導体装置
JPH08264764A (ja) * 1995-03-22 1996-10-11 Toshiba Corp 半導体装置
JPH0923011A (ja) * 1995-07-05 1997-01-21 Hitachi Ltd 半導体装置及びその製造方法
JP3405681B2 (ja) * 1997-07-31 2003-05-12 株式会社東芝 半導体装置
DE19908809B4 (de) * 1999-03-01 2007-02-01 Infineon Technologies Ag Verfahren zur Herstellung einer MOS-Transistorstruktur mit einstellbarer Schwellspannung
US6461918B1 (en) * 1999-12-20 2002-10-08 Fairchild Semiconductor Corporation Power MOS device with improved gate charge performance
JP2002026311A (ja) * 2000-07-04 2002-01-25 Miyazaki Oki Electric Co Ltd Ｓｏｉ型ｍｏｓ素子およびその製造方法
US6661050B2 (en) * 2002-03-20 2003-12-09 Taiwan Semiconductor Manufacturing Co., Ltd Memory cell structure with trench capacitor and method for fabrication thereof
JP3927111B2 (ja) * 2002-10-31 2007-06-06 株式会社東芝 電力用半導体装置
US6861701B2 (en) * 2003-03-05 2005-03-01 Advanced Analogic Technologies, Inc. Trench power MOSFET with planarized gate bus
JP4829473B2 (ja) * 2004-01-21 2011-12-07 オンセミコンダクター・トレーディング・リミテッド 絶縁ゲート型半導体装置およびその製造方法

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