CN100524819C - 半导体器件及其制造方法 - Google Patents

半导体器件及其制造方法 Download PDF

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Publication number
CN100524819C
CN100524819C CN200510084297.5A CN200510084297A CN100524819C CN 100524819 C CN100524819 C CN 100524819C CN 200510084297 A CN200510084297 A CN 200510084297A CN 100524819 C CN100524819 C CN 100524819C
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CN
China
Prior art keywords
mentioned
gate electrode
insulating film
film
gate insulating
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Expired - Fee Related
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CN200510084297.5A
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English (en)
Chinese (zh)
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CN1722466A (zh
Inventor
八木下淳史
水岛一郎
佐藤力
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Toshiba Corp
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Toshiba Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6727—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having source or drain regions connected to bulk conducting substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Landscapes

  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN200510084297.5A 2002-05-13 2003-05-13 半导体器件及其制造方法 Expired - Fee Related CN100524819C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP137268/2002 2002-05-13
JP2002137268A JP2003332582A (ja) 2002-05-13 2002-05-13 半導体装置及びその製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN03131313.2A Division CN1235292C (zh) 2002-05-13 2003-05-13 半导体器件及其制造方法

Publications (2)

Publication Number Publication Date
CN1722466A CN1722466A (zh) 2006-01-18
CN100524819C true CN100524819C (zh) 2009-08-05

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CN200510084297.5A Expired - Fee Related CN100524819C (zh) 2002-05-13 2003-05-13 半导体器件及其制造方法

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Country Status (4)

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US (3) US6979846B2 (enExample)
JP (1) JP2003332582A (enExample)
CN (2) CN1235292C (enExample)
TW (1) TWI236149B (enExample)

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Also Published As

Publication number Publication date
TW200403851A (en) 2004-03-01
US20030209761A1 (en) 2003-11-13
CN1722466A (zh) 2006-01-18
TWI236149B (en) 2005-07-11
US6979846B2 (en) 2005-12-27
CN1235292C (zh) 2006-01-04
US7208353B2 (en) 2007-04-24
CN1461058A (zh) 2003-12-10
US20070176237A1 (en) 2007-08-02
JP2003332582A (ja) 2003-11-21
US20050253196A1 (en) 2005-11-17
US7537978B2 (en) 2009-05-26

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