TWI236149B - Semiconductor device and its manufacturing method - Google Patents

Semiconductor device and its manufacturing method Download PDF

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Publication number
TWI236149B
TWI236149B TW092112697A TW92112697A TWI236149B TW I236149 B TWI236149 B TW I236149B TW 092112697 A TW092112697 A TW 092112697A TW 92112697 A TW92112697 A TW 92112697A TW I236149 B TWI236149 B TW I236149B
Authority
TW
Taiwan
Prior art keywords
gate
aforementioned
film
insulating film
semiconductor device
Prior art date
Application number
TW092112697A
Other languages
English (en)
Chinese (zh)
Other versions
TW200403851A (en
Inventor
Atsushi Yagishita
Ichiro Mizushima
Tsutomu Sato
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of TW200403851A publication Critical patent/TW200403851A/zh
Application granted granted Critical
Publication of TWI236149B publication Critical patent/TWI236149B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6727—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having source or drain regions connected to bulk conducting substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Landscapes

  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW092112697A 2002-05-13 2003-05-09 Semiconductor device and its manufacturing method TWI236149B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002137268A JP2003332582A (ja) 2002-05-13 2002-05-13 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
TW200403851A TW200403851A (en) 2004-03-01
TWI236149B true TWI236149B (en) 2005-07-11

Family

ID=29397554

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092112697A TWI236149B (en) 2002-05-13 2003-05-09 Semiconductor device and its manufacturing method

Country Status (4)

Country Link
US (3) US6979846B2 (enExample)
JP (1) JP2003332582A (enExample)
CN (2) CN1235292C (enExample)
TW (1) TWI236149B (enExample)

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Also Published As

Publication number Publication date
CN100524819C (zh) 2009-08-05
US20050253196A1 (en) 2005-11-17
JP2003332582A (ja) 2003-11-21
US7208353B2 (en) 2007-04-24
CN1722466A (zh) 2006-01-18
TW200403851A (en) 2004-03-01
US20070176237A1 (en) 2007-08-02
US20030209761A1 (en) 2003-11-13
CN1235292C (zh) 2006-01-04
US6979846B2 (en) 2005-12-27
US7537978B2 (en) 2009-05-26
CN1461058A (zh) 2003-12-10

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