TWI380444B - Lateral semiconductor device using trench structure and method of manufacturing the same - Google Patents

Lateral semiconductor device using trench structure and method of manufacturing the same Download PDF

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Publication number
TWI380444B
TWI380444B TW094120810A TW94120810A TWI380444B TW I380444 B TWI380444 B TW I380444B TW 094120810 A TW094120810 A TW 094120810A TW 94120810 A TW94120810 A TW 94120810A TW I380444 B TWI380444 B TW I380444B
Authority
TW
Taiwan
Prior art keywords
region
trench
semiconductor device
semiconductor
disposed
Prior art date
Application number
TW094120810A
Other languages
English (en)
Chinese (zh)
Other versions
TW200611409A (en
Original Assignee
Seiko Instr Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instr Inc filed Critical Seiko Instr Inc
Publication of TW200611409A publication Critical patent/TW200611409A/zh
Application granted granted Critical
Publication of TWI380444B publication Critical patent/TWI380444B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/62—Fin field-effect transistors [FinFET]
    • H10D30/6211—Fin field-effect transistors [FinFET] having fin-shaped semiconductor bodies integral with the bulk semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/65—Lateral DMOS [LDMOS] FETs
    • H10D30/658—Lateral DMOS [LDMOS] FETs having trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/235—Channel regions of field-effect devices of FETs of IGFETs
    • H10D62/292—Non-planar channels of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW094120810A 2004-07-01 2005-06-22 Lateral semiconductor device using trench structure and method of manufacturing the same TWI380444B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004195887 2004-07-01
JP2005144867A JP5110776B2 (ja) 2004-07-01 2005-05-18 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
TW200611409A TW200611409A (en) 2006-04-01
TWI380444B true TWI380444B (en) 2012-12-21

Family

ID=35512992

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094120810A TWI380444B (en) 2004-07-01 2005-06-22 Lateral semiconductor device using trench structure and method of manufacturing the same

Country Status (4)

Country Link
US (1) US7242058B2 (enExample)
JP (1) JP5110776B2 (enExample)
KR (1) KR101152451B1 (enExample)
TW (1) TWI380444B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060071270A1 (en) * 2004-09-29 2006-04-06 Shibib Muhammed A Metal-oxide-semiconductor device having trenched diffusion region and method of forming same
EP1892750B1 (en) * 2006-08-23 2012-11-28 Imec Method for doping a fin-based semiconductor device
JP2008053468A (ja) * 2006-08-24 2008-03-06 Seiko Instruments Inc トレンチ構造を利用した横型高駆動能力半導体装置
JP2008192985A (ja) * 2007-02-07 2008-08-21 Seiko Instruments Inc 半導体装置、及び半導体装置の製造方法
JP5165954B2 (ja) * 2007-07-27 2013-03-21 セイコーインスツル株式会社 半導体装置
JP5314949B2 (ja) * 2007-07-27 2013-10-16 セイコーインスツル株式会社 半導体装置の製造方法
US8236648B2 (en) * 2007-07-27 2012-08-07 Seiko Instruments Inc. Trench MOS transistor and method of manufacturing the same
JP5159365B2 (ja) * 2008-02-26 2013-03-06 セイコーインスツル株式会社 半導体装置およびその製造方法
JP5341639B2 (ja) 2009-06-26 2013-11-13 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
KR102075173B1 (ko) 2011-01-18 2020-02-07 센주 세이야꾸 가부시키가이샤 보존 효력을 갖는 브롬페낙 수성 액제 조성물
JP5486673B2 (ja) * 2012-12-26 2014-05-07 セイコーインスツル株式会社 半導体装置
US9997599B2 (en) * 2013-10-07 2018-06-12 Purdue Research Foundation MOS-based power semiconductor device having increased current carrying area and method of fabricating same
DE102014104589B4 (de) 2014-04-01 2017-01-26 Infineon Technologies Ag Halbleitervorrichtung und integrierte Schaltung
US9601578B2 (en) * 2014-10-10 2017-03-21 Globalfoundries Inc. Non-planar vertical dual source drift metal-oxide semiconductor (VDSMOS)
JP7579673B2 (ja) * 2020-11-02 2024-11-08 日産自動車株式会社 半導体装置およびその製造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4569701A (en) * 1984-04-05 1986-02-11 At&T Bell Laboratories Technique for doping from a polysilicon transfer layer
JPH02134871A (ja) * 1988-11-15 1990-05-23 Mitsubishi Electric Corp 半導体装置
JP2994670B2 (ja) * 1989-12-02 1999-12-27 忠弘 大見 半導体装置及びその製造方法
JPH04276662A (ja) * 1991-03-05 1992-10-01 Kawasaki Steel Corp 半導体装置の製造方法
JP3017838B2 (ja) * 1991-06-06 2000-03-13 株式会社東芝 半導体装置およびその製造方法
JPH05110083A (ja) * 1991-10-15 1993-04-30 Oki Electric Ind Co Ltd 電界効果トランジスタ
JP3311070B2 (ja) * 1993-03-15 2002-08-05 株式会社東芝 半導体装置
JPH06302818A (ja) * 1993-04-16 1994-10-28 Kawasaki Steel Corp 半導体装置
JPH08264764A (ja) * 1995-03-22 1996-10-11 Toshiba Corp 半導体装置
JPH0923011A (ja) * 1995-07-05 1997-01-21 Hitachi Ltd 半導体装置及びその製造方法
JP3405681B2 (ja) * 1997-07-31 2003-05-12 株式会社東芝 半導体装置
DE19908809B4 (de) * 1999-03-01 2007-02-01 Infineon Technologies Ag Verfahren zur Herstellung einer MOS-Transistorstruktur mit einstellbarer Schwellspannung
US6461918B1 (en) * 1999-12-20 2002-10-08 Fairchild Semiconductor Corporation Power MOS device with improved gate charge performance
JP2002026311A (ja) * 2000-07-04 2002-01-25 Miyazaki Oki Electric Co Ltd Ｓｏｉ型ｍｏｓ素子およびその製造方法
US6661050B2 (en) * 2002-03-20 2003-12-09 Taiwan Semiconductor Manufacturing Co., Ltd Memory cell structure with trench capacitor and method for fabrication thereof
JP3927111B2 (ja) * 2002-10-31 2007-06-06 株式会社東芝 電力用半導体装置
US6861701B2 (en) * 2003-03-05 2005-03-01 Advanced Analogic Technologies, Inc. Trench power MOSFET with planarized gate bus
JP4829473B2 (ja) * 2004-01-21 2011-12-07 オンセミコンダクター・トレーディング・リミテッド 絶縁ゲート型半導体装置およびその製造方法

Also Published As

Publication number Publication date
US7242058B2 (en) 2007-07-10
KR101152451B1 (ko) 2012-06-01
TW200611409A (en) 2006-04-01
JP5110776B2 (ja) 2012-12-26
US20060001085A1 (en) 2006-01-05
JP2006049826A (ja) 2006-02-16
KR20060049250A (ko) 2006-05-18

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