KR101152451B1 - 트렌치 구조를 이용한 횡형 반도체 장치 및 그 제조 방법 - Google Patents

트렌치 구조를 이용한 횡형 반도체 장치 및 그 제조 방법 Download PDF

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Publication number
KR101152451B1
KR101152451B1 KR1020050057911A KR20050057911A KR101152451B1 KR 101152451 B1 KR101152451 B1 KR 101152451B1 KR 1020050057911 A KR1020050057911 A KR 1020050057911A KR 20050057911 A KR20050057911 A KR 20050057911A KR 101152451 B1 KR101152451 B1 KR 101152451B1
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South Korea
Prior art keywords
region
trench
semiconductor device
concave
well
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Expired - Fee Related
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KR1020050057911A
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English (en)
Korean (ko)
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KR20060049250A (ko
Inventor
도모미츠 리사키
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세이코 인스트루 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/222—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6211—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/658—Lateral DMOS [LDMOS] FETs having trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/292—Non-planar channels of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

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  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020050057911A 2004-07-01 2005-06-30 트렌치 구조를 이용한 횡형 반도체 장치 및 그 제조 방법 Expired - Fee Related KR101152451B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00195887 2004-07-01
JP2004195887 2004-07-01
JPJP-P-2005-00144867 2005-05-18
JP2005144867A JP5110776B2 (ja) 2004-07-01 2005-05-18 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR20060049250A KR20060049250A (ko) 2006-05-18
KR101152451B1 true KR101152451B1 (ko) 2012-06-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050057911A Expired - Fee Related KR101152451B1 (ko) 2004-07-01 2005-06-30 트렌치 구조를 이용한 횡형 반도체 장치 및 그 제조 방법

Country Status (4)

Country Link
US (1) US7242058B2 (enExample)
JP (1) JP5110776B2 (enExample)
KR (1) KR101152451B1 (enExample)
TW (1) TWI380444B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060071270A1 (en) * 2004-09-29 2006-04-06 Shibib Muhammed A Metal-oxide-semiconductor device having trenched diffusion region and method of forming same
EP1892750B1 (en) * 2006-08-23 2012-11-28 Imec Method for doping a fin-based semiconductor device
JP2008053468A (ja) * 2006-08-24 2008-03-06 Seiko Instruments Inc トレンチ構造を利用した横型高駆動能力半導体装置
JP2008192985A (ja) 2007-02-07 2008-08-21 Seiko Instruments Inc 半導体装置、及び半導体装置の製造方法
US8236648B2 (en) * 2007-07-27 2012-08-07 Seiko Instruments Inc. Trench MOS transistor and method of manufacturing the same
JP5165954B2 (ja) * 2007-07-27 2013-03-21 セイコーインスツル株式会社 半導体装置
JP5314949B2 (ja) * 2007-07-27 2013-10-16 セイコーインスツル株式会社 半導体装置の製造方法
JP5159365B2 (ja) * 2008-02-26 2013-03-06 セイコーインスツル株式会社 半導体装置およびその製造方法
JP5341639B2 (ja) * 2009-06-26 2013-11-13 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
WO2012099142A1 (ja) 2011-01-18 2012-07-26 千寿製薬株式会社 保存効力を有するブロムフェナク水性液剤組成物
JP5486673B2 (ja) * 2012-12-26 2014-05-07 セイコーインスツル株式会社 半導体装置
US9997599B2 (en) 2013-10-07 2018-06-12 Purdue Research Foundation MOS-based power semiconductor device having increased current carrying area and method of fabricating same
DE102014104589B4 (de) 2014-04-01 2017-01-26 Infineon Technologies Ag Halbleitervorrichtung und integrierte Schaltung
US9601578B2 (en) * 2014-10-10 2017-03-21 Globalfoundries Inc. Non-planar vertical dual source drift metal-oxide semiconductor (VDSMOS)
JP7579673B2 (ja) * 2020-11-02 2024-11-08 日産自動車株式会社 半導体装置およびその製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4569701A (en) * 1984-04-05 1986-02-11 At&T Bell Laboratories Technique for doping from a polysilicon transfer layer
JPH02134871A (ja) * 1988-11-15 1990-05-23 Mitsubishi Electric Corp 半導体装置
JP2994670B2 (ja) * 1989-12-02 1999-12-27 忠弘 大見 半導体装置及びその製造方法
JPH04276662A (ja) * 1991-03-05 1992-10-01 Kawasaki Steel Corp 半導体装置の製造方法
JP3017838B2 (ja) * 1991-06-06 2000-03-13 株式会社東芝 半導体装置およびその製造方法
JPH05110083A (ja) * 1991-10-15 1993-04-30 Oki Electric Ind Co Ltd 電界効果トランジスタ
JP3311070B2 (ja) * 1993-03-15 2002-08-05 株式会社東芝 半導体装置
JPH06302818A (ja) * 1993-04-16 1994-10-28 Kawasaki Steel Corp 半導体装置
JPH08264764A (ja) * 1995-03-22 1996-10-11 Toshiba Corp 半導体装置
JPH0923011A (ja) * 1995-07-05 1997-01-21 Hitachi Ltd 半導体装置及びその製造方法
JP3405681B2 (ja) * 1997-07-31 2003-05-12 株式会社東芝 半導体装置
DE19908809B4 (de) * 1999-03-01 2007-02-01 Infineon Technologies Ag Verfahren zur Herstellung einer MOS-Transistorstruktur mit einstellbarer Schwellspannung
US6461918B1 (en) * 1999-12-20 2002-10-08 Fairchild Semiconductor Corporation Power MOS device with improved gate charge performance
JP2002026311A (ja) * 2000-07-04 2002-01-25 Miyazaki Oki Electric Co Ltd Ｓｏｉ型ｍｏｓ素子およびその製造方法
US6661050B2 (en) * 2002-03-20 2003-12-09 Taiwan Semiconductor Manufacturing Co., Ltd Memory cell structure with trench capacitor and method for fabrication thereof
JP3927111B2 (ja) * 2002-10-31 2007-06-06 株式会社東芝 電力用半導体装置
US6861701B2 (en) * 2003-03-05 2005-03-01 Advanced Analogic Technologies, Inc. Trench power MOSFET with planarized gate bus
JP4829473B2 (ja) * 2004-01-21 2011-12-07 オンセミコンダクター・トレーディング・リミテッド 絶縁ゲート型半導体装置およびその製造方法

Also Published As

Publication number Publication date
US7242058B2 (en) 2007-07-10
KR20060049250A (ko) 2006-05-18
TW200611409A (en) 2006-04-01
US20060001085A1 (en) 2006-01-05
JP2006049826A (ja) 2006-02-16
TWI380444B (en) 2012-12-21
JP5110776B2 (ja) 2012-12-26

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