JP2003332582A - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法

Info

Publication number
JP2003332582A
JP2003332582A JP2002137268A JP2002137268A JP2003332582A JP 2003332582 A JP2003332582 A JP 2003332582A JP 2002137268 A JP2002137268 A JP 2002137268A JP 2002137268 A JP2002137268 A JP 2002137268A JP 2003332582 A JP2003332582 A JP 2003332582A
Authority
JP
Japan
Prior art keywords
insulating film
gate electrode
forming
film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002137268A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003332582A5 (enExample
Inventor
Junji Yagishita
淳史 八木下
Ichiro Mizushima
一郎 水島
Tsutomu Sato
力 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2002137268A priority Critical patent/JP2003332582A/ja
Priority to TW092112697A priority patent/TWI236149B/zh
Priority to CN200510084297.5A priority patent/CN100524819C/zh
Priority to CN03131313.2A priority patent/CN1235292C/zh
Priority to US10/436,181 priority patent/US6979846B2/en
Publication of JP2003332582A publication Critical patent/JP2003332582A/ja
Priority to US11/137,539 priority patent/US7208353B2/en
Publication of JP2003332582A5 publication Critical patent/JP2003332582A5/ja
Priority to US11/717,068 priority patent/US7537978B2/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6727—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having source or drain regions connected to bulk conducting substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/017—Manufacture or treatment using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

Landscapes

  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2002137268A 2002-05-13 2002-05-13 半導体装置及びその製造方法 Pending JP2003332582A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2002137268A JP2003332582A (ja) 2002-05-13 2002-05-13 半導体装置及びその製造方法
TW092112697A TWI236149B (en) 2002-05-13 2003-05-09 Semiconductor device and its manufacturing method
CN200510084297.5A CN100524819C (zh) 2002-05-13 2003-05-13 半导体器件及其制造方法
CN03131313.2A CN1235292C (zh) 2002-05-13 2003-05-13 半导体器件及其制造方法
US10/436,181 US6979846B2 (en) 2002-05-13 2003-05-13 Semiconductor device and manufacturing method thereof
US11/137,539 US7208353B2 (en) 2002-05-13 2005-05-26 Semiconductor device and manufacturing method thereof
US11/717,068 US7537978B2 (en) 2002-05-13 2007-03-13 Semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002137268A JP2003332582A (ja) 2002-05-13 2002-05-13 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
JP2003332582A true JP2003332582A (ja) 2003-11-21
JP2003332582A5 JP2003332582A5 (enExample) 2005-08-25

Family

ID=29397554

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002137268A Pending JP2003332582A (ja) 2002-05-13 2002-05-13 半導体装置及びその製造方法

Country Status (4)

Country Link
US (3) US6979846B2 (enExample)
JP (1) JP2003332582A (enExample)
CN (2) CN1235292C (enExample)
TW (1) TWI236149B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007103551A (ja) * 2005-10-03 2007-04-19 Seiko Epson Corp 半導体装置および半導体装置の製造方法
JP2012039101A (ja) * 2010-07-16 2012-02-23 Semiconductor Energy Lab Co Ltd 半導体装置
CN113053820A (zh) * 2020-03-30 2021-06-29 台湾积体电路制造股份有限公司 半导体结构和形成集成电路结构的方法

