WO2012034372A8 - Trench vertical double diffused metal oxide semiconductor transistor - Google Patents

Trench vertical double diffused metal oxide semiconductor transistor Download PDF

Info

Publication number
WO2012034372A8
WO2012034372A8 PCT/CN2011/070950 CN2011070950W WO2012034372A8 WO 2012034372 A8 WO2012034372 A8 WO 2012034372A8 CN 2011070950 W CN2011070950 W CN 2011070950W WO 2012034372 A8 WO2012034372 A8 WO 2012034372A8
Authority
WO
WIPO (PCT)
Prior art keywords
well region
multitude
trench
metal oxide
oxide semiconductor
Prior art date
Application number
PCT/CN2011/070950
Other languages
French (fr)
Other versions
WO2012034372A1 (en
Inventor
Genyi Wang
Tzong Shiann Wo
Original Assignee
Csmc Technologies Fab1 Co., Ltd.
Csmc Technologies Fab2 Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Csmc Technologies Fab1 Co., Ltd., Csmc Technologies Fab2 Co., Ltd. filed Critical Csmc Technologies Fab1 Co., Ltd.
Priority to JP2013527448A priority Critical patent/JP2013539906A/en
Publication of WO2012034372A1 publication Critical patent/WO2012034372A1/en
Publication of WO2012034372A8 publication Critical patent/WO2012034372A8/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66727—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the source electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A trench vertical double diffused metal oxide semiconductor transistor includes, in part, a semiconductor substrate, an epitaxial layer formed above the substrate, a well region formed in the epitaxial layer, a multitude of trenches formed in the well region with each trench having formed therein a gate oxide layer and a polysilicon gate, a multitude of contact holes formed in the well region wherein each contact hole is positioned between a pair of adjacent trenches and has a metal disposed therein, a multitude of body contact regions positioned below the contact holes, and a multitude of source regions formed in the well region. Each source region is positioned between a trench and a contact hole. The substrate, the epitaxial layer, and the source regions are of the first conductivity type. The well region and the body contact regions are of the second conductivity type opposite the first conductivity type.
PCT/CN2011/070950 2010-09-14 2011-02-12 Trench vertical double diffused metal oxide semiconductor transistor WO2012034372A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013527448A JP2013539906A (en) 2010-09-14 2011-02-12 Trench vertical double diffused metal oxide semiconductor transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN2010102800573A CN102403351A (en) 2010-09-14 2010-09-14 Trench vertical double-diffused transistor
CN201010280057.3 2010-09-14

Publications (2)

Publication Number Publication Date
WO2012034372A1 WO2012034372A1 (en) 2012-03-22
WO2012034372A8 true WO2012034372A8 (en) 2012-07-19

Family

ID=45830961

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2011/070950 WO2012034372A1 (en) 2010-09-14 2011-02-12 Trench vertical double diffused metal oxide semiconductor transistor

Country Status (3)

Country Link
JP (1) JP2013539906A (en)
CN (1) CN102403351A (en)
WO (1) WO2012034372A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6577558B2 (en) * 2012-08-21 2019-09-18 ローム株式会社 Semiconductor device
CN111933690B (en) * 2020-09-24 2021-01-05 江苏宏微科技股份有限公司 Power device and manufacturing method thereof
CN113224164B (en) * 2021-04-21 2022-03-29 电子科技大学 Super junction MOS device
CN113937746A (en) * 2021-10-22 2022-01-14 深圳市良标科技有限公司 A prevent flowing backward circuit for power management
CN113990932A (en) * 2021-10-28 2022-01-28 电子科技大学 Semiconductor longitudinal device and preparation method
CN116995096A (en) * 2023-03-14 2023-11-03 安徽芯塔电子科技有限公司 Planar MOSFET device and preparation method thereof