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US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US6833569B2 (en) * 2002-12-23 2004-12-21 International Business Machines Corporation Self-aligned planar double-gate process by amorphization
JP2004319853A (ja) * 2003-04-17 2004-11-11 Oki Electric Ind Co Ltd 半導体装置及びその製造方法
JP3962009B2 (ja) * 2003-12-05 2007-08-22 株式会社東芝 半導体装置の製造方法
JP2005197462A (ja) * 2004-01-07 2005-07-21 Toshiba Corp 半導体装置及びその製造方法
US7056773B2 (en) * 2004-04-28 2006-06-06 International Business Machines Corporation Backgated FinFET having different oxide thicknesses
KR100629264B1 (ko) * 2004-07-23 2006-09-29 삼성전자주식회사 게이트 관통 바디 콘택을 갖는 반도체소자 및 그 제조방법
JP4664631B2 (ja) * 2004-08-05 2011-04-06 株式会社東芝 半導体装置及びその製造方法
KR100601995B1 (ko) * 2005-03-02 2006-07-18 삼성전자주식회사 물성 변환층을 이용한 트랜지스터와 그 동작 및 제조 방법
US7102166B1 (en) 2005-04-21 2006-09-05 International Business Machines Corporation Hybrid orientation field effect transistors (FETs)
KR100695150B1 (ko) * 2005-05-12 2007-03-14 삼성전자주식회사 금속-절연체 변환 물질을 이용한 트랜지스터 및 그 제조방법
US7709313B2 (en) * 2005-07-19 2010-05-04 International Business Machines Corporation High performance capacitors in planar back gates CMOS
US7573306B2 (en) * 2006-01-31 2009-08-11 Kabushiki Kaisha Toshiba Semiconductor memory device, power supply detector and semiconductor device
JP5329024B2 (ja) * 2006-06-27 2013-10-30 国立大学法人東北大学 半導体装置
EP2050140B1 (en) * 2006-08-04 2010-05-12 Nxp B.V. Method of manufacturing a double gate transistor
JP2008177273A (ja) * 2007-01-17 2008-07-31 Toshiba Corp 半導体記憶装置及び半導体記憶装置の製造方法
US7812400B2 (en) * 2007-03-19 2010-10-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gate strip with reduced thickness
KR100861236B1 (ko) * 2007-04-10 2008-10-02 경북대학교 산학협력단 낮은 누설전류를 갖는 기둥형 전계효과트랜지스터
US9564200B2 (en) * 2007-04-10 2017-02-07 Snu R&Db Foundation Pillar-type field effect transistor having low leakage current
US8687417B2 (en) * 2007-10-05 2014-04-01 Globalfoundries Inc. Electronic device and method of biasing
GB2459667A (en) * 2008-04-29 2009-11-04 Sharp Kk Thin film transistor and active matrix display
US7863126B2 (en) * 2008-05-15 2011-01-04 International Business Machines Corporation Fabrication of a CMOS structure with a high-k dielectric layer oxidizing an aluminum layer in PFET region
JP5550444B2 (ja) 2010-05-17 2014-07-16 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5531848B2 (ja) * 2010-08-06 2014-06-25 富士通セミコンダクター株式会社 半導体装置、半導体集積回路装置、ＳＲＡＭ、Ｄｔ−ＭＯＳトランジスタの製造方法
US8716800B2 (en) * 2010-12-31 2014-05-06 Institute of Microelectronics, Chinese Academy of Sciences Semiconductor structure and method for manufacturing the same
CN102738167B (zh) * 2011-03-31 2017-02-22 中国科学院微电子研究所 半导体器件及其形成方法
CN102646592B (zh) * 2011-05-03 2014-12-03 京东方科技集团股份有限公司 薄膜场效应晶体管器件及其制备方法
US8552500B2 (en) 2011-05-24 2013-10-08 International Business Machines Corporation Structure for CMOS ETSOI with multiple threshold voltages and active well bias capability
US8415743B2 (en) 2011-05-24 2013-04-09 International Business Machines Corporation ETSOI CMOS with back gates
CN102983116B (zh) 2011-09-07 2015-09-30 中国科学院微电子研究所 半导体衬底、具有该半导体衬底的集成电路及其制造方法
CN103050525B (zh) 2011-10-12 2015-06-17 中国科学院微电子研究所 Mosfet及其制造方法
KR101990622B1 (ko) 2011-11-23 2019-06-18 아콘 테크놀로지스 인코포레이티드 계면 원자 단일층의 삽입에 의한 ⅳ족 반도체에 대한 금속 접점의 개선
JP2013115272A (ja) * 2011-11-29 2013-06-10 Toshiba Corp 半導体装置とその製造方法
US9299802B2 (en) * 2012-10-28 2016-03-29 International Business Machines Corporation Method to improve reliability of high-K metal gate stacks
US8796751B2 (en) 2012-11-20 2014-08-05 Micron Technology, Inc. Transistors, memory cells and semiconductor constructions
CN103151293B (zh) * 2013-02-25 2016-04-13 上海华虹宏力半导体制造有限公司 射频传输结构的形成方法
US20150129967A1 (en) * 2013-11-12 2015-05-14 Stmicroelectronics International N.V. Dual gate fd-soi transistor
US9800204B2 (en) * 2014-03-19 2017-10-24 Stmicroelectronics International N.V. Integrated circuit capacitor including dual gate silicon-on-insulator transistor
CN104752429B (zh) * 2015-04-17 2017-10-27 上海华虹宏力半导体制造有限公司 绝缘体上硅射频开关器件结构
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CN107527800B (zh) * 2016-06-22 2021-05-11 无锡华润上华科技有限公司 沟槽栅极结构及其制造方法
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007103551A (ja) * 2005-10-03 2007-04-19 Seiko Epson Corp 半導体装置および半導体装置の製造方法
JP2012039101A (ja) * 2010-07-16 2012-02-23 Semiconductor Energy Lab Co Ltd 半導体装置
CN113053820A (zh) * 2020-03-30 2021-06-29 台湾积体电路制造股份有限公司 半导体结构和形成集成电路结构的方法
US12484298B2 (en) 2020-03-30 2025-11-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor structure with self-aligned backside power rail

Also Published As

Publication number Publication date
TW200403851A (en) 2004-03-01
US20030209761A1 (en) 2003-11-13
CN1722466A (zh) 2006-01-18
TWI236149B (en) 2005-07-11
US6979846B2 (en) 2005-12-27
CN1235292C (zh) 2006-01-04
US7208353B2 (en) 2007-04-24
CN1461058A (zh) 2003-12-10
US20070176237A1 (en) 2007-08-02
CN100524819C (zh) 2009-08-05
US20050253196A1 (en) 2005-11-17
US7537978B2 (en) 2009-05-26

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