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5674766A (en) * 1994-12-30 1997-10-07 Siliconix Incorporated Method of making a trench MOSFET with multi-resistivity drain to provide low on-resistance by varying dopant concentration in epitaxial layer
JP3748337B2 (en) * 1999-02-04 2006-02-22 株式会社東芝 Semiconductor device
JP2003318395A (en) * 2002-04-19 2003-11-07 Hitachi Ltd Manufacturing method for semiconductor device
JP4004843B2 (en) * 2002-04-24 2007-11-07 Ｎｅｃエレクトロニクス株式会社 Method for manufacturing vertical MOSFET
JP2004055812A (en) * 2002-07-19 2004-02-19 Renesas Technology Corp Semiconductor device
JP4632797B2 (en) * 2005-01-21 2011-02-16 新電元工業株式会社 Semiconductor device and method for manufacturing semiconductor device
US7939886B2 (en) * 2005-11-22 2011-05-10 Shindengen Electric Manufacturing Co., Ltd. Trench gate power semiconductor device
US20090315104A1 (en) * 2008-06-20 2009-12-24 Force Mos Technology Co. Ltd. Trench MOSFET with shallow trench structures
US8193579B2 (en) * 2008-07-29 2012-06-05 Rohm Co., Ltd. Trench type semiconductor device and fabrication method for the same
US8022471B2 (en) * 2008-12-31 2011-09-20 Force-Mos Technology Corp. Trench metal oxide semiconductor field effect transistor (MOSFET) with low gate to drain coupled charges (Qgd) structures
JP2010186760A (en) * 2009-02-10 2010-08-26 Panasonic Corp Semiconductor device and method of manufacturing the same
US20100200912A1 (en) * 2009-02-11 2010-08-12 Force Mos Technology Co. Ltd. Mosfets with terrace irench gate and improved source-body contact
JP5775268B2 (en) * 2010-06-09 2015-09-09 ローム株式会社 Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
JP2013539906A (en) 2013-10-28
CN102403351A (en) 2012-04-04
WO2012034372A1 (en) 2012-03-22

Similar Documents

Publication Publication Date Title
EP2613357A3 (en) Field-effect transistor and manufacturing method thereof
WO2009141678A3 (en) Mos device with integrated schottky diode in active region contact trench
TW200620630A (en) Enhanced resurf HV PMOS device with stacked hetero-doping rim and gradual drift region
TW200731530A (en) Semiconductor devices and methods for fabricating the same
WO2012034372A8 (en) Trench vertical double diffused metal oxide semiconductor transistor
TW200644155A (en) Semiconductor device having trench structures and method
WO2007110832A3 (en) Trench-gate semiconductor device and method of fabrication thereof
EP2755237A3 (en) Trench MOS gate semiconductor device and method of fabricating the same
TW200802691A (en) Semiconductor device having trench charge compensation regions and method
JP2010147477A5 (en)
TW200635037A (en) Semiconductor device with increased channel length and method for fabricating the same
TW200644243A (en) Trenched-gate field effect transistors and methods of forming the same
WO2012054686A3 (en) Trench dmos device with improved termination structure for high voltage applications
TW200707560A (en) Semiconductor structure with improved on resistance and breakdown voltage
TW200731415A (en) Methods for forming a semiconductor device
TW200636992A (en) Semiconductor device edge termination structure and method
EP2615643A3 (en) Field-effect transistor and manufacturing method thereof
WO2009063588A1 (en) Semiconductor device and method for manufacturing the same
TW200711054A (en) A method of manufacturing a transistor and a method of forming a memory device
EP2089907A1 (en) Semiconductor device and method for manufacturing the same
TW200709303A (en) Semiconductor structure with improved on resistance and breakdown voltage performance
JP2013508981A5 (en)
TW200614512A (en) Semiconductor device and method for manufacturing the same
TW200620668A (en) Vertical trench gate transistor semiconductor device and method for fabricating the same
WO2007072405A3 (en) Semiconductor device with recessed field plate and method of manufacturing the same

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11824443

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase in:

Ref document number: 2013527448

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase in:

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11824443

Country of ref document: EP

Kind code of ref document: A1